175 results about "Thermal electron" patented technology

The invention discloses a three-frequency band near-infrared absorber based on a semiconductor super-surface structure, and belongs to the field of metamaterials. The three-frequency band near-infrared absorber sequentially consists of a substrate, a metal film layer and a semiconductor super-surface structure layer from bottom to top, wherein the semiconductor super-surface structure layer consists of a semiconductor particle array and a semiconductor film layer. The three-frequency band near-infrared absorber based on the semiconductor super-surface structure has the advantages that by reasonably designing the geometric size and lattice cycle of the semiconductor super-surface structure layer, the electromagnetic wave which is transmitted into the structure surface is completely absorbed; the structure is simple, the near-infrared band absorbing is realized, and three absorbing peaks are provided; the electromagnetic wave absorbing power is made of the semiconductor material, so that the limitation of only production of single resonance absorbing peak by the single size of the traditional metal resonance unit is overcome, and the absorber is applied into the fields of photoelectrical detection, photoelectrical conversion, production and collection of photo-induced electrons and thermal electrons, absorbing of electromagnetic energy, and the like.

Provided is a tungsten electrode material which uses a material to replace thorium oxide so as to improve the electrode service life as compared to the conventional technique. The tungsten electrode material has a tungsten base and oxide particles dispersed in the tungsten base. The oxide particles are prepared as an oxide solid solution containing in a solid solved state: a Zr oxide and/or a Hf oxide and an oxide of at least one rare earth selected from a group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu.

An electron emission material includes an electron emission material main body, a base metal layer disposed on the electron emission material main body, and a thermal electron emission layer disposed on the base metal layer.

A gun arrangement configured for generating a primary electron beam for a wafer imaging system is described. The arrangement includes a controller configured for switching between a normal operation and a cleaning operation, a field emitter having an emitter tip adapted for providing electrons and emitting an electron beam along an optical axis, an extractor electrode adapted for extracting the electron beam from the emitter tip electrode, a suppressor electrode, and at least one auxiliary emitter electrode arranged radially outside the suppressor electrode, and provided as a thermal electron emitter for thermally emitting electrons towards the optical axis.

The invention provides a gallium oxide ultraviolet detector based on surface plasmon and a preparation method and application thereof. The gallium oxide ultraviolet detector comprises a substrate, a gallium oxide-metal nanosphere composite active layer on the surface of the substrate, and an electrode disposed on the surface of the active layer, wherein the gallium oxide-metal nanosphere compositeactive layer comprises a gallium oxide film layer and metal nanospheres embedded in the gallium oxide film layer, wherein the metal is selected from one or more of a group including Ga, Al, Mg, and Pt. When the photoelectric detector based on the gallium oxide-metal nanosphere composite film is irradiated by solar-blind ultraviolet light, the metal nanospheres generate a plasmon resonance effectso that the metal nanospheres have an enhanced surface electric field and an increased scattering cross section, and generate energy and thermal electron transfer with a Ga2O3 material, thereby greatly enhancing the solar-blind light detection capability of the gallium oxide-based detector and improving the response sensitivity of the detector.

A thermal electron emission source includes a first electrode, a second electrode insulated from the first electrode, a carbon nanotube string electrically connected to and in contact with the first electrode and the second electrode, and a number of electron emission particles. The carbon nanotube string is composed of a number of closely packed carbon nanotube bundles, and each of the carbon nanotube bundles includes a number of carbon nanotubes. The electron emission particles are uniformly dispersed in the carbon nanotube string and are coated on the surfaces of the carbon nanotubes. A method for making the thermal electron emission source is also provided.

An electrical field is applied through an extreme ultraviolet (EUV) photoresist layer along a direction perpendicular to an interface between the EUV photoresist layer and an underlying layer. Secondary electrons and thermal electrons are accelerated along the direction of the electrical field, and travel with directionality before interacting with the photoresist material for a chemical reaction. The directionality increases the efficiency of electron photoacid capture, reducing the required EUV dose for exposure. Furthermore, this directionality reduces lateral diffusion of the secondary and thermal electrons, and thereby reduces blurring of the image and improves the image resolution of feature edges formed in the EUV photoresist layer. The electrical field may be generated by applying a direct current (DC) and/or alternating current (AC) bias voltage across an electrostatic chuck and a conductive plate placed over the EUV photoresist layer with a hole for passing the EUV radiation through.

This ion source includes a chamber having an internal wall surface and an external wall surface, and also includes a cathode, which is provided to be insulated from the chamber, capable of emitting thermal electrons into the chamber, and has a cathode cap protruding into the chamber from an external side of an opening part which is formed to pass through from the external wall surface to the internal wall surface of the chamber and a filament disposed inside the cathode cap, the cathode cap and/or the filament being an alloy containing tungsten (W) as a major component and a predetermined metal element as a minor component.

