84 results about "Grating coupling" patented technology

The invention provides a high-density photoelectric common connection pinboard based on a low-loss silicon nitride grating coupler. The invention aims to overcome the difficulty that the existing photoelectric heterogeneous chip is difficult to integrate, stack and package, and realizes high-density interconnection between the chip and the interposer by using a grating coupling structure and a silicon through hole technology, thereby realizing high-integration low-loss packaging of the heterogeneous chip on the interposer. According to the invention, high-efficiency optical interconnection between the heterogeneous chip and the photoelectric co-connection intermediate layer is realized through the high-efficiency grating coupler, and high-density electrical interconnection between the chip and the photoelectric co-connection intermediate layer is realized through the TSV technology and the RDL technology. Meanwhile, the optical interconnection efficiency between the interposer and the chip is improved by utilizing the electrode patterning advantage of the RDL technology, and the self-alignment between the chip and the interposer is realized. The method has extremely high compatibility to the packaging scene of the existing photoelectric heterogeneous chip, so that the method has great significance in improving the integration density and reducing the interconnection loss of a photoelectric heterogeneous integrated system and promoting the practicability of the photoelectric heterogeneous integrated system.

The invention relates to the technical field of AR display, in particular to a binocular waveguide, a design method of the binocular waveguide and AR glasses, the binocular waveguide comprises a waveguide substrate, and two exit pupil areas are symmetrically distributed on the waveguide substrate; and a coupling-in grating, a first diffraction element, a second diffraction element, a first coupling-out grating and a second coupling-out grating, the coupling-in grating is arranged on the waveguide substrate, and the first diffraction element and the first coupling-out grating are respectively arranged in one exit pupil area. The second diffraction element and the second coupling-out grating are respectively arranged in the other exit pupil area, and incident light can be respectively transmitted to the first diffraction element and the second diffraction element after being coupled into the waveguide substrate through the coupling-in grating. The application has the effect of improving the wearing experience of the AR equipment.

The invention provides an on-chip integrated laser light source and an optical coupling integration method thereof.The on-chip integrated laser light source comprises a silicon optical substrate and a light source chip assembly integrated on the silicon optical substrate, and the silicon optical substrate comprises an optical signal transmission waveguide; the light source chip assembly comprises a surface-emitting distributed feedback laser chip so as to generate laser beams emitted in the direction perpendicular to the surface of the chip. The on-chip integrated laser light source further comprises a grating coupling structure arranged between the surface emission distributed feedback laser chip and the optical signal transmission waveguide. The light-emitting surface of the surface-emitting distributed feedback laser chip is arranged towards the silicon light substrate, and a laser beam generated by the surface-emitting distributed feedback laser chip is directly projected and coupled into the light signal transmission waveguide through the grating coupling structure; the surface-emitting distributed feedback laser chip is fixedly combined on the silicon optical substrate through a flip chip technology, so that the high-precision end face alignment requirement of the heterogeneous integrated waveguide is converted into high-efficiency grating coupling based on a surface light emitting mode. In this way, harsh end face coupling is converted into efficient grating coupling.

The invention relates to the technical field of gratings, and discloses a grating unit, a grating array and a grating coupler.The grating unit comprises a waveguide layer, the waveguide layer is provided with a first groove body and a second groove body, the cross section of the first groove body and the cross section of the second groove body are quadrilateral, and the depth of the first groove body is larger than that of the second groove body; the distance between the first groove body and the second groove body is larger than the negative value of the preset distance. One-way radiation without a bottom reflector is realized in the short-band grating coupler, downward radiation is suppressed, and the grating unit has a relatively high quality factor, so that the upper radiation efficiency loss in a mode field matching process is greatly reduced.

