454 results about "Electron flow" patented technology

The present invention relates to a method of forming a quantum wire gate device. The method includes patterning a first oxide upon a substrate. Preferably the first oxide pattern is precisely and uniformly spaced to maximize quantum wire numbers per unit area. The method continues by forming a first nitride spacer mask upon the first oxide and by forming a first oxide spacer mask upon the first nitride spacer mask. Thereafter, the method continues by forming a second nitride spacer mask upon the first oxide spacer mask and by forming a plurality of channels in the substrate that are aligned to the second nitride spacer mask. A dielectric is formed upon the channel length and the method continues by forming a gate layer over the plurality of channels. Because of the inventive method and the starting scale, each of the plurality of channels is narrower than the mean free path of semiconductive electron flow therein.

The invention discloses a rotary friction power generator, a voltage stabilization output circuit and a power supply device. The rotary friction power generator comprises two electrode units which are arranged in the same plane in a spaced mode and a first component which is alternately in contact with the two electrode units. Under the action of external mechanical energy, friction static electricity carried by the first component is alternately in contact with the two electrode units along with rotation of the first component, then the induction potential difference between the two electrode units is alternately changed, a drive electron flows through an external circuit, and then alternating-current signals are formed to be output. According to the rotary friction power generator, a nanostructure layer is not needed to be arranged on the friction surface, and milliwatt-level power output density per square centimeter can be achieved.

A device is described that can be used to treat acne and certain skin defects quickly, accurately, and economically by the controlled application of NON-radiofrequency electrical energy. This economical hand-held device is to be used by patients alone or with under the consultation of a physician. Spot application of the tip by the patient for only seconds with or without a conductive gel or liquid adjunct allows electrical energy access below the surface of the skin without creating significant epidermal damage. This electron flow through the base of the lesion to be treated unique to this device; in the instant invention, the electron flow is diametric across the tip dimensions between the electroconductive tip elements, but taking the path of least resistance, that being through the depth of the acne lesion to be treated. The invention also pertains to attendant methods for enhancing the energetic effects of the electrical delivery device via concurrent external application of organic and inorganic, chemicals and materials.

A Hall field plasma accelerator with closed electron drift includes a composite anode including a housing with inner and outer walls which form an outer anode and an inner anode forming inner and outer distribution zones; the housing is electrically conductive and has an upstream end and an exit port electrically insulated from the housing; the composite anode includes an input distribution system for introducing plasma gas into the distribution zones; poles establish a magnetic field across the exit port and a cathode establishes an electron flow through the magnetic field toward the composite anode and creates an electric field through the exit port; the electrons ionize the plasma gas that is accelerated by the electric field through the exit port.

A silicon nanoparticle transistor and transistor memory device. The transistor of the invention has silicon nanoparticles, dimensioned on the order of 1 nm, in a gate area of a field effect transistor. The resulting transistor is a transistor in which single electron flow controls operation of the transistor. Room temperature operation is possible with the novel transistor structure by radiation assistance, with radiation being directed toward the silicon nanoparticles to create necessary holes in the quantum structure for the flow of an electron. The transistor of the invention also forms the basis for a memory device. The device is a flash memory device which will store electrical charge instead of magnetic effects.

Methods of treating or suppressing oxidative stress diseases and symptoms related to oxidative stress affecting normal electron flow in the cells or caused by reactive oxygen species with redox-active therapeutics. Use of redox-active therapeutics for the reduction, suppression or treatment of oxidative stress induced by chemical agents such as contrast agents and other nephrotoxic agents, by radiation exposure, and by disruptions in the transport of oxygen to tissues, is disclosed.

A semiconductor device is formed by a first layer 32 composed of AlGaN, a second layer 42 composed of GaN, a gate electrode 34, a source electrode 38, and a drain electrode 28. The first layer 32 has a region 32a formed between the gate electrode 34 and the second layer 42. A channel is formed in the vicinity of the boundary 24 of the first layer 32 and the second layer 42. The second layer 42 has p-type conductivity and is in contact with the source electrode 38.

