99 results about "Electron flow" patented technology

The invention discloses a low-temperature vacuum annular electron accelerator arc reactor, which relates to the field of electromagnetism and is applied to the technology and concept of energy generation, conversion and transmission. The device is composed of a high-voltage electron gun module (1), a low-temperature vacuum annular pipe module (2), a sealing module (3), an accelerating electric field module (4), a magnet guiding module (5), a magnetic core module (6), an induction coil output module (7) and a base module (8). According to the technology and the concept, a low-temperature vacuum annular electron accelerator is used for replacing a primary coil winding of a traditional transformer, that is, the same electric field is used for circularly accelerating electrons emitted into an annular vacuum tube by an electron gun to form annular electron flow to replace the primary coil winding of the traditional transformer. When the high-speed circling electrons lose to accelerate the action of an electric field, due to the mass inertia effect of the high-speed electrons, the annular current cannot disappear immediately under the guidance of the magnetic lines of force of the fixed magnet, the magnetic flux of the magnetic core still changes, and therefore the secondary coil can still obtain corresponding arc discharge. Therefore, the inductive discharge of the secondary coil can reversely act on the energy conversion of the accelerating electric field or the electron gun, so that the energy conversion efficiency is improved, and the energy loss is reduced.

A Metal Oxide Semiconductor (MOS) transistor cell design has a source region and a first base layer extending in a third dimension. When a control voltage greater than a threshold value is applied on the gate trench, electrons flow from a singular point within the source region, into a radial MOS channel formed on the lateral walls of those trench regions surrounded by the first base layer, but not abutting on the higher doped second base layer. The MOS channel width is determined by a quadrant centred on the singular point and with a radius equal to the separation region between the singular point and the maximum surface doping concentration point in the first base layer.

This invention provides a method for preparing a zinc anode protective coating based on a dual-gradient zinc-affinity-conductivity structure. First, polymer-derived carbon fibers and silver-coated carbon fibers are prepared, and silver-coated carbon fiber slurries and polymer-derived carbon fiber slurries are formed respectively. These are then sequentially coated onto a zinc sheet using a stepwise slurry coating method to obtain a CF / Ag-CF@Zn electrode. This CF / Ag-CF@Zn electrode forms a dual-gradient protective coating with a top layer of polymer-derived carbon fibers and a bottom layer of silver-coated carbon fibers. By relying on the inherent zinc affinity-conductivity difference of the materials, it can directionally guide the internal ion-electron flow to achieve a safe bottom zinc deposition mode, thereby avoiding unfavorable top zinc dendrite growth. This achieves a highly reversible and stable zinc anode, providing a more competitive approach for rationally designing zinc anode coatings to construct ultra-stable aqueous zinc batteries.

The invention relates to a gas chromatograph and a chromatographic analysis method for analyzing sulfides in fuel hydrogen, the gas chromatograph comprises an electronic flow controller, a sample injection valve, a flow path selection valve and a plasma emission detector, two branches are arranged between the sample injection valve and the flow path selection valve, the first branch comprises a chromatographic column I, a cutting valve I and a chromatographic column II which are used for separating H2, CH4S and CS2 from sample gas, the second branch comprises a chromatographic column III, a cutting valve II and a chromatographic column IV which are used for separating fuel hydrogen, H2S and COS from the sample gas, and the plasma emission detector is used for quantitatively detecting CH4S, CS2, H2S and COS which are completely separated. Therefore, operation, use and maintenance are simple, only helium is used as carrier gas, and sensitivity is high.

A superlattice structure for a thin film solar cell includes superimposed layers of nanocrystals and is configured to generate a flow of electrons across the layers when it is irradiated by a solar radiation. Each of the layers includes an array of nanocrystals which have substantially the same size and shape and the nanocrystals of each of the layers have different size and / or different shape with respect to the nanocrystals of the other layers. The layers are sorted in such an order that the superlattice structure is anisotropic. A thin film solar cell having the superlattice structure and a method for making the superlattice structure is related.

