56 results about "Hot electrons" patented technology

The invention discloses an ion etching device for PVD (Physical Vapor Deposition) coating equipment. The ion etching device comprises an auxiliary anode, a main and standby double-group tungsten filament heating module, an inert gas directional introduction module, a vacuum and electric connection module and a control and protection module. Through the design of the main and standby tungsten filaments and the automatic overlapping switching strategy, it is ensured that when one tungsten filament fails, seamless switching to the standby tungsten filament can be achieved, shutdown caused by filament breakage or degradation is effectively avoided, the service life of the device is prolonged, long-period continuous production is guaranteed, and the operation efficiency and production continuity of the device are greatly improved. Meanwhile, electric arc particle pollution is avoided through hot electron emission, and the surface cleanliness is high; the matching range of pressure, bias pressure and gas is wide, the method is suitable for multiple materials and complex morphology, and the process repeatability is good; the flange and the electric penetration assembly are modularized, and the tungsten filament / anode / gas supply assembly is quickly replaced, so that the maintenance time is shortened, and the maintenance cost is reduced; the whole system is simple in structure, does not need a complex magnetic field and a multi-stage electrode, and is low in equipment manufacturing cost.

The application relates to the technical field of photoelectric detection, and discloses an infrared detector and a preparation method thereof. The infrared detector comprises a substrate, a metal sensitive film, a light absorption enhancement structure and a current transmission structure. The light absorption enhancement structure comprises a Schottky junction. The Schottky junction is formed by etching an arrayed pattern on a silicon substrate, the arrayed pattern is filled with metal, the silicon substrate is in contact with the metal to form the Schottky junction, and the Schottky interface is subjected to roughening treatment to enhance hot electron absorption. The current transmission structure comprises a silicon substrate, a P-type conductive structure, an N-type conductive structure and a dielectric material. The current generated by the light absorption enhancement structure is led out from the P-type and N-type conductive structures. The Schottky interface is subjected to roughening treatment to enhance hot electron absorption, a back-illumination method is adopted, and the free path of hot electron transmission is shortened, so that the quantum efficiency of the detector is improved.

The application discloses a method for realizing ionosphere aircraft stealth based on regulating and controlling electron distribution of tail area, first, evolution time scales under different non-extended parameters are calculated; and according to the superhot electron energy and particle flux per unit time required by different non-extended parameters, a radio frequency discharge plasma generator is controlled to generate plasma corresponding to the non-extended parameters; then, in the grid electric field, electrons enter the acceleration field area, and ions are directly discharged to the tail area of the aircraft without acceleration; the regulation and control duration under different non-extended parameters is determined by the evolution time scale corresponding to the non-extended parameter. The application changes the electron distribution of the ionosphere aircraft tail area by randomly injecting high-energy electrons into the tail area of the aircraft, regulates and controls the evolution law and characteristic scale of the non-linear local cavity in the tail area which cannot be eliminated, makes the anti-stealth method of monitoring the motion of the density cavity to detect the ionosphere stealth aircraft invalid, and thus realizes the stealth of the ionosphere stealth aircraft.

The invention discloses a vacuum measuring tool and a vacuum degree measuring method, and the vacuum measuring tool comprises a measuring circuit which comprises a power supply which is a constant-voltage constant-frequency AC power supply; a resistive element; the current detection element is connected in series with the resistance element and is used for acquiring a current measurement value of the measurement circuit; the capacitor assembly is connected with the resistor element in series; a medium space between polar plates of the capacitor assembly is used for being communicated with a to-be-measured space, a current measurement value collected by the current detection element is in positive correlation with a capacitance value of the capacitor assembly, and the capacitance value of the capacitor assembly is in positive correlation with the vacuum degree of the to-be-measured space. According to the invention, the capacitor assembly is adopted to form the measurement circuit, the conversion from the collected current measurement value to the vacuum degree is realized, the device can be suitable for the measurement in different vacuum states, the precision is high, the integration degree is high, the space is saved, and the system complexity and the maintenance cost are reduced; and the technical barrier that a hot cathode vacuum gauge receives hot electrons is effectively avoided, and the problem that a high-vacuum measuring tool is short in service life is fundamentally solved.

