253 results about "Hot electrons" patented technology

The invention belongs to a integrated circuit reliability test technology field and especially relates to a multifunctional test circuit of integrated circuit stress degradation and a test method thereof. A core part of the test circuit takes an annular oscillator as a basis. Several auxiliary transistors, switch transistors and control terminals are added. By using the circuit and the method of the invention, a negative bias temperature instability, a positive bias temperature instability, hot hole injection or hot electron injection stress can be applied to pMOSFETs or nMOSFETs in a ring vibration inverter respectively; a ring oscillator is in a normal oscillation and stress oscillation state; the pMOSFETs or nMOSFETs of the inverter in the ring oscillator is in a measuring state of a charge pump. The degradation of the MOSFETs in the ring vibration inverter can be shown through changes of a ring oscillator oscillation frequency after the stress and can be shown through the changes of a CP current (Icpp or Icpn) of the pMOSFETs or nMOSFETs in the ring oscillator.

The invention discloses a plume neutralizer of a space electric thruster. The neutralizer comprises an ignition electrode, a top hole plate, a heater, a heat shielding cylinder, an emitting body and a support pipe; the emitting body is mounted in the support pipe; the top hole plate shields out of the emitting body, and is fixedly connected with the support pipe; the heater is mounted out of the support pipe opposite to the emitting body; a heating area covers the whole emitting body; the heater is wrapped with an insulation ceramic layer; the heat shielding cylinder covers the heater, and forms gaps with the heater and the insulation ceramic layer; the ignition electrode is mounted at the downstream of the top hole plate, and forms a gap with a small hole of the top hole plate; and a center hole of the ignition electrode is coaxial with the small hole of the top hole plate. The neutralizer generates a lot of electrons through a hot electron ionized gas discharge mode; continuously emitted electrons are high in density; after the gas discharge is stabilized, the self-heating can be performed to maintain discharge, so that the system power consumption is saved; the equivalent potential is low; the effective acceleration voltage of the thruster is higher; and the specific impulse of the thruster is high.

The invention discloses a polarization sensitive photoelectric detector based on the metal plasmon structure hot electron effect. The polarization sensitive photoelectric detector comprises an insulating substrate, a metal back gate electrode, an insulating isolation layer, a channel active layer, a drain electrode, a source electrode and a plasmon structure of which plasmon resonance is sensitive to polarized light. The material forbidden bandwidth of the channel active layer is greater than photon energy of incident light. The plasmon structure is a metal nanostructure. Detection of light polarization information is realized by using the characteristic of strong dependence for the incident light polarization state generated by the hot electrons of the plasmon structure. The polarization sensitive photoelectric detector has the following advantages that 1, detection of the light polarization information can be realized by using the plasmon structure without additional arrangement of optical elements (polarizer/polarization analyzer) so that miniaturization and integration of the device are facilitated; and 2, photocurrent can be amplified by applying bias voltage through the metal back gate electrode, and the metal back gate electrode structure and the metal nanometer plasmon structure are enabled to form a super surface structure to enhance light absorption so that the degree of photoelectric response can be enhanced.

A circuit for dynamically monitoring the operation of an integrated circuit under differing temperature, frequency, and voltage (including localized noise and droop), and for detecting early life wear-out mechanisms (e.g., NBTI, hot electrons).

A fast optical (with or without a photonic crystal) switch is fabricated/constructed, utilizing a phase transition material/Mott insulator, activated by either an electrical pulse (a voltage pulse or a current pulse) and/or a light pulse and/or pulses in terahertz (THz) frequency of a suitable field strength and/or hot electrons. The applications of such a fast optical switch for an on-demand optical add-drop subsystem, integrating with (a) a light slowing/light stopping component (based on metamaterials and/or nanoplasmonic structures) and (b) with or without a wavelength converter are also described.

