250 results about "Electron flow" patented technology

Embodiments described herein relate to electrochemical cells with one or more current collectors divided into segments, and methods of producing the same. A current collector divided into segments comprises a substantially planar conductive material including a connection region and an electrode region. The electrode region includes one or more dividers defining a plurality of electron flow paths. The plurality of electron flow paths direct the flow of electrons from the electrode region to the connection region. In some embodiments, the current collector includes a fuse section disposed between the electrode region and the connection region. In some embodiments, the fuse section can include a thin strip of conductive material, such that the thin strip of conductive material melts at a melting temperature and substantially prevent electron movement between the electrode region and the connection region.

To improve the luminous efficiency of a UV light-emitting device, the UV light-emitting devices disclosed herein have an AlGaN-based crystal or an InAlGaN-based crystal, and comprise an emission layer, at least one electron blocking layer, a first p-type doped layer, and a composition gradient layer in which the Al composition ratio varies depending on the position over a thickness direction of the layer stack, stacked in this order in the direction of the flow of electrons. The Al composition ratio varies depending on the position over the thickness direction in the composition gradient layer. The UV light-emitting devices are implemented as UV-region light-emitting diodes and laser diodes.

The present disclosure provides an avalanche photodetector and a preparation method therefor. The avalanche photodetector comprises: a substrate, the surface of which comprises a first semiconductor layer; and a second semiconductor layer located on the substrate, wherein the first semiconductor layer comprises a first P-type doped region, a second P-type doped region, a third N-type doped region, a first intrinsic region, a third P-type doped region, a second intrinsic region, a second N-type doped region and a first N-type doped region which are sequentially arranged in a first direction, the dopant concentrations of the first to third P-type doped regions are sequentially decreased, the dopant concentrations of the first to third N-type doped regions are sequentially decreased, and the first direction is an electron flow direction; the second semiconductor layer sequentially covers part of the second P-type doped region, the third N-type doped region, the first intrinsic region and the third P-type doped region in the first direction; the first N-type doped region is connected to a first electrode; the third P-type doped region is connected to a second electrode; and the first N-type doped region is connected to a third electrode.

The invention relates to the technical field of air purification, and discloses a space air particle differentiation system and a control method thereof.The space air particle differentiation system comprises an air particle separation module and a control module, the air particle separation module comprises an air inlet, a cyclone separation barrel and a detachable dust collection barrel, the cyclone separation barrel separates particles in air through centrifugal force classification, and the separated particles fall into the bottom dust collection barrel; the ultraviolet catalysis module comprises an ultraviolet reaction chamber, the inner wall of the ultraviolet reaction chamber is coated with a photocatalyst, and a UV-C light source is configured and used for decomposing organic pollutants and microorganisms; the electron-ozone reaction module comprises a mixed flow pipeline fan and an exhaust port, the mixed flow pipeline fan forms negative pressure airflow in the system, and purified air is exhausted through the exhaust port. Through cooperation of cyclone separation, ultraviolet catalysis and electron-ozone reaction, large particles are removed through cyclone separation, organic matter is decomposed through ultraviolet catalysis, microorganisms and superfine particles are oxidized and decomposed in a reaction chamber through electron flow and ozone, the maintenance period is prolonged, and efficient consumable-free purification is achieved.

The invention discloses a method for regulating and controlling the spin state of a two-dimensional antiferromagnetic semiconductor by using a JANUS structure, and the method comprises the following steps: constructing a two-dimensional antiferromagnetic semiconductor material structure model, and carrying out the geometric optimization; calculating magnetic properties and electronic properties based on the optimized structure; replacing halogen atoms on one side to obtain a two-dimensional A-type antiferromagnetic semiconductor material structure model with a JANUS structure, and performing geometric optimization; based on the optimized JANUS structure, the magnetic property and the electronic property of the JANUS structure are calculated; and comparing the spin state near the Fermi level of the optimized two-dimensional antiferromagnetic semiconductor material with the spin state near the Fermi level of the optimized two-dimensional A-type antiferromagnetic semiconductor material with the JANUS structure. According to the method, on the basis of a two-dimensional antiferromagnetic material, a JANUS structure is introduced, the magnetism of the material is not changed, meanwhile, a single polarization spin electron current is introduced at the Fermi level, and a theoretical model is provided for preparing related materials.

