65results about How to "Inhibit injection" patented technology

The embodiment of the invention discloses a band-gap reference circuit, a reference voltage source and a reference voltage generation method, and the circuit comprises a current module, a differential input module, a limiting module, a feedback module and a voltage division module, the differential input module responds to a first voltage signal and a second voltage signal of the voltage division module to generate a first conduction current and a second conduction current respectively, and then outputs a first output current and a second output current respectively; and the limiting module responds to the first output current and the second output current, and outputs a driving signal to control the feedback module to adjust the first voltage signal and the second voltage signal, so that the first output current is equal to the second output current, and the differential input module outputs the reference voltage with the zero temperature coefficient. The limiting module comprises a matching resistor or a low-transconductance switch tube so as to reduce the offset voltage. The matching resistor or the low-transconductance switch tube is arranged in the limiting module, so that the offset voltage of the limiting module is reduced, and the accuracy of the reference voltage is improved.

The invention belongs to the field of preparation of insulating materials, and particularly relates to a peroxide crosslinked polyethylene insulating material for a 500kV ultrahigh-voltage direct-current cable and a preparation method of the peroxide crosslinked polyethylene insulating material. The preparation method of the peroxide cross-linked polyethylene insulation material comprises the following preparation steps: adding a low-density polyethylene base material into a reciprocating mixer for preliminary melting, adding hindered phenol antioxidant modified silicon dioxide for uniform mixing, finally adding dicumyl peroxide, and carrying out heat preservation and absorption at 70-110 DEG C for 10-12 hours, so as to obtain the peroxide cross-linked polyethylene insulation material. The peroxide crosslinked polyethylene insulation material is obtained. The hindered phenol antioxidant modified silicon dioxide improves the direct current breakdown strength of the polyethylene insulating material, so that the peroxide crosslinked polyethylene insulating material has excellent performance.

The invention relates to the technical field of communication data inspection, solves the technical problem of lack of safety in the data transmission and processing process in the traditional technology, and particularly relates to a data consistency inspection method and system for intelligent ship sailing credible decision of an inland ship. The method specifically comprises five parts: zero-trust identity verification and access control, data encryption and communication security, time synchronization and verification mechanism, redundancy check and fusion of multi-source data, and multi-ship trust degree dynamic evaluation based on a consistency check result. According to the invention, each data interaction between the ship and the shore base, between the ships and between the ship and the environment is subjected to identity verification and safety examination. And in combination with time synchronization, multi-source data fusion, redundancy check, anomaly detection and the like, the data consistency and credibility of the navigation decision are ensured, and the navigation safety of the inland ship and the anti-attack ability of the system are remarkably improved.

The invention discloses a concentric umbilical cable for an unmanned aerial vehicle and a preparation method thereof, and relates to the technical field of umbilical cables for unmanned aerial vehicles. The cable insulation layer is optimized, the overall weight of the cable is reduced, and the mechanical performance of the cable is enhanced. In the process, a macromolecular voltage stabilizer is innovatively adopted, and the problem that a traditional micromolecular voltage stabilizer is easy to separate out is effectively avoided. In order to improve the compatibility of the macromolecular voltage stabilizer in polypropylene, the macromolecular voltage stabilizer is further subjected to grafting treatment through allyl amine.

The invention relates to the technical field of semiconductor laser manufacturing. The invention particularly relates to a semiconductor laser chip structure and a manufacturing method thereof. The semiconductor laser chip structure provided by the invention comprises a laser substrate and a heavily doped table, and the heavily doped table is arranged on the surface of one side, opposite to a substrate layer, of an upper limiting layer of the laser substrate and comprises a first ohmic contact layer, a second ohmic contact layer and a resistance control layer; the heavily doped table is provided with a current injection region, and is provided with a first current injection window and a second current injection window; a current path from the first current injection window to the substrate layer does not pass through the resistance control layer, and a current path from the second current injection window to the substrate layer passes through the resistance control layer; the second current injection window is at least arranged on one side of the current injection region close to the rear cavity surface. According to the semiconductor laser chip structure provided by the invention, carrier injection of the front cavity surface and the rear cavity surface can be effectively balanced, so that local failure of the front cavity surface is avoided, and the device efficiency can be improved.