When electrons flow in the channel, the electrons collide with surrounding atoms, and holes are formed. If holes are accumulated inside the semiconductor device, the presence of the accumulated holes causes dielectric breakdown. In the semiconductor device of the invention, holes are discharged to the outside of the device thorough the second layer 42 and the source electrode 38, and accumulation of holes can be prevented.

Characteristics of a nonvolatile semiconductor memory device are improved. The memory cell comprises: an ONO film constituted by a silicon nitride film SIN for accumulating charge and by oxide films BOTOX and TOPOX disposed thereon and thereunder; a memory gate electrode MG disposed at an upper portion thereof; a select gate electrode SG disposed at a side portion thereof through the ONO film; a gate oxide film SGOX disposed thereunder. By applying a potential to a select gate electrode SG of a memory cell having a source region MS and a drain region MD and to the source region MS and by accelerating electrons flowing in a channel through a high electric field produced between a channel end of the select transistor and an end of an n-type doped region ME disposed under the memory gate electrode MG, hot holes are generated by impact ionization, and the hot holes are injected into a silicon nitride film SIN by a negative potential applied to the memory gate electrode MG, and thereby an erase operation is performed.

A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination.

Disclosed herein are embodiments of a method of forming a complementary metal oxide semiconductor (CMOS) device that has at least one high aspect ratio gate structure with a void-free and seam-free metal gate conductor layer positioned on top of a relatively thin high-k gate dielectric layer. These method embodiments incorporate a gate replacement strategy that uses an electroplating process to fill, from the bottom upward, a high-aspect ratio gate stack opening with a metal gate conductor layer. The source of electrons for the electroplating process is a current passed directly through the back side of the substrate. This eliminates the need for a seed layer and ensures that the metal gate conductor layer will be formed without voids or seams. Furthermore, depending upon the embodiment, the electroplating process is performed under illumination to enhance electron flow to a given area (i.e., to enhance plating) or in darkness to prevent electron flow to a given area (i.e., to prevent plating).

The invention belongs to the technical field of water electrolysis, and particularly relates to a two-step method and device for producing hydrogen through water electrolysis on the basis of a three-electrode system. According to the device, an electrolytic bath comprises a hydrogen evolution catalysis electrode, an oxygen evolution catalysis electrode and a nickel hydroxide electrode. According to the method, water molecules are electrochemically reduced to hydrogen gas on the surface of the hydrogen evolution catalysis electrode, a Ni(OH)2 electrode is electrochemically oxidized to form a NiOOH electrode at the same time, and electrons flow to the hydrogen evolution catalysis electrode from the Ni(OH)2 electrode through an external circuit in the process; the NiOOH electrode is electrochemically reduced to the Ni(OH)2 electrode, hydroxyl ions are electrochemically oxidized to form oxygen gas on the surface of the oxygen evolution catalysis electrode, and the electrons flow to the NiOOH electrode from the oxygen evolution catalysis electrode through the external circuit in the process. According to the device and the method, the hydrogen production step and the oxygen production step which are synchronous in conventional water electrolysis are effectively separated, the high-purity hydrogen gas can be prepared without any diaphragms through the electrolysis device because the hydrogen production step and the oxygen production step are completely separated, and therefore the cost of producing the hydrogen through water electrolysis is lowered further.

The invention discloses a method and a device for simultaneously carrying out wastewater treatment and power generation by using a photocatalysis associated microbial fuel cell technology. The device takes conductive glass coated with an n-type semiconductor photocatalyst film as an outside wall of a cathode chamber and takes conductive glass coated with an n-type semiconductor photocatalyst film as an outside wall of an anode chamber, a conductive filler respectively connected on the outside walls of the cathode chamber and the anode chamber is used as an electrode of a microbial fuel cell. The conductive filler is a carbon fiber rope for microbial growth. Denitrifying bacteria and nitrifying bacteria are respectively cultivated at the cathode and anode of the microbial fuel cell, and mainly used for the degradation of organic matters and the removal of ammonia nitrogen. Under the irradiation of ultraviolet light, electrons flow from the anode to the cathode, so that the anode has strong oxidability, and the cathode has strong reducibility. In the invention, the functions of microbial fuel cells and a photocatalysis technology are mutually associated, so that the wastewater treatment cost is low, and the generating capacity is large.

