157 results about "Photo conversion" patented technology

The invention, in various exemplary embodiments, incorporates multiple image sensor arrays, with separate respective color filters, on the same imager die. One exemplary embodiment is an image sensor comprising a plurality of arrays of pixel cells at a surface of a substrate, wherein each pixel cell comprises a photo-conversion device. The arrays are configured to commonly capture an image. An image processor circuit is connected to said plurality of arrays and configured to combine the captured images, captured by the plurality of arrays, and output a color image.

Embodiments of the present invention provide pixel cells with increased storage capacity, which are capable of anti-blooming operations. In an exemplary embodiment a pixel cell has an electronic shutter that transfers charge generated by a photo-conversion device to a storage node before further transferring the charge to the pixel cell's floating diffusion node. Each pixel cell also includes an anti-blooming transistor for directing excess charge out of each respective pixel cell, thus preventing blooming. Additionally, two or more pixel cells of an array may share a floating diffusion node and reset and readout circuitry.

A pixel circuit, and method of forming a pixel circuit, an imager device, and a processing system include a photo-conversion device, a floating diffusion region for receiving and storing charge from the photo-conversion device, and a transparent transistor for use in operation of the pixel, wherein the transparent transistor is at least partially over the photo-conversion device, such that the photo-conversion device receives light passing through the transparent transistor.

An image sensor having improved sensitivity and method for making same include a substrate having an active pixel region with a peripheral circuit region surrounding the active pixel region; a plurality of photo conversion elements disposed in the active pixel region, each photodiode is configured for receiving light through a lens and an opening formed between a plurality of layers of interlayer dielectrics formed on top of each other above the substrate; and a plurality of interconnections electrically connecting to the photo conversion elements disposed within the active pixel region, wherein the distance between the lens and the photo conversion elements is shorter than the distance between the substrate and the top interlayer dielectric in the peripheral circuit region.

There is provided a high power laser system for powering a remotely located laser device, such as an ROV, using a high power laser fiber optic tether and a photo-conversion device, such as a laser photovoltaic assembly. Laser device systems, such as ROV systems that utilizes a high power laser cutting and/or cleaning tools are also provided.

A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. The charge storage region is adjacent to a gate of a transistor. The transistor gate is adjacent to the photo-conversion device and, in conjunction with the control gate, transfers photo-generated charge from the photo-conversion device to the charge storage region.

An anti-resonant reflecting optical waveguide structure for reducing optical crosstalk in an image sensor and method of forming the same. The method includes forming a trench within a plurality of material layers and over a photo-conversion device. The trench is vertically aligned with the photo-conversion device and is filled with materials of varying refractive indices to form an anti-resonant reflecting optical waveguide structure. The anti-resonant reflecting optical waveguide structure has a core and at least two cladding structures. The cladding structure in contact with the core has a refractive index that is higher than the refractive index of the core and the refractive index of the other cladding structure. The cladding structures act as Fabry-Perot cavities for light propagating in the transverse direction, such that light entering the anti-resonant reflecting optical waveguide structure remains confined to the core. This reduces the chance of photons impinging upon neighboring photo-conversion devices.

The invention discloses a method for achieving insurance claim anti-fraud based on consistency of multiple pictures.The method comprises the steps of dividing damage assessment pictures of the same position of a vehicle into the same set; obtaining key point features of all sets, grouping the assessment pictures of all the picture sets, and matching multiple related key points with the assessment pictures in each group; according to the related key points of each group, calculating a feature point transformation matrix of each group, and converting one of pictures in each group into a to-be-verified picture having the same shooting angle as another picture in the group through the corresponding feature point transformation matrix; conducting feature parameter matching on each to-be-verified picture and another picture in the corresponding group; when feature parameters are not matched, generating reminding information so as to remind that fraud practice exists in the received picture.The invention further provides a server applicable to the method.By means of the method and server for achieving insurance claim anti-fraud based on consistency of the multiple pictures, fraud insurance claim practice can be identified automatically.

A pixel cell with a photo-conversion device and at least one structure includes a deuterated material adjacent the photo-conversion device.

Embodiments of the invention provide pixel cells that allow both automatic light control and correlated double sampling operations. The pixel cell includes first and second photo-conversion devices that can be separately read out. For example, the second photo-conversion device can be the pixel cells' floating diffusion region, with an area and doping profile suitable for photo-conversion. An image sensor may include an array of pixel cells, some or all of which have two photo-conversion devices, and peripheral circuitry for reading out signals from the pixel cells. The image sensor's readout circuitry may monitor charge generated by the second photo-conversion devices to determine when to read out signals from the first photo-conversion devices.

