The invention relates to the technical field of
solid-state
nanopore preparation, in particular to a
solid-state
nanopore preparation device based on a
dielectric breakdown method, which comprises a
hardware structure and a
software structure, the
hardware structure comprises a
program control voltage source, a digital
galvanometer, a sample to be processed, a reaction tank and a
microcontroller used for controlling the
program control voltage source and reading the current value of the
galvanometer, and the
microcontroller is connected to a computer through a
signal cable. According to the method, the process of preparing the
nanopore through
dielectric breakdown is completely carried out in a solution environment, and compared with a method for preparing the nanopore through an
ion beam or an
electron beam, the occupied area is small, the equipment price is low, and the
operation time is short; by means of a high-precision and high-stability program-controlled
voltage source, the voltages on the two sides of the nano-film are precisely controlled, and the
erosion rate of ions in a solution to the nano-film is precisely controlled; through a high-precision and high-stability digital
galvanometer, the magnitude of current passing through the nano-film is precisely measured, and the
dielectric breakdown process is monitored online in real time.