Gallium oxide ultraviolet detector based on surface plasmon and preparation method and application thereof

A surface plasmon and ultraviolet detector technology, applied in electrical components, semiconductor devices, final product manufacturing, etc., can solve problems such as poor energy band coupling effect and insignificant gain effect, achieve stable performance and improve response sensitivity , the effect of surface electric field enhancement

Inactive Publication Date: 2019-05-03
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF7 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are currently some studies on the relationship between gold nanoparticles and Ga 2 o 3 Coupling is reported, but the resonant absorption wavelength of gold nanoparticles is usually in the visible region, unlike Ga 2 o

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium oxide ultraviolet detector based on surface plasmon and preparation method and application thereof
  • Gallium oxide ultraviolet detector based on surface plasmon and preparation method and application thereof
  • Gallium oxide ultraviolet detector based on surface plasmon and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] This embodiment is used to illustrate the preparation process of the surface plasmon-based gallium oxide ultraviolet detector of the present invention. The specific preparation method is as follows:

[0053] Prepare the surface plasmon-enhanced Ga 2 o 3 Solar-blind ultraviolet detector, the difference is that step 2) divides three-layer deposition thin film, at first by the method in comparative example 1 step 2) deposition~125nm Ga 2 o 3 Then move the sample into a thermal evaporation system equipped with a high-purity metal Ga source. After the vacuum is pumped to 1E-4Pa, start to apply current to evaporate a 10nm metal Ga layer; finally, deposit a metal Ga layer and a gallium oxide layer. The sample of the layered film was placed in a magnetron sputtering chamber equipped with a gallium oxide target, and a ~125nm gallium oxide film was deposited according to the method of step 2) of Comparative Example 1 again.

Embodiment 2

[0055] The ultraviolet detector of the present invention was prepared in the same manner as in Example 1, except that the thickness of the thermally evaporated metal Ga layer in step 2) was 20 nm.

[0056] The sample obtained after the high-temperature annealing in Step 3) of Example 2 was scraped and ground with a blade to obtain a sample powder. And dipped a small amount of the above sample powder with the copper grid used by TEM, and carried out transmission electron microscope observation on the sample powder on the copper grid, and found the existence of metal gallium nanospheres, such as Figure 4 The two crystal face groups shown, the crystal plane distances are 0.2615nm and 0.2566nm respectively, and the angle between the crystal planes is about 76°, which indicates that these two crystal face groups correspond to the (110) and (021) planes of metal gallium respectively. . In addition, the results of TEM also show that the size of metal gallium nanospheres is about 10...

Embodiment 3

[0058] The ultraviolet detector of the present invention was prepared in the same manner as in Example 1, except that the thickness of the thermally evaporated metal Ga layer in step 2) was 30 nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a gallium oxide ultraviolet detector based on surface plasmon and a preparation method and application thereof. The gallium oxide ultraviolet detector comprises a substrate, a gallium oxide-metal nanosphere composite active layer on the surface of the substrate, and an electrode disposed on the surface of the active layer, wherein the gallium oxide-metal nanosphere compositeactive layer comprises a gallium oxide film layer and metal nanospheres embedded in the gallium oxide film layer, wherein the metal is selected from one or more of a group including Ga, Al, Mg, and Pt. When the photoelectric detector based on the gallium oxide-metal nanosphere composite film is irradiated by solar-blind ultraviolet light, the metal nanospheres generate a plasmon resonance effectso that the metal nanospheres have an enhanced surface electric field and an increased scattering cross section, and generate energy and thermal electron transfer with a Ga2O3 material, thereby greatly enhancing the solar-blind light detection capability of the gallium oxide-based detector and improving the response sensitivity of the detector.

Description

technical field [0001] The invention relates to the technical field of semiconductor photoelectric detection and nanomaterial preparation, in particular to a Ga 2 o 3 Solar-blind ultraviolet detector and its preparation method and application. Background technique [0002] In recent years, ultraviolet detectors have attracted much attention and been deeply studied because of their broad application prospects in many fields such as military affairs, aerospace, biomedicine, and space communications. The solar-blind spectral region is the deep ultraviolet light with a wavelength between 220 and 280nm. The solar radiation in this band can be almost completely absorbed by the earth’s ozone layer, and the background radiation in the atmosphere is close to zero. Therefore, the ultraviolet light in the solar-blind band Optical signal detection usually has extremely low background noise and high sensitivity compared to detection in other wavelength bands. The two unique advantages...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/0304H01L31/18
CPCY02P70/50
Inventor 崔书娟梅增霞梁会力张永晖霍文星杜小龙
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap