18results about How to "Inhibit injection" patented technology

The invention provides a high-k gate dielectric composite material, a preparation method thereof and a beta-Ga2O3 MOS (Metal Oxide Semiconductor) power device. The composite material comprises a beta-Ga2O3 substrate; the SiO2 interface buffer layer is formed on at least one surface of the beta-Ga2O3 substrate; the Al2O3 transition layer is formed on the surface of the SiO2 interface buffer layer; the AlON interface layer is formed on the surface of the Al2O3 transition layer; and the HfO2 high-k main dielectric layer is formed on the surface of the AlON interface layer. Experimental results show that the composite material provided by the invention has a dielectric constant of 15-30, a forbidden bandwidth of greater than 5eV, an interface state density of less than 1 * 10 < 12 > cm <-2 > eV <-1 > and a breakdown field strength of 7MV / cm-15MV / cm, can effectively improve the interface characteristics of a beta-Ga2O3 MOS power device when being used for the beta-Ga2O3 MOS power device, improves the reliability of a gate medium, and is suitable for being applied to high-voltage and high-temperature power devices.

A roof rail (1) is provided with a base (2) made of a resin and a coating film (10) having a metallic luster and covering the surface of the base (2), the coating film (10) comprising a primer film (3) attached to the surface of the base (2) and a metal-containing coating film (4) covering the surface of the base (2) with the primer film (3) interposed therebetween, and the film thickness of the metal-containing coating film (4) is greater than the film thickness of the primer film (3).

This invention relates to a method for fabricating a perovskite / silicon tandem solar cell. The method involves stacking perovskite cells in series on top of silicon cells via an intermediate connecting structure. Based on the current of the perovskite cells or the current of the silicon cells without backscattered light, the current of either the silicon cells without backscattered light or the perovskite cells is adjusted so that the current of the perovskite cells is greater than the current of the silicon cells without backscattered light. The objective of this invention is to provide a perovskite / silicon tandem solar cell and its fabrication method. By adjusting the currents of the perovskite and silicon cells, the current of the perovskite cells is made higher than the current of the silicon cells, thereby utilizing the efficiency gain of bifacial power generation from the bottom cells to improve the conversion efficiency and actual power generation of the tandem solar cell.

The embodiment of the present application discloses a band gap reference circuit, a reference voltage source and a reference voltage generation method, the circuit comprising a current module, a differential input module, a limiting module, a feedback module and a voltage division module, the differential input module generating a first conduction current and a second conduction current in response to a first voltage signal and a second voltage signal of the voltage division module respectively, and then outputting a first output current and a second output current respectively; the limiting module outputting a driving signal to control the feedback module to adjust the first voltage signal and the second voltage signal in response to the first output current and the second output current, so that the first output current and the second output current are equal, and the differential input module outputs a reference voltage with zero temperature coefficient. The limiting module comprises a matching resistor or a low-transconductance switch tube to reduce the offset voltage. The present application sets a matching resistor or a low-transconductance switch tube in the limiting module to reduce the offset voltage of the limiting module and improve the accuracy of the reference voltage.

The invention provides a bidirectional detection protection method and system for industrial control instructions and data transmitted in the same channel. The method comprises the following steps: acquiring network communication flow between an upper computer and a numerical control system; separating a control instruction or service data from the network communication flow; determining the flow direction of the control instruction or the service data; if the flow direction is uplink, detecting the control instruction by adopting a first external intrusion detection strategy aiming at the control instruction, and detecting the service data by adopting a second external intrusion detection strategy aiming at the service data; if the flow direction is downlink, detecting the control instruction by adopting a first internal anomaly detection strategy aiming at the control instruction, and detecting the service data by adopting a second internal anomaly detection strategy aiming at the service data; and executing a corresponding response strategy according to a detection result. The accuracy and the real-time performance of detection are remarkably improved, and the system resource overhead and the false alarm rate are reduced.

The present application relates to computer bottom layer data processing and distributed feature operation technical field, specifically for a kind of multi-source gradient data processing system based on manifold reconstruction;Including: data and knowledge acquisition module, for obtaining the local model gradient update vector uploaded by multi-source data end, knowledge base contains gradient deviation typical mode feature;Ideal manifold reconstruction and simulation module, for generating gradient drift template and gradient anomaly template;Double-track difference feature extraction module, for calculating the theoretical drift deviation and theoretical anomaly deviation between gradient drift template, gradient anomaly template and quantization feature matrix respectively;Situation coupling decision module, for executing the trusted writing of multi-source gradient data or the release or isolated storage instruction of abnormal data rejection;The present application effectively improves the robustness of bottom layer multi-source feature data processing and the reliability of system memory update.

