5results about How to "Reduce doping concentration" patented technology

The embodiment of the present application provides a diode device, which comprises: a first semiconductor layer of a first doping type; a field termination layer of the first doping type formed on the first semiconductor layer; a field transition layer of the first doping type formed on the field termination layer; a drift region of the first doping type formed on the field transition layer, and a plurality of column regions of a second doping type formed in the drift region and arranged at intervals; a second semiconductor layer of the second doping type formed above the drift region; the doping concentration of the field transition layer is less than the doping concentration of the field termination layer, the drift region and the field transition layer can respectively cause a conductive modulation effect to accumulate minority carriers; when the diode device is turned off, the field transition layer is completely depleted, the electric field is reduced in the field transition layer and reduced to 0 in the field termination layer. The embodiment of the present application solves the technical problem that the traditional SJ-diode device has large turn-off energy loss caused by tail current in the turn-off process.

The invention provides a super junction semiconductor device and a manufacturing method thereof. The super junction semiconductor device comprises a first conductive type substrate and a first conductive type epitaxial layer; a first groove is formed in the first conductive type epitaxial layer; a second conductive type epitaxial layer is arranged on the inner wall of the first groove; a first dielectric layer is arranged in the first groove; a part of the second conductive type epitaxial layer on the same side of the top of each first groove is removed to form a second groove; forming a gate trench at the upper part in the second trench; a section of first dielectric layer is reserved below the gate trench; a gate oxide layer is arranged on the side wall of the gate trench; grid polycrystalline silicon is arranged in the grid groove; second conductive type well regions are arranged at the tops of the first conductive type epitaxial layers on the two sides of the first groove; a heavily doped first conductive type injection region is formed at the top in the second conductive type well region, close to the same side of the gate trench, of each first trench; the device provided by the invention can bear higher withstand voltage, and the working frequency is improved.

The invention provides a light emitting diode chip and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode chip comprises an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are stacked in sequence; the P-type semiconductor layer comprises a non-doped sub-layer and a doped sub-layer which are stacked together, the doped sub-layer comprises a first high-temperature phase layer, a second high-temperature phase layer and a third high-temperature phase layer which are stacked in sequence, and precursor materials of the non-doped sub-layer and the doped sub-layer are TEGa. According to the invention, the crystallization quality can be ensured, and the high doping concentration can also be ensured.

The application discloses a preparation method of a buried heterojunction for a distributed feedback laser, which can reduce the threshold current of a laser, greatly improve the consistency of a device and has strong process compatibility. The method introduces a selective Zn diffusion treatment process step after growing a buried layer on a top cladding layer. A high-concentration p-type region formed through the diffusion step can form a more ideal ohmic contact with a metal electrode. In addition, an extra thin gold layer with a thickness of 5-10 nm is evaporated on the top cladding layer, which can significantly reduce the ohmic contact. The ohmic contact is reduced from 1.2e ‑5 to 4.5e ‑7 , about 26.6 times. In addition, while reducing the ohmic contact, the current limiting effect is significantly enhanced. The threshold current of the laser prepared by the method can be reduced to 15-18 mA. In addition, the method has low process difficulty, high operability, high freedom and greatly improved device consistency. Moreover, the method has strong process compatibility. The method is suitable for popularization and application in the field of semiconductor lasers.

This application relates to the photovoltaic field, providing a solar cell and a photovoltaic module. The solar cell includes: a substrate, the surface of which has a first region and a second region arranged at intervals, at least one of the first regions comprising a first part and a second part; a doped layer located within the substrate adjacent to the surface of the first part, the doping concentration of the doped layer being greater than the doping concentration of the substrate; a conductive layer located on the surface of the first region; a passivation layer located on the surfaces of the conductive layer and the second region; and a plurality of electrodes arranged at intervals along a first direction, the electrodes extending along a second direction, each electrode facing the second part, the electrodes being disposed on the side of the conductive layer away from the substrate and electrically connected to the conductive layer. The solar cell and photovoltaic module provided by this application can at least improve the photoelectric conversion efficiency.