Semiconductor Memory

a technology of semiconductor devices and memory cells, applied in semiconductor devices, digital storage, instruments, etc., can solve the problems of limitation of conventional memory cells in implementing high-speed performance of cells, and achieve the effect of preventing the occurrence of read disturbances
US20070217254A1Inactive Publication Date: 2007-09-20RENESAS ELECTRONICS CORP
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
RENESAS ELECTRONICS CORP
Publication Date
2007-09-20
Estimated Expiration
Not applicable · inactive patent

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Abstract

A phase-change memory for employing chalcogenide as a recording medium is disclosed, which prevents the read disturbance from being generated, and reads data at high speed. In a phase-change memory cell array including a selection transistor and chalcogenide, a substrate potential of the selection transistor is isolated in a direction perpendicular to the word lines. During the data recording, a forward current signal flows between the substrate and the source line connected to chalcogenide, and the selection transistor is not used. During the data reading, a desired cell is selected by the selection transistor. Therefore, a recording voltage is greatly higher than the reading voltage, such that the occurrence of read disturbance is prevented, and a high-speed operation is implemented.
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Description

TECHNICAL FIELD

[0001] The present invention relates to a semiconductor memory, and more particularly to a non-volatile random access memory (RAM) operated at low voltage at high speed. BACKGROUND ART

[0002] With the increasing demands of mobile devices such as mobile phones, non-volatile memories and associated technology are being rapidly researched by many developers throughout the world. A representative example of the non-volatile memory is a flash memory. The flash memory is operated at low speed, such that it has been widely used as a programmable ROM.

[0003] In the meantime, a high-speed DRAM is required for an operation memory. A memory for portable or mobile devices includes not only the flash memory but also the DRAM. If a semiconductor device including characteristics of the above-mentioned two memories (i.e., the flash memory and the DRAM) can be implemented, the flash memory and the DRAM can be integrated into a single chip, and this integrated chip can substitute for ...

Claims

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