Plasma processing system and method

A processing system and plasma technology, applied in the field of plasma processing systems and methods, can solve the problems that are difficult to meet, increase the Arial density of record information, etc.

Inactive Publication Date: 2003-02-12
INTEVAC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, it has proven difficult to achieve films that meet the specifications required for protective films such as those used in computer data storage applications on hard disks. The thinner the coating, the closer the head is to the magnetic region on the surface of the hard disk, which increases the Arial density of the recorded information.

Method used

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  • Plasma processing system and method
  • Plasma processing system and method
  • Plasma processing system and method

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Embodiment Construction

[0029] The invention is described below in the context of an application for the symmetrical deposition of a DLC protective coating on opposite sides of a planar substrate. This application has been published in the aforementioned co-pending application. This application is typical of other plasma processes and geometries in which the potential of the workpiece is established according to the invention, for which purpose the workpiece is not in physical contact with the power source.

[0030] see now figure 1 , the ion source 20 includes an anode 30 and an electron source 22 . The electron source 22 is connected to the electron source bias power supply 19a. The ion source 220 includes an anode 40 and an electron source 42 located close to the anode 40 . The electron source bias power supply 19 b is connected to the electron source 42 . Depending on the choice of electron source, the electron source power supply (not shown) may need to stimulate the generation of electrons ...

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Abstract

A substrate processing system includes a processing chamber (10), an electrically floating substrate holder (12) positioned in the chamber, a gas source (54) for supplying a process gas to the chamber, at least one ion source (20) located in the chamber, and a power source (19b) for energizing the ion source by positively biasing the anode (40) and negatively biasing the cathode (22) in a train of pulses of selectably variable duty cycle and magnitude to maintain a selected time averaged current, the bias in each instance being relative to the chamber. The ion source (20) ionizes the process gas producing ions for processing a substrate disposed on the floating substrate holder (12) in the chamber. The floating substrate is biased in accord with the net charge thereon as controlled by the energetic electron flux. One embodiment includes two such ion sources (22, 42). In this case, the power source energizes the first and second anodes (30, 40) and the cathodes (22, 42) in a time multiplexed manner, such that only one of the first or second ion sources is energized at any time and interactions between ion sources are eliminated.

Description

[0001] This application is a continuation of pending application Serial No. 09 / 235,943, filed 01 / 22 / 99, on pending application Serial No. 09 / 076,971 filed May 13, 1998 (title for: "Processing System with Dual Ion Source"), both co-pending applications are hereby incorporated by reference. field of invention [0002] The present invention relates to systems and methods for machining electrically floating substrates on one or both sides by generated ion-generated plasma, and more particularly, to machining systems and methods for controllable treatment of substrate surfaces. Background of the invention [0003] Industrial plasma sources are used for the controlled deposition and etching of surfaces and are widely used in industrial applications, especially semiconductor, optical and magnetic thin film processing. Plasmas formed by these sources produce reactive neutral and ionic forms that can chemically and / or physically interact with surfaces to deposit or remove material. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46C23C16/26C23C16/50C23C16/513H01J37/317H01J37/32
CPCH01J37/3233H01J37/32009H01J2237/0822H01J2237/08C23C16/513H01J37/3178C23C16/50C23C16/26H01J2237/3142H01L21/205
Inventor 特丽·布莱克詹姆斯·H·罗杰斯
Owner INTEVAC
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