The invention discloses a shield gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device and a preparation method thereof. The device comprises a substrate; a semiconductor body; the semiconductor body comprises a drift region, a body region and a first active region; first grooves are formed in the two sides of the semiconductor body in the thickness direction perpendicular to the substrate; a source structure; the source structure is in contact with the first active region; a barrier dielectric layer, a shield gate dielectric layer and a shield gate; the upper surface of the barrier dielectric layer is flush with the upper surface of the isolation dielectric layer in the thickness direction of the substrate; and a control gate structure and a drain. The shield gate MOSFET device can effectively prevent hot carriers from being injected into the shield gate dielectric layer under the action of an electric field between the shield gate and the drift region when the shield gate MOSFET device is reversely broken down.

The invention relates to the field of transformer grounding devices, in particular to an oil-immersed transformer grounding device and a using method thereof.The oil-immersed transformer grounding device comprises a base, supporting rods are fixedly connected to the periphery of the top of the base, and a transformer body is fixedly connected between the tops of the four supporting rods; an adjusting rod is hinged to the middle position of the bottom of the transformer body, an accumulated force adjusting mechanism is movably connected between the bottom of the adjusting rod and the top of the base, water storage tanks are fixedly connected to the two sides of the top of the base, and a drainage mechanism is movably connected between the bottoms of the water storage tanks and the top of the base. The grounding device of the oil-immersed transformer is composed of an accumulated force adjusting mechanism and a drainage mechanism. When vibration generated in the using process of the transformer body can drive the force storage adjusting mechanism to operate, the force storage adjusting mechanism is matched with the drainage mechanism in a staged mode to automatically inject saline water into soil at the bottom of the base, it is avoided that a user injects the saline water regularly, and using convenience is improved.

The invention belongs to the related technical field of microelectronic devices, and discloses a ferroelectric vertical transistor based on an oxide semiconductor and a preparation method thereof, and the ferroelectric vertical transistor comprises a substrate, a gate metal electrode, a gate ferroelectric layer, a gate insulating dielectric layer, an island-shaped source electrode, the oxide semiconductor, a source electrode contact electrode and a top drain electrode. According to the invention, the hafnium oxide-based ferroelectric material is used as the gate ferroelectric material, so that the information writing and reading can be realized, the regulation effect of the gate voltage on the channel is amplified, the ratio of the gate capacitance to the channel capacitance is reduced, and the working voltage of the transistor is reduced, thereby reducing the power consumption of the ferroelectric vertical transistor. Besides, a gate insulating dielectric layer is prepared on the gate ferroelectric film to promote the formation of a ferroelectric phase, and the introduction of the insulating dielectric layer can inhibit the injection of charges, so that the polarization state of the hafnium oxide-based ferroelectric material is adjusted, and the overall performance of the ferroelectric transistor is improved.

The invention provides a high-k gate dielectric composite material, a preparation method thereof and a beta-Ga2O3 MOS (Metal Oxide Semiconductor) power device. The composite material comprises a beta-Ga2O3 substrate; the SiO2 interface buffer layer is formed on at least one surface of the beta-Ga2O3 substrate; the Al2O3 transition layer is formed on the surface of the SiO2 interface buffer layer; the AlON interface layer is formed on the surface of the Al2O3 transition layer; and the HfO2 high-k main dielectric layer is formed on the surface of the AlON interface layer. Experimental results show that the composite material provided by the invention has a dielectric constant of 15-30, a forbidden bandwidth of greater than 5eV, an interface state density of less than 1 * 10 < 12 > cm <-2 > eV <-1 > and a breakdown field strength of 7MV / cm-15MV / cm, can effectively improve the interface characteristics of a beta-Ga2O3 MOS power device when being used for the beta-Ga2O3 MOS power device, improves the reliability of a gate medium, and is suitable for being applied to high-voltage and high-temperature power devices.