The application relates to the technical field of waveguide display, in particular to a single-light-machine binocular diffractive light waveguide and display equipment, which comprises a waveguide substrate, an in-coupling grating, an out-coupling grating and a turning grating. The waveguide substrate is symmetrically provided with a left exit pupil area and a right exit pupil area; the in-coupling grating is arranged in the left exit pupil area; the out-coupling grating is arranged in at least two groups, one group of the out-coupling gratings is arranged in the left exit pupil area, and the other group of the out-coupling gratings is arranged in the right exit pupil area; the turning grating is arranged in the right exit pupil area and is arranged above the out-coupling grating; after incident light is coupled into the waveguide substrate through the in-coupling grating, the incident light can be transmitted to the turning grating and the out-coupling grating in the left exit pupil area. The application has the effect of improving the wearing experience of the display equipment.

The invention provides a grating coupler and a design method thereof, relates to the technical field of optics, and aims to realize dynamic regulation and control of the grating coupler. The grating coupler comprises a substrate, a waveguide layer and a phase change material metasurface layer. The waveguide layer is disposed on the substrate. The phase change material metasurface layer is arranged on the side, away from the substrate, of the waveguide layer. Wherein the phase-change material metasurface layer comprises a plurality of protruding structures, so that filtering coupling and switching of the grating coupler on a target working wavelength are achieved.

This application discloses a silicon nitride grating coupler and a silicon-based optical chip. The silicon nitride grating coupler exhibits high coupling efficiency when facing incident light of different wavelengths and modes. Specifically, it includes: a substrate; a first grating layer located on one side of the substrate; a second grating layer located on the side of the first grating layer opposite to the substrate, the second grating layer and the first grating layer being staggered, the duty cycle of the second grating layer being greater than that of the first grating layer, the second grating layer being used to change the scattering path of the incident light and guide the incident light to couple into the first grating layer; a third grating layer located on the side of the first grating layer opposite to the substrate, the third grating layer and the first grating layer also being staggered, the duty cycle of the third grating layer being less than that of the first grating layer, the third grating layer being used to reflect the diffracted light leaking from the first grating layer and guide the reflected light back to the coupling region of the first grating layer; and a waveguide layer connected to the first grating layer along the grating period arrangement direction of the first grating layer.

A method of forming a grating coupler includes: providing a design layout of the grating coupler, wherein the design layout includes: a taper section, comprising a pair of tapers; and a grating section coupled to the taper section, a grating section coupled to the taper section, the grating section including an array of gratings, wherein the gratings include gradually changing shapes, from a top-view perspective, from a central grating having a first non-convex octagonal shape at a center of the grating section to an edge grating having a second non-convex octagonal shape or a convex octagonal shape near an edge of the grating section, wherein the second non-convex octagonal shape is different from the first non-convex octagonal shape. The method further includes manufacturing the grating coupler using the design layout.

The present application relates to the field of optical communication technology, and specifically relates to a design method, device and equipment of a grating coupler and a storage medium. The method comprises: obtaining initial parameters; determining the period of each grating unit according to the initial parameters and the relationship between the scattering angle and the period of the grating unit, and obtaining the initial structure of the grating coupler; under the initial structure, judging whether the scattering range of the grating coupler meets the target scattering range; when the scattering range of the grating coupler does not meet the target scattering range, adjusting the focal point coordinates or the groove array parameters, determining the new period of the grating unit, and repeating the process of adjusting the focal point coordinates or the groove array parameters and determining the period of the grating unit until the scattering range of the grating coupler meets the target scattering range. In the present application, the grating coupler with a specific scattering range is designed without introducing a lens, the good matching between the scattering range of the coupler and the divergence angle of the light source is realized, the coupling efficiency is improved, and the device packaging is not affected.

The application relates to the technical field of multi-plane light converters, and more particularly to an on-chip multi-plane light conversion device and an optimization design method thereof. A grating coupling unit, a multi-plane phase sheet and a mirror are integrated on the same glass substrate, three-dimensional monolithic integration of input coupling, light path folding and light field transformation functions is realized, precise mechanical alignment requirements among discrete components are completely eliminated, the integration degree is high, high-precision alignment is avoided, stability is improved, and the volume is reduced to a certain extent. The application realizes efficient conversion of a light field between an on-chip waveguide and free space through the grating coupling unit, and performs arbitrary unitary transformation in the free space by using an MPLC composed of the multi-plane phase sheet and the mirror, the two work cooperatively, the high mode capacity and low crosstalk advantages of the MPLC are combined with the on-chip integration advantages of the grating coupling unit, and high-performance and small-volume light field transformation can be realized.

