112results about How to "Occurrence is suppressed" patented technology

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

In an imaging apparatus, an erroneous shake correction is prevented from being performed due to a front curtain shock. A shutter selecting section determines a current state is a shake-correction execution mode when a shake correction switch is ON, when a tripod detection sensor tripod is not mounted, when a shake detection sensor senses a shake amount equal to or larger than a predetermined value, and when a shutter speed is lower than a predetermined value. In this case, the shutter selecting section selects an electronic focal plane shutter as the front curtain, and supplies an operation command signal to an electronic focal plane shutter control section. In other cases, the shutter selecting section determines the current state is not the shake-correction execution mode, and selects a mechanical focal plane shutter as the front curtain and supplies an operation command signal to a shutter drive control section.

A picture-frame size of a display device including self light-emitting type display elements which are driven by a current is reduced over conventional devices. Transistors for controlling supply of a light-emission enable signal outputted from an emission driver to emission lines are provided between the emission driver and the emission lines. In such a configuration, based on selection signals provided to the transistors, one of the transistors is brought into an on state in each subframe, and each of the transistors is brought into an on state once during one frame period.

In an electronic component mounting structure, a semiconductor element (an electronic component) provided with an electrode pad and a board provide with an electrode pad corresponding to the electrode pad are connected via a conductive material portion. On a surface of the board, there is formed solder resist having an opening regulating an area of the electrode pad. The conductive material portion is formed to protrude from a surface of the solder resist. An elastic coefficient of the conductive material portion is lower than that of the solder resist. A solder bump and the conductive material portion are connected via a metal layer. The conductive material portion is formed to have an area larger than that of the opening of the solder resist. An edge of the conductive material portion is adhered to a portion of the surface of the solder resist. Thus, in a case of mounting an electronic component on a board by flip-chip connection, a reliability of connection can be secured.

A pixel array is provided in which cells are arranged in a matrix. Each cell includes a photodiode, an FD, a transfer transistor, a reset transistor, an amplifying transistor having a gate electrode connected to the FD, a drain connected to a power supply line, and a source connected to a vertical signal line, and an FD wire. The FD wire is provided in a first wiring line, and the vertical signal line is provided in a second wiring line positioned over the first wiring layer. Since the potential of the FD wire follows the potential of the vertical signal line, it is possible to suppress a variation in capacitance occurring in the FD when a position of the vertical signal is shifted, depending on a position of the cell.

An interposer includes a plurality of first connection electrodes each of which is arranged on either of first- and second-side-surface sides of a first principal surface of a substrate; a plurality of second connection electrodes each of which is arranged on either of first- and second-side-surface sides of a second principal surface of the substrate; and a plurality of third connection electrodes each of which is arranged on either of first and second side surfaces. Each of the first connection electrodes has a first portion located away from an edge of the first principal surface, and a second portion extending from the first portion to the edge and connected to the third connection electrode. Each of the second portion of each first connection electrode and the plurality of third connection electrodes has a width smaller than a width of the first portion of each first connection electrode.

A design method of a semiconductor device includes four steps. The first step is of arranging grid wiring which includes a plurality of wiring lines arranged in parallel to each other and a plurality of vias connecting the plurality of wiring lines with each other. The second step is of arranging a plurality of internal circuits connected to the grid wiring. The third step is of calculating a current density of a current flowing in the grid wiring by the plurality of internal circuits. The fourth step is of dividing each of the plurality of wiring lines into portions each having a wiring length such that electromigration corresponding to the current density is suppressed.

The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.

A power transmission apparatus for a vehicle includes: a first shift unit; a second shift unit; an electric motor connected to a rotating element of the first shift unit or the second shift unit so that the rotational speed changes in accordance with a gear-shift of the first shift unit or the second shift unit; and a control unit that controls at least one of start timings of inertia phases of the gear-shifts of the first and second shift units using the electric motor, when the gear-shifts of the first and second shift units are performed simultaneously and gear ratios of the first and second shift units are changed in opposite directions. With this control, in the simultaneous gear-shift, the gear-shift of one of the shift units is started and completed in a period from start of the gear-shift of the other shift unit until completion of this gear-shift.

A medical port includes a disc-shaped valve 1 in which an insertion hole is formed in a central portion 1a, a base seat 7 that supports the valve from a lower surface side, and a cover 2 that has a fitting hole exposing an upper surface of the central portion of the valve and covers at least a peripheral edge of the valve from the upper surface side, the fitting hole being formed so that when an inserting body has been inserted into the insertion hole, a fit between the inserting body and the fitting hole can cause the inserting body to be locked against the cover. An annular protrusion 1d is formed in the valve 1, the annular protrusion being continuous in the circumferential direction, and formed in the valve 1 so that in the state in which the inserting body is locked against the cover, the annular protrusion is in contact with an outer circumferential surface of a leading end portion of the inserting body.