[Problem] A technology is provided that is advantageous in effectively reducing PLS noise and suppressing obstruction of the flow of electrons in a photoelectric conversion portion.[Means of Solution] The pixel separation portion is provided with a first light-shielding member that is disposed closer to the color filter than the charge transfer portion is. The first light-shielding member includes a first light-shielding portion that extends in a depth direction of the substrate, and a second light-shielding portion that extends in a width direction perpendicular to the depth direction and is disposed at a position that overlaps with the charge transfer portion of the first-type pixel when viewed from above in the depth direction. At least a part of a portion of the pixel separation portion facing the second light-shielding portion in the width direction is disposed at a position that does not overlap with the first-type color filter but overlaps with the second-type color filter when viewed from above in the depth direction.

The invention discloses a low-temperature vacuum annular electron accelerator arc reactor, which relates to the field of electromagnetism and is applied to the technology and concept of energy generation, conversion and transmission. The device is composed of a high-voltage electron gun module (1), a low-temperature vacuum annular pipe module (2), a sealing module (3), an accelerating electric field module (4), a magnet guiding module (5), a magnetic core module (6), an induction coil output module (7) and a base module (8). According to the technology and the concept, a low-temperature vacuum annular electron accelerator is used for replacing a primary coil winding of a traditional transformer, that is, the same electric field is used for circularly accelerating electrons emitted into an annular vacuum tube by an electron gun to form annular electron flow to replace the primary coil winding of the traditional transformer. When the high-speed circling electrons lose to accelerate the action of an electric field, due to the mass inertia effect of the high-speed electrons, the annular current cannot disappear immediately under the guidance of the magnetic lines of force of the fixed magnet, the magnetic flux of the magnetic core still changes, and therefore the secondary coil can still obtain corresponding arc discharge. Therefore, the inductive discharge of the secondary coil can reversely act on the energy conversion of the accelerating electric field or the electron gun, so that the energy conversion efficiency is improved, and the energy loss is reduced.

A Metal Oxide Semiconductor (MOS) transistor cell design has a source region and a first base layer extending in a third dimension. When a control voltage greater than a threshold value is applied on the gate trench, electrons flow from a singular point within the source region, into a radial MOS channel formed on the lateral walls of those trench regions surrounded by the first base layer, but not abutting on the higher doped second base layer. The MOS channel width is determined by a quadrant centred on the singular point and with a radius equal to the separation region between the singular point and the maximum surface doping concentration point in the first base layer.

An electrochemical power system is provided that generates an electromotive force (EMF) from the catalytic reaction of hydrogen to lower energy (hydrino) states providing direct conversion of the energy released from the hydrino reaction into electricity, the system comprising at least two components chosen from: H2O catalyst or a source of H2O catalyst; atomic hydrogen or a source of atomic hydrogen; reactants to form the H2O catalyst or source of H2O catalyst and atomic hydrogen or source of atomic hydrogen; and one or more reactants to initiate the catalysis of atomic hydrogen. The electrochemical power system for forming hydrinos and electricity can further comprise a cathode compartment comprising a cathode, an anode compartment comprising an anode, optionally a salt bridge, reactants that constitute hydrino reactants during cell operation with separate electron flow and ion mass transport, and a source of hydrogen. Due to oxidation-reduction cell half reactions, the hydrino-producing reaction mixture is constituted with the migration of electrons through an external circuit and ion mass transport through a separate path such as the electrolyte to complete an electrical circuit. A power source and hydride reactor is further provided that powers a power system comprising (i) a reaction cell for the catalysis of atomic hydrogen to form hydrinos, (ii) a chemical fuel mixture comprising at least two components chosen from: a source of H2O catalyst or H2O catalyst; a source of atomic hydrogen or atomic hydrogen; reactants to form the source of H2O catalyst or H2O catalyst and a source of atomic hydrogen or atomic hydrogen; one or more reactants to initiate the catalysis of atomic hydrogen; and a support to enable the catalysis, (iii) thermal systems for reversing an exchange reaction to thermally regenerate the fuel from the reaction products, (iv) a heat sink that accepts the heat from the power-producing reactions, and (v) a power conversion system.