The invention relates to the technical field of wastewater treatment, in particular to a device for treating organic wastewater by activating persulfate, which comprises an outer barrel, a separation barrel, an outer catalysis barrel, an inner catalysis barrel and a heat source, the heat source is used for activating persulfate on the outer catalytic layer to generate a potential difference between the outer catalytic cylinder and the inner catalytic cylinder, and electrons flow to the inner catalytic cylinder to activate a catalyst on the inner catalytic cylinder; the barrel cavity is divided into the outer activation area and the inner oxidation area which are communicated with each other by the separation barrel, so that direct contact between to-be-treated sewage and an oxidizing agent can be avoided, contact between corresponding free radicals and to-be-treated organic matters is avoided, generation of corresponding by-products is reduced, the utilization rate of activation electrons is increased, and the service life of the device is prolonged. And the persulfate is directly heated and is not diluted after entering the outer activation area, so that the electron generation efficiency is improved, the utilization rate of the persulfate is improved, a heat source only needs to heat a small amount of persulfate, and the energy consumption is saved.

A memory device includes a substrate, a capacitor structure, a support layer, and a conductive structure. The capacitor structure is over the substrate. The capacitor structure comprises a lower electrode, a capacitor dielectric layer and an upper electrode. The capacitor dielectric layer is over the lower electrode. The upper electrode is over the capacitor dielectric layer. The support layer is over the substrate and is in contact with an outer surface of the lower electrode of the capacitor structure. The conductive structure contacts the capacitor structure. The conductive structure includes a first epitaxial layer, a second epitaxial layer and a third epitaxial layer. The first epitaxial layer is arranged above the upper electrode. The second epitaxial layer is over the first epitaxial layer. The third epitaxial layer is over the second epitaxial layer. The conductive structure of the memory element may have a lower total resistance while minimizing discontinuity at the interface and improving the electron flow path.

The invention aims to overcome the defects of a traditional microbial fuel cell (MFC), and provides a built-in biological carrier cage tube type microbial fuel cell device, namely a novel microbial fuel cell device in which a tubular reactor is coupled with the MFC. The built-in mesh cage type device is filled with macroporous adsorption resin serving as a biological carrier, when wastewater passes through, a biological membrane is formed on the surface of the built-in mesh cage type device so as to degrade organic pollutants and generate electrons and protons, the electrons are collected by a current collector and then flow to a cathode to form current, and the protons are transmitted to the cathode to be subjected to reduction reaction. The device structure main body can be formed by connecting a plurality of single-tube type MFC reactor units in series or in parallel, the device structure main body can be flexibly adjusted according to the actual application scale, and the parallel combination adopts U-shaped joints for connection. A single MFC unit has a specific structure and has a unique design of separation of an anode, a cathode and a carrier cage, and a biological carrier, namely macroporous adsorption resin, is stored in the carrier cage. Flanges are mounted at the head and tail of the MFC, so that maintenance operation is facilitated. According to the design, a plug flow reactor model is adopted, high efficiency and accuracy are ensured, accurate control and optimization of the reaction process are realized, the sewage treatment efficiency and effect are improved, and more thorough purification treatment and energy recovery are realized.

The invention belongs to the technical field of catalysts, and discloses a C2N coated sulfurized zero-valent iron catalyst and a preparation method and application thereof. The catalyst comprises C2N and sulfurized zero-valent iron, and the C2N wraps the surface of the sulfurized zero-valent iron. The method has the advantages that (1) the surface of the sulfurized zero-valent iron is coated with a layer of two-dimensional material C2N, electrons in the zero-valent iron are accelerated to flow to the surface and are in better contact with an oxidant PDS, so that the activation efficiency of persulfate is greatly improved, and chlorinated organic pollutants in underground water are efficiently removed; through the vapor deposition process of C2N precursor pyrolysis, a uniform and ultrathin C2N layer can be formed on the surface of S-ZVI, strong chemical bonding is formed between C2N and the surface of S-ZVI, and an efficient electron conduction channel is constructed. The structural design is beneficial to accelerating migration of electrons in the S-ZVI to the surface, and the activation efficiency of PDS is improved.