An organic electroluminescence device is disclosed. The device includes an anode, a cathode formed above the anode, a light-emitting layer containing an organic light-emitting material that is formed between the anode and the cathode, a hole-injecting layer on the anode that includes a hole-transporting material and an acceptor, and an electron-transporting suppressing stack between the hole-injecting layer and the light-emitting layer. The electron-transporting suppressing stack consists of multiple carrier-transporting layers, and forms energy barriers relative to electrons flowing from the light-emitting layer to the hole-injecting layer.

Methods of treating or suppressing oxidative stress disorders affecting normal electron flow in the cells, including mitochondrial diseases, impaired energy processing disorders, neurodegenerative diseases, diseases of aging and diseases caused by reactive oxygen species are disclosed, as well as compounds useful in the methods of the invention, such as such as catechol or ortho-quinone derivatives of Formula (I).

A magnetic resonance imaging apparatus generates an MR signal from an object to be examined by applying a gradient field pulse generated by a gradient field coil and a high-frequency magnetic field pulse generated by a high-frequency coil to the object in a static field generated by a static field magnet, and reconstructs an image on the basis of the MR signal. The gradient field coil is housed in a sealed vessel. Numerous techniques are disclosed to reduce adverse effects of vibrations caused by rapidly changing gradient coil currents. By judicious use of non-conducting connection components between gantry components at some joint portions requiring electrical contact and at some other portions not requiring electrical contact, the generation of adverse B waves, and/or induced electron flow in response to physical vibration between joint components can be reduced.

An apparatus and method for controlling electron flow within a plasma to produce a controlled electron beam is provided. A plasma is formed between a cathode and an acceleration anode. A control anode is connected to the plasma and to the acceleration anode via a switch. If the switch is open, the ions from the plasma flow to the cathode and plasma electrons flow to the acceleration anode. With the acceleration anode suitably transparent and negatively biased with a DC high voltage source, the electrons flowing from the plasma are accelerated to form an electron beam. If the switch is closed, the ions still flow to the cathode but the electrons flow to the control anode rather than the acceleration anode. Consequently, the electron beam is turned off, but the plasma is unaffected. By controlling the opening and closing of the switch, a controlled pulsed electron beam can be generated.

Embodiments of the invention provide methods and apparatuses for enhancing electron flow within a battery, such as a lead-acid battery. In one embodiment, a battery separator may include a conductive surface or layer upon which electrons may flow. The battery separator may include a fiber mat that includes a plurality of electrically insulative fibers. The battery separator may be positioned between electrodes of the battery to electrically insulate the electrodes. The battery separator may also include a conductive material disposed on at least one surface of the fiber mat. The conductive material may contact an electrode of the battery and may have an electrical conductivity that enables electron flow on the surface of the fiber mat.

A sterilization system for PET containers and bottles including at least one electron flow generator 1, a scan gun 2 and at least one target 4 preferably made of heavy metal, so that when a part of the electron radiation hits said target a reflected X ray radiation is generated, which contributes to the sterilization of the containers. A certain amount of liquid or gaseous oxygen which upon collision with the electron radiation is converted to ozone is also exposed to the radiation, thus further contributing to the sterilization.

The invention discloses a novel nano generator constructed by arrays of semiconductor nanorods, nanowires or nanobelts of ZnO, Ga2O3 or SnO2 and the like with inverse piezoelectric characteristic and electric polarization characteristic. The system comprises two nano arrays A and B, the end parts of the nano arrays are mutually contacted and oppositely placed, the nano array A consists of semiconductor nanowires with inverse piezoelectric characteristic and electric polarization characteristic; and the nano array B consists of metal nanowires which have a Schottky contact characteristic when the metal nanowires are contacted with the nano array A or semiconductor nanowires coated with metal films. The nanowires in the nano arrays generate inverse piezoelectric and electric polarization phenomenon by utilizing various high-frequency alternating electromagnetic signals and electromagnetic microwave radiation signals in the space, and certain positive and negative charge accumulation is formed on the surfaces of the nanowires so as to directly convert the various high-frequency alternating electromagnetic signals and electromagnetic microwave radiation signals in the space into electrical energy to be output in a form of electron flow to drive or control the loads such as an external nanodevice or a micro-electro-mechanical system and the like.