The invention provides a thin film transistor, a manufacturing method thereof and an array substrate. The thin film transistor comprises a substrate; the first electrode is arranged on one side of the substrate, and the first insulating layer is arranged on the side, away from the substrate, of the first part; the second electrode is arranged on the side, away from the substrate, of the first insulating layer; at least part of the carrier isolation layer is arranged on the side, away from the substrate, of the second electrode; the semiconductor layer is arranged on the side, away from the substrate, of the first area and covers the second side wall and at least part of the third area; the carrier concentration of the carrier isolation layer is smaller than that of the semiconductor layer. The carrier isolation layer is arranged between the second electrode and the semiconductor layer and covers part of the first electrode, and the carrier concentration of the carrier isolation layer is lower than that of the semiconductor layer, so that carrier injection from the first electrode and the second electrode to the semiconductor layer is effectively inhibited, and the reliability of the device is improved. Therefore, the threshold voltage stability of the thin film transistor is improved.

The utility model discloses a nutrition support device for anastomotic fistula after esophageal surgery, which belongs to the technical field of medical instruments and comprises a catheter body, a divergence portion, a guide wire, an adjusting component and a moving structure. A nutrition injection channel is formed in the top end of the catheter body, a catheter outlet is formed in the bottom end of the catheter body, side holes are formed in the outer side wall of the catheter, and a front balloon is arranged at the bottom end of the outer side wall of the catheter body. A guide pipe inlet, a front ball inflation inlet and a rear ball inflation inlet are formed in the top end of the branch part, and a front ball inflation valve is arranged at the top end of the front ball inflation inlet. The guide wire is arranged in an inner cavity of the catheter body. A rear ball inflation valve is arranged at the top end of the adjusting assembly. The moving structure is arranged on the outer side wall of the catheter body, the rear balloon is arranged on the surface of the moving structure, nutrient solution is prevented from being injected into an orificium fistulae, accordingly, infection to an anastomotic stoma of a patient is avoided, the rehabilitation efficiency of the patient is improved, and convenience is provided for nutrient solution conveying work of the patient.

The invention provides a root certificate updating method, a vehicle and a cloud, and belongs to the technical field of network security of vehicles. By adopting the technical scheme provided by the invention, the vehicle sends the target application request to the cloud under the condition of triggering the power-on operation, and receives the first target response returned by the cloud, so that the target update request is sent to the cloud under the condition that the target update information meets the preset condition; finally, the root certificate of the vehicle is updated based on the second target response returned by the cloud, dynamic and safe updating of the root certificate is realized through interaction between the vehicle and the cloud, the problem of service interruption of the Internet of Vehicles caused by failure of the root certificate is avoided, and the service experience of the Internet of Vehicles is improved. A dynamic updating mechanism enables the vehicle to always keep the validity of the root certificate in the use period, the maintenance cost of the vehicle is reduced, meanwhile, the vehicle sends the target updating request to the cloud only when the target updating information meets the preset condition, the updating accuracy of the root certificate is improved, and the safety of vehicle communication is improved.

This invention discloses a MEMS piezoresistive pressure sensor, relating to the field of semiconductor technology. The MEMS piezoresistive pressure sensor includes an insulating layer, a metal layer, a piezoresistive resistor, a piezoresistive thin film, and a support layer. The insulating layer has a through-hole extending along its thickness direction. The metal layer is disposed on the insulating layer and fills the through-hole, forming a metal circuit. The piezoresistive resistor is disposed on the insulating layer and contacts the metal circuit. The piezoresistive thin film is disposed on the insulating layer and covers the metal layer and the piezoresistive resistor. The support layer is disposed on the side of the piezoresistive thin film opposite to the insulating layer and forms a cavity. The through-hole is larger than the piezoresistive resistor in the width and / or length direction of the insulating layer. This MEMS piezoresistive pressure sensor can be formed using a reverse deposition method, which simplifies the manufacturing process and avoids processes such as ion implantation and diffusion, resulting in lower costs.

The application discloses a kind of data optimization method and system for retrieving enhanced text generation, comprising: collecting production interaction log, data preprocessing is carried out to production interaction log, obtains data asset;The sample value score of data asset is calculated, and data asset is filtered based on sample value score, and system optimization candidate set is generated;Current operating index and physical resource constraint condition of retrieval enhanced text generation system are collected, and system optimization action of system optimization candidate set is determined according to current operating index and physical resource constraint condition;Based on system optimization candidate set and system optimization action, verification deployment and iterative optimization are carried out to retrieval enhanced text generation system, and online running data is obtained;Online running data is backflowed to production interaction log, and data optimization is completed.The application compared with prior art, it can overcome the defect that prior art lacks evaluation and resource constraint, realize the accurate screening of data and resource controlled online update.

The invention relates to the technical field of semiconductor optoelectronic materials, in particular to a heterojunction photoelectric material based on the in-situ self-reduction surface plasma resonance effect, a preparation method and application, and the technical points are as follows: MoS2 quantum dots are deposited on a substrate, and a Cs2AgBiI6 nanosheet with a selectively exposed (100) crystal face is prepared by a low-temperature solvothermal method to obtain a Cs2AgBiI6 (100) nanosheet; cs2AgBiI6 (100) nanosheets are deposited on a MoS2QDs-substrate through a spin-coating method to prepare a Cs2AgBiI6 (100) / MoS2 QDs-substrate, a reducing agent is sprayed on the surface of the Cs2AgBiI6 (100) / MoS2 QDs-substrate, Ag elementary substances are generated through in-situ reduction, the heterojunction photoelectric material is obtained, an all-inorganic heterojunction system is constructed, the plasma resonance effect is introduced, and collaborative improvement of wide spectral response, high sensitivity, rapid response and high stability is achieved.