The invention relates to a wide band gap semiconductor nanotube/line array film characterized by high conversion efficiency and quantum dot sensitization, and a preparation method thereof as well as a photo-electrode adopting the wide band gap semiconductor nanotube/line array film. The wide band gap semiconductor nanotube/line array film provided by the invention comprises a wide band gap semiconductor nanotube/line array and a conductive substrate, and the wide band gap semiconductor nanotube/line array is filled with narrow band gap semiconductor quantum dot nano-particles. According to the preparation method provided by the invention, the anodic oxidation method is used for preparing the wide band gap semiconductor nanotube/line array film, and the chemical deposition method is used for preparing a narrow band semiconductor nanotube/line array film with sensitized quantum dots. The photo-electrode adopting the wide band gap semiconductor nanotube/line array film can be applied to a photo-chemical bath, and the photo conversion efficiency of the photo-chemical bath can be substantially improved. The invention can be widely applied to the technical field of photo-electricity conversion of solar power.

The invention discloses a manufacturing method of a full-color Micro-LED display device based on a quantum dot photo-conversion layer, and relates to the technical field of preparation of displays. The following problems are solved: existing quantum dot materials are directly coated with the surface of Micro-LED, and after a coating process is completely carried out, the quantum dot materials arranged above adjacent pixel units can be horizontally diffused in a low-temperature heat annealing process, and serious optical crosstalk interference can be caused by mixing the different quantum dot materials. Light source arrays are tightly adhered with quantum dot film layers so that difficult separation between the light source arrays and the quantum dot film layers is achieved; a photo-conversion layer base plate is prepared by coating quantum dot material subareas of different colors with different positions of glass or polymer base plates; a monochromatic Micro-LED display array is adhered with the photo-conversion base plate, so that full-color display of the Micro-LED is realized. A DBR reflective mirror is prepared at the bottom of a groove so as to inhibit emission of the monochromatic Micro-LED display array, so that a light source utilization ratio is increased. The full-color Micro-LED display device prepared by adopting the method has the advantages of less optical crosstalk interference of the adjacent pixels, high utilization ratio of excitation light sources and high display quality.

The present invention relates to a method of transforming images, in particular photographs, into stereoscopic images, and also to images, and visual or audiovisual programs including sequences of images obtained by said method, and in particular to motion pictures and video games. The invention is achieved by:separating an image background into complementary color components, that are advantageously red, blue, and green;displacing at least one of the color components relative to the others, advantageously by shifting two color components through small amplitudes in opposite directions with the third color component, typically green, remaining stationary, or by rotating two color components in opposite directions through small amplitudes, with the third color component remaining stationary; andsuperposing an image that forms a foreground for the image.

An image sensor and a method of forming an image sensor. The image sensor includes an array of pixel cells at a surface of a substrate. Each pixel cell has a photo-conversion device. At least one a micro-electro-mechanical system (MEMS) element including a photonic crystal structure is provided over at least one of the pixel cells. The MEMS-based photonic crystal element is supported by a support structure and configured to selectively permit electromagnetic wavelengths to reach the photo-conversion device upon application of a voltage. As such, the MEMS-based photonic crystal element of the invention can replace or compliment conventional filters, e.g., color filter arrays.

Provided is a backside-illuminated solid-state image pickup device capable of allowing peripheral circuits to produce stable waveforms and thereby achieving image characteristics with less noise, the device including: a first-conductivity-type semiconductor layer having a first principal surface and a second principal surface opposed to the first principal surface and also having a pixel area and an analog circuit area; a first P type area formed to lie between the second principal surface and the first principal surface in the analog circuit area; a metal layer formed at least partially on the second principal surface of the first P type area; a VSS electrode electrically connected to the metal layer; a photo-conversion area formed in the pixel area and used to accumulate electric charges generated by photoelectric conversion; and a microlens provided on the second principal surface in the pixel area so as to correspond to the photo-conversion area.

A CMOS pixel cell having a charge transfer transistor adjacent the photo-conversion device. The transistor has a channel region surrounded by a gate and an upper source/drain region over the channel region.

A device and method for providing an optical guide of a pixel to guide incoming light to/from a photo-conversion device of the pixel to improve the optical crosstalk immunity. The optical guide includes an optically reflecting barrier formed as a trench filled with a material which produces reflection. The trench fill material may have an index of refraction that is less than the index of refraction of the material used for the trench surrounding layers to provide a light reflective structure or the trench fill material may provide a reflection surface.

A pixel cell including a substrate of a first conductivity type over an epitaxial layer of a second conductivity type. The epitaxial layer has a dopant gradient, wherein the dopant concentration decreases from a surface of the epitaxial layer adjacent the substrate to the surface of the epitaxial layer opposite the substrate. A photo-conversion device is at a surface of the epitaxial layer.