According to the trans-
perovskite cell and the preparation method thereof, the n-type
amorphous silicon layer is additionally arranged on the
electron transmission layer, and the dual advantages of
electron conduction and compactness of the n-type
amorphous silicon layer are utilized, so that on one hand,
electron transmission is not affected, and meanwhile, the
conductivity of the n-type
amorphous silicon layer is improved; on the one hand, damage to the
perovskite layer due to magnetron
sputtering and the like during preparation of the back
electrode can be resisted, the efficiency of the
assembly is improved, on the other hand, migration of
metal ions in the back
electrode and influence on the performance of the
perovskite assembly can be effectively prevented, water and
oxygen invasion can be effectively prevented, the stability of the trans-perovskite
cell is improved, and the performance of the trans-perovskite
cell is improved when the trans-perovskite cell is continuously operated for 450h at the maximum power point (MPP). After the n-type amorphous
silicon layer is additionally arranged, the normalization efficiency is basically not attenuated.