The invention provides a laterally diffused metal oxide semiconductor device and a manufacturing method thereof. The method comprises the following steps: forming a gate material layer and a silicon nitride mask layer on a substrate; etching the gate material layer by taking the silicon nitride mask layer as a mask to form a gate; forming a patterned photoresist layer with a first opening; performing high-energy ion implantation by taking the patterned photoresist layer and the silicon nitride mask layer as masks to form a first body region; trimming the patterned photoresist layer to form a second opening; performing low-energy ion implantation by taking the patterned photoresist layer and the silicon nitride mask layer as masks to form a second body region; and removing the patterned photoresist layer and the silicon nitride mask layer. According to the method, the silicon nitride mask layer is not removed after the grid electrode is formed by taking the silicon nitride mask layer as the mask, and the ion implantation is carried out by taking the patterned photoresist layer and the silicon nitride mask layer as the mask, so that ions can be prevented from directly penetrating through the patterned photoresist layer to enter the grid electrode during high-energy ion implantation, and the resistance of the grid electrode is prevented from being influenced.

A roof rail (1) is provided with a base (2) made of a resin and a coating film (10) having a metallic luster and covering the surface of the base (2), the coating film (10) comprising a primer film (3) attached to the surface of the base (2) and a metal-containing coating film (4) covering the surface of the base (2) with the primer film (3) interposed therebetween, and the film thickness of the metal-containing coating film (4) is greater than the film thickness of the primer film (3).

The invention discloses a shielding material for a thermoplastic polyvinyl direct-current power cable as well as a preparation method and application of the shielding material, and relates to the technical field of composite materials. The invention relates to a shielding material for a thermoplastic polyvinyl direct-current power cable. The shielding material comprises the following components in parts by weight: 70-74 parts of polyethylene resin; 22 to 28 parts of filler; 2-6 parts of an auxiliary agent; the filler comprises first conductive carbon black and second conductive carbon black, the particle size of the first conductive carbon black is not less than 30nm, and the particle size of the second conductive carbon black is not more than 15nm. The shielding material is adaptive to an existing thermoplastic polyethylene insulating material, the electric field distortion degree of an insulating / shielding interface is effectively reduced, charge injection into an insulating layer is inhibited, the electric field distortion degree in the insulating layer is effectively reduced, and therefore the electrical characteristics of the insulating material are improved.

The invention relates to the technical field of hydrogen storage tank pressure relief alarm, and discloses a pressure relief alarm device for a hydrogen tank and an alarm method thereof.The pressure relief alarm device comprises the hydrogen storage tank, a plurality of gas injection pipes are communicated with the periphery of the top of the hydrogen storage tank, an annular adsorption plate is fixedly connected to the bottom of the inner wall of the hydrogen storage tank, and the pressure relief alarm device further comprises a pressure relief alarm mechanism; the pressure relief alarm mechanism comprises a cylindrical shell fixedly connected to the center of the top of the hydrogen storage tank, a powdery alloy material is placed in the hydrogen storage tank, the powdery alloy material is attached to the outer portion of an annular adsorption plate, hydrogen is injected into the hydrogen storage tank through a gas injection pipe, and when the hydrogen storage tank is filled with hydrogen, the annular adsorption plate is closed; hydrogen extrudes a pressure relief plate, so that the pressure relief plate moves upwards, the pressure relief plate drives a vertical column to move upwards, the vertical column drives a flexible annular plate to move upwards, the flexible annular plate slides in a circular groove, the internal area of a semicircular shell is pressurized, and a pressure sensor senses the increased pressure, so that an alarm is given.

