81 results about "Mott insulator" patented technology

A method and structure for a field effect transistor (FET) includes a source region, a drain region, a channel region extending between the source region and the drain region, a gate region, and a gate oxide region separating the gate region from other regions of the FET. The channel region is a Mott insulator. The gate oxide region is thicker than the channel region, and the gate oxide region includes a higher dielectric permittivity than the Mott insulator material.

A photovoltaic solar cell is described that, according to one example embodiment, includes a semiconductor light absorbing layer and a dielectric stack on at least one of a front side of the light absorbing layer or a back side of the light absorbing layer. The dielectric stack includes a tunneling dielectric layer being sufficiently thin for charge carriers to tunnel across, and an overlaying dielectric layer being a different material than the overlaying dielectric. The solar cell also includes an electrically conductive contact physically contacting the overlaying dielectric. The electrically conductive contact and the overlaying dielectric together have either a work function suitable for selective collection of electrons that closely matches a conduction band of the light absorbing layer, or a work function suitable for selective collection of holes that closely matches a valence band of the light absorbing layer.

Deterministic generation of nonclassical photons by producing a dilute gas of exciton-polaritons in a solid-state microcavity that includes a periodic array of potential well traps. A photon-exciton frequency detuning is modulated in the microcavity to produce a polaritonic quantum phase transition from a superfluid state to a Mott-insulator state. The nonclassical photons are then generated simultaneously by radiative decay of exciton-polaritons in the microcavity. The nonclassical photons may be indistinguishable single photons, in which case the dilute gas of exciton-polaritons is produced such that on to average there is one polariton per potential well trap. Alternatively, the generated nonclassical photons may be polarization-entangled photon pairs, in which case the dilute gas of exciton-polaritons is produced such that on average there are two polaritons per potential well trap.

A metal capacitor in damascene structures is provided. A first Cu wire and a second Cu wire are located in a first insulator. A first sealing layer is located on the first and the second Cu wires. A second insulator is located on the first sealing layer. A third insulator is located on the second insulator, and acting as an etch stop layer. A first Cu plug and a second Cu plug are located in the first sealing layer, the second insulator and the third insulator. A capacitor is located on the third insulator and the first Cu plug, the capacitor having an upper electrode, a capacitor dielectric and a bottom electrode with the same pattern each other, wherein the bottom electrode is connected to the first Cu wire through the first Cu plug. A conducting wire is located on the third insulator and the second Cu plug, wherein the conducting wire is connected to the second Cu wire through the second Cu plug. A fourth insulator is located on the conducting wire. A fifth insulator with a flat surface is located on the upper electrode, the fourth insulator and the third insulator. A plurality of dual damascene structures including a third plug, a fourth Cu plug, a third Cu wire and a fourth Cu wire are located in the fifth insulator, wherein an upper electrode of the capacitor is connected to the third Cu wire through the third Cu plug, and the conducting wire is connected to the fourth Cu wire through the fourth Cu plug. A second sealing layer is located on the third and fourth Cu wires.

A fast optical (with or without a photonic crystal) switch is fabricated/constructed, utilizing a phase transition material/Mott insulator, activated by either an electrical pulse (a voltage pulse or a current pulse) and/or a light pulse and/or pulses in terahertz (THz) frequency of a suitable field strength and/or hot electrons. The applications of such a fast optical switch for an on-demand optical add-drop subsystem, integrating with (a) a light slowing/light stopping component (based on metamaterials and/or nanoplasmonic structures) and (b) with or without a wavelength converter are also described.

A method is provided for forming a compound semiconductor-on-silicon (Si) wafer with a thermally soft insulator. The method forms a Si substrate, with a thermally soft insulator layer overlying the Si substrate. A silicon oxide layer is formed immediately overlying the thermally soft insulator layer, a top Si layer overlies the silicon oxide, and a lattice mismatch buffer layer overlies the top Si layer. A compound semiconductor layer is formed overlying the lattice mismatch buffer layer. The thermally soft insulator has a liquid phase temperature lower than the liquid phase temperatures of Si and the compound semiconductor. For example, the thermally soft insulator may have a flow temperature in the range of about 500° C. to 900° C., where the flow temperature is greater than the solid phase temperature and less than the liquid phase temperature.

In an electron emitter based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate and an electron supply layer formed on the conductive substrate. The electron supply layer, for example undoped polysilicon, has protrusions formed on its surface. The sharpness and density of protrusions may be controlled. Above the electron supply layer and the protrusions, an insulator may be formed thereby enclosing the protrusions. A top conductive layer may be formed above the insulator. The enclosed protrusions are relatively insensitive to vacuum contamination.