The invention relates to the technical field of solar cells, and particularly discloses a crystalline silicon thermal electron solar cell and a photovoltaic module, which comprise a silicon substrate, and the silicon substrate comprises a P-type region and an n-type region positioned on one side of an illumination surface of the P-type region; the illumination surface of the silicon substrate is provided with a silver collection gate electrode, and the back side of the silicon substrate is provided with a silver extraction electrode; an Ag-Si semiconductor alloy junction is arranged at the position, corresponding to the silver collection gate electrode, in the silicon substrate, an n-type ultra-shallow diffusion layer is formed on the outer side of the Ag-Si semiconductor alloy junction, an n-P junction is formed between the n-type ultra-shallow diffusion layer and the P-type region, and the n-P junction and the n-P junction form a three-dimensional PN junction quantum well; the silver collection gate electrode and the Ag-Si semiconductor alloy structure form a contact electrode. Thermo-electron transmission is accelerated, thermo-electron extraction and utilization are realized, and the photoelectric conversion efficiency is further improved.

The application provides an ion source upper cover assembly and an ion source device. The fixed shielding cage in the ion source upper cover assembly can prevent the annular filament from being directly in contact with external structures to cause deformation or damage. The structure of the annular filament can effectively push the hot electrons emitted by the annular filament towards the ionization chamber, improve the ionization effect, and the ion source device is provided with the annular filament. The annular filament, the ionization cylinder and the shielding cage are coaxial, so that the electrons emitted by the annular filament can move in a more uniform electric field, thereby improving the probability of electron bombardment on the sample gas and improving the ionization efficiency and stability of the ion source device. Meanwhile, the ion source device has a wide range of emission current dynamic interval, strong anti-interference ability and wide range of sensitivity linear plateau area. The total pressure focusing electrode structure in the ion source device can also monitor the vacuum value in the detected space in real time, thereby playing a role in protecting the filament and the vacuum system.

The invention provides a microwave drive control device. The microwave drive control device comprises a power converter; the first full-bridge inverter circuit is conductively connected with the power converter; the first voltage transformation circuit is connected with the first full-bridge inverter circuit in a conducting manner; the voltage doubling circuit is conductively connected with the first voltage transformation circuit; the magnetron is conductively connected with the voltage doubling circuit, and the magnetron is provided with a lamp filament; and the filament preheating circuit is conductively connected with the power converter and the filament of the magnetron, and the filament preheating circuit is used for preheating the filament before the high voltage is sent to the magnetron and is triggered after the filament is heated to a hot electron emission temperature. Through the filament preheating circuit, the filament can be preheated and then is driven by high voltage, so that the service life of the filament can be prolonged. In addition, the service life of the lamp filament is predicted by detecting the resistance value of the lamp filament and through a curve of the resistance value and the service life of the lamp filament.

This invention provides the preparation and application of a dual LSPR effect nitrogen-fixing material with increased hot electron concentration at active sites. PMoV and Ag are attached to W via electrostatic self-assembly and photodeposition. 18 O 49 On the surface, Ag / W with dual LSPR effect was successfully prepared. 18 O 49 / PMoV heterojunction, experimental data show that W 18 O 49 It can absorb photogenerated electrons produced by PMoV and Ag, and the injected photogenerated electrons are in W 18 O 49 Enrichment at OVs on the surface, thus preserving W 18 O 49 Plasma effect, Ag / W 18 O 49 The fluorescence lifetime of photogenerated carriers in PMoV is prolonged, and the loading of Ag and PMoV is Ag / W. 18 O 49 / PMoV provides a new pathway for the migration of photogenerated electrons and holes, Ag / W 18 O 49 The nitrogen fixation activity of the / PMoV heterojunction was enhanced, and the ammonia generation rate reached 118.4 µmol g. −1 h −1 , is W 18 O 49 The yield is 3.6 times higher, and the experimental parameters are easy to control in this synthetic route.