The invention provides an optical path structure and electronic equipment, and relates to the technical field of optical signal communication. The optical path structure comprises an optical chip, a circuit base plate and a substrate. The circuit base plate is provided with a window area; the active surface of the optical chip is welded at the edge of the window area on the circuit bottom plate, and the optical chip is electrically connected with the circuit bottom plate; in the arrangement direction perpendicular to the plane of the circuit base plate, part of the optical waveguide on the end face of the optical chip is located in the projection area of the window area. Wherein the signal transmission direction of the optical chip is parallel to the plane of the circuit base plate; the target surface of the substrate is bonded and fixed on the bottom surface of the optical chip. According to the invention, the optical chip is inversely welded on the edge of the window area of the windowing on the circuit base plate, so that part of the optical waveguide can perform signal transmission in the window area in the plane direction of the circuit base plate, thereby reducing the space size required in the setting direction when the grating coupler is used for coupling, effectively improving the integration level of the device, and improving the reliability of the device. And the integration difficulty of the device is reduced.

Methods of semiconductor device fabrication are provided. A method includes providing a device including a photonic die having a grating coupler. The method includes patterning an upper surface of the device to form a lens component configured to receive light from an upper surface of the photonic die. The method includes forming a first mirror configured to optically couple the lens component with the grating coupler according to an angle of incidence between the light and the grating coupler of less than about 15 degrees. The embodiment of the invention also relates to a semiconductor device, a manufacturing method thereof and an optical coupling method.

A first circuit sends electrical data. The electrical data is sent to a vertical-cavity surface-emitting laser (VCSEL). A wavelength of the VCSEL is modulated. The modulating includes emitting, by the VCSEL, a wavelength-modulated beam (WMB). The WMB is based on the electrical data that was sent. The modulating can be based on injecting current into the VCSEL. The modulating can be based on VCSEL chirp. The WMB is coupled optically to an optical medium. The optical medium comprises a waveguide or a fiberoptic cable. The coupling optically is accomplished using a grating coupler, a mirror, or an off-axis diffractive lens. The optical medium is further coupled to a wavelength-dependent optical element (WDOE). The WDOE decodes the WMB into the electrical data that was sent. The electrical data is delivered to a second circuit.

The invention discloses a two-point optical touch positioning method and system based on a double-frequency signal, and belongs to the technical field of optical touch, the method comprises the following steps: enabling two light sources to emit optical signals carrying different frequencies, enabling the optical signals to enter an optical film through grating coupling, then propagating the optical signals to the edge of the optical film, and converting the optical signals into electric signals; signals are collected in a multi-channel signal collection mode to obtain time sequence data, the signals are distinguished according to edge number differences, coordinates of corresponding incidence points are calculated, and coordinate deviation of overlapped signals is corrected through cross check; the system comprises a double-frequency light source module, an optical conduction module, a photoelectric conversion module, a signal processing module and an output module, incident light of the double-frequency light source module is transmitted to the edge of the optical conduction module through the optical conduction module and received by the photoelectric conversion module, and the coordinate of the incident light and the coordinate of the incident light are calculated through the signal processing module. And touch interaction is realized by the output module. The anti-interference performance and the response speed of two-point touch are improved by simplifying the frequency distinguishing logic.