The invention discloses a color ceramic insulator having a phase electricity recognition function. The color ceramic insulator comprises a yellow phase-A insulator, a green phase-B insulator, a red phase-C insulator and a black phase-O insulator which are formed by applying glaze materials with different colors on insulator blanks; the glaze materials consist of 85-90 weight percent of basic glaze material, 10-15 weight percent of coloring agent and a high temperature resistant opacifier in an amount which is 1 to 5 percent based on the total weight of the basic glaze material and the coloring agent; and the insulator is prepared by the steps of uniformly stirring and mixing the basic glaze material, the coloring agent and the high-temperature resistance opacifier to prepare the glaze materials with different colors, applying the glaze materials with different colors on the insulator blanks and firing at high temperature. In the invention, phase electricity is directly distinguished by using the glaze materials with different colors to form the yellow insulator, the green insulator, the red insulator and the black insulator; when the insulator is used on an overhead line or electrical equipment in a power station, the phase electricity can be rapidly, conveniently, accurately and permanently distinguished, so incorrect connection of phase electricity is avoided, the working intensity for wiring is reduced, the operation cost is reduced, the working efficiency is improved, and safety accidents can be prevented.

The invention discloses a Motto transistor and a fabrication method thereof. The method comprises the following steps of fabricating a grid on the surface of a substrate by a coating technique, and sequentially fabricating a grid dielectric layer and a channel layer on the surface of the grid; and fabricating a source and a drain on the surface, which is not covered by the channel layer, of the grid dielectric layer, and completing the fabrication of the Mott transistor with a bottom gird structure; or sequentially fabricating the channel layer and the grid dielectric layer on the surface of the substrate by the coating technique, fabricating the source and the drain on the surface, which is not covered by the grid dielectric layer, of the channel layer, fabricating the grid on the surface of the grid dielectric layer, and completing the fabrication of the Mott transistor with a top grid structure, wherein the channel layer is a Mott insulation body thin film, and the grid dielectric layer is a solid-state oxide proton conductor film. By the method, the full-solid-state structure of the Mott transistor is achieved, thus, the problems of liquid leakage and poor thermal stability are prevented when the fabricated Mott transistor is in Mott conversion, and finally, the problem of relatively poor stability of a traditional Mott transistor is effectively solved.

The invention relates to an insulator ageing test box. The insulator ageing box is mainly applied to insulator ageing tests under the environments of power enterprises, insulator manufacturing companies, colleges and the like, and is particularly used for simulating insulator ageing mechanism research under the extreme environment. The insulator ageing test box comprises a heater, an insulation cavity, an insulation electricity porcelain plate, a gasket, a high-voltage bushing, a high-voltage leading-in electrode, a high-voltage guide rod, a temperature sensor, a temperature testing insulator, a fan, an insulation support, tested insulators, an insulator and a weak shielding signal line. The intelligent insulator ageing test box can apply required voltage to the insulation support supporting the multiple tested insulators through the high-voltage leading-in electrode under the extreme environment for conducting a test, it is ensured that the insulation structure stably runs, weak signals are collected and transmitted at the same time, field control and wireless control over temperature are achieved, and the system intelligence and safety are improved.

The invention relates to a simulation method for researching the influence on the potential and electric field distribution of a rod insulator by suspended sand. The method comprises the steps of in order to research the influence on the along surface potential and electric field distribution of the insulator by suspended sand in the air, drawing a geometric simplified model of the rod insulator in suspended sand environment, and computing and analyzing the potential and electric field distribution of the insulator at different suspended sand states through an electrostatic field finite element method. The simulation results show that suspended electric neutrality sand in the air can slightly distort the along surface potential and electric field of the insulator; after the suspended sand is charged with the same electric quantity, the distortion amplitude of the along surface potential and electric field of the insulator are increased; the influence on the along surface potential and electric field of the insulator by the grain size, the quantity, the charged electric quantity and the polarity of the suspended sand is obvious. The simulation method can properly analyze the influence on the potential and electric field distribution of the rod insulator by the suspended sand.

The invention discloses an optimized composite insulator spraying grading method, which includes steps of taking out an insulator test piece and the whole insulator which are immersed in the purifiedwater for over 96 hours; drying in the shade in the same environment for the same time to obtain the insulator test piece and the whole insulator which have the same hydrophobic state. By using a contact angle method, a static contact angle and a dynamic contact angle of the insulator test piece are measured; a water mist spraying can is applied to spray water to the surface of the whole insulator, the water bead/water membrane state diagram of the insulator surface is observed, the hydrophobic grade is matched with the hydrophobic grade corresponding to the contact angle, thus a correspondingrelationship is set up; according to the corresponding relationship, the hydrophobic grade of the to-be-tested insulator is confirmed. The method is simple in operation, convenient to detect on site,few in experimental instruments, simple in operation, and can provide accurate and reliable hydrophobic grade data reference for artificial pollution test.