The application relates to a solar heat absorber with self-power generation and heat storage functions and a running method thereof, and belongs to the technical field of solar heat absorbers. The heat absorber comprises a heat absorption pipe, an upper header tank, a lower header tank and a heat storage system, wherein a plurality of heat absorption pipes are arranged side by side between the upper header tank and the lower header tank, and the upper header tank and the lower header tank are respectively connected with the heat storage system; the wall of the heat absorption pipe is a multilayer structure, and from outside to inside, the multilayer structure comprises a hot electron anode, an electrode gap, a hot electron cathode and a heat transfer metal pipeline in sequence; the heat transfer metal pipeline circulates a heat transfer working medium; and the hot electron anode and the hot electron cathode are respectively connected with an external load through an anode lead wire and a cathode lead wire. The heat absorber has the function of power generation, can store heat by using concentrated light energy, and improves the efficiency and stability of the entire power generation system.

The invention relates to the technical field of biomedical sensing and wearable health monitoring, and discloses a photoelectrochemical sensing microneedle, a preparation method thereof, a monitoring system and a detection method. The sensing microneedle comprises a swellable dual-network hydrogel microneedle substrate, a three-dimensional conductive network and a semiconductor nanostructure, wherein the three-dimensional conductive network is composed of high-length-diameter-ratio metal nanowires with a local surface plasma resonance effect, and the semiconductor nanostructure is compounded on the surfaces of the metal nanowires and forms a Schottky heterojunction. The mechanical constraint of the rigid polymer skeleton and the high length-diameter ratio of the metal nanowire cooperate to ensure the continuity of the conductive network in a swelling state. Under the irradiation of exciting light, hot electrons are migrated to the surface of a semiconductor through a Schottky junction built-in electric field to generate reactive oxygen free radicals, non-enzymatic catalytic oxidation is carried out on a target analyte in interstitial fluid under zero bias voltage or low bias voltage, a photocurrent signal is generated, and integration of minimally invasive sampling and in-situ high-selectivity detection is realized.

An X-ray tube according to an embodiment includes a periphery that keeps the inside in vacuum, an anode target that generates X-rays by collision of hot electrons, and a cathode electron gun that emits the hot electrons to the anode target, and includes a periphery assembly that has a metal cylindrical support body fixing portion and constitutes the periphery, and a cathode assembly that has a metal support body that holds the cathode electron gun at a front end portion, and in the support body fixing portion, the support body of the cathode assembly is fixed at an inner peripheral side by welding.

This paper presents a low-interface-state gallium nitride (GaN) power device structure and fabrication method based on fluoride gate dielectric, belonging to the field of semiconductor device technology. Firstly, utilizing the principle of seamless filling in high aspect ratio structures, dielectric filling and repair are achieved in the deep recesses of the gate trench in the MIS recessed gate structure, suppressing electric field concentration at the corners and long-term device reliability degradation. Next, the principle of fluoride ion implantation is introduced to grow fluoride as the gate dielectric, improving current density while maintaining high interface quality and strong gate control capability, and reducing device instability caused by fluoride ion implantation. Secondly, fluoride is selectively grown in the gate region using magnetron sputtering, leveraging the advantages of fluoride treatment while ensuring device current density and on-resistance. The wide bandgap of fluoride can suppress hot electron injection under high electric field conditions, while the strong electronegativity of fluoride ions helps passivate the donor states on the GaN surface, forming better interface quality and improving gate leakage current and reliability degradation.

The invention provides a GaN HEMT (High Electron Mobility Transistor) device and a manufacturing method thereof, which are characterized in that at least one heat conduction hole is arranged in a field plate area corresponding to the GaN HEMT device, the heat conduction hole extends upwards from the back of the device and stops on the lower surface of a passivation layer on the surface of the device, and a heat conduction material is formed in the heat conduction hole and can conduct heat from a heating core of the device to the outside. According to the GaN HEMT device provided by the invention, the heat dissipation capability of the GaN HEMT device is effectively improved, the influence of a self-heating effect on the carrier mobility is reduced, the saturation leakage current and the reduction of transconductance are avoided, the gate leakage current and the hot electron damage are reduced, the reliability of the device is improved, and the service life of the device is prolonged.

