126results about How to "High speed read" patented technology

To provide a NOR-type nonvolatile semiconductor memory that can inject electric charge into a charge accumulation layer through the use of an FN tunnel current without compromising an increase in the packing density of memory cells. The above problem is solved by a nonvolatile semiconductor memory in which nonvolatile semiconductor memory cells are arranged in a matrix, each nonvolatile semiconductor memory cell having an island semiconductor layer in which a drain diffusion layer formed in the upper part of the island semiconductor layer, a source diffusion layer formed in the lower part of the island semiconductor layer, a charge accumulation layer formed on a channel region of the side wall sandwiched between the drain diffusion layer and the source diffusion layer via a gate insulation film, and a control gate formed on the charge accumulation layer are formed. Further, bit lines connected to the drain diffusion layer are laid out in a column direction, control gate lines are laid out in a row direction, and source lines connected to the source diffusion layer are laid out in the column direction.

An image forming apparatus has a printing section and a document reading section. The printing section prints on paper while transporting it. The document reading section includes a document transport portion which automatically transports, sheet by sheet, a document placed thereon. The document reading section generates image data by reading the document. The document reading section is operable in an ordinary reading mode in which it reads the document at a previously determined ordinary speed and in a quiet reading mode in which it reads the document at a quiet speed lower than the ordinary speed. The document reading section reads the document in the quiet reading mode when the printing section is not printing and in the ordinary reading mode when the printing section is printing.