The present invention relates to a chemical reaction prediction system, a control method thereof, and a learning method for a chemical reaction prediction system. More specifically, the present invention relates to a chemical reaction prediction system that performs forward reaction prediction based on electron flow, a control method thereof, and a learning method for a chemical reaction prediction system.

Methods for nucleic acid sequencing include providing at least one device comprising a first electrode and a second electrode separated by a dielectric layer, and a polymerase attached to a surface of the dielectric layer. The dielectric layer induces an electroactive molecule to interact with the electrodes to complete an electrical circuit. The polymerase targets a polynucleotide strand to the dielectric layer. A sample comprising the polynucleotide strand and a modified nucleotide having an electroactive label covalently bound to a 3'-OH of a sugar ring of the nucleotide via an ester group is provided to the at least one device. An electrical potential is applied to each electrode to induce a flow of electrons between the electrodes to produce a measurable electrical signal when the electroactive label is present in the dielectric layer. The electrical signal from the electrodes is detected to determine when the modified nucleotide is present in the dielectric layer.

The invention relates to the technical field of electron emission, and discloses a large-current pulse micro-channel plate electron emission source and an X-ray generation device. According to the electron emission source, an electron emission function layer at the head end of an MCP assembly is excited by adopting a rapidly regulated and controlled UV LED light source, and ultrafast time sequence modulation of electron beams is realized through an avalanche multiplication process of the electron beams in the MCP. By adopting a specific high-lead, low-alkali or alkali-free glass component or ceramic substrate composite functional film layer structure, the MCP assembly has long service life stability of low resistance, high current output and high power density operation. Independent bias voltage and gating voltage synchronous with electronic pulse are applied to the MCP assembly through the driving control unit, accurate thermal management is carried out in combination with a pulse-charging circulation mode, and the problems of charge compensation and thermal limitation under large current output are effectively solved. The electron emission source breaks through the bottleneck, supports peak current density exceeding 100 mA / cm under submicrosecond pulse, and realizes hundred microampere level steady-state current output under millisecond level long pulse.

This invention provides a signal-enhanced pulsed discharge helium ionization detector and detection method, comprising a sample introduction module and, from top to bottom, a grounding module, a discharge region module, and a dual-biased electrode ion focusing module. The grounding module includes a grounding cathode needle. Helium, serving as both the carrier gas and discharge gas, enters the discharge region module from the grounding module. The grounding cathode needle is used to ionize the helium gas within the discharge region module to generate discharge material. The dual-biased electrode ion focusing module includes a collecting electrode and a first bias electrode and a second bias electrode coaxially disposed upstream and downstream of the collecting electrode. The second bias electrode provides a reverse electric field to transport electrons flowing with the helium gas to the collecting electrode. The sample introduction module, located below the dual-biased electrode ion focusing module, is used to inject the standard gas sample to be detected countercurrently from the bottom into the dual-biased electrode ion focusing module to mix and ionize with the discharge material. This invention can significantly enhance the output signal, improve sensitivity, and increase the signal-to-noise ratio.

An electric generator can include: a radionuclide to emit gamma radiation (GR); an emitter having an emitter atom to receive the emitted GR so that, the GR causes an electron of an emitter atom to be liberated, and thereby be emitted from an emitter surface; a collector spaced from the emitter surface forming a gap between the emitter surface and a collector surface; and a gas having a gas atom and a gas pressure, in the gap, to receive, GR passed through the emitter so that, the received GR causes an electron of the gas atom to be liberated; wherein electrons liberated from the emitter atom and the gas atom are received by the collector, thereby causing an electrical potential difference between the emitter and the collector, and so that an electric current corresponding to a flow of electrons between the emitter and the collector is producible from the collector.

The invention provides a fingernail integrated system for monitoring cardiovascular health of a human body, which is characterized in that firstly, a photoelectric detector device performs matching between energy bands to construct a built-in electric field through different energy band structures of materials, when light irradiates a light active layer, electron absorption energy jumps to a conduction band to generate electron-hole pairs, and the energy of the conduction band of an electron transport layer is relatively low, so that the electron-hole pairs are generated; electrons flow to the electron transport layer and are conducted away by the electrode, and holes left in a valence band flow to the hole transport layer and are conducted away by the electrode, so that the device can generate current under the condition of not applying voltage, which indicates that the photoelectric detector can operate under the condition of low power consumption; meanwhile, due to the vertical structure and the self-powered characteristic of the photoelectric detector, the area of the device can be greatly reduced, a patterned electrode can be designed, the size of the electrode can be freely adjusted, and therefore personalized and miniaturized electrode preparation is achieved.

