The invention, which belongs to the infrared detector field, particularly relates to a near infrared photoelectric detector with enhancement based on utilization of indium tin oxide nanoparticles. The near infrared photoelectric detector successively comprises transparent glass (1) with high infrared transmissivity, a transparent electrode (2), a photoelectric conversion material (3), indium tin oxide nanoparticles (4), and a back electrode (5) from top to bottom. After incident infrared radiation passes through the transparent glass (1), the transparent electrode (2), and the photoelectric conversion material (3), a portion of the infrared radiation is localized at the surfaces of the indium tin oxide nanoparticles (4), scattering is generated and a surface plasma polariton transmission mode is formed, so that an effective transmission distance of the incident electromagnetic wave in the photoelectric conversion material (3) can be increased. According to the invention, the near infrared photoelectric detector with enhancement based on utilization of indium tin oxide nanoparticles has advantages of diversity of a preparation technology, low manufacturing cost, adjustable enhancement resonant position and high sensitivity and the like.