The invention relates to an insulator monitoring device used in a power system, in particular to an insulator real-time target recognizing and tracking device based on motion background. The device comprises flying machinery equipment, a ground control system and a communication module, wherein, the flying machinery equipment comprises a flying system and control processing equipment, and the control processing equipment is arranged on the flying system and comprises an imaging detection component and an image signal processing component. The insulator real-time target recognizing and tracking device has the advantages that an image detected by a target insulator is processed on the flying machinery equipment so that insulator detection based on motion analysis is only carried out in a small area in a video window, thus greatly reducing communication transmission time and accelerating the arithmetic operating speed; and in addition, the search range of the target insulator is reduced by means of accurate tracking so that insulator detection and human tracking are almost carried out synchronously, thus achieving the purpose of accurately tracking the insulator and ensuring the detection accuracy and precision of the insulator.

The invention discloses a random nerve pulse generator, which comprises a square wave generator, a memristor, a first resistor, a potential detection system and a wave shaping circuit, The memristor is a mott insulator memristor; One end of the memristor is connected with the square wave generator, and the other end is connected with the first resistor; The other end of the first resistor is grounded; One end of the potential detection system is connected with the memristor and the first resistor, and the other end is connected with the wave shaping circuit. The potential detection system is used for detecting the potential change on the first resistor, and generating and sending a reset signal pulse to the memristor and the square wave pulse signal to the wave shaping circuit after detecting the potential change on the first resistor; And the square wave pulse signal sent by the potential detection system is converted into a nerve-like pulse signal by the wave shaping circuit. The nerve-like pulse generated by the device can be used for simulating a pulse neural network, the circuit complexity problem of a traditional nerve-like pulse generation device is solved while the accuracyof simulating the human brain is improved, and the device has the characteristics of being simple in circuit, low in cost and the like.

The invention provides an anticorona flange for an extra-high voltage post insulator. The flange is made of steel or aluminum alloy and comprises a base and a sleeve vertically arranged on the base. The sleeve is arranged at the end of a knob insulator of the post insulator, and a rubber layer is arranged between the sleeve and the knob insulator. The anticorona flange is characterized in that an anticorona piece is arranged along the circumference of the outer wall of the end of the sleeve. Compared with the prior art, the anticorona flange for the extra-high voltage post insulator has the advantages that corona produced by the insulator under the extra-high voltage is effectively eliminated, and the safe using of the insulator is guaranteed.

A method for manufacturing a post insulator. A core is introduced into a tube of an insulating stiff material while leaving a small circumferential space separating the core and inner walls of the tube. Adhesive is introduced under an overpressure into an interior of the tube and is cured while maintaining an overpressure in the interior of the tube.

The invention discloses a 750 kV lattice composite cross-arm insulator, which comprises three or more cross-arm insulators, wherein the cross-arm insulators are connected into a lattice structure through a connecting and fastening device; the connecting and fastening device comprises three or more web members; adjacent ends of the web members are connected with each other through anchor ears; and the cross-arm insulators pass through the anchor ears. Each cross arm comprises a core rod and an umbrella skirt which is arranged outside the core rod, the two faces of each umbrella skirt are versiera surfaces which are curve-symmetrical, and umbrella bodies are connected with one another in an arc form, so that dirt is hard to accumulate and self-cleaning is easy; moreover, the design structure meets the requirement of a 750kV power transmission line on mechanical intensity, greatly enhances the bearing capability of an insulated cross arm and enhances the structural stability of a tower.

The invention provides a method for detecting interface defects and interface states of a post insulator. The method comprises the following steps of selecting a plurality of space points on a main interface of the post insulator; obtaining a reflection time domain waveform of terahertz of terahertz wave at each space point under the reflection mode; enabling each space point to sequentially forma main pulse, a first echo pulse and a second echo pulse at the main interface, a second interface and a first interface; comparing the reflection time domain waveform of the terahertz at each space point and the reflection time domain waveform of terahertz in a non-defect area, wherein when a third echo pulse occurs or the energy of the echo pulse is increased, the corresponding space point has the interface defect on the detection plane. The detection method has the advantages that on the basis of analysis on the time domain waveform of the terahertz under the reflection mode, the detectionaccuracy is high, the operability is strong, and the feasibility is reliable; the evaluation requirement on the interface state of the polyurethane cast-in-place type composite post insulator can be met.

The invention provides a post insulator. An insulating body and a cross arm on a pole are connected through a first connector; the insulating body and a movable clamp are connected through a second connector; an overhead conductor is fixed by the movable clamp, so that the condition of regular fractures due the adoption of an aluminum binding wire in the prior art is avoided; and the destructive force of the insulating body is greater than a preset constant value and the preset constant value is selected according to a specific application environment, so that the tension requirement of the overhead conductor in a hill terrain on the insulator can be met and the failure rate of the post insulator is reduced.