The invention provides a double-layer silicon nitride grating coupler for a visible light wave band. The double-layer silicon nitride grating coupler comprises a substrate, a lower cladding, a first layer of silicon nitride, an interlayer, a second layer of silicon nitride and an upper cladding from bottom to top, the first layer of silicon nitride comprises a first layer of silicon nitride grating and a silicon nitride waveguide, and the second layer of silicon nitride is a second layer of silicon nitride grating and is output by the lower layer of silicon nitride waveguide, so that relatively high coupling efficiency is realized. Due to the visible light wave band, the thickness of the first layer of silicon nitride and the second layer of silicon nitride does not exceed 500nm. According to the double-layer silicon nitride grating coupler, the vertical symmetry of gratings is broken through, high-directivity propagation of light waves is achieved through proper position arrangement of the two layers of silicon nitride gratings, and meanwhile the refractive index contrast ratio and the coupling efficiency can be improved through the double-layer gratings; on the premise that the grating period is not affected, the technology of the double-layer silicon nitride grating coupler manufactured based on the two uniform fully-etched gratings is simple.

An optical coupling between an optical fiber and a grating coupler having a design angle, in the form of an optical bench having a structured reflective surface at which incident light is directed. The optical bench supports the optical fiber in optical alignment with respect to the structured reflective surface. The optical fiber is a single-mode fiber. The structured reflective surface turns light transmitted between the grating coupler and the optical fiber and includes a three-dimensional concave reflective surface profile that is structured to reshape the light transmitted between the grating coupler and the optical fiber to produce a mode field that matches the optical fiber input / output and the design angle of the grating coupler.

The invention provides a waveguide active integrated device. The waveguide active integrated device comprises a substrate, a waveguide layer, a modulator, a detector, a first reflector and a second reflector, the substrate comprises a lower cladding, a waveguide layer is arranged on the lower cladding, the waveguide layer comprises a silicon waveguide, and the silicon waveguide comprises a waveguide grating; the modulator and the detector are respectively arranged on the silicon waveguide; the first reflector is arranged in the lower cladding at the lower part of the waveguide grating, and the first reflector and the waveguide grating form a grating coupling structure; and the second reflector is arranged in the middle of the silicon waveguide on one side of the detector and is used for reflecting the signal light into the detector. The invention also provides a preparation method of the waveguide active integrated device. According to the invention, the reflector is prepared at the lower part of the waveguide grating to form a grating coupling structure, so that the intensity of incident light can be effectively improved; furthermore, a modulator and a detector are integrated in the device, and a reflector is arranged close to the detector, so that the detection efficiency of the detector can be further improved.

This invention provides a grating coupler based on a double-layer silicon nitride structure and its fabrication method, comprising a substrate, a first silicon dioxide layer, a lower silicon nitride grating, a lower silicon nitride waveguide, a second silicon dioxide layer, an upper silicon nitride grating, an upper silicon nitride waveguide, and a third silicon dioxide layer. The upper silicon nitride grating couples a portion of the input light into the upper silicon nitride waveguide, while the other portion of the input light passes through the upper silicon nitride grating and is incident on the substrate as transmitted light. The lower silicon nitride grating reflects a portion of the transmitted light back to the upper silicon nitride grating and couples it into the upper silicon nitride waveguide. The other portion of the transmitted light enters the lower silicon nitride grating and couples into the lower silicon nitride waveguide, and then couples into the upper silicon nitride waveguide. The grating coupler of this invention has a coupling efficiency of over 60% for input light with wavelengths of 1530 nm to 1565 nm, and a 1 dB bandwidth greater than 100 nm.

The invention discloses a leakage mode suppression method of a thin film lithium niobate beam splitter. The beam splitter comprises a multimode interference coupler and a grating coupler. The multimode interference coupler is composed of an input waveguide, an output waveguide, an input conical waveguide, an output conical waveguide and a multimode interference coupling area. The grating coupler is composed of straight waveguides which are periodically arranged and have specific inclination angles. The grating couplers are symmetrically distributed on the two sides of the output waveguide of the multimode interference coupler, and the period of the grating meets the corresponding phase matching condition. Through optimization design of the grating structure, non-reciprocity interference signals are effectively filtered out, and propagation of a leakage mode in a plane and coupling between the leakage mode and a transmission mode are inhibited. According to the method, the influence of a leakage mode on the performance of the optical system is remarkably reduced, and a low-loss and low-leakage beam splitter structure is realized, so that the overall performance of the optical system is improved.