An apparatus comprising: an ion trap, for example a 2 dimensional, 2D, ion trap such as a linear quadrupole ion trap, LIT, wherein the ion trap comprises a set of electrodes, for example wherein the 2D ion trap comprises two or more pairs of rod electrodes and optionally two end electrodes; a power supply configured to: generate a substantially rectangular radio frequency, RF, voltage waveform, wherein the RF voltage waveform includes a first set of states including a first state having a first voltage level and a second state having a second voltage level, wherein the first state and the second state are mutually opposed; and apply the generated RF voltage waveform to the set of electrodes, wherein the first set of states provides a trapping field in the ion trap for trapping ions in a trapping region thereof; an electron source, configured to inject electrons into the ion trap for reactions thereof with the ions, for example electron capture dissociation, ECD, hot ECD, electron induced dissociation, EID, and / or electron detachment dissociation, EDD; wherein the RF voltage waveform includes a second set of states including a first state having a first voltage level, wherein the first voltage level of the second set of states is between the first voltage level and the second voltage level of the first set of states; and wherein the electron source is configured to inject the electrons into the ion trap during the second set of states, for example only during the second set of states.

The application discloses a gallium nitride power device with a gate hot electron blocking structure, which comprises a substrate layer, a buffer layer, a channel layer and a barrier layer arranged in sequence from bottom to top; a first P-type material layer, a hot electron blocking structure layer, a second P-type material layer and a gate metal are sequentially arranged above the barrier layer; and a source metal and a drain metal are respectively arranged at both ends of the barrier layer. The barrier layer, the source metal part sidewall, the drain metal part sidewall, the first P-type material layer sidewall, the hot electron blocking structure layer sidewall, the second P-type material layer sidewall and the gate metal part sidewall are all covered with a passivation layer. The application introduces a hot electron blocking structure in the p-GaN gate gallium nitride power device, which can effectively prevent the movement process of hot electrons, thereby significantly reducing the bombardment damage of the hot electrons to the gate Schottky junction and improving the reliability of the device.

The invention discloses a wide-spectrum high-uniformity black silicon integrated nanogold quadrant detector and a preparation method thereof, the wide-spectrum high-uniformity black silicon integrated nanogold quadrant detector comprises a substrate base material, a micro-nano conical B-Si structure is etched on the substrate base material, gold nanoparticles are deposited and covered on the surface of the micro-nano conical B-Si structure, the photoelectric detector is a double-four-quadrant photoelectric detector, and the thickness of the double-four-quadrant photoelectric detector is larger than that of the micro-nano conical B-Si structure. And the boundary area of the double four quadrants is electrically isolated by etching deep grooves and filling oxygen-silicon compounds to form isolation grooves. The gold nanoparticles are compounded on the surface of B-Si, hot electrons can be excited through a localized surface plasma resonance mechanism and injected into a black silicon conduction band to participate in the photoelectric conversion process, the band gap limitation of the B-Si material is broken through, wide spectral response is achieved, the response capability in a near-infrared region is improved, and the photoelectric conversion efficiency is improved. And meanwhile, a silicon oxide and silicon nitride passivation film is introduced to the surface of the black silicon and gold nanoparticle composite structure, and a surface carrier recombination process is inhibited by filling dangling bonds and defect states on the surface of the black silicon pointed cone structure, so that the dark current level of the device is reduced.

