66results about How to "Improve charge transfer efficiency" patented technology

Provided is a CMOS image sensor including a pinned photodiode and a transfer transistor. The CMOS image sensor includes: a substrate; a gate electrode disposed on the substrate and electrically isolated from the substrate by a gate insulating layer; a first floating region disposed in the substrate of one side of the gate electrode; a first impurity region for a photodiode disposed in the substrate of the other side of the gate electrode; a second floating region disposed in the substrate between the first impurity region for the photodiode and the gate electrode; and a second impurity region for the photodiode disposed in a surface portion of the substrate including the first impurity region for the photodiode and the second floating region.

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. The charge storage region is adjacent to a gate of a transistor. The transistor gate is adjacent to the photo-conversion device and, in conjunction with the control gate, transfers photo-generated charge from the photo-conversion device to the charge storage region.

Disclosed is an imaging device including a photodiode and floating diffusion region formed to be spaced from each other on a surface layer of a pixel region of a silicon (semiconductor) substrate, and a transfer gate having one of a concave and convex portions toward the floating diffusion region, the transfer gate being formed above the silicon substrate between the photodiode and the floating diffusion region by interposing a gate insulating film therebetween.

A solid-state imaging device includes multiple pixels formed of photoelectric converters and pixel transistors; a floating diffusion portion that exists within a region of each of the photoelectric converters when viewed from above; and a vertical transfer gate electrode of a transfer transistor that surrounds at least a portion of each photoelectric converter and is formed in the depth direction of a substrate and makes up the pixel transistor.

A system for balancing charge within a battery pack with a plurality of cells connected in series, including a capacitor; a processor configured to select a combination of donor cells and receiver cells from the plurality of cells in one of the following two modes: (1) a first mode where the number of donor cells is equal to the number of receiver cells, and (2) a second mode where the number of donor cells is greater than the number of receiver cells; and a plurality of switches that electrically connect the capacitor to the donor cells to charge the capacitor, and that electrically connected the capacitor to the receiver cells to discharge the capacitor. The transfer of charge between cells in the plurality of cells through the capacitor balances the charge within the battery pack.

The invention discloses a self-adapting manual-automatic integrated power-driven balance vehicle. The self-adapting manual-automatic integrated power-driven balance vehicle comprises a machine shell, motor wheels, a pedal plate and a control system; and the control system comprises a control unit, a driving circuit, a motor, a smoothing voltage stabilizing circuit, a power generating unit and a power battery. The control unit analyzes the vehicle state according to a signal of a vehicle sensor, and either the state of the vehicle is switched into a driving mode or a braking mode is judged according to exterior output. The self-adapting manual-automatic integrated power-driven balance vehicle has an intelligent driving mode and an automatic tracking mode, and therefore the using requirements of different users are met. In addition, the first-time demarcation function is set, parameter calibration on the driver weight and systematically-calculated vehicle reactions obtained by the control unit through the adoption of the algorithm of the control unit, a new reaction value is formulated, the same accelerated speed and the same decelerated speed are achieved by different persons under the same gradient, and the driving consistency and the driving safety are accordingly guaranteed.

The invention relates to a friction nanometer power generator for converting mechanical energy to electric energy and a fabrication method of the friction nanometer power generator. The fabrication method comprises the steps of packaging a flexible substrate layer I, an electrode material layer I, an electrical negative friction layer, an electrical positive friction layer, an electrode material layer II and a flexible substrate layer II according to a sequence, and then connecting the two flexible substrate layer at the outmost layer so that the electrical negative friction layer and the electrical positive friction layer are arranged at intervals to fabricate the friction nanometer power generator, wherein the electrical negative friction layer is fabricated by automatically assembly a friction electrical negative substance on a surface of aerogel. The fabricated friction nanometer power generator for converting the mechanical energy to the electric energy comprises the electrical negative friction layer and the electrical positive friction layer, and the electrical negative frication layer mainly comprises nanometer fiber of the self-assembled friction electrical negative substance. The fabrication method is simple, the fabricated product is low in cost, the sensitivity on mechanical energy of tiny biology is high, the electrical output performance is excellent, and the frication nanometer power generator has favorable application prospect in the field of self power supply sensing and wearability.

A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.

A pixel of an image sensor includes a gate insulation layer formed over a substrate doped with first-type impurities, a transfer gate formed over the gate insulation layer, a photodiode formed in the substrate at one side of the transfer gate, and a floating diffusion node formed in the substrate at the other side of the transfer gate, wherein the transfer gate has a negative bias during a charge integration cycle.

An image sensor includes: a gate structure on a semiconductor layer of a first conductive type; a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a predetermined depth from a surface portion of the semiconductor layer; spacers formed on sidewalls of the gate structure; and a second impurity region of a second conductive type formed in a portion of the semiconductor layer under the first impurity region, wherein the first impurity region includes: a first region of which portion aligned with the one side of the gate structure; a second region aligned with the one of the spacers and having a concentration higher than that of the first region; and a third region apart from the one side of the gate structure with a predetermined distance and having a concentration higher than that of the second region.

Disclosed is an imaging device including a photodiode and floating diffusion region formed to be spaced from each other on a surface layer of a pixel region of a silicon (semiconductor) substrate, and a transfer gate having one of a concave and convex portions toward the floating diffusion region, the transfer gate being formed above the silicon substrate between the photodiode and the floating diffusion region by interposing a gate insulating film therebetween.

The present invention relates to a method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor. Prior to forming an N-type ion implantation region and a first and a second P0-type ion implantation regions, an oxide layer and a nitride layer are sequentially formed on a substrate and are subsequently patterned to form a protective pattern structure with a specific arrangement with respect to a photodiode and a gate structure of a transfer transistor. Afterwards, the gate structure is formed on the substrate. In the existence of the protective pattern structure, an N-type ion implantation process for forming the N-type ion implantation region for use in the photodiode, a first P0-type ion implantation process for forming the first P0-type ion implantation region and a spacer formation process are consecutively performed. A second P0-type ion implantation process for forming the second P0-type ion implantation region is performed thereafter.

A solid-state imaging apparatus which includes a semiconductor portion having a first face on the light incident side and a second face opposite to the first face, and an optical system arranged on the first face, comprising a first semiconductor region of a first conductivity type provided on the second face side in the semiconductor region, a photoelectric conversion portion provided in the semiconductor portion so as to surround the first semiconductor region, including a second semiconductor region of the first conductivity type, and a gate electrode arranged between the first and the second semiconductor regions on the second face, for transferring a charge generated in the photoelectric conversion portion to the first semiconductor region, wherein the optical system is configured so that a light intensity in the second semiconductor region is higher than that in the first semiconductor region.

The invention relates to a pine needle-shaped nickel-cobalt-copper basic carbonate nano composite material as well as a preparation method and application thereof. The nano composite material is in apine needle shape and is composed of copper hydroxide nanorods and nickel-cobalt-copper basic carbonate nanoneedles arranged on the copper hydroxide nanorods, wherein the nickel-cobalt-copper basic carbonate is a mixture of copper-nickel basic carbonate and copper-cobalt basic carbonate. The preparation method comprises the following steps of carrying out chemical etching on a foam copper sheet togrow a copper hydroxide nanorod, and then growing a nickel-cobalt-copper basic carbonate nanoneedle on the copper hydroxide nanorod through hydrothermal reaction to obtain the pine needle-shaped nickel-cobalt-copper basic carbonate nano composite material. The nano composite material is excellent in electrochemical performance, relatively higher in area specific volume and good in rate capability, is excellent in electrochemical performance when being used for an asymmetric supercapacitor, and has the ultra-long service life, the preparation method is simple, the raw materials are easy to obtain, and the cost is low.

A system for balancing charge within a battery pack with a plurality of cells connected in series, including a capacitor; a processor configured to select a combination of donor cells and receiver cells from the plurality of cells in one of the following two modes: (1) a first mode where the number of donor cells is equal to the number of receiver cells, and (2) a second mode where the number of donor cells is greater than the number of receiver cells; and a plurality of switches that electrically connect the capacitor to the donor cells to charge the capacitor, and that electrically connected the capacitor to the receiver cells to discharge the capacitor. The transfer of charge between cells in the plurality of cells through the capacitor balances the charge within the battery pack.