A power transmission apparatus for a vehicle includes a main drive power source; a first shift unit that has an input shaft connected to the main drive power source; a second shift unit; at least one electric motor connected to a rotating element of the first shift unit or a rotating element of the second shift unit so that the rotational speed of the electric motor is changed in accordance with a gear-shift of the first shift unit or the second shift unit, and that is able to control the rotational speed of the main drive power source by changing its rotation; and a control unit that executes control so that the direction in which the rotational speed of the main drive power source is changed is maintained constant throughout a gear-shift, when the gear-shift is a simultaneous gear-shift in which the gear-shift of the first shift unit and the gear-shift of the second shift unit are performed simultaneously and a gear ratio of the first shift unit and a gear ratio of the second shift unit are changed in opposite directions. With the control executed by the control unit, it is possible to effectively suppress occurrence of shift shock.

A solid-state image device includes a silicon substrate, and a photoelectric conversion layer arranged on the silicon substrate and lattice-matched to the silicon substrate, the photoelectric conversion layer being composed of a chalcopyrite-based compound semiconductor of a copper-aluminum-gallium-indium-sulfur-selenium-based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium-based mixed crystal.

A semiconductor device that can suppress deterioration in crystal quality caused by a lattice mismatch between a substrate and an epitaxial layer and that also can ensure a voltage sustaining performance, and a wafer for forming the semiconductor device. An epitaxial wafer of silicon carbide (SiC), which is used for manufacturing a semiconductor device, includes a low resistance substrate and an epitaxial layer provided thereon. The epitaxial layer is doped with the same dopant as a dopant doped into the substrate, and has a laminated structure including a low concentration layer and an ultrathin high concentration layer. A doping concentration in the low concentration layer is lower than that in the silicon carbide substrate. A doping concentration in the ultrathin high concentration layer is equal to that in the silicon carbide substrate.

A method for manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide, obtaining a silicon carbide substrate by cutting the ingot, and forming a chamfer portion in a region including an outer peripheral surface of the silicon carbide substrate. In the step of obtaining the silicon carbide substrate, the ingot is cut such that a main surface of the silicon carbide substrate forms an angle of not less than 10° with respect to a {0001} plane.

A pixel array is provided in which cells are arranged in a matrix. Each cell includes a photodiode, an FD, a transfer transistor, a reset transistor, an amplifying transistor having a gate electrode connected to the FD, a drain connected to a power supply line, and a source connected to a vertical signal line, and an FD wire. The FD wire is provided in a first wiring line, and the vertical signal line is provided in a second wiring line positioned over the first wiring layer. Since the potential of the FD wire follows the potential of the vertical signal line, it is possible to suppress a variation in capacitance occurring in the FD when a position of the vertical signal is shifted, depending on a position of the cell.

An imaging lens includes in order from an object side, a stop and a first lens to a fourth lens. Both the surfaces of a third lens have surfaces including at least one inflection point, and an inclination of each surface at the terminal end part of a periphery within an effective diameter collapses toward the image side. And 0.1<D3 / D4<2.0, νd1−νd2>25, 0.4<f1 / f3<1.6 and 0.3<f / f3<1.5 are satisfied, where D3 is an air space on an optical axis between the first lens and the second lens, D4 is a central thickness of the second lens, νd1 and νd2 are Abbe numbers of the first lens and the second lens, f1 and f3 are focal lengths of the first lens and the third lens and f is a focal length of an entire system.

A method of manufacturing an electronic component-embedded board is provided which is capable of suppressing warpage without requiring complicated processes at low cost and which offers high productivity and economic efficiency. A worksheet 100 includes insulating layers 21 and 31 on one surface of an approximately rectangular substrate 11, and an electronic component 41 and a plate-like frame member (member) 51 embedded inside the insulating layer 21, wherein the plate-like frame member 51 satisfying the relationship represented by the following formula (1): α1<α3 and α2<α3 . . . (1), is mounted on an unmounted portion of the electronic component 41 on the substrate 11. In the formula, α1, α2 and α3 respectively denote the linear coefficients of thermal expansion (ppm / K) of the electronic component 41, the plate-like frame member 51, and the substrate 11, the respective wiring layers or the respective insulating layers.

A field-effect transistor has: a substrate having a first cavity; a gate electrode buried in the substrate; and diffusion layers formed in the substrate and being in contact with the first cavity. A channel region is formed substantially perpendicular to a surface of the substrate between the diffusion layers.

An imaging lens includes in order from an object side, a stop and a first lens to a fourth lens. Both the surfaces of a third lens have surfaces including at least one inflection point, and an inclination of each surface at the terminal end part of a periphery within an effective diameter collapses toward the image side. And 0.1<D3 / D4<2.0, νd1−νd2>25, 0.4<f1 / f3<1.6 and 0.3<f / f3<1.5 are satisfied, where D3 is an air space on an optical axis between the first lens and the second lens, D4 is a central thickness of the second lens, νd1 and νd2 are Abbe numbers of the first lens and the second lens, f1 and f3 are focal lengths of the first lens and the third lens and f is a focal length of an entire system.