This invention relates to a method for fabricating a perovskite / silicon tandem solar cell. The method involves stacking perovskite cells in series on top of silicon cells via an intermediate connecting structure. Based on the current of the perovskite cells or the current of the silicon cells without backscattered light, the current of either the silicon cells without backscattered light or the perovskite cells is adjusted so that the current of the perovskite cells is greater than the current of the silicon cells without backscattered light. The objective of this invention is to provide a perovskite / silicon tandem solar cell and its fabrication method. By adjusting the currents of the perovskite and silicon cells, the current of the perovskite cells is made higher than the current of the silicon cells, thereby utilizing the efficiency gain of bifacial power generation from the bottom cells to improve the conversion efficiency and actual power generation of the tandem solar cell.

The embodiment of the present application discloses a band gap reference circuit, a reference voltage source and a reference voltage generation method, the circuit comprising a current module, a differential input module, a limiting module, a feedback module and a voltage division module, the differential input module generating a first conduction current and a second conduction current in response to a first voltage signal and a second voltage signal of the voltage division module respectively, and then outputting a first output current and a second output current respectively; the limiting module outputting a driving signal to control the feedback module to adjust the first voltage signal and the second voltage signal in response to the first output current and the second output current, so that the first output current and the second output current are equal, and the differential input module outputs a reference voltage with zero temperature coefficient. The limiting module comprises a matching resistor or a low-transconductance switch tube to reduce the offset voltage. The present application sets a matching resistor or a low-transconductance switch tube in the limiting module to reduce the offset voltage of the limiting module and improve the accuracy of the reference voltage.

The invention provides a bidirectional detection protection method and system for industrial control instructions and data transmitted in the same channel. The method comprises the following steps: acquiring network communication flow between an upper computer and a numerical control system; separating a control instruction or service data from the network communication flow; determining the flow direction of the control instruction or the service data; if the flow direction is uplink, detecting the control instruction by adopting a first external intrusion detection strategy aiming at the control instruction, and detecting the service data by adopting a second external intrusion detection strategy aiming at the service data; if the flow direction is downlink, detecting the control instruction by adopting a first internal anomaly detection strategy aiming at the control instruction, and detecting the service data by adopting a second internal anomaly detection strategy aiming at the service data; and executing a corresponding response strategy according to a detection result. The accuracy and the real-time performance of detection are remarkably improved, and the system resource overhead and the false alarm rate are reduced.

The present invention discloses a vehicle queue control method based on encrypted transmission of state information in a zero-trust environment, including: each following vehicle in the vehicle queue receives the state information sent by its preceding vehicle; wherein the state information is encrypted and decrypted and verified by digital envelope technology when the vehicles send and receive the state information; each following vehicle in the vehicle queue performs the following operations: using a model prediction algorithm to calculate and predict the state information of the current vehicle at Np moments in the future; using a state prediction model to calculate the expected state information of the current vehicle at Np moments in the future; using an MPC objective function to calculate and generate the optimal control input of the current vehicle; and finally controlling its operating state based on the optimal control input of the current vehicle. The present invention introduces symmetric encryption algorithms and asymmetric encryption algorithms under a zero-trust framework, and at the same time predicts the state and expected state at future moments through the state information of the vehicle and its preceding vehicle to generate control inputs that meet the vehicle queue control requirements.

The utility model relates to the technical field of anti-fake bottle caps, and particularly discloses an anti-fake bottle cap with an anti-pulling function. Comprising an outer cover, an inner cover, a lower pipe, a main body and an inner plug, wherein the inner cover is sleeved in the outer cover and is clamped with the outer cover; the lower pipe is positioned below the outer cover and is respectively clamped with the outer cover and the inner cover; the main body is sleeved in the lower pipe, and one end of the main body penetrates through the lower pipe and is connected with the inner cover; the main body is sleeved on the outer side of the bottleneck; and an anti-counterfeiting sealing piece clamped with the top of the outer cover is arranged on the inner cover. According to the utility model, the clamping part is matched with the anti-counterfeiting sealing piece of the inner cover, and the opening teeth of the outer cover are matched with the snapping barrier strip of the lower pipe, so that when a pulling force is applied to the outer cover, the anti-counterfeiting sealing piece is separated from the inner cover, and the snapping barrier strip is snapped by the opening teeth; therefore, the separated anti-counterfeiting sealing element and the inner cover cannot be recovered, and the snapping barrier strip is damaged; the obvious anti-counterfeiting effect is achieved after pulling, and it is avoided that adulterated wine is injected into the bottle by separating the bottle cap from the bottle neck through pulling; the structure is simple and practicability is high.

