8results about How to "Reduce doping concentration" patented technology

The invention discloses a light-emitting device and a preparation method thereof and a display device, a light-emitting layer comprises a host material, a sensitizer and a fluorescent object material, the ratio of the doping concentration of the sensitizer to the doping concentration of the fluorescent object material is high, and the light-emitting device aims at solving the problems that an existing light-emitting device is low in efficiency and short in service life. The invention further discloses a preparation method of the light-emitting device, the light-emitting layer is formed on the surface of the first electrode through linear source vacuum evaporation, the host material, the sensitizer and the fluorescent object material are placed in the corresponding evaporation sources respectively, the evaporation sources of the fluorescent object material are scanned preferentially, the evaporation rates of the three evaporation sources are adjusted, and the light-emitting device is obtained. The doping concentration of the sensitizer and the fluorescent guest material is gradually increased or decreased along with the increase of the thickness of the light-emitting layer; and evaporating a second electrode on the surface of the light-emitting layer.

The embodiment of the present application provides a diode device, which comprises: a first semiconductor layer of a first doping type; a field termination layer of the first doping type formed on the first semiconductor layer; a field transition layer of the first doping type formed on the field termination layer; a drift region of the first doping type formed on the field transition layer, and a plurality of column regions of a second doping type formed in the drift region and arranged at intervals; a second semiconductor layer of the second doping type formed above the drift region; the doping concentration of the field transition layer is less than the doping concentration of the field termination layer, the drift region and the field transition layer can respectively cause a conductive modulation effect to accumulate minority carriers; when the diode device is turned off, the field transition layer is completely depleted, the electric field is reduced in the field transition layer and reduced to 0 in the field termination layer. The embodiment of the present application solves the technical problem that the traditional SJ-diode device has large turn-off energy loss caused by tail current in the turn-off process.

The invention discloses a trench Schottky barrier diode and a manufacturing method, a trench of the diode located in an epitaxial layer is in a step shape formed by a small upper cylindrical opening and a large lower cylindrical opening, conductive polycrystalline silicon is arranged in the trench, a dielectric layer isolates the conductive polycrystalline silicon from the epitaxial layer on the inner wall of the trench, and the dielectric layer is connected with the trench. The thickness of the dielectric layer on the inner wall of the upper cylindrical opening is smaller than that of the dielectric layer on the inner wall of the lower cylindrical opening. According to the trench and the upper cylindrical small opening, the conductive area during forward conduction is increased, and forward conduction voltage drop is reduced; the lower cylindrical opening is large, so that the point discharge effect during reverse bias of the device is avoided; furthermore, the dielectric layer covered on the inner wall of the lower cylindrical opening of the groove is thicker, and the pressure drop borne by the dielectric layer is increased during reverse bias; and the thin dielectric layer on the side wall of the upper cylindrical opening is beneficial to forming depletion pinch-off in the mesa structure epitaxial layer during reverse bias, so that the reverse blocking performance of the device is further improved, the reliability of the device is improved, and the service life of the device is prolonged.

The invention discloses a step-shaped groove Schottky barrier diode and a manufacturing method, the diode comprises a cathode metal layer, a substrate, an epitaxial layer, a functional metal layer and an anode metal layer from bottom to top, a step-shaped groove is distributed in the epitaxial layer, the groove is composed of an upper cylindrical opening and a lower cylindrical opening, the upper cylindrical opening is small, the lower cylindrical opening is large, and the functional metal layer is a metal layer. Conductive polycrystalline silicon is arranged in the groove, the dielectric layer isolates the conductive polycrystalline silicon from the epitaxial layer, the Schottky barrier region and the anode electrode region, and the epitaxial layer at the bottom of the groove further comprises an ion implantation region. According to the trench and the upper cylindrical small opening, the conductive area during forward conduction is increased, the forward conduction current density is reduced, the forward conduction voltage drop is reduced, and the forward conduction performance is improved; the lower cylindrical opening is large, so that the point discharge effect during reverse bias of the device is avoided, the reverse blocking performance of the device is improved, and the reliability and the service life of the device are improved.

The invention provides a super junction semiconductor device and a manufacturing method thereof. The super junction semiconductor device comprises a first conductive type substrate and a first conductive type epitaxial layer; a first groove is formed in the first conductive type epitaxial layer; a second conductive type epitaxial layer is arranged on the inner wall of the first groove; a first dielectric layer is arranged in the first groove; a part of the second conductive type epitaxial layer on the same side of the top of each first groove is removed to form a second groove; forming a gate trench at the upper part in the second trench; a section of first dielectric layer is reserved below the gate trench; a gate oxide layer is arranged on the side wall of the gate trench; grid polycrystalline silicon is arranged in the grid groove; second conductive type well regions are arranged at the tops of the first conductive type epitaxial layers on the two sides of the first groove; a heavily doped first conductive type injection region is formed at the top in the second conductive type well region, close to the same side of the gate trench, of each first trench; the device provided by the invention can bear higher withstand voltage, and the working frequency is improved.

The invention provides a light emitting diode chip and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode chip comprises an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are stacked in sequence; the P-type semiconductor layer comprises a non-doped sub-layer and a doped sub-layer which are stacked together, the doped sub-layer comprises a first high-temperature phase layer, a second high-temperature phase layer and a third high-temperature phase layer which are stacked in sequence, and precursor materials of the non-doped sub-layer and the doped sub-layer are TEGa. According to the invention, the crystallization quality can be ensured, and the high doping concentration can also be ensured.

The application discloses a preparation method of a buried heterojunction for a distributed feedback laser, which can reduce the threshold current of a laser, greatly improve the consistency of a device and has strong process compatibility. The method introduces a selective Zn diffusion treatment process step after growing a buried layer on a top cladding layer. A high-concentration p-type region formed through the diffusion step can form a more ideal ohmic contact with a metal electrode. In addition, an extra thin gold layer with a thickness of 5-10 nm is evaporated on the top cladding layer, which can significantly reduce the ohmic contact. The ohmic contact is reduced from 1.2e ‑5 to 4.5e ‑7 , about 26.6 times. In addition, while reducing the ohmic contact, the current limiting effect is significantly enhanced. The threshold current of the laser prepared by the method can be reduced to 15-18 mA. In addition, the method has low process difficulty, high operability, high freedom and greatly improved device consistency. Moreover, the method has strong process compatibility. The method is suitable for popularization and application in the field of semiconductor lasers.

This application relates to the photovoltaic field, providing a solar cell and a photovoltaic module. The solar cell includes: a substrate, the surface of which has a first region and a second region arranged at intervals, at least one of the first regions comprising a first part and a second part; a doped layer located within the substrate adjacent to the surface of the first part, the doping concentration of the doped layer being greater than the doping concentration of the substrate; a conductive layer located on the surface of the first region; a passivation layer located on the surfaces of the conductive layer and the second region; and a plurality of electrodes arranged at intervals along a first direction, the electrodes extending along a second direction, each electrode facing the second part, the electrodes being disposed on the side of the conductive layer away from the substrate and electrically connected to the conductive layer. The solar cell and photovoltaic module provided by this application can at least improve the photoelectric conversion efficiency.