The invention relates to a device and a method for irradiating a liquid with accelerated electrons, wherein a) accelerated electrons are generated by an electron generator (10) and pass through an electron exit window (11); b) a treatment chamber (12) is provided parallel to the electron exit window (11), the liquid to be irradiated with accelerated electrons flowing through the treatment chamber; c) a free space (14) is formed between the electron exit window (11) and the treatment chamber (12), a first gas flowing through the free space, and d) a reservoir (16) for receiving an ozone-containing second gas is provided below the treatment chamber (12), e) the second gas being formed with an overpressure in the reservoir (16), and f) at least one region of a wall between the treatment chamber (12) and the reservoir (16) being provided in the form of a plate-like element (18), into which a plurality of openings (20) are introduced through which the ozone-containing second gas flows into the treatment chamber (12).

This gas phase reduction device for carbon dioxide comprises: an oxidation tank 1 that includes an oxidation electrode 2; a reduction tank 4 that is adjacent to the oxidation tank 1 and that is supplied with carbon dioxide; and a composite body 20 that is disposed between the oxidation tank 1 and the reduction tank 4 and that includes a plurality of reduction electrodes 5A and 5B and an electrolyte film 6. The plurality of reduction electrodes 5A and 5B are disposed on the reduction tank 4 side. The electrolyte film 6 is disposed on the oxidation tank 1 side. The plurality of reduction electrodes 5A and 5B are connected to the oxidation electrode 2 by a conducting wire 7 and each perform a different reduction reaction due to electrons flowing through the conducting wire 7.

The invention discloses a reverse conducting IGBT with an electron blocking layer. An apparatus and related methods for reverse conducting insulated gate bipolar transistors and related structures. The device includes a substrate disposed between a front surface and a back surface, a diode pilot region disposed in the substrate, an insulated gate bipolar transistor (IGBT) region disposed in the substrate, and a diode region having a barrier layer disposed adjacent to and between each of the diode pilot region and the IGBT region. The barrier layer is configured to prevent electron flow at a first predetermined current and to allow electron flow at a second predetermined current.

A negative ionization cell for negatively ionizing fine, ultrafine or nanoparticles present in an air flow defined by fumes, vehicle exhaust gases or indoor environments is disclosed. The cell has a body defining an ionizing part having first and second portions which are elongated, preferably plate-like, and facing each other. The first portion has a negative voltage to generate a potential difference with the second portion. The first and second portions also define a passage for the air flow and the first portion supports a plurality of elongated and sharp-pointed bodies projecting into the passage for the air flow and orthogonally to the air flow. The elongated and sharp-pointed bodies generate an electron flow, directed toward the second portion due to the potential difference and intercept the solid particles in the air flow to negatively charge them. An air purifier including the negative ionization cell is also disclosed.

The invention relates to the technical field of fuel cells, and discloses a tubular solid oxide fuel cell (SOFC) stack with waste heat utilization, which comprises a metal cover and a cell unit, the cell unit is fixedly connected in the metal cover, and the cell unit is composed of at least one group of anode half cell unit and cathode half cell unit; according to the invention, the anode half-cell units and the cathode half-cell units are mutually staggered and closely arranged along the chessboard-shaped manner, so that the area of the outer surface is obviously increased, and a larger effective reaction area is provided for an electrode-electrolyte interface; an electron transmission path between adjacent units is changed from traditional transmission along a tube axis direction to short-distance transverse transmission, so that the length of an electron flow path is remarkably shortened, and the internal ohmic impedance of the whole cell stack is reduced; meanwhile, each half cell unit forms an independent fuel gas or air flow channel, so that the number of middle current collecting components is reduced, and the structural integration level of the cell stack is improved.

