45 results about "Electron flux" patented technology

Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.

A chemical processing system and a method of using the chemical processing system to treat a substrate with a mono-energetic space-charge neutralized neutral beam-activated chemical process is described. The chemical processing system comprises a first plasma chamber for forming a first plasma at a first plasma potential, and a second plasma chamber for forming a second plasma at a second plasma potential greater than the first plasma potential, wherein the second plasma is formed using electron flux from the first plasma. Further, the chemical processing system comprises a substrate holder configured to position a substrate in the second plasma chamber.

A quantity of electrons that will be used in the ionization event in an FTICR MS is preprogrammed. When the number of electrons produced reaches that number, the electron beam is turned off. This approach assures that the same number of electrons are used for every measurement and eliminates the variations due to fundamental characteristics of the electron sourcere and the variations in temperature due to changing ambient conditions.

A combination of chemical agents reduces reductive stress by limiting the accumulation of high-energy electrons potentially available to the electron transport chain. A method of metabolic uncoupling therapy comprises: analyzing a specific physiologic process involving reductive stress; identifying a plurality of MUT agents that modulate metabolic pathways by influencing electron flux; and formulating a combination of MUT agents that limits the accumulation of high-energy electrons potentially available to the electron transport chain.

Systems and methods include improved techniques for patterning substrates, including improvements to double patterning techniques. Direct current superposition plasma processing is combined with photolithographic patterning techniques. An electron flux or ballistic electron beam from a plasma processing system can induce cross linking in a given photoresist, which alters the photoresist to be resistant to subsequent light exposure and / or developer treatments. Plasma processing is also used to add a protective layer of oxide on exposed surfaces of a first relief pattern, thereby protecting the photoresist from a developing acid. By protecting an initial photoresist relief pattern from developing acid, a second pattern can be applied on and / or between the first photoresist relief pattern thereby doubling an initial pattern or otherwise increasing pattern density. This combined pattern can then be used for subsequent microfabrication such as transferring the combined pattern into one or more underlying layers.

The method of the invention for extracting electrons in a vacuum consists in:making a cathode presenting at least one junction (9) between a metal (7) acting as an electron reservoir and an n-type semiconductor (8) possessing a surface potential barrier with a height of a few tenths of an electron volt, and presenting thickness lying in the range 1 nm to 20 nm;injecting electrons through the metal / semiconductor junction (9) to create a space charge in the semiconductor (8) sufficient to lower the surface potential barrier of the semiconductor to a value that is less than or equal to 1 eV relative to the Fermi level of the metal (7); andusing the bias source creating an electric field in the vacuum to control the height of the surface potential barrier (Vp) of the n-type semiconductor in order to control the emission of the electron flux towards the anode.

A substrate processing system includes a processing chamber (10), an electrically floating substrate holder (12) positioned in the chamber, a gas source (54) for supplying a process gas to the chamber, at least one ion source (20) located in the chamber, and a power source (19b) for energizing the ion source by positively biasing the anode (40) and negatively biasing the cathode (22) in a train of pulses of selectably variable duty cycle and magnitude to maintain a selected time averaged current, the bias in each instance being relative to the chamber. The ion source (20) ionizes the process gas producing ions for processing a substrate disposed on the floating substrate holder (12) in the chamber. The floating substrate is biased in accord with the net charge thereon as controlled by the energetic electron flux. One embodiment includes two such ion sources (22, 42). In this case, the power source energizes the first and second anodes (30, 40) and the cathodes (22, 42) in a time multiplexed manner, such that only one of the first or second ion sources is energized at any time and interactions between ion sources are eliminated.

A plasma generator for an ion implanter is provided. The plasma generator includes an ionization chamber for forming a plasma that is adapted to generate a plurality of ions and a plurality of electrons. An interior surface of the ionization chamber is exposed to the plasma and constructed from a first non-metallic material. The plasma generator also includes a thermionic emitter including at least one surface exposed to the plasma. The thermionic emitter is constructed from a second non-metallic material. The plasma generator further includes an exit aperture for extracting at least one of the plurality of ions or the plurality of electrons from the ionization chamber to form at least one of an ion beam or an electron flux. The ion beam or the electron flux comprises substantially no metal. The first and second non-metallic materials can be the same or different from each other.

The invention provides a charging effect simulation method at a tail region of a spacecraft. The method comprises the following steps: establishing a fitting expression of a polar region precipitated electron spectrum, which is the relation for the variation of aurora electron flux phi with energy E, wherein the relation is expressed through superposition of power law distribution phip (E), maxwellian distribution phim (E) and Gaussian distribution phiG (E), and fitting the polar region precipitated electron spectrum; establishing an ion distribution characteristic spectrum in a background plasma environment; testing secondary electron emission spectrums of different surface materials of the spacecraft; performing process simulation of the charging effect at the tail region of the spacecraft by using a Particle-In-Cell (PIC) method based on the three-category spectrum. The method has the advantages that the simulation process is clear, the simulation result conforms to the actual monitored charging situation and the like.