The present invention relates to an electron emitter device, a method for generating an electron flow, an X-ray source, and a computer program product. The electron emitter device according to the present invention has: - field effect emitter pins of a first ring, the field effect emitter pins of the first ring forming a first emitter surface on the inner side of the first ring, and - field effect emitter pins of a second ring, the field effect emitter pins of the second ring forming a second emitter surface on the inner side of the second ring, wherein the first ring and the second ring are arranged such that the first emitter surface and the second emitter surface form a substantially continuous three-dimensional total emitter surface, the total emitter surface being hollow along a longitudinal axis.

This invention provides a method for preparing a zinc anode protective coating based on a dual-gradient zinc-affinity-conductivity structure. First, polymer-derived carbon fibers and silver-coated carbon fibers are prepared, and silver-coated carbon fiber slurries and polymer-derived carbon fiber slurries are formed respectively. These are then sequentially coated onto a zinc sheet using a stepwise slurry coating method to obtain a CF / Ag-CF@Zn electrode. This CF / Ag-CF@Zn electrode forms a dual-gradient protective coating with a top layer of polymer-derived carbon fibers and a bottom layer of silver-coated carbon fibers. By relying on the inherent zinc affinity-conductivity difference of the materials, it can directionally guide the internal ion-electron flow to achieve a safe bottom zinc deposition mode, thereby avoiding unfavorable top zinc dendrite growth. This achieves a highly reversible and stable zinc anode, providing a more competitive approach for rationally designing zinc anode coatings to construct ultra-stable aqueous zinc batteries.

The invention relates to a gas chromatograph and a chromatographic analysis method for analyzing sulfides in fuel hydrogen, the gas chromatograph comprises an electronic flow controller, a sample injection valve, a flow path selection valve and a plasma emission detector, two branches are arranged between the sample injection valve and the flow path selection valve, the first branch comprises a chromatographic column I, a cutting valve I and a chromatographic column II which are used for separating H2, CH4S and CS2 from sample gas, the second branch comprises a chromatographic column III, a cutting valve II and a chromatographic column IV which are used for separating fuel hydrogen, H2S and COS from the sample gas, and the plasma emission detector is used for quantitatively detecting CH4S, CS2, H2S and COS which are completely separated. Therefore, operation, use and maintenance are simple, only helium is used as carrier gas, and sensitivity is high.

A superlattice structure for a thin film solar cell includes superimposed layers of nanocrystals and is configured to generate a flow of electrons across the layers when it is irradiated by a solar radiation. Each of the layers includes an array of nanocrystals which have substantially the same size and shape and the nanocrystals of each of the layers have different size and / or different shape with respect to the nanocrystals of the other layers. The layers are sorted in such an order that the superlattice structure is anisotropic.A thin film solar cell having the superlattice structure and a method for making the superlattice structure is related.

The present disclosure is directed to a method of manufacturing one or more needles of a probe card by refining and processing a conductive body that extends from the probe card to form a respective tip at the end of the respective conductive body. Forming the respective tip of a respective needle includes removing respective portions from the end of the conductive body by flowing an electrolytic fluid between a conductive pattern structure and an end of the respective conductive body. Removing the respective portions with the flow of the electrons may be performed in multiple successive steps to form various needles with various sizes, shapes, and profiles (e.g., cylindrical, rectangular, triangular, trapezoidal, etc.).

The invention discloses a power generation mode using electronic one-way conduction characteristics. 'One-way conduction' refers to different hindrances encountered by electron flow in different conductive directions. Under thermal motion, electrons are accumulated at one end of the one-way conducting device, potential difference is formed between the electrons and the other end of the one-way conducting device, and the two ends can serve as a power source after being connected out. According to the power generation mode, the self temperature can be reduced in the external power generation process, and the refrigeration effect is achieved.