The invention provides a laterally buried grating DFB laser and a preparation method thereof, through stacked arrangement of an N-type contact layer, an N-type limiting layer, an active layer, a P-type limiting layer and a P-type contact layer, lateral gratings are buried at two sides of a ridge waveguide and are close to the active layer, and by using a transverse coupling mechanism of the lateral gratings and an active layer light field, the lateral optical field of the N-type contact layer and the P-type limiting layer is formed. The grating coupling coefficient mainly depends on the lateral distance instead of the etching depth, so that the sensitivity of the device performance to the etching depth is reduced, and the performance stability of the laser is remarkably improved. Meanwhile, an additional etching stop layer does not need to be introduced in the preparation process of the structure, the epitaxial growth and etching process is simplified, the manufacturing cost is reduced, lattice mismatch, interface defects and additional light absorption loss caused by the etching stop layer are avoided, and the light output efficiency and long-term reliability of the laser can be effectively improved.

The invention relates to the technical field of optical communication, in particular to a pluggable optical connector. The pluggable connector comprises a packaging substrate, a socket module and a plug module, the socket module is connected with the first end of the packaging substrate, and the second end of the plug module is detachably connected with the first end of the socket module; the packaging substrate comprises an optical chip, the socket module comprises a light guide array, and the plug module comprises a grating coupling array; the optical chip is optically interconnected with the light guide array, and the grating coupling array is optically interconnected with the light guide array. According to the optical connector, the light guide array and the grating coupling array are respectively arranged in different modules of the optical connector, and then the packaging substrate, the socket module and the plug module are aligned, so that optical interconnection of the light guide array and the grating coupling array can be finally realized, and therefore, efficient transmission of optical signals can be realized; and the socket module and the plug module are detachably connected, so that the maintenance performance and the reliability of the optical connector are improved.

The invention relates to a quantum sensing microsystem and method. Comprising optical coupling between a light source and a grating coupler, integration of the grating coupler on a main optical waveguide, evanescent field coupling between the main optical waveguide and a diamond NV color center, near-field coupling between the main optical waveguide and an optical filter, and evanescent field coupling between the optical filter and a photodiode. The light source is used for emitting laser and enabling the laser to enter the grating coupler; the grating coupler is used for transmitting the laser to the diamond NV color center through the main optical waveguide, and the diamond NV color center emits fluorescent light according to laser excitation; the optical filter is used for filtering laser and coupling fluorescence to the photodiode through an evanescent field; the photodiode is used for generating a corresponding digital signal based on the fluorescence, and the digital signal is used for calculating a magnetic field measurement result of the to-be-measured magnetic field where the quantum sensing microsystem is located. According to the invention, the size of the quantum sensing system can be reduced.

This disclosure relates to an angled grating coupler having angled side edges. A structure for the grating coupler and a method for manufacturing the structure for the grating coupler are also provided. The structure includes a grating coupler having a central portion and edge portions. The central portion and edge portions define sidewalls, and the central portion and edge portions have a first longitudinal axis, with the edge portions arranged at intervals along the first longitudinal axis. Each edge portion protrudes from the sidewall at an angle relative to the first longitudinal axis. A waveguide core is optically coupled to the grating coupler. The first longitudinal axis is aligned in a first direction, and the waveguide core has a second longitudinal axis aligned in a second direction different from the first direction.

Aspects of the subject technology relate to structures and methods for facilitating optical coupling and beam collimation in photonic integrated circuits. A photonic structure can include a waveguide and a grating coupling structure coupled to the waveguide for emitting first electromagnetic radiation fed through the waveguide into a first region adjacent to a first side of the grating coupler structure and second electromagnetic radiation fed through the waveguide into a second region adjacent to a second side of the grating coupler structure. The structure can also include a reflection structure disposed in the first region adjacent to the first side of the grating coupler structure and configured to reflect at least a portion of the first electromagnetic radiation back through the first region, the grating coupler structure, and into the second region.