The invention discloses a cascaded structure of a thermionic converter and an alkali metal thermoelectric converter, and relates to the technical field of power energy. Comprising a vacuum shell provided with a closed cavity capable of providing a vacuum environment; the thermionic emitter is mounted at one end of the sealed cavity and can be in contact with a heat source in a working state; the alkali metal thermoelectric converter is installed in the sealed cavity, a hot end electrode of the alkali metal thermoelectric converter is right opposite to the thermionic emitter, and the hot end electrode and the thermionic emitter are arranged at an interval; wherein the hot end electrode can receive hot electrons emitted by the thermionic emitter. The thermal ion converter (TIC) and the alkali metal thermoelectric converter (AMTEC) are integrated into a single device, so that intermediate heat loss can be avoided, the theoretical efficiency advantage of two-stage conversion can be brought into full play, and the total efficiency of the system is improved.

The invention relates to a method and a system for automatically calculating Gibbs free energy of a material under different temperature and pressure conditions and constructing a phase diagram. The invention provides a method and a system for automatically calculating Gibbs free energy of a material and constructing a phase diagram. First principle calculation, phonon free energy calculation and hot electron free energy calculation are integrated into a unified automatic platform, so that the calculation efficiency is remarkably improved, and manual intervention is reduced. According to the system, firstly, static self-consistent energy is obtained through calculation according to a first principle, phonon free energy is calculated in combination with a quasi-harmonic approximation method, and hot electron free energy is obtained through electron state density analysis. On the basis, the compatibility among different calculation modules is ensured by adopting an automatic unit conversion and data preprocessing module. The system fits free energy-volume data through a three-order Birch-Murnaghan state equation, and supports adaptive encryption sampling so as to accurately capture phase change and free energy fluctuation under specific temperature and pressure conditions. Finally, the system automatically draws a temperature-pressure phase diagram, and an accurate basis is provided for predicting the thermodynamic stability of the material.

A high electron mobility transistor (HEMT) device including a substrate and a semiconductor stack is provided. The semiconductor stack comprises a lower channel layer, an insertion layer (ISL) positioned above the lower channel layer for confining electrons in the lower channel layer, an upper channel layer, an interface enhancement layer (IEL) positioned above the upper channel layer for confining the electrons in the upper channel layer, and a barrier layer positioned above the IEL. The ISL and the IEL are formed above the lower channel layer and the upper channel layer respectively to create a first and second wide bandgap heterojunction. The ISL and the IEL each provides a higher energy band with a potential barrier with respect to the electrons generated between the ISL and the lower channel layer, and between the IEL and the upper channel layer. The potential barrier prevents or reduces a flow of hot electrons.

A plasma processing device includes: a plurality of processing chambers; a junction exhaust pipe into which a plurality of exhaust flow paths for evacuating interiors of the plurality of processing chambers joins; and a plurality of branch exhaust pipes disposed between the plurality of exhaust flow paths and the junction exhaust pipe and connecting the junction exhaust pipe to the plurality of exhaust flow paths, respectively, wherein each of the plurality of branch exhaust pipes includes a mechanism, which is disposed in a flow path of the branch exhaust pipe, to deactivate energy of hot electrons flowing through the flow path.

An AM system includes a printing chamber having printing ink, the printing ink having inorganic NCs. The AM system also includes a laser source configured to emit a pulsed laser output, one or more optical elements coupled downstream from the laser source and configured to direct the pulsed laser output to the printing chamber, and a controller coupled to the laser source. The controller is configured to cause the pulsed laser output to print one or more layers of an object based upon a flux of photoexcited hot electrons to induce NC fusion via ligand desorption / transformation in the inorganic NCs.

The invention discloses a heterojunction field-effect tube infrared sensor based on a surface plasmon resonance suspended gate and a preparation method thereof, the heterojunction field-effect tube infrared sensor at least comprises a source electrode, a drain electrode, a suspended gate and at least one heterojunction channel, and the source electrode and the drain electrode are electrically connected through the heterojunction channel. Wherein in the AlGaN / GaN heterostructure, the thickness of the AlGaN grid electrode position is extremely thin, and the AlGaN grid electrode position is of a groove grid structure. The surface plasmon resonance suspended gate structure can be a Pd porous nano film, a Pd nanosphere array or a Pd nanorod array and is located on the AlGaN layer. When infrared light enters, the Pd nanostructure excites the SPR effect, a local enhanced electromagnetic field is generated on a metal / semiconductor interface, and hot electrons are excited. The high-energy electrons can be injected into an under-gate AlGaN barrier layer to regulate and control the 2DEG concentration, so that the channel carrier density and the photoconductive effect are improved. And in combination with the high mobility of 2DEG, the infrared detection performance with high sensitivity and quick response is realized.