The present application relates to computer bottom layer data processing and distributed feature operation technical field, specifically for a kind of multi-source gradient data processing system based on manifold reconstruction;Including: data and knowledge acquisition module, for obtaining the local model gradient update vector uploaded by multi-source data end, knowledge base contains gradient deviation typical mode feature;Ideal manifold reconstruction and simulation module, for generating gradient drift template and gradient anomaly template;Double-track difference feature extraction module, for calculating the theoretical drift deviation and theoretical anomaly deviation between gradient drift template, gradient anomaly template and quantization feature matrix respectively;Situation coupling decision module, for executing the trusted writing of multi-source gradient data or the release or isolated storage instruction of abnormal data rejection;The present application effectively improves the robustness of bottom layer multi-source feature data processing and the reliability of system memory update.

The invention provides a thin film transistor, a manufacturing method thereof and an array substrate. The thin film transistor comprises a substrate; the first electrode is arranged on one side of the substrate, and the first insulating layer is arranged on the side, away from the substrate, of the first part; the second electrode is arranged on the side, away from the substrate, of the first insulating layer; at least part of the carrier isolation layer is arranged on the side, away from the substrate, of the second electrode; the semiconductor layer is arranged on the side, away from the substrate, of the first area and covers the second side wall and at least part of the third area; the carrier concentration of the carrier isolation layer is smaller than that of the semiconductor layer. The carrier isolation layer is arranged between the second electrode and the semiconductor layer and covers part of the first electrode, and the carrier concentration of the carrier isolation layer is lower than that of the semiconductor layer, so that carrier injection from the first electrode and the second electrode to the semiconductor layer is effectively inhibited, and the reliability of the device is improved. Therefore, the threshold voltage stability of the thin film transistor is improved.

The utility model discloses a self-pressure grouting and leaking stoppage device, and belongs to the technical field of grouting and leaking stoppage equipment. The self-pressure grouting leaking stoppage device comprises a container filled with grouting materials, the pressure in the container is larger than the atmospheric pressure, and a connecting piece is arranged at the discharging end of the container. And the connecting piece is connected with the grouting nail through a pipeline. According to the utility model, the grouting material can be placed in the container, and then the compressed air is utilized to discharge the grouting material for grouting and leaking stoppage, so that the portable leaking stoppage device is suitable for small-area leaking stoppage, and the whole process does not need a pump to participate in work, so that the portable use effect can be achieved; therefore, the problems that in the prior art, traditional grouting leaking stoppage equipment is not portable and not suitable for small-area leaking stoppage are solved.

The utility model discloses a self-pressure grouting and leaking stoppage device, and belongs to the technical field of grouting and leaking stoppage equipment. The self-pressure grouting leaking stoppage device comprises a container for discharging grouting materials outwards through compressed air. A connecting piece is arranged at the discharging end of the container; and the connecting piece is connected with the grouting nail through a pipeline. The container is a first tank body containing compressed air and grouting materials. Or, the second tank body is used for containing compressed air, and the air tank is used for containing the grouting material; the second tank body is connected with the gas tank through a communicating piece; according to the utility model, the grouting material can be placed in the container, and then the compressed air is utilized to discharge the grouting material for grouting and leaking stoppage, so that the portable leaking stoppage device is suitable for small-area leaking stoppage, and the whole process does not need a pump to participate in work, so that the portable use effect can be achieved; therefore, the problems that in the prior art, traditional grouting leaking stoppage equipment is not portable and not suitable for small-area leaking stoppage are solved.

