11 results about "Electron flux" patented technology

The invention provides a carbon emission management monitoring method and device for rice planting in a cold region, and relates to the technical field of carbon emission management monitoring. Vertical three-layer parameters of a soil profile, namely the surface methane concentration, the middle oxidation-reduction potential and the deep organic acid concentration, are collected; the method comprises the following steps: mapping a middle-layer potential into an inhibition coefficient according to a microbial electrochemical principle, further calculating potential uplink electron flux and actual downlink electron sedimentation intensity, identifying an electron transport chain breakage risk through a residual error of the potential uplink electron flux and the actual downlink electron sedimentation intensity, and carrying out nonlinear fusion on the electron transport residual error and environment weights of all layers by adopting a p-norm model. Through the risk amplification coefficient, the superlinear conduction of the local risk to the whole system is realized, the dominant risk layer is accurately positioned based on the comprehensive weight, the differential field management strategy is automatically generated, and finally the closed-loop intelligent management normal form is constructed, and the accurate control of the carbon emission based on the mechanism model is realized.

The invention provides a GEO electric propulsion satellite orbital transfer process solar cell radiation effect rapid evaluation method, which comprises the following steps that: firstly, a solar cell radiation damage space distribution database is constructed through space radiation effect analysis software, and the database comprises daily average equivalent 1MeV electron flux distribution data under different orbit heights, inclination angles and cover glass thicknesses; generating satellite space track data according to an electric propulsion orbital transfer strategy; counting accumulated operation time of the satellite in each height and dip angle interval according to a preset interval; and finally, multiplying and accumulating the daily average equivalent 1MeV electron flux corresponding to each interval by the accumulated running time to quickly obtain the accumulated equivalent 1MeV electron flux in the whole orbital transfer process. Therefore, the problem of long calculation time consumption of a traditional method is solved, and rapid evaluation support can be provided for radiation mitigation optimization design of the orbital transfer strategy.

A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.

The embodiment of the application discloses a negative electrode and a preparation method thereof and an electric device. The negative electrode comprises a current collector and an active material layer arranged on at least one side of the current collector. The active material layer comprises a main body area and a thinned area at an end. The negative electrode further comprises a composite structure layer covering and adhering to the surface of the thinned area. The composite structure layer comprises a conductive enhancement layer and a gradient electrolyte layer which are sequentially combined along the thickness direction of the active material layer and gradually away from the current collector. The gradient electrolyte layer comprises lithium salt. The concentration of the lithium salt in the gradient electrolyte layer linearly increases away from the conductive enhancement layer. The conductive enhancement layer and the gradient electrolyte layer along the thickness direction of the active material layer and gradually away from the current collector are covered and adhered to the thinned area. The charge transport kinetics of the region is optimized, a continuous ion driving force is formed during large-current charging, the ion flux and the electron flux are matched, lithium precipitation is effectively inhibited, the fast-charging capacity retention rate of the battery is improved, and the cost is reduced.

To provide a method for determining performance parameters of an electron multiplier having a series of electron emission surfaces forming an electron multiplication chain.SOLUTION: The method includes the step of: comparing a first electron beam of a first electron emission surface of the electron multiplication chain with a second electron beam of a second electron emission surface of the electron multiplication chain or with a second electron beam of an electron collector of the electron multiplier.SELECTED DRAWING: Figure 1

Apparatus and methods are provided for controlling the uniformity of a plasma formed using a radio frequency (RF) source power component that includes one or more resonant tuning circuits coupled to two or more electrodes disposed within a multi-electrode source component. Improved control of plasma uniformity and reduced system cost are achieved by eliminating multiple RF generators and matchers that individually power the multiple electrodes. Multiple frequencies can also be provided to multiple electrodes at the same time, so that cost can be additionally saved when a multi-frequency RF source assembly is used. Local plasma density and shell voltage over a substrate surface are controlled using segmented electrodes disposed within the processing region of the plasma processing chamber. Ion flux and direction and high energy electron flux toward the substrate are controlled to address the plasma inhomogeneity and overall tilt during semiconductor substrate processing.