The invention discloses a two-step water electrolysis hydrogen production device based on a three-electrode system and a hydrogen production method, and belongs to the technical field of water electrolysis, the two-step water electrolysis hydrogen production device comprises an oxygen evolution catalytic electrode, a hydrogen evolution catalytic electrode and a quinone polymer electrode HMND, the HMND is reduced in an acidic electrolyte to form a negatively charged intermediate, and the negatively charged intermediate and hydrogen ions are subjected to a coordination reaction to form HMND-2H; hydrogen ions are subjected to electrochemical reduction at the cathode oxygen evolution catalytic electrode to generate hydrogen, the HMND-2H electrode is subjected to electrochemical oxidation to form an HMND electrode, and electrons flow to the hydrogen evolution catalytic electrode from the HMND-2H electrode through an external circuit; the HMND electrode is electrochemically reduced into an HMND-2H electrode, water molecules are electrochemically oxidized into oxygen on the surface of the oxygen evolution catalytic electrode, and electrons flow to the HMND electrode from the oxygen evolution catalytic electrode through an external circuit; the hydrogen production process and the oxygen production process of the acidic electrolyzed water are carried out step by step, a diaphragm is not needed, and the method is low in toxicity, low in cost and environment-friendly.

A superlattice structure for a thin film solar cell includes superimposed layers of nanocrystals and is configured to generate a flow of electrons across the layers when it is irradiated by a solar radiation. Each of the layers includes an array of nanocrystals which have substantially the same size and shape and the nanocrystals of each of the layers have different size and / or different shape with respect to the nanocrystals of the other layers. The layers are sorted in such an order that the superlattice structure is anisotropic. A thin film solar cell having the superlattice structure and a method for making the superlattice structure is related.

The invention discloses a thin-film solar heating pad which comprises a first transparent bottom electrode, a thin-film battery functional layer and a composite functional layer used for replacing a top electrode, the first transparent bottom electrode and the thin-film battery functional layer sequentially cover the upper surface of a first transparent substrate, the composite functional layer is a transparent conductive heating film, and the first transparent bottom electrode is coupled with one end of a storage battery. The other end of the storage battery is coupled with the transparent conductive heating film through the photovoltaic controller, the positive electrode of the storage battery is coupled with one end of the transparent conductive heating film through the electric control unit, and the negative electrode of the storage battery is coupled with the other end of the transparent conductive heating film. The heating pad has the beneficial effects that the transparent conductive heating film is arranged on the top surface of the functional layer of the thin-film battery to replace a top electrode, and the transparent conductive heating film not only plays a heating role, but also can replace the top electrode of the functional layer of the thin-film battery to carry out electron circulation and form a charging loop, so that the thickness of the heating pad is favorably reduced; the transparent conductive heating film does not influence the light energy capture of the thin-film cell functional layer due to the transparent characteristic of the transparent conductive heating film.

The invention discloses an evaporator, an air conditioner indoor unit and an air conditioner. The evaporator comprises a metal heat exchange tube and a first electrode. An electric connecting part is arranged on the metal heat exchange tube, and the electric connecting part is used for applying a first potential; the first electrode is adjacent to the metal heat exchange tube and is electrically connected with the metal heat exchange tube by making contact with the corrosion medium, the first electrode is used for applying a second potential, and the second potential is higher than the first potential. Therefore, the applied second potential is higher than the first potential, so that the first electrode becomes the anode, and the whole metal heat exchange tube becomes the cathode, the electron loss of the metal heat exchange tube is reduced, the oxidation reaction of the metal heat exchange tube is prevented, and the metal heat exchange tube is effectively prevented from being corroded.

The invention discloses a semiconductor structure and a forming method thereof. The method comprises the following steps: forming a mask structure on a substrate; forming a first opening in the mask structure; at least one second opening is formed in the first opening, the bottom of the second opening is lower than the bottom of the first opening, and the at least one second opening is communicated with the first opening to form an isolation pattern; transferring the isolation pattern into the substrate, and forming an isolation groove in the substrate; and filling the isolation groove to form an isolation structure. In the isolation trench, the depth of the region corresponding to the second opening is greater than the depth of the region corresponding to the non-second opening. And filling the isolation groove, and when the isolation structure is formed, the depth of the isolation structure in a region corresponding to the second opening is greater than the depth of the isolation structure in a region not corresponding to the second opening. When the electrons flow out of the source electrode, the circulation path of the electrons flowing out along the area not corresponding to the second opening is shorter than the circulation path of the electrons flowing out along the area corresponding to the second opening, so that the characteristic on-resistance of the device is reduced.