The invention discloses a making method of an electrical absorption modulation tunneling injection type distributed feedback semiconductor laser, which comprises the following steps of: 1, growing an n-type indium phosphide buffer layer, a lower waveguide external limit layer, a lower waveguide internal limit layer, an indium phosphide tunneling barrier layer, a multiple quantum well active layer and an upper waveguide limit layer on an n-type indium phosphide substrate during the same epitaxy; 2, making a Bragg grating in a laser region, then epitaxially growing a p-type indium phosphide grating covering layer, an InGaAsP etching stopping layer, a p-type indium phosphide covering layer and a p+ InGaAs electrode contact layer largely; and 3, etching a ridge type optical waveguide on an epitaxial wafer, injecting with He ions to improve the resistance of an isolation region, and then passivating and flatting the surface and finally making a p-type and an n-type electrodes. The invention has the advantages of simple process and high reliability, eliminates the influence of hot electrons on the property of the laser, improves the characteristic temperature of the laser, and can realize a certain independent optimization on the laser and a modulator.

A method and apparatus for trimming a high-resolution digital-to-analog converter (DAC) utilizes floating-gate synapse transistors to trim the current sources in the DAC by providing a trimmable current source. Fowler-Nordheim electron tunneling and hot electron injection are the mechanisms used to vary the amount of charge on the floating gate. Since floating gate devices store charge essentially indefinitely, no continuous trimming mechanism is required, although one could be implemented if desired. By trimming the current sources with high accuracy, a DAC can be built with a much higher resolution and with smaller size than that provided by intrinsic device matching.

The invention provides an epitaxial growth method for improving luminous efficiency of an LED. According to the method, a layer of doped n-type AlGaN barrier layer is added in a growth GaN/InGaN quantum well barrier periodic structure, an Al component gradient structure is adopted, electrons in an n area can be blocked partially, the injection kinetic energy of the electrons can be reduced, hot electrons can be captured by a potential well easily and can easily generate recombination luminescence with electron holes in a later quantum well area, and the electron overflow effect is reduced. The Al component gradient structure is adopted by a later p-type AlGaN barrier layer, growth quality of materials can be improved, and compared with a former single component structure, the gradient structure can facilitate the injection effect of the electron holes and play the function of secondary blocking.

The invention discloses a detection method and structure for detecting trap states in gallium nitride base heterostructure. The detection method comprises the steps that the detection structure of trap states in the GaN base heterostructure is prepared; the trap states in the GaN base heterostructure is detected, conduction characteristics of a substrate and the sample surface are used for forming three-terminal ohmic contact on the sample surface and the substrate back, capture and ejection processes of hot electrons are studied by applying transverse and longitudinal electrical stress respectively; accordingly, whether the trap position in the sample is located on the GaN channel layer, or the GaN epitaxial layer, or the epitaxial layer is finally determined by changing the sample structure, and localization state information of the traps can be obtained. The method is simple, quick and effective, the trap states in the GaN base heterostructure can be determined, and the detection method and structure are good for further improvement of device reliability.

The invention provides an application of a UB2 film to a black cavity, belongs to the technical field of laser fusion engineering and specifically relates to the application of the UB2 film having black cavity scattering reduction and protection functions. The invention is to solve the problems that an existing uranium black cavity is complex in structure, an Au/B scattering reduction layer is poor in chemical stability and component proportion and distribution are difficult to regulate and control. The UB2 film is applied to the black cavity as a scattering reduction/protection layer instead of a black cavity Au/B scattering reduction layer and an Au protection layer. The advantages are that through application of the UB2 film to the black cavity, precise control of film components can be realized, black cavity mold release process difficulty is reduced, and laser plasma stimulated Brillouin scattering is suppressed effectively; and meanwhile, the UB2 film also has the functions of reducing M-band hot electron yield, improving laser-X ray conversion efficiency and protecting a uranium black cavity conversion layer. The UB2 film integrates functions of scattering reduction and protection, and effectively simplifies ignition black cavity and other high-performance and high-conversion-rate black cavity structures and preparation processes thereof.

Various methods of hot-electron imaging a workpiece are provided. In one aspect, a method of examining a workpiece is provided that includes directing a first photon at a photodetector at a first known time and stimulating a circuit device of the workpiece at a second known time to produce a condition in the circuit device conducive to photon emission. At least one photon emitted by the circuit device in response to the stimulation is detected. The first photon increases the quantum efficiency of the photodetector in detecting the at least one photon. The detection of the at least one photon relative to the first known time and the second known time is time correlated to temporally distinguish the first photon and the at least one photon and to temporally correlate the stimulation of the circuit device to the detection of the at least one photon.

Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be “unstuck” or “removed” and thus be made usable (i.e., able to be programmed) again.

A method permitting less energy consumption and efficient formation of high quality electrodes is provided. An electrode is formed as an electrodeposited film by irradiating the surface of an object to be treated, the surface at least permitting generation of charged particles when irradiated with a laser beam, with a fentosecond laser beam and metal-plating the surface of a substrate using hot electrons generated by this laser irradiation.

The present disclosure relates to a memory cell comprising a vertical selection gate extending in a trench made in a substrate, a floating gate extending above the substrate, and a horizontal control gate extending above the floating gate, wherein the floating gate also extends above a portion of the vertical selection gate over a non-zero overlap distance. Application mainly to the production of a split gate memory cell programmable by hot-electron injection.

Hole annealing methods are described after erasure of nitride storage memory cells for compensating trapped holes to minimize the holes from detrapping in order to reduce the amount of threshold voltage from drifting significantly higher. A soft hot electron program is used to selected nitride storage memory cells that have been detected to have a threshold voltage that is higher than a presetting threshold voltage (EV) minus a wordline delta X. The effect of the soft electron program neutralizes the excess holes introduced by erasure of nitride storage memory cells that decreases the amount of threshold voltage from drifting higher. In one embodiment, a hole annealing method describes a soft hot electron programming to nitride storage memory cells in a block of nitride memory array that have been determined to have a threshold voltage higher than the presetting threshold voltage minus the wordline delta X.

The invention provides an ion source of an injection device and an ion injection method. The ion source comprises an arc-starting chamber which is used for accommodating plasma, a lamp filament which is arranged on the side wall of the arc-starting chamber and is used for producing heat so as to enable the ion source gas input to the arc-starting chamber to be ionized as the plasma; a reflector electrode which is arranged on the side wall, opposite to the lamp filament, of the arc-starting chamber and is used for reflecting hot electron generated by the lamp filament; a slit which is arranged on the top of the arc-starting chamber and serves as the outlet of the plasma; a source gas inlet which is arranged on the side wall, between the reflector electrode and the lamp filament, of the arc-starting chamber, and is used for inputting the ion source gas; and a clean gas inlet which is arranged in the side wall, at the same side of the source gas inlet, of the arc-starting chamber and is used for inputting inertia clean gas. The service life of the ion source is prolonged.

The invention relates to a terahertz front-end integrated receiving device based on a bulk silicon MEMS (micro-electromechanical system) technical antenna, and the device is suitable for terahertz low-frequency stage and belongs to the technical field of terahertz. The device mainly comprises an antenna, a mixer chip, a base and a back panel, wherein the antenna comprises an H-face horn antenna based on a bulk silicon MEMS and a plane gradually changing type plantar slot antenna (ALTSA in short); the mixer chip is a superheterodyne detector and comprises a room temperature schottky diode mixer, a superconductivity tunnel junction mixer, and a hot electron bolometric resistance mixer; the external part of the base remains the position which is in physical match with the chip and an intermediate frequency terminal and the like; and the back panel also remains the space which is in physical match with the chip and the intermediate frequency terminal. According to the device, the antenna is processed through the bulk silicon MEMS technology; the processing precision of the terahertz device can be satisfied; and the device is convenient to manufacture and produce in mass, and is easy to assemble. Through the integral assembling method of the antenna, the mixer and a bias circuit, the success ratio of micro-packaging the components is improved, the integration level of the integral receiving device is improved; and the device has the advantages of small size, light weight and low cost.

The present invention relates to a memory cell structure of a flash memory and a method for fabricating the same and, more particularly, to a flash memory having circumventing floating gates and a method for fabricating the same. In the proposed memory cell, a floating gate and a tunneling oxide are etched to form an annular shape situated between a drain, a source, and two field oxides. An interpoly dielectric and a control gate cover in turn on the floating gate and on the surface of the substrate not covered by the floating gate by means of self-alignment. The present invention can not only achieve self-alignment to form the control gate and apply to high-integration memory cells with small areas, but also can effectively increase the high capacitance coupling ratio thereof to enhance the tunneling effect of hot electrons.