The invention discloses a multi-layer structure polyetherimide energy storage composite dielectric film and application thereof, and belongs to the technical field of energy storage dielectric materials and preparation thereof. The invention aims to solve the problems of large high-temperature dielectric loss and poor energy storage performance of the existing polyetherimide-based energy storage composite medium. The multi-layer structure polyetherimide energy storage composite dielectric film is of a three-layer structure and is composed of a scattering electron layer and a capturing electron layer. According to one structure, two surface layers are scattering electron layers, and a middle layer is a capturing electron layer; in the other structure, two surface layers are capture electron layers, and the middle layer is a scattering electron layer; the scattering electron layer is formed by compounding polyetherimide and 4-N, N-dimethylamino phenylboronic acid; and the electron capture layer is formed by compounding polyetherimide and tetrafluoro (4-cyano) quinoline dimethane. The preparation method belongs to an all-organic system, is suitable for large-scale production, and provides a new research and development thought for large-scale production of high-temperature and high-field energy storage all-organic composite films used for a long time.

The invention discloses a Bluetooth data encryption method based on a 32-bit chip, and the method comprises the following steps: S1, determining an encryption and decryption key through a Bluetooth end and an external opposite end, encrypting the encryption and decryption key through employing a first safety storage key, and obtaining a first ciphertext, and storing the first ciphertext; s2, when the Bluetooth end receives the second ciphertext and transmits the second ciphertext to the MCU, the MCU reads the first ciphertext; s3, decrypting the first ciphertext through the first secure storage key to obtain an encryption and decryption key, decrypting the second ciphertext by using the encryption and decryption key to obtain a plaintext, and adding one to the use count of the first secure storage key; and S4, destroying the first secure storage key reaching the upper limit of the number of times of use, and generating a second secure storage key to encrypt the plaintext and the encryption and decryption key. According to the invention, the communication between the external Bluetooth module and the MCU and the processing security of the MCU after receiving the data can be effectively ensured, the key is prevented from being easily acquired, and the reverse analysis attack aiming at the embedded equipment can be effectively prevented.

The utility model relates to a manual pouring device, belongs to the field of metal casting machining, and particularly relates to a manual pouring device for metal castings, which comprises a base, a first module fixedly mounted on the wall surface of the top end of the base, and a second module mounted on the wall surface of the top end of the base in a sliding manner. The pouring pipe is arranged at the bottom end of the outer side wall of the first module, exhaust holes are formed in the top end wall face of the second module, a supporting plate is fixedly installed on the top end wall face of the base, a protective cover is arranged on the right side of the supporting plate, and a motor is fixedly installed on the inner side wall of the protective cover. The motor is started to drive the second module and the first module to be closed, molten metal can flow into the cavity between the first module and the second module from the pouring pipe at the bottom end of the pouring cylinder, gas in the cavity and gas generated during pouring can be exhausted from the exhaust holes, air holes of a casting are reduced, the quality of the casting is improved, and the production cost is reduced. The problem that an existing manual pouring device for the metal casting is poor in casting quality is solved.

The invention relates to the technical field of calcium hydroxide production, and particularly discloses a device and method for producing calcium hydroxide from solid waste, the device comprises a stirring barrel, a feeding port and a discharging port, the feeding port is connected to one side of the stirring barrel, calcium oxide is conveyed into the stirring barrel through the feeding port, and the discharging port is connected to the other side of the stirring barrel; the discharging port is used for conveying calcium hydroxide after production is completed out of the stirring barrel for the next production step, the weight monitoring assembly is connected into the stirring barrel, and when the feeding port conveys the raw material calcium oxide into the stirring barrel, the weight monitoring assembly can monitor the weight of the raw material in real time; the control assembly is connected to one side of the stirring barrel, the control assembly is used for storing water and controlling the water delivery amount, the water injection amount is controlled in real time through the raw materials with different volumes and weights, and then excessive water is prevented from being injected into the stirring barrel; and product sintering and performance reduction caused by too high temperature of calcium hydroxide are prevented.

