The invention relates to the technical field of
semiconductor probe performance testing, in particular to a probe performance testing method, which comprises the following steps of: calculating resistance consistency and a
signal transmission fidelity ratio of a probe interference working condition through a contact
simulation test and a
signal transmission
simulation test, and performing single-probe
simulation verification; for double probes formed by qualified single probes, calculating
contact pressure interference variables and electromagnetic
crosstalk interference variables, and carrying out cooperative interference judgment; extracting historical probe false data, and constructing an interference false
risk model and a non-interference false
risk model; grouping the double probes according to interference degrees, and substituting the grouped double probes into corresponding models to calculate
risk assessment values; determining an adjustment direction and an adjustment scheme for the high-risk group, and calculating the average attenuation rate of the double probes after adjustment; and after the attenuation rate is verified to reach the standard, the probe group is determined as a qualified performance
test probe group, so that the accuracy, the stability and the anti-interference capability of
semiconductor probe performance detection are effectively improved.