The present invention provides an organic field effect transistor and a method of fabricating the transistor. The transistor includes a semiconductive film comprising organic molecules. Probe molecules capable of binding to target molecules are coupled to an outer surface of the semiconductive film such that the interior of the film being substantially free of the probe molecules.

Embodiments of the present invention provide a composite negative electrode material, which comprises a three-dimensional nitrogen-doped carbon skeleton and a tin-based active substance loading substance, wherein the tin-based active substance loading substance is distributed on the three-dimensional nitrogen-doped carbon skeleton surface. The embodiments of the present invention further provide a preparation method of the composite negative electrode material, a lithium ion secondary battery negative electrode sheet containing the composite negative electrode material, and a lithium ion secondary battery containing a lithium ion secondary battery negative electrode active material.

A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. The charge storage region is adjacent to a gate of a transistor. The transistor gate is adjacent to the photo-conversion device and, in conjunction with the control gate, transfers photo-generated charge from the photo-conversion device to the charge storage region.

An image sensor includes: a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a first depth from a surface portion of the semiconductor layer; a first spacer formed on each sidewall of the gate structure; a second impurity region of the first conductive type, aligned with the first spacer and extending to a second depth that is larger than the first depth from the surface portion of the semiconductor layer; a second spacer formed on each sidewall of the first spacer; a third impurity region of the first conductive type aligned with the second spacer and extending to a third depth that is larger than the second depth from the surface portion of the semiconductor layer; and a fourth impurity region of a second conductive type beneath the third impurity region.

An imager having gates with spacers formed of a high dielectric material. The high dielectric spacer provides larger fringing fields for charge transfer and improves image lag and charge transfer efficiency.

The present invention provides an OMC (Ordered Mesoporous Carbon)-based composite electrode and a lead-acid battery. The OMC-based composite electrode comprises a negative plate grid and lead plasterof an OMC / sponge Pb composite structure material, wherein the lead plaster of the OMC / sponge Pb composite structure material coats the negative plate grid, and the OMC-based composite negative electrode is prepared after solidification and drying. The OMC-based composite negative electrode is prepared by coating lead plaster of the OMC / sponge Pb composite structure material on the negative plate grid for curing and drying. The OMC-based composite electrode and the lead-acid battery are favorable for improving the specific capacity and the service life of the lead-acid battery. The technology of the traditional lead-acid battery negative electrode and the technology of the super capacitor are fused, so that the energy advantage of the battery characteristic is achieved, and the instant power high-capacity charging characteristic of the double electric layer capacitor is achieved, so that the specific capacity and the service life of the traditional lead-acid battery are improved.

A method of manufacturing a solid image pick-up device comprising a photoelectronic conversion portion, a charge transfer portion and a peripheral circuit portion, the method comprising:forming a pattern comprising a first layer silicon conductive film to a surface of a semiconductor, the first layer silicon conductive film forming: a first electrode; and a first layer interconnection for the photoconductive conversion portion and the peripheral circuit portion; forming an insulative film at least to a side wall of the first electrode; forming a second silicon conductive film being to form a second electrode to the semiconductor substrate; coating a resist over the semiconductor substrate by a spin coating method; and planarizing the second layer silicon conductive film by a resist etching-back method,wherein the pattern further comprises at least one dummy pattern, and a surface level of the resist is not below a predetermined value over the semiconductor substrate.

The invention discloses a sodium-ion battery diaphragm and a preparation method thereof. The specific method comprises the following steps: adding a certain amount of mixed powder of PVDF and PAN (indifferent mass ratios) into an appropriate solvent; placing the mixture on a constant-temperature magnetic stirrer at a certain temperature, stirring the mixture for 2 hours to completely dissolve PVDF and PAN, then performing stirring at normal temperature for 12 hours to obtain uniform spinning solution with a certain concentration, placing the uniform spinning solution silently in a vacuum environment for a period of time, and removing bubbles in the spinning solution; and then sucking the spinning solution into an injector after standing and defoaming, preparing a PVDF / PAN composite nano-microporous diaphragm by utilizing an electrostatic spinning technology, and then drying and storing the prepared diaphragm for later use. The preparation method is simple in process and low in cost, and the prepared PVDF / PAN composite nano-diaphragm has the advantages of high ionic conductivity, high porosity, uniform pore size distribution, good electrolyte wettability, good cycle performance andthe like.

A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.