Ion source of injection device and ion injection method

An implantation device and ion implantation technology, which are applied in the directions of ion beam tubes, discharge tubes, electrical components, etc., can solve the problems of film shedding, shortened service life of ion source, short circuit of filament 103, etc., and achieve the effect of increasing service life.

Active Publication Date: 2014-06-25
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0005] When the above-mentioned ion source generates plasma, related by-products or impurity particles will be formed in the arc starting chamber 100, and will adhere to the inner surface of the arc starting chamber 100, so that the inner surface of the arc starting chamber 100 will form a layer of conductive Thin film, even filament 103 and reflector 102 also can for

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  • Ion source of injection device and ion injection method
  • Ion source of injection device and ion injection method
  • Ion source of injection device and ion injection method

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Embodiment Construction

[0033] As described in the background art, when the ion source gas passed into the arc chamber is ionized into plasma, the relevant by-products or impurity particles will form a conductive film on the side wall of the arc chamber, and the conductive film will Make the filament short circuit, thereby affecting the service life of the ion source.

[0034] For this reason, the embodiment of the present invention provides an ion source, the side wall of the arcing chamber of the ion source has a cleaning gas inlet, and the inert cleaning gas is introduced into the arcing chamber through the cleaning gas inlet. The cleaning gas has high stability, even if part or all of it is ionized into the first plasma, the chemical characteristics of the plasma are not active, so the inert cleaning gas and the first plasma formed by ionization will occupy the arc starting chamber Part of the space can isolate the inner surface of the arc starting chamber from the ionization of the ion source ga...

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Abstract

The invention provides an ion source of an injection device and an ion injection method. The ion source comprises an arc-starting chamber which is used for accommodating plasma, a lamp filament which is arranged on the side wall of the arc-starting chamber and is used for producing heat so as to enable the ion source gas input to the arc-starting chamber to be ionized as the plasma; a reflector electrode which is arranged on the side wall, opposite to the lamp filament, of the arc-starting chamber and is used for reflecting hot electron generated by the lamp filament; a slit which is arranged on the top of the arc-starting chamber and serves as the outlet of the plasma; a source gas inlet which is arranged on the side wall, between the reflector electrode and the lamp filament, of the arc-starting chamber, and is used for inputting the ion source gas; and a clean gas inlet which is arranged in the side wall, at the same side of the source gas inlet, of the arc-starting chamber and is used for inputting inertia clean gas. The service life of the ion source is prolonged.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an ion source of an implantation device and an ion implantation method. Background technique [0002] Ion implantation is a technique for selectively implanting impurity materials into semiconductor materials in semiconductor technology. The impurity material is ionized in the ionization chamber, and these ions are accelerated to form an ion beam with a set energy. The ion beam bombards the surface of the wafer and penetrates into the wafer to a depth related to the energy. [0003] Ion implanters typically convert a gaseous or solid impurity material into a plasma in the arc chamber, which is then drawn out of the chamber to form an ion beam that can be mass analyzed to eliminate unwanted ions species, and accelerated to the desired energy, and directed to the wafer surface. [0004] refer to figure 1 , figure 1 It is a schematic cross-sectional interface diagram o...

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Application Information

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IPC IPC(8): H01J37/08H01J27/08H01J37/317
CPCH01J2237/006H01J2237/082H01J37/08H01J27/08
Inventor 单易飞邬璐磊董春荣
Owner SEMICON MFG INT (SHANGHAI) CORP
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