953results about How to "Increase the doping concentration" patented technology

A first doped layer of a conductivity type opposite to that of source / drain regions is formed in a semiconductor substrate under a gate electrode. A second doped layer of the conductivity type opposite to that of the source / drain regions is formed in the semiconductor substrate below the first doped layer. The first doped layer has a first peak in dopant concentration distribution in the depth direction. The first peak is located at a position shallower than the junction depth of the source / drain regions. The second doped layer has a second peak in dopant concentration distribution in the depth direction. The second peak is located at a position deeper than the first peak and shallower than the junction depth of the source / drain regions. The dopant concentration at the first peak is higher than that at the second peak.

A method is for making a spintronic device and may include forming at least one superlattice and at least one electrical contact coupled thereto, with the at least one superlattice including a plurality of groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion having a crystal lattice, at least one non-semiconductor monolayer constrained within the crystal lattice of adjacent base semiconductor portions, and a spintronic dopant. The spintronic dopant may be constrained within the crystal lattice of the base semiconductor portion by the at least one non-semiconductor monolayer. In some embodiments, the repeating structure of a superlattice may not be needed.

A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.

The present invention discloses a transversal bilateral diffusion MOS transistor with high pressure resistant, which belongs to micro-electronics semi-conductor device field. The device includes a gate region, a source area, a drain region, a tagma, a gate medium and a drift region, the setting drift region is placed between the tagma and the drain region, and the doping type is opposite to the tagma, an insulating medium region and a doping region which is opposite to the doping type of the drift region are equipped in the drift region, and the doping concentration of the doping region is higher than that of the drift region, the doping region is adjacent to the tagma, however the insulating medium region is adjacent to the drain region. Because the insulating medium region and the doping region are inducted into the drift region at the same time, the effective depth of the drift region is reduced effectively to make the electric field more uniform and increase the equivalent length of the drift region, the resistant high Voltage characteristic of the transversal bilateral diffusion MOS transistor device of the present invention is good.

The invention discloses a polarization beam-combination device for a pulsed laser. The polarization beam-combination device comprises the pulsed laser, an input beam splitter, n laser amplifiers and n-1 polarization coherent beam-combination units. The pulsed laser outputs a beam of seed light. The input beam splitter divides the seed light into n sub-seed light beams. The n laser amplifiers respectively carry out power amplification to the n sub-seed light beams. The n-1 polarization coherent beam-combination units carry out pairwise polarization in-phase beam-combination for n-1 times to n laser beams output by the n laser amplifiers. N is a natural number which is bigger than or equal to two. An output end of the polarization beam-combination device is connected with an output beam splitter. A hard light output end of the output beam splitter is used as an output end of the polarization coherent beam-combination units. Light output from a low light output end of the output beam splitter shoots into a relative phase detection module of a drive phase control module, and the relative phase detection module enables phase positions of two laser beams to be consistent. Through adoption of a polarization detection method, the polarization beam-combination device detects the relative phase positions of the two laser beams, and is capable of achieving coaxial combination of a plurality of coherent light beams, high in combined efficiency and good in beam quality.

A process for preparing the prefabricated RE-doped optical-fibre rod features that the chemical gas-phase deposition of plasma is used to deposit the doped SiO2 layer on the inner surface of liner quartz tube and the evaporator is used to directly deliver the RE compound and other codoping agent into reaction tube for direct deposition without pollution.

The present invention facilitates semiconductor device fabrication by providing mechanisms for utilizing different isolation schemes within embedded memory and other logic portions of a device. The isolation mechanism of the embedded memory portion is improved relative to other portions of the device by increasing dopant concentrations or reducing the depth of the dopant profiles within well regions of the embedded memory array. As a result, smaller isolation spacing can be employed thereby permitting a more compact array. The isolation mechanism of the logic portion is relatively less than that of the embedded memory portion, which permits greater operational speed for the logic.

A light-emitting device, such as a light-emitting diode (LED), has a group III-nitride current spreading layer which is either doped with transition metal, or comprises alternating transition metal nitride layer and group III-nitride layer. Also provided is a light-emitting device, such as a light-emitting diode (LED), having a quantum well doped with transition metal. Also provided is a method of forming transition-metal containing AlInGaN electrical conductive material.

The invention relates to a semiconductor device. The device comprises a semiconductor substrate, a semiconductor drift region on the semiconductor substrate, a high-K dielectric on the semiconductor substrate, an active region on the semiconductor drift region and a trench gate structure on the high-K dielectric, wherein the semiconductor drift region comprises a first conduction type semiconductor region and a second conduction type semiconductor region which form a super-junction structure; the high-K dielectric is adjacent to the second conduction type semiconductor region; the trench gate structure is adjacent to the active region; and the second conduction type semiconductor region is formed through ion implantation at a small inclination angle, so that the semiconductor device is narrow and has high concentration.

The present invention facilitates semiconductor device fabrication by providing mechanisms for utilizing different isolation schemes within embedded memory and other logic portions of a device. The isolation mechanism of the embedded memory portion is improved relative to other portions of the device by increasing dopant concentrations or reducing the depth of the dopant profiles within well regions of the embedded memory array. As a result, smaller isolation spacing can be employed thereby permitting a more compact array. The isolation mechanism of the logic portion is relatively less than that of the embedded memory portion, which permits greater operational speed for the logic.

In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.

Embodiments of the present disclosure generally relate to doping and annealing substrates. The substrates may be doped during a hot implantation process, and subsequently annealed using a nanosecond annealing process. The combination of hot implantation and nanosecond annealing reduces lattice damage of the substrates and facilitates a higher dopant concentration near the surface of the substrate to facilitate increased electrical contact with the substrate. An optional capping layer may be placed over the substrate to reduce outgassing of dopants or to control dopant implant depth.

A protective SCR integrated circuit device is disclosed built on adjacent N and P wells and defining an anode and a cathode. In addition to the anode and cathode contact structures, the device has an n-type stack (N+ / ESD) structure bridging the N-Well and the P-Well, and a p-type stack (P+ / PLDD) structure in the P-Well. The separation of the n-type stack structure and the p-type stack structure provides a low triggering voltage without involving any external circuitry or terminal, that together with other physical dimensions and processing parameters also provide a relatively high holding voltage without sacrificing the ESD protection robustness. In an embodiment, the triggering voltage may be about 8V while exhibiting a holding voltage, that may be controlled by the lateral dimension of the n-type stack of about 5-7 V.