The application discloses a vacuum ultraviolet high-power deuterium lamp light source, which comprises a light-emitting anode and a light-emitting cathode, the light-emitting anode is a light-emitting double anode, the light-emitting double anode comprises a main anode and a secondary anode, the secondary anode is a light-emitting grating tube with a small transmission aperture, and the main anode is a metal cylinder with a large size; primary breakdown is realized through the gas between the secondary anode and the light-emitting cathode, then secondary breakdown is realized through the main anode, and vacuum ultraviolet radiation light is output. The application solves the problem of low light power of the existing vacuum ultraviolet deuterium lamp light source, greatly improves the electron current density of the deuterium arc, and improves the light-emitting efficiency.

The invention discloses a flash memory. A gate dielectric layer of a memory tube comprises a tunneling dielectric layer, a memory medium layer and a barrier dielectric layer which are stacked in sequence. The storage medium layer comprises a first silicon nitride layer, a second interface layer and a third silicon nitride layer which are stacked in sequence. The first silicon nitride layer and the third silicon nitride layer have the defect of storing programming electrons. And the second interface layer is made of silicon oxynitride. When the storage tube is in a programming state, programming electrons are stored in the defect of the first silicon nitride layer and the defect of the third silicon nitride layer, and the characteristic that the forbidden bandwidth of silicon oxynitride is larger than that of silicon nitride is utilized to reduce the programming electrons flowing out of the storage medium layer. The invention further discloses a manufacturing method of the flash memory. According to the invention, the leakage of programming electrons stored in the storage medium layer can be reduced, so that the reliability of the storage tube device can be improved, and the erasing times and the long-term stability of the storage tube are increased.

1. The name of the design product: electronic flowmeter (chemical industry). 2. The use of the design product: the design product is used for measuring the flow of liquid in a pipeline. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

According to the green phosphorescent doped material, the preparation method thereof and the application of the green phosphorescent doped material in an organic electroluminescent device, a platinum-containing ONCN tetradentate ligand structure is introduced into the structure of the phosphorescent doped material, so that the stability of a compound can be effectively improved, and a tetramethyl-substituted cyclohexane acene structure is further connected, so that the stability of the compound is improved. The tetramethyl-substituted cycloalkyl phenyl structure has a hyperconjugation effect, the structure is more stereoscopic in space, the tetramethyl-substituted cycloalkyl phenyl structure can be used as a steric hindrance structure, aggregation quenching can be reduced, the electron mobility in the whole structure can be enhanced, close packing between molecules can be effectively prevented, and the concentration of excitons can be effectively reduced; and more efficient energy transmission can be realized, so that the luminous efficiency and the service life of the organic light-emitting device are improved and prolonged, and meanwhile, relatively low driving voltage can be maintained.

A semiconductor structure and a method of forming the same, the structure comprising: a substrate, the substrate comprising a drift region; an isolation structure within the drift region, the isolation structure comprising at least one first portion and at least one second portion, the second portion having a dimension along a first direction that is less than a dimension of the first portion along the first direction, the first portion and the second portion being arranged alternately along a second direction, the first portion and the second portion being adjacent to each other, the second direction being parallel to a surface of the substrate, and the first direction being a direction from a top surface of the substrate to a bottom surface of the substrate. When electrons flow from a source, a portion of the electrons do not need to move along a sidewall surface of the first portion to a bottom of the first portion and then to a drain, but instead move along a sidewall surface of the second portion to a bottom of the second portion and then to the drain. The flow path of the electrons along the second portion is shorter than the flow path of the electrons along the first portion, resulting in a reduction in the on-resistance of the device.

A semiconductor structure and a method for forming the same. The method includes forming a mask structure on a substrate; forming a first opening in the mask structure; forming at least one second opening inside the first opening, the second opening having a bottom lower than the bottom of the first opening, the at least one second opening being in communication with the first opening to form an isolation pattern; transferring the isolation pattern into the substrate to form an isolation trench in the substrate; and filling the isolation trench to form an isolation structure. In the isolation trench, a region corresponding to the second opening has a greater depth than a region corresponding to a non-second opening. When filling the isolation trench to form the isolation structure, the region corresponding to the second opening has a greater depth of the isolation structure than the region corresponding to the non-second opening. When electrons flow from a source, the flow path of the electrons flowing along the region corresponding to the non-second opening is shorter than the flow path of the electrons flowing along the region corresponding to the second opening, resulting in a reduced on-resistance of the device.