The present system(s) and method(s) use an integrated photonic sensor to determine tilt angle present at the metrology region or mark. The integrated photonic sensor uses two pairs of grating couplers, each pair having an emitting grating coupler and a capturing grating coupler. The positions of the grating couplers may be fixed where a first capturing grating coupler will capture a peak captured light value of its paired emitting grating coupler when the angle of tilt at the region is a positive angle, and a second capturing grating coupler will capture a peak captured light value of its paired emitting grating coupler when the angle of tilt at the region is a negative angle. Using this fixed configuration and knowing the tilt angles at which peak coupling efficiencies would be captured, a ratio is computed using the two captured light values. A tilt angle is determined using this ratio.

The invention discloses a semiconductor laser, a modulation method and a preparation method, and relates to the technical field of semiconductor lasers. The semiconductor laser comprises a modulation area, a high Kappa grating area and a low Kappa grating area which are sequentially arranged in the light emitting direction. The modulation region, the high-Kappa grating region and the low-Kappa grating region share a first electrode layer, a substrate layer, a first limiting layer, an active region, a second limiting layer and a cover layer which are sequentially stacked from bottom to top, and the modulation region and the low-Kappa grating region are further provided with a second electrode and a third electrode which are used for injecting current respectively. The grating coupling coefficient of the first grating structure located in the high Kappa grating area is higher than the grating coupling coefficient of the second grating structure located in the low Kappa grating area. Based on the simple structure, modulation current and bias current can be injected through the corresponding electrodes respectively, detuning loading and photon-photon resonance effect are cooperatively introduced, bandwidth is expanded, photon fluctuation is suppressed, eye pattern quality is improved, and high-speed modulation is realized.

The present disclosure is directed towards aligning a photonic integrated circuit (PIC) through providing a PIC with a marker waveguide, wherein a marker waveguide is a waveguide having: a first end located at the edge of the PIC wherein the first end is coupled to an edge coupling; and a second end coupled to a grating coupler or a device coupler, wherein: the grating coupler or device coupler is configured to receive light and couple the light to the waveguide to illuminate the waveguide to facilitate the correct alignment of the edge coupler to an external component.

The application discloses a four-port vertical grating coupler based on aperiodic structure, which comprises, from bottom to top, a silicon substrate, 5 pairs of silicon / silicon dioxide alternating Bragg mirror layers, a silicon dioxide lower cladding layer, a silicon flat plate layer and a single-layer grating layer. The single-layer grating layer has a four-axis symmetric two-dimensional geometric pattern, which is composed of discrete silicon dielectric blocks and filling holes arranged alternately. The duty cycle difference of the central region of the single-layer grating layer presents a specific cross distribution, and the duty cycle difference of the main axis and the diagonal direction of the peripheral region presents a specific positive-negative alternating aperiodic oscillation in the radial direction. The device prevents light leakage through the bottom Bragg mirror, realizes mode matching with a vertical Gaussian light beam in combination with the top aperiodic grating structure, and significantly improves the coupling efficiency of four-port orthogonal routing and reduces the reflectivity.

The invention relates to the technical field of integrated photonics and optical communication, in particular to a thin film lithium niobate grating coupler design and layout output method based on multi-parameter multi-objective optimization. A mapping model of an input light field and an output light field of a grating coupler is established, an improved multi-target genetic algorithm is combined, key parameters such as the period, the duty ratio and the etching depth of a grating are comprehensively optimized, and meanwhile performance indexes such as coupling efficiency, insertion loss and bandwidth are considered. Efficient optical coupling of a grating coupler under various working conditions is achieved, a grating geometric layout suitable for a thin film lithium niobate platform is generated, and high consistency of the design process and the manufacturing process is ensured. According to the invention, high performance, high integration level and high reliability of the thin-film lithium niobate grating coupler can be realized, a competitive optical coupling solution is provided for an integrated optical system and a photon integrated circuit in an optical communication system, and further development and application of an optical communication technology are powerfully promoted.