A toner fixing apparatus characterized by provision of a provisional fixing portion provided with a provisional fixing component having an infrared heater irradiating infrared radiation onto a printed surface of the web and a main fixing portion provided downstream in the web flow in the provisional fixing portion and nipping the web with heat rollers performing a main fixing operation or having a plurality of main fixing units. According to this invention, a toner fixing apparatus and an electrophotographic printing device including the toner fixing apparatus are provided which display excellent fixing properties during multicolor image formation, excellent heating efficiency and excellent economy with respect to installation space.

An electric rotating machine for a vehicle is equipped with a load dump protector. The load dump protector works to selectively perform a first and a second load dump protection operation to suppress a voltage surge arising from the load dump. When a rate at which an output voltage from the electric rotating machine is determined to be smaller than a given value, the load dump protector waits for stating the first load dump protection operation until the time when a voltage surge arising from changing of switching devices of a rectifier module of the electric rotating machine is expected to be suppressed and then performs the first load dump protection operation. When the rate is greater than the given value, the load dump protector immediately initiates the second load dump protection operation. This ensures the stability in eliminating the risk of a voltage surge arising from the load dump.

A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

In a process of manufacturing polylactide, synthesis of high-quality polymers is achieved with a sufficient degree of vacuum secured. Provided is an apparatus for manufacturing polylactide which includes the steps of preparing lactide through oligomerization of lactic acid and depolymerization of the resulting oligomers, effecting ring-opening polymerization of the lactide, and removing unreacted lactide. The apparatus comprises an exhausting gas treatment device for reducing pressure in the step of removing unreacted lactide. The exhausting gas treatment device includes boilers (81-83) for generating water vapor; a pressure-reducing section having stages each including an ejector (71-73) driven with the water vapor, a condenser (61-63) connected downstream of the ejector, and a hot well tank (41-43) connected to the condenser; and a main condenser 60 and a main hot well tank 40 connected to the main condenser that are disposed on a pipe line through which a gas of the unreacted lactide is suctioned into the pressure-reducing section. The gas of the unreacted lactide is washed away in the main condenser using a liquid containing lactic acid as a main component that has been collected in the main hot well tank.

The present invention provides a magnetic toner which is hardly influenced by an environment, and with which an image with high quality and excellent resolution can be stably even under low humidity. In the magnetic toner of present invention:I) a ratio of an iron element content to a carbon element content present on the toner particle surface is less than 0.0010;II) 50 number % or more of toner particles satisfy a relationship of D / C≦0.02 (C: projected area diameter of toner particles, D: minimum value for a distance between a magnetic iron oxide fine particle and the toner particle surface); andIII) 40-95 number % of toner particles satisfy a structure where 70 number % or more of the magnetic iron oxide fine particles in the respective toner particles are present up to a depth of 0.2 time as far as C from the toner particle surface.

A bobbin and a magnetic transmitting / receiving stator are positioned by fitting two positioning projections provided for a bobbin flange into two positioning holes formed in a stator flange. The positioning hole has a circular shape and the positioning projection has a flat oval shape which matches a diameter part of the circular shape so that a resin-passing gap is formed between the shapes. Since the resin-passing gap plays the role equivalent to the role of a resin passing hole, the total number of positioning holes and the resin passing holes can be reduced, and magnetic flux passing through the stator flange can be prevented from decreasing. Since a post-forming resin flows through the resin-passing gap in the positioning part, the flow of the post-forming resin can be made uniform in the whole periphery, and occurrence of poor molding can be restricted.

A reaction liquid destabilizing the dissolved state or dispersed state of a coloring material by being in contact with an ink containing the coloring material on a recording medium, wherein the reaction liquid contains at least calcium ions, glycerin and polyethylene glycols, and wherein the content and ratio of these components are specified.

A solid-state imaging device includes a silicon substrate, and a photoelectric conversion layer arranged on the silicon substrate and lattice-matched to the silicon substrate, the photoelectric conversion layer being composed of a chalcopyrite-based compound semiconductor of a copper-aluminum-gallium-indium-sulfur-selenium-based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium-based mixed crystal.

A lower electrode layer 2, an upper electrode layer 4 formed above the lower electrode layer 2, and a metal oxide thin film layer 3 formed between the lower electrode layer 2 and the upper electrode layer 4 are provided. The metal oxide thin film layer 3 includes a first region 3a whose value of resistance increases or decreases by an electric pulse that is applied between the lower electrode layer 2 and the upper electrode layer 4 and a second region 3b arranged around the first region 3a and having a larger content of oxygen than the first region 3a, wherein the lower and upper electrode layers 2 and 4 and at least a part of the first region 3a are arranged so as to overlap as viewed from the direction of the thickness of the first region 3a.

The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.