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728 results about "Constant waveform" patented technology

A continuous wave or continuous waveform (CW) is an electromagnetic wave of constant amplitude and frequency, almost always a sine wave, that for mathematical analysis is considered to be of infinite duration.

Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer

A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.
Owner:APPLIED MATERIALS INC

Single crystal CVD synthetic diamond material

A single crystal CVD synthetic diamond material comprising: a total as-grown nitrogen concentration equal to or greater than 5 ppm, and a uniform distribution of defects, wherein said uniform distribution of defects is defined by one or more of the following characteristics: (i) the total nitrogen concentration, when mapped by secondary ion mass spectrometry (SIMS) over an area equal to or greater than 50×50 μm using an analysis area of 10 μm or less, possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value, or when mapped by SIMS over an area equal to or greater than 200×200 μm using an analysis area of 60 μm or less, possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value; (ii) an as-grown nitrogen-vacancy defect (NV) concentration equal to or greater than 50 ppb as measured using 77K UV-visible absorption measurements, wherein the nitrogen-vacancy defects are uniformly distributed through the synthetic single crystal CVD diamond material such that, when excited using a 514 nm laser excitation source of spot size equal to or less than 10 μm at room temperature using a 50 mW 46 continuous wave laser, and mapped over an area equal to or greater than 50×50 μm with a data interval less than 10 μm there is a low point-to-point variation wherein the intensity area ratio of nitrogen vacancy photoluminescence peaks between regions of high photoluminescent intensity and regions of low photolominescent intensity is <2× for either the 575 nm photoluminescent peak (NV0) or the 637 nm photoluminescent peak (NV); (iii) a variation in Raman intensity such that, when excited using a 514 nm laser excitation source (resulting in a Raman peak at 552.4 nm) of spot size equal to or less than 10 μm at room temperature using a 50 mW continuous wave laser, and mapped over an area equal to or greater than 50×50 μm with a data interval less than 10 μm, there is a low point-to-point variation wherein the ratio of Raman peak areas between regions of low Raman intensity and high Raman intensity is <1.25×; (iv) an as-grown nitrogen-vacancy defect (NV) concentration equal to or greater than 50 ppb as measured using 77K UV-visible absorption measurements, wherein, when excited using a 514 nm excitation source of spot size equal to or less than 10 μm at 77K using a 50 mW continuous wave laser, gives an intensity at 575 nm corresponding to NV0 greater than 120 times a Raman intensity at 552.4 nm, and/or an intensity at 637 nm corresponding to NV greater than 200 times the Raman intensity at 552.4 nm; (v) a single substitutional nitrogen defect (Ns) concentration equal to or greater than 5 ppm, wherein the single substitutional nitrogen defects are uniformly distributed through the synthetic single crystal CVD diamond material such that by using a 1344 cm−1 infrared absorption feature and sampling an area greater than an area of 0.5 mm2, the variation is lower than 80%, as deduced by dividing the standard deviation by the mean value; (vi) a variation in red luminescence intensity, as defined by a standard deviation divided by a mean value, is less than 15%; (vii) a mean standard deviation in neutral single substitutional nitrogen concentration of less than 80%; and (viii) a colour intensity as measured using a histogram from a microscopy image with a mean gray value of greater than 50, wherein the colour intensity is uniform through the single crystal CVD synthetic diamond material such that the variation in gray colour, as characterised by the gray value standard deviation divided by the gray value mean, is less than 40%.
Owner:ELEMENT SIX LTD

High-repetition-rate passively mode-locked solid-state laser

A passively mode-locked solid-state laser is designed to emit a continuous-wave train (51, 52) of electromagnetic-radiation pulses, the fundamental repetition rate of the emitted pulses exceeding 1 GHz, without Q-switching instabilities. The laser includes an optical resonator (3.1), a solid-state laser gain element (2) placed inside the optical resonator (3.1), a device (1) for exciting said laser gain element (2) to emit electromagnetic radiation having the effective wavelength, and a device (4) for passive mode locking including a saturable absorber. The laser gain element (2) is a laser material with a stimulated emission cross section exceeding 0.8×10−18 cm2 at the effective wavelength, and is made of Nd:vanadate. The saturable absorber (4) is preferably a semiconductor saturable absorber mirror (SESAM) device. Even higher repetition rates are achieved by operating the laser in the soliton regime. For use in fiber-optical telecommunication, the laser wavelength is preferably shifted to 1.5 μm by use of an optical parametric oscillator. The laser is simple, robust, compact, efficient, and low-cost. It generates a relatively large average power of 100 mW and higher, which is useful for a number of optical probing and detection applications, in a beam (51, 52) that is substantially a fundamental spatial mode.
Owner:LUMENTUM SWITZERLAND AG
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