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Polarization sensitive photoelectric detector

A photodetector and polarization-sensitive technology, applied in photometry, circuits, electrical components, etc., using electric radiation detectors, can solve the problem of little polarization information detection, and achieve miniaturization and integration, enhanced light Effect of absorption and improvement of photoelectric responsivity

Inactive Publication Date: 2016-12-28
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are still very few related studies on the use of plasmonic structures to detect polarization information.

Method used

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Embodiment 1

[0026] In order to realize a polarization-sensitive photodetector suitable for polarization detection in the visible region, quartz is selected as the substrate, and an aluminum film back-gate electrode is prepared on the surface by magnetron sputtering; the upper surface of the back-gate electrode is evaporated by electron beam Method to prepare SiO 2 Insulating spacer layer; on the surface of the insulating spacer layer, use magnetron sputtering to prepare a ZnO thin film active layer with a thickness of about 100nm; then use a thermal evaporation coating process to prepare a gold thin film drain and source on the surface of the active layer; Between the drain electrodes and on the semiconductor active layer, the periodic metal grating plasmonic structure is prepared by electron beam lithography and lift-off process.

[0027]The linearly polarized light in the visible light region is incident on the periodic metal grating, and after exciting the plasmon resonance, it decays ...

Embodiment 2

[0029] In order to realize a polarization-sensitive photodetector suitable for polarization detection in the near-infrared region, quartz is selected as the substrate, and the back-gate electrode of gold film is prepared by thermal evaporation coating process; the method of magnetron sputtering is used on the upper surface of the back-gate electrode Preparation of SiO 2 Insulating spacer layer; on the surface of the insulating spacer layer, the Si active layer is prepared by plasma-enhanced chemical vapor deposition; after that, the gold thin film drain and source are prepared on the surface of the active layer by thermal evaporation coating; between the source and the drain 1. On the semiconductor active layer, the periodic metal grating plasmonic structure is prepared by electron beam lithography and lift-off process.

[0030] The linearly polarized light in the near-infrared region is incident on the periodic metal grating plasmon structure, and the plasmon resonance is exc...

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Abstract

The invention discloses a polarization sensitive photoelectric detector based on the metal plasmon structure hot electron effect. The polarization sensitive photoelectric detector comprises an insulating substrate, a metal back gate electrode, an insulating isolation layer, a channel active layer, a drain electrode, a source electrode and a plasmon structure of which plasmon resonance is sensitive to polarized light. The material forbidden bandwidth of the channel active layer is greater than photon energy of incident light. The plasmon structure is a metal nanostructure. Detection of light polarization information is realized by using the characteristic of strong dependence for the incident light polarization state generated by the hot electrons of the plasmon structure. The polarization sensitive photoelectric detector has the following advantages that 1, detection of the light polarization information can be realized by using the plasmon structure without additional arrangement of optical elements (polarizer / polarization analyzer) so that miniaturization and integration of the device are facilitated; and 2, photocurrent can be amplified by applying bias voltage through the metal back gate electrode, and the metal back gate electrode structure and the metal nanometer plasmon structure are enabled to form a super surface structure to enhance light absorption so that the degree of photoelectric response can be enhanced.

Description

technical field [0001] The invention relates to a polarization-sensitive photodetector based on the thermal electron effect of a metal plasmon structure, which is used for highly sensitive detection of the polarization characteristics of light. Background technique [0002] Polarization is one of the inherently important properties of light. Although it is widely used, it is still difficult to obtain its information. This is because most optical sensors are not sensitive to the polarization characteristics of light, and the polarization characteristics of light cannot be directly measured like light intensity, so obtaining the polarization characteristics of light requires polarization analysis of light waves through a polarizing device. The polarization information of the incident beam can only be deduced by measuring the light intensity related to the polarization information multiple times. The detection process is quite cumbersome, and there are many discrete systems, wh...

Claims

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Application Information

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IPC IPC(8): H01L31/101H01L31/18G01J1/42
CPCG01J1/42H01L31/101H01L31/1876Y02P70/50
Inventor 王琦龙翟雨生陈广甸李晓华
Owner SOUTHEAST UNIV
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