The utility model provides a special-shaped groove separation gate SIC-MOSFET structure, belonging to the technical field of SiC, the special-shaped groove separation gate SIC-MOSFET structure comprises a groove forming part, a diversion channel part, a semiconductor layer, a source and drain region, a gate, an insulating layer and a heat dissipation part, the groove forming part is a groove formed on an SIC substrate through photoetching and corrosion, and the diversion channel part is arranged on the semiconductor layer. The trench forming part is used for controlling the electron flow velocity, the diversion channel part is connected with the trench forming part and the source and drain regions to form a diversion channel, the semiconductor layer covers the trench forming part and the diversion channel part and is used for forming an electron channel, the source and drain regions are arranged on the two sides of the semiconductor layer, and the semiconductor layer covers the diversion channel part and is used for forming an electron channel. The grid electrode is used for providing electrons and is arranged on the upper layer surface of the groove forming part; the utility model can keep stable work in severe environments such as high temperature, high pressure and the like, and solves the problem of thermal failure.

The invention relates to the technical field of wastewater treatment, in particular to a device for treating organic wastewater by activating persulfate, which comprises an outer barrel, a separation barrel, an outer catalysis barrel, an inner catalysis barrel and a heat source, the heat source is used for activating persulfate on the outer catalytic layer to generate a potential difference between the outer catalytic cylinder and the inner catalytic cylinder, and electrons flow to the inner catalytic cylinder to activate a catalyst on the inner catalytic cylinder; the barrel cavity is divided into the outer activation area and the inner oxidation area which are communicated with each other by the separation barrel, so that direct contact between to-be-treated sewage and an oxidizing agent can be avoided, contact between corresponding free radicals and to-be-treated organic matters is avoided, generation of corresponding by-products is reduced, the utilization rate of activation electrons is increased, and the service life of the device is prolonged. And the persulfate is directly heated and is not diluted after entering the outer activation area, so that the electron generation efficiency is improved, the utilization rate of the persulfate is improved, a heat source only needs to heat a small amount of persulfate, and the energy consumption is saved.

A memory device includes a substrate, a capacitor structure, a support layer, and a conductive structure. The capacitor structure is over the substrate. The capacitor structure comprises a lower electrode, a capacitor dielectric layer and an upper electrode. The capacitor dielectric layer is over the lower electrode. The upper electrode is over the capacitor dielectric layer. The support layer is over the substrate and is in contact with an outer surface of the lower electrode of the capacitor structure. The conductive structure contacts the capacitor structure. The conductive structure includes a first epitaxial layer, a second epitaxial layer and a third epitaxial layer. The first epitaxial layer is arranged above the upper electrode. The second epitaxial layer is over the first epitaxial layer. The third epitaxial layer is over the second epitaxial layer. The conductive structure of the memory element may have a lower total resistance while minimizing discontinuity at the interface and improving the electron flow path.

The invention aims to overcome the defects of a traditional microbial fuel cell (MFC), and provides a built-in biological carrier cage tube type microbial fuel cell device, namely a novel microbial fuel cell device in which a tubular reactor is coupled with the MFC. The built-in mesh cage type device is filled with macroporous adsorption resin serving as a biological carrier, when wastewater passes through, a biological membrane is formed on the surface of the built-in mesh cage type device so as to degrade organic pollutants and generate electrons and protons, the electrons are collected by a current collector and then flow to a cathode to form current, and the protons are transmitted to the cathode to be subjected to reduction reaction. The device structure main body can be formed by connecting a plurality of single-tube type MFC reactor units in series or in parallel, the device structure main body can be flexibly adjusted according to the actual application scale, and the parallel combination adopts U-shaped joints for connection. A single MFC unit has a specific structure and has a unique design of separation of an anode, a cathode and a carrier cage, and a biological carrier, namely macroporous adsorption resin, is stored in the carrier cage. Flanges are mounted at the head and tail of the MFC, so that maintenance operation is facilitated. According to the design, a plug flow reactor model is adopted, high efficiency and accuracy are ensured, accurate control and optimization of the reaction process are realized, the sewage treatment efficiency and effect are improved, and more thorough purification treatment and energy recovery are realized.