The invention discloses a method for controlling an electrification effect on the surface of a spacecraft in orbit. The method for controlling the electrification effect on the surface of the spacecraft in orbit comprises the steps that firstly, a flux threshold value and a temperature threshold value are obtained based on the relationship between an electron flux and a spacecraft surface potential and the relationship between a plasma temperature and the spacecraft surface potential and according to a potential threshold value borne by the spacecraft surface; and in real-time control, the electron flux and an electron temperature are monitored in real time so that a potential active controller switch can be controlled to achieve the purpose of surface potential control. Since the electronflux and the plasma temperature are observed, whether the spacecraft surface can reach the potential threshold value or not is predicted and the surface potential control is carried out instead of carrying out the surface potential control after electrons and plasmas accumulate on the spacecraft surface to reach the potential threshold value, so that the response speed can be improved, and stability and accuracy of active control over spacecraft surface electrification can be improved.

The invention provides a design method of a DFIG-PSS controller based on virtual impedance, and the method comprises the steps: constructing a power grid system containing a doubly-fed induction motor model, combining a power system stabilizer with virtual impedance, and then connecting the combined power system stabilizer and virtual impedance to a rotor side converter, obtaining the relation between the output voltage of the rotor side converter and the rotor current by adopting a stator flux linkage directional vector control technology; obtaining the relation between the stator current and the output power of the stator according to the relation among the stator voltage, the electron flux linkage and the electron current; then, according to the relationship between the output voltage of the rotor side converter and the rotor current and the relationship between the stator current and the output power of the stator, obtaining the relationship between the parameter of the power system stabilizer-virtual impedance and the output power of the stator; and finally, adjusting the output power of the stator by changing the parameters of the stabilizer-virtual impedance of the power system, thereby influencing the damping characteristic of the power grid system. The low-frequency oscillation characteristic of the wind power system can be improved.

A control circuit (20) for controlling electrostatic discharge in an electric component includes a heater (28) that is thermally coupled to the component. A sensor (30) is used for sensing a sensed condition. A controller is coupled to the heater and the sensor. The controller (24) heats the component in response to the sensed condition. The sensor (30) may include an electron flux level near the component or a surface potential of the component itself.

Embodiments include a chemical processing apparatus and method of using the chemical processing apparatus to treat a substrate with a mono-energetic space-charge neutralized neutral beam-activated chemical process which is comprised of a substantially anisotropic beam of neutral particles. The chemical processing apparatus comprises a first plasma chamber for forming a first plasma at a first plasma potential, and a second plasma chamber for forming a second plasma at a second plasma potential greater than the first plasma potential, wherein the second plasma is formed using electron flux from the first plasma. Further, the chemical processing apparatus comprises an ungrounded dielectric (insulator) neutralizer grid configured to expose a substrate in the second plasma chamber to the substantially anisotropic beam of neutral particles traveling from the neutralizer grid.

The present invention provides a prediction method and device of a high-energy electron burst event, and a storage medium and device. The prediction method comprises the following steps: extracting high-energy electron daily flux FT and medium-energy electron index data IT0 of a day; calculating high-energy electron flux FT+1 of a second day according to the high-energy electron daily flux FT andthe medium-energy electron index data IT0; predicting whether a high-energy electron burst event occurs according to the calculated high-energy electron flux FT+1 of the second day; predicting that the high-energy electron burst event occurs on the second day if FT+1 is greater than or equal to a first threshold of the high-energy electron daily flux generated by the high-energy electron burst; otherwise, predicting that the high-energy electron burst event does not occur on the second day. The technical solution recorded in the present invention improves the accuracy rate of prediction of thehigh-energy electron burst event in a geosynchronous orbit, and accurately predicts the high-energy electron flux of the geosynchronous orbit and especially the occurrence time of the high-energy electron burst event, so that not only a data basis is provided for the protection of service satellites of the geosynchronous orbit, but also the reference is provided for on-orbit protection of other satellites operating in a region.

An embodiment of the invention provides a radiation contrast-based satellite detection performance assessment method. The method comprises the steps of converting an electron flux output by a detectorinto an equivalent object, and calculating an image signal-noise ratio in combination with system noises according to the equivalent object; and according to the image signal-noise ratio, performingcalculation to obtain a minimum distinguishable radiation contrast model, and by adopting the minimum distinguishable radiation contrast model, assessing satellite detection performance. Embodiments of the invention furthermore provide a radiation contrast-based satellite detection performance assessment apparatus, an active interaction apparatus and a non transient readable memory, which are usedfor realizing the method. The satellite detection performance can be effectively assessed under the condition of no human eye intervention.

A process for coating a substrate comprising condensing a radiation curable material on a substrate and curing it using an electron flux 6′ with energy between 6.5 eV and 300 eV. The electron flux 6′ is directed at the substrate (2) either simultaneously or sequentially with delivery of the curable material (5′). Curing is preferably initiated spatially and temporally concurrently with delivery of the material to the substrate. The electron flux is preferably generated using a low pressure gas plasma source with a driving voltage negative relative to the local voltage conditions. The low pressure gas plasma (6′) is preferably magnetically enhanced and, for example, incorporates a magnetron.

