High pressure resistant lateral direction bilateral diffusion MOS transistor

Abstract

The present invention discloses a transversal bilateral diffusion MOS transistor with high pressure resistant, which belongs to micro-electronics semi-conductor device field. The device includes a gate region, a source area, a drain region, a tagma, a gate medium and a drift region, the setting drift region is placed between the tagma and the drain region, and the doping type is opposite to the tagma, an insulating medium region and a doping region which is opposite to the doping type of the drift region are equipped in the drift region, and the doping concentration of the doping region is higher than that of the drift region, the doping region is adjacent to the tagma, however the insulating medium region is adjacent to the drain region. Because the insulating medium region and the doping region are inducted into the drift region at the same time, the effective depth of the drift region is reduced effectively to make the electric field more uniform and increase the equivalent length of the drift region, the resistant high Voltage characteristic of the transversal bilateral diffusion MOS transistor device of the present invention is good.

Description

technical field [0001] The invention relates to a lateral double-diffusion MOS transistor in the field of microelectronic semiconductor devices, in particular to a lateral double-diffusion MOS transistor suitable for a high-voltage circuit or a radio frequency power amplifier circuit. Background technique [0002] A lateral double-diffused MOS transistor (lateral double-diffused MOS transistor, LDMOS) is a lightly doped drain MOS device. Compared with ordinary MOS devices, LDMOS has a longer lightly doped region at the drain end, called the drift region, usually the doping concentration of this part of the structure is 10 16 cm -3 order of magnitude. The LDMOS structure bears a higher voltage drop through the drift region. Because LDMOS technology is simple, reliable, mature, and has good RF performance, and because the manufacturing process of LDMOS transistors is fully compatible with existing standard CMOS processes, it is easy to achieve large-scale integration with l...

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Problems solved by technology

Usually, the core devices of this part of the circuit need to use special materials, the process is complicated, the cost is expensive, and it is not conducive to the integration with other circuits

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