Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for detecting interface defects and interface states of post insulator

A technology for pillar insulators and interface defects, which is applied to measuring devices, material analysis through optical means, instruments, etc., can solve the problem of non-fitting at the interface, electric field distortion of pillar insulators, unsatisfactory accuracy, feasibility and ease of operation, etc. problems, to achieve the effect of meeting the requirements of the evaluation work, high detection accuracy, and strong operability

Inactive Publication Date: 2018-11-13
SHENZHEN GRADUATE SCHOOL TSINGHUA UNIV
View PDF9 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

From the basic structure of the polyurethane perfusion composite post insulator, it can be seen that the most likely defect caused by the stacked layered structure of the three materials is the defect at the interface of different materials, and this defect is often manifested as non-fitting at the interface, missing material
The existence of this kind of defect will distort the electric field in the post insulator, which may cause partial discharge or even cause the breakdown of the post insulator in severe cases. Therefore, this defect will bring great hidden dangers to the safe and stable operation of the power system
For this kind of defect, due to its hidden location, the effect of conventional defect detection methods may be unsatisfactory in terms of accuracy, feasibility and ease of operation.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for detecting interface defects and interface states of post insulator
  • Method for detecting interface defects and interface states of post insulator
  • Method for detecting interface defects and interface states of post insulator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053]In order to more clearly understand the above objects, features and advantages of the embodiments of the present invention, the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the features in the embodiments of the present application may be combined with each other.

[0054] In the following description, many specific details are set forth in order to fully understand the embodiments of the present invention, and the described implementations are only part of the implementations of the present invention, but not all of them. Based on the implementation manners in the present invention, all other implementation manners obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the embodiments of the present invention.

[0055] Unless defined otherwise, all technical and scientific terms us...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for detecting interface defects and interface states of a post insulator. The method comprises the following steps of selecting a plurality of space points on a main interface of the post insulator; obtaining a reflection time domain waveform of terahertz of terahertz wave at each space point under the reflection mode; enabling each space point to sequentially forma main pulse, a first echo pulse and a second echo pulse at the main interface, a second interface and a first interface; comparing the reflection time domain waveform of the terahertz at each space point and the reflection time domain waveform of terahertz in a non-defect area, wherein when a third echo pulse occurs or the energy of the echo pulse is increased, the corresponding space point has the interface defect on the detection plane. The detection method has the advantages that on the basis of analysis on the time domain waveform of the terahertz under the reflection mode, the detectionaccuracy is high, the operability is strong, and the feasibility is reliable; the evaluation requirement on the interface state of the polyurethane cast-in-place type composite post insulator can be met.

Description

technical field [0001] The invention relates to the technical field, in particular to a method for detecting interface defects and interface states of post insulators. Background technique [0002] This section is intended to provide a background or context for implementations of the invention that are recited in the claims. The descriptions herein are not admitted to be prior art by inclusion in this section. [0003] Polyurethane pouring composite post insulators, as a new type of composite post insulators, have been widely used in busbar posts and disconnector post insulators of many key domestic projects since their development. This typical composite post insulator is usually composed of three insulating dielectric materials, which are the outer layer of vulcanized silicone rubber sheath (including the shed part), the middle circle of cylindrical epoxy and the volume filled inside the cylinder. The largest proportion of polyurethane foam. In this insulation structure...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/3586
CPCG01N21/3586
Inventor 梅红伟李岚欣王黎明
Owner SHENZHEN GRADUATE SCHOOL TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products