This invention discloses a urea-coated titanium dioxide nanowire powder, its preparation method, and its application in rigid-flexible matrix digitally controllable smart materials. The preparation method of the urea-coated titanium dioxide nanowire powder includes the following steps: adding anatase titanium dioxide nanowire powder to a saturated urea solution and sonicating, followed by heat treatment, standing, and drying to obtain the urea-coated titanium dioxide nanowire powder. Compared with existing technologies, this method improves the wetting and dispersion of urea-coated titanium dioxide nanowire powder in silicone oil, reduces its agglomeration in an electric field, and increases interfacial resistance to suppress injection and micro-discharge, thereby achieving reduced leakage current, increased breakdown field strength, faster response, and less hysteresis, while maintaining more stable electrorheological properties under humid and cyclic conditions.

The application discloses a high linearity low noise amplifier based on an improved derivative superposition technology and belongs to the technical field of radio frequency integrated circuit design. The high linearity low noise amplifier comprises a first-stage amplification circuit, a second-stage amplification circuit and a linearization auxiliary circuit. The first-stage amplification circuit performs low noise pre-amplification on a radio frequency input signal; the second-stage amplification circuit adopts a common source and common gate structure and provides main gain, a common source tube gate of the second-stage amplification circuit is connected to a first-stage output, and a common gate tube provides an output; the linearization auxiliary circuit comprises an auxiliary transistor, a gate of the auxiliary transistor is connected to a source of a second-stage common source tube through a fourth capacitor, a drain of the auxiliary transistor is connected to an internal node between a common source tube drain and a common gate tube source in the common source and common gate structure, the gate of the auxiliary transistor is independently biased and powered, and the source of the auxiliary transistor is suspended. According to the application, the sampling point of the auxiliary circuit is moved to the common source tube source, and the compensation current is injected into the internal node of the common source and common gate, and the independent biasing is matched, so that the linearity can be improved, and the influence on input matching and noise performance can be reduced.

The application provides an ASIC chip firmware starting method, device and medium, relates to the technical field of ASIC chip firmware starting, and the method comprises the following steps: loading and running a first firmware from a read-only memory in the ASIC chip; performing second firmware signature verification on a second firmware; if the second firmware signature verification is passed, jumping to the second firmware execution through the first firmware; calling a hardware security module through the second firmware to perform overall signature verification on the firmware package; analyzing the firmware package through the second firmware, and writing each firmware image into a special memory area of a corresponding CPU core respectively; releasing a reset signal of other CPU cores except the first CPU core through the second firmware, so that the other CPU cores acquire and execute corresponding firmware images from the respective special memory areas; and making the first CPU core start executing the firmware image thereof. The application significantly improves the protection capability of the system in a high-security scene.

A semiconductor element suppresses hole injection into a drift region. In a semiconductor element, a semiconductor substrate has an IGBT region that overlaps a collector region, and a diode region that overlaps a cathode region. A part of the plurality of inter-trench semiconductor regions has a hole injection suppression structure having an n-type barrier region in contact with the body region from the lower side, and a columnar region extending from the barrier region to the emitter electrode and in Schottky contact with the emitter electrode. The IGBT region has a boundary region formed by a plurality of the inter-trench semiconductor regions located between a main region and the diode region. The hole injection suppression structures are disposed in the diode region and the inter-trench semiconductor regions in the boundary region. The width of the boundary region in the second direction is 80% or more of the thickness of the semiconductor substrate.

This invention discloses a signal intelligent control method and system for a multi-interface microcontroller, relating to the field of intelligent interface scheduling technology. It includes: S1: Setting a corresponding interface resource configuration template according to the operational requirements of each test mode, and obtaining the conversion probability corresponding to each candidate module through a mode prediction model, generating a corresponding switching request; S2: Managing the switching data stream corresponding to the switching request through a dual-active data buffer, and simultaneously performing multiple verifications on the first frame data in the switching data stream through set real-time data verification points; S3: Setting a corresponding digital twin model according to the interface resource configuration template corresponding to the target mode, obtaining the expected KPI value, and performing adaptive parameter adjustment based on the comparison result between the expected KPI value and the actual KPI data. This invention can predict upcoming test mode transitions in advance and generate pre-scheduling instructions, pre-allocating and preparing interface resources for the target mode.

This invention relates to the field of cable sheathing technology, specifically disclosing an ultra-fine wire high flame-retardant CAT6A signal transmission cable and its preparation method. The invention involves wrapping an insulating HDPE composite material around a conductor to form an insulated core wire, then using Kevlar fiber as filler and covering it with polytetrafluoroethylene tape to form the cable core. Finally, a flame-retardant TPE composite material is wrapped around the cable core. The resulting cable exhibits excellent flame-retardant properties, self-extinguishing after being removed from the fire, and superior insulation performance, meeting the needs of the network equipment connection industry. It also possesses signal integrity transmission performance at 15.0m using TIA Patch Cord Cat6A.