An apparatus has a current spreading base with an n-contact. The current spreading base has a small n-type resistivity to promote lateral electron flow. A current spreading cap is on top of the current spreading base. The current spreading cap has a large n-type resistivity to suppress vertical electron flow and promote lateral electron flow. An active region is on top of the current spreading cap. A p-type structure is on top of the active region with a p-contact. Sheet resistance of the current spreading base is experimentally established, the half width xF of a mesa is selected and the current spreading cap thickness hc is selected to collectively promote uniform current injection into the active region.

The invention discloses a mercury form analysis system in the technical field of mercury form analysis. The mercury form analysis system comprises a trapping pipe (containing argon and Tenax filler), a pretreatment device, an automatic sample injector and a mercury form analyzer. The trapping tube receives the sample from which the interferent is removed. The mercury form analyzer comprises a shell, a first controller, a power supply and the like, and the thermal desorption module fixes a trapping pipe by using a first spiral nickel heating wire and is connected with the gas chromatographic separation unit through a gas guide pipe. The pyrolysis module comprises a quartz tube and a second spiral nickel heating wire, and is connected with the gas chromatographic separation unit and the cold atomic fluorescence detector. The first spiral nickel heating wire, the electronic flowmeter, the first electromagnetic valve and the like are all connected with a power source and are in electric signal connection with the first controller through the PWM control circuit. The first controller is used for controlling the operation of the gas chromatography separation unit and the cold atomic fluorescence detector and the heating temperature of the heating wire. The system can analyze the mercury form in the sample with high precision and high sensitivity.

The invention belongs to the technical field of catalysts, and discloses a C2N coated sulfurized zero-valent iron catalyst and a preparation method and application thereof. The catalyst comprises C2N and sulfurized zero-valent iron, and the C2N wraps the surface of the sulfurized zero-valent iron. The method has the advantages that (1) the surface of the sulfurized zero-valent iron is coated with a layer of two-dimensional material C2N, electrons in the zero-valent iron are accelerated to flow to the surface and are in better contact with an oxidant PDS, so that the activation efficiency of persulfate is greatly improved, and chlorinated organic pollutants in underground water are efficiently removed; through the vapor deposition process of C2N precursor pyrolysis, a uniform and ultrathin C2N layer can be formed on the surface of S-ZVI, strong chemical bonding is formed between C2N and the surface of S-ZVI, and an efficient electron conduction channel is constructed. The structural design is beneficial to accelerating migration of electrons in the S-ZVI to the surface, and the activation efficiency of PDS is improved.

The present invention relates to a chemical reaction prediction system, a control method thereof, and a learning method for a chemical reaction prediction system. More specifically, the present invention relates to a chemical reaction prediction system that performs forward reaction prediction based on electron flow, a control method thereof, and a learning method for a chemical reaction prediction system.

The invention relates to a semiconductor device and a preparation method thereof. The semiconductor device comprises a substrate; an epitaxial substrate is formed on the surface of the substrate; the gate structures are arranged on the surface of the epitaxial substrate and the surface of the substrate, and the gate structures are located on the surface and the side wall of the epitaxial substrate. Compared with the prior art, in the structure of the semiconductor device, the circulation area of the electron channel is larger, more electrons can circulate, the current is increased, and the performance of the semiconductor device is improved.

An active low-e transparent structure (1), in particular for building-integrated photovoltaics applications, comprising a transparent substrate (70) on which at least a first layered structure (20) is arranged; said layered structure (20) comprises: a superlattice film (80) consisting of a superlattice structure (10) sandwiched between a first dielectric layer (81) and a second dielectric layer (82) and two transparent conductor layers (91, 92), between which said superlattice film (80) is sandwiched; Said superlattice structure (10) comprises a plurality of superimposed layers of nanocrystals and is configured to generate a flow of electrons across said layers when it is irradiated by solar radiation (S).