The application provides a geosynchronous orbit high-energy electron flux prediction method, a model and a model construction method, and relates to the field of electron flux prediction; the geosynchronous orbit high-energy electron flux prediction method comprises the following steps: constructing a geosynchronous orbit high-energy electron flux prediction model; inputting the following parameters into the geosynchronous orbit high-energy electron flux prediction model: a time point T, spatial coordinates of a spatial point in a radiation belt, and average solar wind speed in a time range of [T-a hours, T-b hours]; calculating high-energy electron flux at the geosynchronous orbit height passing through the spatial point in a quiet period; judging whether the spatial point at the geosynchronous orbit height is in a storm time or not, and outputting high-energy electron flux at the geosynchronous orbit height passing through the spatial point in the quiet period or the storm time. The high-energy electron flux prediction method provided by the application can automatically switch the flux prediction mode in the quiet period or the storm time, and significantly improves the prediction accuracy under different geomagnetic activity conditions.

The application discloses a design method of an RGB filter for low-light-level night vision, and belongs to the technical field of low-light-level night vision imaging. Data acquisition and preprocessing are carried out to obtain a spectral electron flux curve; a filter bandpass curve and process parameters are set; channel performance evaluation is carried out according to the spectral electron flux curve and the process parameters; multi-objective optimization and process adaptation are carried out through a two-step optimization strategy of global search and local fine adjustment; and channel calibration and enhancement are carried out to obtain final RGB filter transmittance data. The application aims to solve the technical problems of low light transmittance efficiency, large channel interference and poor manufacturing feasibility of the RGB filter in a low-light environment; improve total flux, channel energy balance, channel spectral overlap suppression and filter curve manufacturability; and introduce a conditional enhancement strategy for the B channel to make up for the short board of insufficient response of the EBCMOS in the B light band.

The embodiment of the invention discloses a negative electrode, a preparation method thereof and a power utilization device, the negative electrode comprises a current collector and an active material layer arranged on at least one side of the current collector, and the active material layer comprises a main body region and a thinned region located at the end part; the negative electrode further comprises a composite structure layer covering and attached to the surface of the thinned area. The composite structure layer comprises a conductive enhancement layer and a gradient electrolyte layer which are sequentially compounded in the thickness direction of the active substance layer and gradually away from the current collector. The gradient electrolyte layer comprises a lithium salt, and the concentration of the lithium salt in the gradient electrolyte layer is linearly increased along with the distance from the conductive enhancement layer; the conductive enhancement layer and the gradient electrolyte layer which are along the thickness direction of the active material layer and are gradually far away from the current collector cover and fit the thinned region, so that the charge transfer dynamics of the region is synergistically optimized, continuous ion driving force is formed during large-current charging, and the matching of ion flux and electron flux is ensured; therefore, lithium precipitation is effectively inhibited, the fast charge capacity retention ratio of the battery is improved, and meanwhile, the cost is reduced.

A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.

The method for evaluating the damage degree of the spacecraft in the artificial radiation band environment solves the technical problem that in the prior art, the damage effect of the spacecraft penetrating through the artificial radiation band cannot be evaluated, and comprises the following steps that S1, the damage degree of the spacecraft is evaluated according to the source intensity, the source height and the source latitude specified by a user; acquiring an electron flux file matched with the source item condition in the radiation band database; s2, reading the electron flux file, and performing interpolation calculation to obtain an artificial radiation band electron flux environment value; s3, reading flight data of the spacecraft; s4, combining the electron flux of the artificial radiation band in the step S2 with the flight data of the spacecraft in the step S3, and calculating the accumulated electron flux of the artificial radiation band of the spacecraft; and S5, the damage degree is evaluated. According to the method, the artificial radiation band electron flux under the conditions of any radiation source intensity, source height and source latitude can be rapidly given, the accumulated electron flux of the spacecraft is rapidly calculated, and the damage condition of the spacecraft is evaluated.