The invention discloses a high-charge heavy-ion high-energy-intensity laser. A high-intensity single-charge heavy-ion beam is obtained by transversely colliding a single-charge heavy-ion beam injection section with a low-speed multi-surface side-by-side correlation surface electron flow containing an unionized atom return channel; a high-intensity single-charge heavy ion beam is converted into a high-intensity high-charge heavy ion beam with the ionization degree of mu by adopting a flat runway-shaped high-speed multi-surface side-by-side correlation surface electron flow transverse collision high-charge heavy ion ionization ring with two high-charge ionization regions; high-charge heavy ion high-energy laser and heavy ion beam emission is realized by adopting a flat runway-shaped high-speed multi-surface side-by-side correlation surface electron flow to transversely collide with a high-charge heavy ion excitation ring. The intensity of surface electron flow, heavy ion beam and laser beam can be greatly improved by adopting the electrified thermionic cathode which is connected in parallel with the high-capacity super capacitor and has the width increased by more than five times. According to different laser wavelengths and powers, various practical purposes can be achieved from obtaining of a high-contrast holographic image of an internal atomic structure of a organism to serving as a novel high-energy strong laser weapon.

X-ray tubes that have a reduced exposure time for dental X-ray imaging and 3D dental imaging systems using these X-ray tubes are described. The X-ray tubes contain an anode, a filament, a cathode electrically connected to the filament, and a voltage source electrically connected to the cathode. The voltage source provides a high voltage to the anode relative to the cathode and filament control voltage. A low filament control voltage is used to generate electrons using a process of thermionic emission. These electrons are driven by a large electric field generated between the cathode and anode towards the target on the anode. A bias voltage is applied between the cathode and the filament to control the electron flow from the emitting filament to the anode. Such a configuration yields a switching speed ranging from about 1 ms to about 10 ms, allowing a short X-ray exposure time and a quicker overall imaging process for the 3D dental X-ray imaging systems. Other embodiments are described.

The application discloses a multi-cyan structure near-infrared fluorescent dye, by changing the structure of end group and intermediate condensing agent, the accurate control of dye electron donating type, charge separation degree and electron mobility is realized. The multi-cyan structure near-infrared fluorescent dye compound prepared by the application has significant advantages in spectral characteristics, the molar extinction coefficient is higher than that of traditional multi-cyan dye, the light energy absorption capacity is strong, which is helpful to improve the light energy utilization rate and reduce the dye amount; the absolute fluorescence quantum yield reaches a high level, the imaging signal intensity and sensitivity are significantly enhanced, a more sensitive and reliable tool is provided for biological imaging and molecular detection; the fluorescent dye compound has excellent biocompatibility and phototoxicity, the safety of the dye in the application in the biological and medical fields is ensured, and strong support is provided for the application of the dye in the field of cancer treatment.

The application discloses a high-efficiency traveling wave tube focusing magnetic field fast optimization method under dynamic input, and belongs to the field of microwave vacuum electron technology.The method firstly constructs a high-frequency structure model in an electromagnetic simulation software, imports an initial PCM magnetic field to perform PIC simulation to obtain electron trajectories and an initial current distribution;then, the electron trajectories are simulated in combination with a three-dimensional electron motion and a space charge force equation, y-direction projection is taken, the outermost two trajectories are selected, and an optimized PCM magnetic field is obtained through an optimization algorithm iteration; subsequently, the magnetic field is imported to perform PIC simulation to obtain a new current distribution, and after convergence is judged, the iteration optimization is repeated, and finally, an optimal PCM magnetic field is obtained.The application realizes accurate optimization of the magnetic field under dynamic signal input, greatly shortens the magnetic system optimization period, effectively reduces the intercepted current, improves the electron flow rate, and guarantees the output power of the traveling wave tube and the overall tube efficiency.