2 results about "Laser crystallization" patented technology

The application relates to a method for obtaining nanometer-scale lines by using a laser, and belongs to the technical field of semiconductors, which solves the problems of complicated process and extremely high cost in obtaining high-density nanometer-scale optical lines in the prior art. The method comprises the following steps: sequentially forming a dielectric layer and an amorphous silicon layer above a substrate; using a laser to irradiate a mask to perform silicon crystallization on a partial region of the amorphous silicon layer, wherein the crystal boundaries of the polycrystalline silicon formed after the partial region of the amorphous silicon layer is subjected to silicon crystallization are determined by the interval of the regularly-shaped apertures on the mask; performing a planarization treatment on the crystal boundaries of the polycrystalline silicon of the amorphous silicon layer; removing the crystal boundaries to form crystal boundary grooves by using an etching liquid; and obtaining nanometer-scale lines on the substrate by using the crystal boundary grooves. The regularly-shaped crystal boundaries formed by the method of laser crystallization and the damascene process obtain a low-cost nanometer-scale line array.

To provide a continuous wave semiconductor laser crystallization method for a wide bandgap semiconductor film having a bandgap energy of 2.8 eV or more, and improving the mobility of the film by growing a single crystal band.SOLUTION: A method for crystallizing a film and a method for manufacturing the crystallized film includes a step of irradiating an indium oxide wide bandgap semiconductor film with a semiconductor laser whose absorption coefficient of the wide bandgap semiconductor film is 3000 cm-1 to 50000 cm-1 using a microchelobron laser beam scanning method.SELECTED DRAWING: Figure 4