The present invention relates to an isolation trench and a method of manufacturing an isolation trench. The isolation trench includes an oxide layer on the trench, a nitride liner at the bottom within the oxide layer, a first oxide within the nitride liner and flush with the surface of the nitride liner, and a second oxide on the first oxide; the second oxide is flush with the surface of the oxide layer. By removing a portion of the deposited material in the isolation trench and re-depositing the second oxide, hot carrier electrons that become trapped can be prevented from generating a channel in the active region, thereby avoiding the adverse effects of hot electron punchthrough.

The invention discloses a fast erasing method for a nonvolatile memory based on channel hot electron induced hot hole injection and application of the fast erasing method. In a nonvolatile flash memory with split gates, positive source voltage, positive drain voltage and negative storage gate voltage are applied when a selection gate (MG) and a storage node (MS) are started; high-energy channel hot electrons are generated in the channel; high-density hot holes are generated in a channel region through the collision ionization effect of channel hot electrons; hot holes are injected into the charge trapping layer through the tunneling oxide layer, so that the neutralization of stored electrons is completed, and the erasing operation is realized. According to the invention, the collision ionization effect of hot electrons is utilized to generate high-density hot holes, and the hot holes are injected into the charge trapping layer for rapid erasing, so that the erasing efficiency is remarkably improved, the electric field stress is reduced, and the durability and retention performance of equipment are improved.

X-ray tubes that have a reduced exposure time for dental X-ray imaging and 3D dental imaging systems using these X-ray tubes are described. The X-ray tubes contain an anode, a filament, a cathode electrically connected to the filament, and a voltage source electrically connected to the cathode. The voltage source provides a high voltage to the anode relative to the cathode and filament control voltage. A low filament control voltage is used to generate electrons using a process of thermionic emission. These electrons are driven by a large electric field generated between the cathode and anode towards the target on the anode. A bias voltage is applied between the cathode and the filament to control the electron flow from the emitting filament to the anode. Such a configuration yields a switching speed ranging from about 1 ms to about 10 ms, allowing a short X-ray exposure time and a quicker overall imaging process for the 3D dental X-ray imaging systems. Other embodiments are described.

A control device (1) for controlling the operating efficiency of an irradiation beam emitting device (2) wherein the irradiation beam emitting device (2) comprises: a vacuum chamber (13), a filament (4) configured to emit electrons by a hot electron effect upon heating, a first electrical conductor (6) and a second electrical conductor (5), the invention relates to a control device (1) for a lamp filament (4), a first conductor (6) and a second conductor (5), each arranged inside a vacuum chamber (13), the control device (1) comprising: a power source (9) connectable to the lamp filament (4), the first conductor (6) and the second conductor (5) to supply power to the lamp filament (4), the first conductor (6) and the second conductor (5); a sensing unit (11) comprising at least one first sensor (7) configured to detect at least one electrical parameter relating to a current flowing through the first electrical conductor (6), the current being defined as an ionization current (IC); and a second sensor (8) configured to detect at least one electrical parameter related to a current flowing through the second electrical conductor (5), the current being defined as an emission current (EC); a control unit (10) coupled to the sensing unit (11) to receive the detected electrical parameter and to the power supply (9) and further configured for performing a main control mode (F1) of the state of the irradiation beam emitting device (2), the mode comprising: regulating the power supply (9) to apply a predetermined current to the filament (4) to emit electrons; adjusting the power supply (9) to apply a predetermined voltage to the first electrical conductor (6); adjusting the power supply (9) to apply a predetermined voltage to the second electrical conductor (5); depending on the detected electrical parameter dependent on the ionization current (IC) and on the detected electrical parameter dependent on the emission current (EC), at least one state parameter representing the operating efficiency of the irradiation beam emission device (2) is derived.

