157 results about "Vertical transfer" patented technology

A solid-state image pickup device includes a plurality of light sensing sections; a plurality of vertical transfer registers configured to transfer signal charge of the plurality of light sensing sections in the vertical direction; a horizontal transfer register configured to transfer the signal charge in the horizontal direction; a floating gate amplifier that is placed at an output side of the horizontal transfer register; a floating diffusion amplifier that is placed in a horizontal transfer register which is provided at a stage subsequent to the floating gate amplifier; and an overflow drain mechanism that is placed in the horizontal transfer register between the floating gate amplifier and the floating diffusion amplifier.

A solid state image pickup device is provided which includes: charge accumulation regions disposed in a semiconductor substrate in a matrix shape; a plurality of vertical transfer channels formed in the semiconductor substrate each in a close proximity to each column of the charge accumulation regions; vertical transfer electrodes formed above the vertical transfer channels; a channel protective impurity layer formed just under the vertical transfer channel and surrounding the charge accumulation region; one or more pixel separation impurity layers formed under the channel protective impurity layer and at a position facing the channel protective impurity layer; an overflow barrier region having a peak position of an impurity concentration at a position deeper than the pixel separation impurity layer, the peak position of the impurity concentration being at a depth of 3 μm or deeper from a surface of the semiconductor substrate; and a horizontal CCD for transferring signal charges transferred from the vertical transfer channels in a horizontal direction.

An imaging apparatus is provided for reducing noise which is derived from random noise contained in a correction signal used for correcting an image data and is newly generated on correction of the image data. The imaging apparatus drives vertical transfer registers with no signal charge from photoelectric transducers read out to the vertical transfer registers to obtain and store a correction signal into a field memory. The apparatus subtracts the correction signal from the image data by a subtractor.

A solid state image pickup device is provided which includes: charge accumulation regions disposed in a semiconductor substrate in a matrix shape; a plurality of vertical transfer channels formed in the semiconductor substrate each in a close proximity to each column of the charge accumulation regions; vertical transfer electrodes formed above the vertical transfer channels; a channel protective impurity layer formed just under the vertical transfer channel and surrounding the charge accumulation region; one or more pixel separation impurity layers formed under the channel protective impurity layer and at a position facing the channel protective impurity layer; an overflow barrier region having a peak position of an impurity concentration at a position deeper than the pixel separation impurity layer, the peak position of the impurity concentration being at a depth of 3 μm or deeper from a surface of the semiconductor substrate; and a horizontal CCD for transferring signal charges transferred from the vertical transfer channels in a horizontal direction.

In a solid-state image pickup device, third transfer electrodes are disposed in parallel to vertical transfer registers, and second transfer electrodes are disposed vertically to the vertical transfer registers. These transfer electrodes are also formed on the read-out gate portions to supply a driving voltage for reading out signal charges from photoelectric conversion elements. On the basis of the driving voltage applied to both the third and second transfer electrodes, the read-out of the signal charges to the vertical transfer registers is carried out. At the portion where the read-out of the signal charges is carried out, the transfer electrode at the read-out gate portion side and the sensor area of the photoelectric conversion element are formed so as to be adjacent to each other. At the portion where no read-out of signal charges is carried out, an offset area is provided between the transfer electrode at the read-out gate portion side and the sensor area of the photoelectric conversion element.