The invention provides a post insulator and a special probe used for ceramic sleeve ultrasonic electric flaw detection, belonging to the field of electric technique, comprising an insulation shell, an organic glass contact block, a filling material, a piezoelectric crystal, a conductive wire and a coil conductive wire. The conductive wire is led out of the enclosed end of the insulation shell and the other end of the insulation shell is provided with an opening, on which the organic glass contact block is arranged. The piezoelectric crystal and the filling material are sequentially arranged in the insulation shell and closely attached to the organic glass contact block; one side of the organic glass block is a concave surface and the other side thereof is an inclined surface; the piezoelectric crystal is arranged on the inclined surface of the organic glass block; the piezoelectric crystal is connected with the conductive wire by the coil conductive wire. The post insulator and the special probe of the invention can lead the electric detection mechanism to reliably and exactly detect the safety hidden trouble existing in the post insulator and ensure the safe running of the power network during the ultrasonic electric detection process.

The invention provides a high-energy ionic field generation device and an ionic field generation method. The high-energy ionic field generation device comprises an upper insulator protection jacket and a lower insulator protection jacket, wherein an upper insulator is arranged at the axis position of the upper insulator protection jacket, a lower insulator is arranged at the axis position of the lower insulator protection jacket, n negative electrodes are arranged at the peripheries of the insulator protection jackets in an circular or arc way, a positive electrode is arranged at the axis position of each negative electrode, the top end of the positive electrode is fixed on an upper installation seat by a first fixed arm, and the bottom end of the positive electrode is fixed on an lower installation seat by a second fixed arm. The high-energy ionic field generation device has the advantages that the occupancy space of the device can be effectively saved, the volume of the device is shortened, the outer walls of the insulators can be prevented from being covered by a layer of humid dust due to long-term use, so that the insulator failure is prevented, the service lifetime of the device is prolonged, and the long-term safe and stable application of the device is further ensured; and the positive electrodes can adopt metal hard rods and also can adopt metal flexible wires, and thus, the application range of the device is expanded.

The invention relates to the technical field of electro-ceramics, in particular to a post insulator for a 1500V rigid overhead contact line. The post insulator comprises a ceramic body and metal accessories, wherein an upper metal accessory is provided with a lower cementing component and an upper top surface; umbrella skirts are arranged in the middle of the ceramic body; both sides of the upper top surface are provided with extension parts exceeding the cementing component; the extension parts and the upper top surface form a rectangular integral structure; one mounting hole is formed in each of the extension parts on both sides; the upper end of the ceramic body is provided with a first protruding cementing structure; the cementing component of the upper metal accessory is provided with an upper metal accessory groove capable of cementing the first cementing structure of the ceramic body; the first cementing structure is cemented inside the upper metal accessory groove; the lower end of the ceramic body is provided with a second cylindrical groove; the second cylindrical groove is of a second cementing structure; a lower metal accessory is cemented inside the second cementing structure. The post insulator has the advantages of higher firmness in installation, reduction of cost, freeness from looseness after long-term use and reasonable design.

The invention discloses a split level type shielding socket, which comprises a shell, a jack, a plunger ring, an upper insulator and a lower insulator. The jack is fixed in the upper insulator and the lower insulator, and then the upper insulator and the lower insulator are fixed in the shell by the plunger ring; the socket is provided with two metallic shielding layers which can relatively rotate at the joint end of the shell; an elastic resetting device is arranged between the two metallic shielding layers; the two metallic shielding layers are in a free state that hole sites are interlaced and shading mutually when the two metallic shielding layers are separated from a contact pin, thus improving the shielding function of the socket by the interface refection at the dislocation and holes between the two metallic shielding layers. The split level type shielding socket of the invention has the advantages of simple structure, better electromagnetic shielding effect and stable and reliable performance, which is suitable for the application situation of highly reliable electromagnetic shielding when the connector is separated, and the socket can satisfy the requirement of novel equipment.

The invention discloses a radio frequency coaxial connector and belongs to the field of communication devices. Two ends of an inner conductor of partial radio frequency coaxial connectors are large in diameter, consequently the radio frequency coaxial connectors can only be assembled in the middle of the inner conductors after insulators are cut open, and therefore gaps between the insulators and the inner conductors are large and appearances are affected after assembly. The change of coaxial line inductors and capacitors are discontinuous, and therefore electrical properties are affected and the like. According to the radio frequency coaxial connector, a ring is coated outside the cut insulator so as to enable the insulator and the inner conductor to be tightly combined into a whole, and therefore assembly is easy. In the process of use, the insulator neither deforms nor is dislocated, and gaps do not exit between the inner conductor and the insulator, and therefore the electrical properties of products are improved greatly.