The invention discloses a gallium nitride power device and a preparation method of the gallium nitride power device. The gallium nitride power device comprises a substrate; the buffer layer is arranged on one side of the substrate; the channel layer is arranged on the side, away from the substrate, of the buffer layer; the barrier layer is arranged on the side, away from the buffer layer, of the channel layer, and the barrier layer and the channel layer can generate two-dimensional electron gas; the gate structure, the source electrode and the drain electrode are arranged on the side, away from the channel layer, of the barrier layer at intervals, and the source electrode and the drain electrode are located on the two sides of the gate structure; wherein the barrier layer between the gate structure and the drain is provided with a first hollow part, the thickness of the first hollow part is the same as that of the barrier layer, and the first hollow part is etched between the gate and the drain of the barrier layer, so that the current leakage between the gate and the drain can be effectively inhibited, the virtual gate effect is relieved, and the reliability of the device is improved. Current collapse caused by 2DEG electrons captured by an AlGaN barrier layer and a surface defect trap and a channel hot electron effect is improved, and the voltage withstanding performance and the reliability of the device are improved.

Provided in the present disclosure is an erasure method for a flash memory cell. The flash memory cell comprises storage transistors and a gating transistor that are connected in series. The erasure method in the present disclosure comprises: applying erasure voltages to electrodes of a flash memory cell and gate electrodes of transistors, wherein the erasure voltage applied to a gate electrode of a storage transistor to be subjected to erasure is lower than a second power source voltage, such that the physical effect of channel hot-electron induced hot hole injection occurs, and thus hot holes in a channel are attracted into a storage medium layer for erasing. Compared with existing band-to-band hot-hole (BBHH) erasure methods, the erasure method for a flash memory cell in the present disclosure provides wider hole distribution and higher injection efficiency, such that the erasure method in the present disclosure achieves a higher erasure speed, a larger erasure window, reduced hot-carrier damage, a lower leakage current and improved endurance reliability.

The invention discloses a P-type gate enhanced device for an extreme environment and a preparation method of the P-type gate enhanced device. The P-type gate enhanced device comprises a substrate; the middle function layer is stacked on the substrate; the barrier layer is stacked on the side, away from the substrate, of the middle functional layer, and the source electrode makes contact with the surface of the barrier layer; the AlN spacer layer is stacked on one side, far away from the middle functional layer, of the barrier layer, and the drain electrode is in contact with the surface of the AlN spacer layer; the P-GaN cap layer is stacked on one side, far away from the barrier layer, of the AlN spacing layer, and the grid electrode is in contact with the surface of the P-GaN cap layer; the diamond film layer is stacked on the surface of the P-GaN cap layer and covers the source electrode, the drain electrode and the grid electrode. The AlN spacer layer is added between the P-GaN cap layer and the barrier layer, so that the Fowler-Nordheim tunneling probability of hot electrons is remarkably suppressed, the lattice damage chain reaction induced by electron bombardment is blocked, and the interface state density is reduced. And the diamond film layer is arranged, so that the long-term reliability of the device in an extreme environment can be effectively improved by virtue of ultrahigh thermal conductivity, extreme thermal stability and a high irradiation damage resistance threshold value of the diamond film layer.

The embodiment of the present disclosure provides a trench structure and a preparation method thereof, and a semiconductor device and a preparation method thereof, and relates to the technical field of semiconductors. The trench structure comprises: a trench located in a substrate; an oxide layer pattern located on the surface of the trench; a nitride layer pattern located on the oxide layer pattern and away from the surface of the trench; and a semiconductor film pattern located on the nitride layer pattern and away from the oxide layer pattern. The embodiment of the present disclosure is at least beneficial to improving hot electron induced punchthrough.