The present invention discloses a
strongly coupled electric injection GaN-based
semiconductor topological microcavity
polariton laser chip, comprising two first n-type electrodes, a first n-GaN two-dimensional topological
photonic crystal, an n-InGaN layer, an InGaN
quantum well
active layer, a p-InGaN layer, a p-AlGaN
barrier layer, a p-GaN injection layer, an n-type
electrode, a first n-GaN two-dimensional topological
photonic crystal, a n-InGaN layer, an InGaN
quantum well
active layer, a p-InGaN layer, a p-AlGaN
barrier layer, a p-GaN injection layer, and a n-type
electrode. + ‑GaN layer, a second n-type
electrode, and two insulating organic materials; the two insulating organic materials are arranged horizontally, and the n‑InGaN layer, the InGaN
quantum well
active layer, the p‑InGaN layer, the p‑AlGaN
barrier layer, the p‑GaN injection layer, and the n + The n-GaN
layers are stacked from bottom to top, and are both located between the two insulating organic materials and connected to the insulating organic materials; the two insulating organic materials are both arranged on top of the first n-GaN two-dimensional topological
photonic crystal, and the top of the first n-GaN two-dimensional topological photonic
crystal is also connected to the bottom of the n-InGaN layer; the first n-type electrode is arranged on the top of the first n-GaN two-dimensional topological photonic
crystal and is located directly below the insulating organic material; the bottom of the second n-type electrode is simultaneously connected to the top of the insulating organic material, the n-InGaN layer, and the bottom of the second n-type electrode. + Top connection of the ‑GaN layer.