The invention provides a semiconductor device which comprises an N + substrate, an N-epitaxial layer and a plurality of gate trenches, the N-epitaxial layer comprises a plurality of P + buried layers and a plurality of first N + regions, the first N + regions are alternately clamped in the middle of the N-epitaxial layer, the thickness of each first N + region is larger than that of each P + buried layer, and the thickness of each first N + region is larger than that of each P + buried layer. The two sides, close to the N + substrate and away from the N + substrate, of the first N + region protrude out of the P + buried layer; the plurality of first P + regions and the plurality of second N + regions are alternately arranged on one side, far away from the N + substrate, of the P well region; an opening of each gate trench penetrates through one side, far away from the N + substrate, of the P well region and is located on the N-epitaxial layer between the P well region and the N + substrate, and each second N + region is arranged on the outer side of the corresponding gate trench in a surrounding manner. According to the invention, the gate oxide is protected, the JFET region introduced into the device by the P-type region is reduced, and the on-resistance of the device is reduced.

The utility model discloses a nutrition support device for anastomotic fistula after esophageal surgery, which belongs to the technical field of medical instruments and comprises a catheter body, a divergence portion, a guide wire, an adjusting component and a moving structure. A nutrition injection channel is formed in the top end of the catheter body, a catheter outlet is formed in the bottom end of the catheter body, side holes are formed in the outer side wall of the catheter, and a front balloon is arranged at the bottom end of the outer side wall of the catheter body. A guide pipe inlet, a front ball inflation inlet and a rear ball inflation inlet are formed in the top end of the branch part, and a front ball inflation valve is arranged at the top end of the front ball inflation inlet. The guide wire is arranged in an inner cavity of the catheter body. A rear ball inflation valve is arranged at the top end of the adjusting assembly. The moving structure is arranged on the outer side wall of the catheter body, the rear balloon is arranged on the surface of the moving structure, nutrient solution is prevented from being injected into an orificium fistulae, accordingly, infection to an anastomotic stoma of a patient is avoided, the rehabilitation efficiency of the patient is improved, and convenience is provided for nutrient solution conveying work of the patient.

The invention provides a root certificate updating method, a vehicle and a cloud, and belongs to the technical field of network security of vehicles. By adopting the technical scheme provided by the invention, the vehicle sends the target application request to the cloud under the condition of triggering the power-on operation, and receives the first target response returned by the cloud, so that the target update request is sent to the cloud under the condition that the target update information meets the preset condition; finally, the root certificate of the vehicle is updated based on the second target response returned by the cloud, dynamic and safe updating of the root certificate is realized through interaction between the vehicle and the cloud, the problem of service interruption of the Internet of Vehicles caused by failure of the root certificate is avoided, and the service experience of the Internet of Vehicles is improved. A dynamic updating mechanism enables the vehicle to always keep the validity of the root certificate in the use period, the maintenance cost of the vehicle is reduced, meanwhile, the vehicle sends the target updating request to the cloud only when the target updating information meets the preset condition, the updating accuracy of the root certificate is improved, and the safety of vehicle communication is improved.

This invention discloses a MEMS piezoresistive pressure sensor, relating to the field of semiconductor technology. The MEMS piezoresistive pressure sensor includes an insulating layer, a metal layer, a piezoresistive resistor, a piezoresistive thin film, and a support layer. The insulating layer has a through-hole extending along its thickness direction. The metal layer is disposed on the insulating layer and fills the through-hole, forming a metal circuit. The piezoresistive resistor is disposed on the insulating layer and contacts the metal circuit. The piezoresistive thin film is disposed on the insulating layer and covers the metal layer and the piezoresistive resistor. The support layer is disposed on the side of the piezoresistive thin film opposite to the insulating layer and forms a cavity. The through-hole is larger than the piezoresistive resistor in the width and / or length direction of the insulating layer. This MEMS piezoresistive pressure sensor can be formed using a reverse deposition method, which simplifies the manufacturing process and avoids processes such as ion implantation and diffusion, resulting in lower costs.