The invention discloses a fault warning method based on a spacecraft in-orbit internal charged effect dynamic library table. An on-orbit satellite internal charged abnormal failure is used as a starting point, high energy electronic data provided by satellite-borne space environment load is used as a driving source, and a spacecraft internal charged effect matching database is generated. The spacecraft internal charged effect matching database mainly comprises a dynamic high energy electron flux library table and a relevance library table of dynamic high energy electron flux and satellite internal charged abnormality. The spacecraft in-orbit is monitored to provide support for business of relevant departments such as internal charged effect risk identification, warning and forecasting andthe like based on the relevance library table, and a wide application prospect is achieved.

The invention discloses an empirical mode decomposition-based establishment method for an hour prediction model of energetic electron flux. The method includes the following steps: step 1. simplifyinga time coefficient of the energetic electron flux by an empirical orthogonal function; step 2. performing reconstruction expansion on the empirical orthogonal function of the time coefficient of theenergetic electron flux by employing a first order primary function of the empirical orthogonal function; step 3. obtaining the time coefficient of the electron flux by using the known electron flux and primary function; step 4, selecting an input parameter; step 5. decomposing the time coefficient by using an empirical mode decomposition EMD algorithm; and step 6. performing fitting on each of components of the time coefficient. The method overcomes the prediction difficulty of the energetic electron flux caused by non-stationary, a decomposed data sequence is stronger in regularity than an original data sequence of the time coefficient, and the prediction accuracy can be significantly improved.

A method for evaluating the risk of charging effect on the surface of a spacecraft in-orbit surface which is based on the real-time monitoring of electron temperature and electron flux in the space environment of spacecraft in orbit, real-time intervention (active potential control) and emergency plan (shutdown of sensitive stand-alone) can be carried out to avoid serious failure caused by surfacecharging effect of spacecraft, which is of great significance to improve the safe and reliable operation of spacecraft in orbit. The in-orbit surface charging effect risk evaluation methods can be made according to different types of spacecraft, different orbit spacecraft, or different sensitive parts of spacecraft (such as solar cell array, etc.), so that the method has wider application range.

The invention relates to a method for treating a gaseous medium containing contaminating particles, such as microorganisms, bacteria, or viruses. The inventive method consists of generating an accelerated electron flux; the electron flux interacting with the gaseous medium, whereby the particles are broken or destroyed by ionization as a result of the interaction and the gaseous medium is sterilized. The invention can be used to treat the atmospheres of refrigerated vessels in refrigerators.

The invention provides a method for establishing a SOFC / SOEC electrode microstructure electrochemical model. The method comprises the following steps: identifying a three-phase boundary line at the intersection of yttrium oxide-stabilized zirconium oxide, nickel and a gaseous phase in an anode microstructure grid unit; establishing a coupling relationship among gas, ion and electron diffusion equations; applying a constant ion and electron flux boundary condition to the boundary of a current collector and an electrolyte, applying a constant gas concentration boundary condition near the current collector, and finally, using a separated solver to carry out steady-state solving to obtain the electrochemical characteristics of the microelectrode. By adopting the technical scheme, the electrochemical model with fully coupled gas, ion and electron diffusion equations is established, and a series of simulation results such as electrochemical potential distribution, ion current and electron current distribution, gas concentration distribution condition and relation between overpotential and input current density in the YSZ can be obtained according to the calculation result of the model; and the invention has certain guiding significance on electrode structure optimization and engineering design.

A system and method for improving the survivability of space systems following a High Altitude Nuclear Explosion (HANE) incident resulting in energetic electrons being trapped in the inner radiation belt of Earth is disclosed. The ULF electromagnetic waves is generated by space or ground based transmitters and the frequency range is selected such that the injected waves are in gyrofrequency resonance with trapped energetic particles. The Radiation Belt Remediation (RBR) depends on the wave-number of the injected waves and the wave-number of the injected waves increases along their propagation path when they approach the cyclotron frequency of the dominant or minority ions 0+, He+ and H+.

The invention provides a satellite internal medium deep charging risk assessment and monitoring method, which comprises the following steps of: estimating a high-energy electron spectrum parameter through actually measured electron flux and a common standard energy value, dividing 24 hours into a plurality of preset moments, acquiring energy of high-energy electrons of two different energy channels at the preset moments, and calculating to obtain surface electron flux; obtaining the shielding thickness of the internal medium, calculating the lower limit Emin of energy for deposition according to the statistical relationship between the maximum range of electrons and energy, calculating the critical thickness of the internal medium for electron deposition, and calculating the upper limit Emax of energy for deposition according to the conditional inequality of the critical thickness and the upper limit of energy, and acquiring the area S of the satellite circuit board and the resistance R of the internal medium, and calculating a voltage value U of a predetermined level according to the area S, the resistance R, the lower energy limit Emin, the upper energy limit Emax, the voltage value and a voltage value formula. Effective assessment and continuous monitoring of the satellite deep charging risk are realized, and the assessment is more accurate and efficient.