An ion generator is provided with: an arc chamber that is at least partially made up of a material containing carbon; a thermal electron emitter that emits thermal electrons into the arc chamber; and a gas introducer that introduces a source gas and a compound gas into the arc chamber. The source gas to be introduced into the arc chamber contains a halide gas, and the compound gas to be introduced into the arc chamber contains a compound having carbon atoms and hydrogen atoms.

An ion implanter includes a sample stage for setting a sample having a main surface, an ion generating section configured to generate a plurality of ions, the ion generating section including a container into which an ion source gas is introduced and a filament for emitting thermal electrons provided in the container, an implanting section configured to implants an ion beam containing the plurality of ions in the main surface of the sample, and a control section configured to control a position of the sample or a spatial distribution of electrons emitted from the filament so that a direction of eccentricity of a center of gravity of the ion beam coincides with a direction of a normal line of the main surface.

Provided are an apparatus for normal pressure plasma ignition and a method for normal pressure plasma ignition using the same. The apparatus for normal pressure plasma ignition of the present invention comprises a wave guide tube wherein microwaves are applied, a dielectric tube that penetrates said wave guide tube and introduces a reactant gas, and an ignition apparatus for normal pressure plasma wherein microwaves are applied in said dielectric tube to turn said reactant gas into plasma, wherein said ignition apparatus penetrates said dielectric tube and includes an ignition rod that emits thermal electrons as said microwaves are applied in said dielectric tube. The apparatus for normal pressure plasma ignition according to the present invention enables ignition to be accomplished without power, so that the problems with the prior art that requires high voltage (excessive power, stability issues) may be avoided at the same time. In addition, the normal pressure plasma ignition apparatus according to the present invention enables movement of the ignition rod inside and outside its dielectric tube so that physical damage to the ignition apparatus due to plasma heat may be prevented, and also affords the effect that the scope of metallic materials used in the ignition apparatus is significantly wider than that of the prior art.

A thermal electron emission backlight device comprises: a first substrate and a second substrate disposed in parallel and separated by a predetermined distance from each other; a first anode electrode and a second anode electrode facing the first anode electrode, the first and second anode electrodes being formed on inner surfaces of the first substrate and the second substrate, respectively; cathode electrodes disposed at predetermined intervals and in parallel with each other between the first substrate and the second substrate; a phosphor layer formed on the second anode electrode; and a plurality of spacers disposed between the first substrate and the second substrate so as to maintain the predetermined distance therebetween. When a predetermined voltage is applied to the cathode electrodes, thermal electrons are emitted from the cathode electrodes.

A thermoelectric device includes a thermally conductive first plate and at least one thermoelectric sub-assembly comprises a thermally conductive second plate and a plurality of thermoelectric elements in a region between the first plate and the second plate. The at least one thermoelectric sub-assembly further includes a first material along a first portion of a perimeter of the region and having a first stiffness and a second material along a second portion of the perimeter of the region and having a second stiffness less than the first stiffness.

A plasma generator includes: an arc chamber having a plasma generation region in which plasma is generated in the inside thereof; a magnetic field generator configured to apply a magnetic field to the plasma generation region; and a cathode configured to extend in an axial direction along an applying direction of the magnetic field applied to the plasma generation region and provided with a cathode cap that emits thermal electrons at a front end thereof. The cathode cap protrudes toward the inside of the arc chamber in the axial direction and has a shape of which a width in the radial direction perpendicular to the axial direction becomes smaller toward the inside of the arc chamber.

Provided is a sputtering apparatus which suppresses entry of thermal electrons into a work and does not cause problems such as work deformation due to heat, even at the time of forming a film on materials, such as plastic, having a low heat resistance. The apparatus is provided with a target and a carousel-type work holder arranged to face the target with a rotating shaft, in a vacuum chamber. The carousel-type work holder has a work holder supporting section and a plurality of work holding sections. The work holding section is arranged at the outer circumfernce of the work holder supporting section. The carousel-type work holder and/or the work holding section is rotatably arranged by a shaft arranged within a surface vertical to a surface connecting the target and the rotating shaft of the carousel-type work holder. Inside the carousel-type work holder, a thermal electron capturing member is arranged.

The invention relates to a method for enhancing the performance of an ECR (Electron Cyclotron Resonance) plasma source, and belongs to the application field of a low-temperature plasma source. The principle of the invention lies in that the original source of space electrons is a small quantity of free electrons in a resonance region of the existing ECR, electrons generated by gas ionization are source of the electrons when plasma discharge is formed, the electron density is limited when equilibrium is achieved, and the improvement of plasma parameters is restricted. On the basis of the existing ECR plasma source, a method of injecting electrons into the resonance region space in a compulsive and active manner is adopted. On the basis of the existing electron source, a lot of thermal electrons are generated by using a thermionic cathode, and the thermal electrons enter the resonance space under the control of an electric field passing through the resonance region, so that the electrondensity of the resonance region is greatly improved. Since the electron density of the resonance region is greatly improved, the ECR ionization efficiency is further enhanced, and the performance indexes such as the beam density of the ECR plasma source are improved.