20 results about "Laser crystallization" patented technology

The invention discloses laser crystallization equipment and a laser crystallization method, and belongs to the technical field of laser crystallization. The laser crystallization equipment comprises laser generation equipment, a polarization attenuation system, an optical unit, a base and a target substrate, wherein the target substrate and the optical unit are oppositely arranged and are used for irradiating a target thin film by using output laser beams for crystallization. Through the detachable clamping seat, the number of the polarization attenuators can be increased or decreased, the number of the polarizers on the polarization attenuators can be subjected to angle adjustment, then the requirements for attenuation and angle adjustment of laser beams can be met, the overall applicability is improved through the detachable polarization attenuators, and under the effect of the reflection light guide unit, the light guide effect is improved. According to the polarization attenuator, the emitting direction of the laser can be guided, then the two light beams can be emitted to the same position, the intensity of the laser beams at the position is increased, the effect of enhancing the intensity of the laser beams is achieved, the polarization attenuator does not need to be disassembled, and use is more convenient.

A monitoring system of a laser crystallization apparatus according to an embodiment of the present application includes: a stage for supporting a substrate; a laser beam generating section for providing a laser beam to the substrate; a scattered beam detecting section for detecting a scattered beam of the laser beam scattered on the substrate; and a control section for receiving and storing data related to intensity of the scattered beam detected, and correcting intensity of the laser beam of the laser beam generating section based on the data.

The present invention belongs to the technical field of back-contact batteries, and specifically relates to a method for manufacturing and applying a combined passivation back-contact battery with a precisely set reverse leakage channel, comprising: S5, using laser crystallization technology to crystallize a portion of a second semiconductor layer superimposed on a first semiconductor layer and near the edge of a first opening region to obtain a crystallized region; S6, forming a second opening region spaced apart from the first opening region; S7, depositing a transparent conductive film layer on the back side; S8, forming an isolation trench, with at least a portion of the isolation trench corresponding to the crystallized region, and the crystallized region, the first doped polysilicon layer, and the transparent conductive film layer forming a reverse leakage channel PN junction. The present invention significantly increases the reverse leakage capacity of the reverse leakage channel PN junction, dispersing the reverse leakage current and reducing the battery hot spot effect, while also achieving higher battery efficiency. The bypass diode can be eliminated, reducing costs, reducing battery attenuation, and increasing power generation.

A laser light source and a laser crystallization apparatus including the same are provided. The laser light source includes an airtight container. The first resonance mirror and the second resonance mirror are arranged outside the airtight container. The first resonant mirror includes a lens unit and a reflective coating. The lens unit includes a first surface and a second surface, and the first surface is inclined with respect to the second surface.

A laser crystallization device includes a laser beam generator which provides a first laser beam onto a substrate, on which a layer to be treated is disposed, a re-reflector positioned in a path of a second laser beam reflected from the layer to be treated, where the re-reflector changes a path of the second laser beam in a direction toward the substrate, and a beam width changer positioned in the path of the second laser beam which is changed by the re-reflector, where the beam width changes a width of the second laser beam in a way such that a third laser beam having a width different from the width of the second laser beam re-enters the substrate.

The application relates to a method for obtaining nanometer-scale lines by using a laser, and belongs to the technical field of semiconductors, which solves the problems of complicated process and extremely high cost in obtaining high-density nanometer-scale optical lines in the prior art. The method comprises the following steps: sequentially forming a dielectric layer and an amorphous silicon layer above a substrate; using a laser to irradiate a mask to perform silicon crystallization on a partial region of the amorphous silicon layer, wherein the crystal boundaries of the polycrystalline silicon formed after the partial region of the amorphous silicon layer is subjected to silicon crystallization are determined by the interval of the regularly-shaped apertures on the mask; performing a planarization treatment on the crystal boundaries of the polycrystalline silicon of the amorphous silicon layer; removing the crystal boundaries to form crystal boundary grooves by using an etching liquid; and obtaining nanometer-scale lines on the substrate by using the crystal boundary grooves. The regularly-shaped crystal boundaries formed by the method of laser crystallization and the damascene process obtain a low-cost nanometer-scale line array.

A laser crystallization apparatus is disclosed. The laser crystallization apparatus includes: a laser irradiation section that irradiates a first laser beam to a substrate; and a laser controller receiving a second laser beam, in which the laser controller includes a first lens having a first focal length and a second lens having a second focal length different from the first focal length, and the laser controller irradiates a third laser beam, in which the second laser beam is the first laser beam reflected from the substrate, the third laser beam is a second laser beam passing through the laser controller, and the intensity of the second laser beam is adjusted by the laser controller.

A laser optic system includes a beam division unit configured to divide a laser beam into a first sub-beam and a second sub-beam, an inverting optic system configured to generate a first deformed beam by inverting a cross-sectional shape of the first sub-beam and reducing a diameter of the cross-sectional shape of the first sub-beam, a non-inverting optic system configured to generate a second deformed beam by reducing a diameter of a cross-sectional shape of the second sub-beam, and an integrated optic system configured to generate a line beam by integrating the first deformed beam and the second deformed beam.

The invention belongs to the technical field of back contact cells, and particularly relates to a manufacturing method and application of a combined passivation back contact cell capable of accurately setting a reverse electric leakage channel, and the manufacturing method comprises the steps: S5, employing a laser crystallization technology, carrying out the crystallization processing of a part of a second semiconductor layer which is superposed on a first semiconductor layer and is close to the edge of a first opening region, and obtaining a crystallization region; s6, forming a second opening area which is arranged at an interval with the first opening area; s7, depositing a transparent conductive film layer on the back surface; and S8, an isolation groove is formed, at least part of the isolation groove corresponds to the crystallization area, and the crystallization area, the first doped polycrystalline silicon layer and the transparent conductive film layer form a reverse electric leakage channel PN junction. According to the invention, the reverse electric leakage capability of the PN junction of the reverse electric leakage channel is obviously improved, the effects of dispersing the reverse leakage current and reducing the hot spot effect of the battery are achieved, and meanwhile, relatively high battery efficiency is obtained; a bypass diode can be omitted, cost is reduced, battery attenuation is reduced, and generating capacity is increased.

A laser crystallization monitoring device includes a stage that supports a substrate, a laser beam generator that emits a laser beam to the substrate, a mirror that reflects the laser beam emitted from the laser beam generator and that rotates around a rotation axis, a first telecentric f-theta lens located on the laser beam path between the mirror and the substrate, a second telecentric f-theta lens through which the laser beam reflected from the substrate passes, and a monitor that inspects the laser beam passing through the second telecentric f-theta lens.

The invention provides laser crystallization equipment and a laser crystallization process method, and the equipment comprises a conveying system which comprises a conveying belt and a plurality of jigs used for accommodating to-be-processed battery pieces, and the jigs are arranged on the conveying belt; the visual system comprises a detection mechanism, and the detection mechanism is arranged above the conveying belt so as to detect the battery piece to be processed; the laser system is used for outputting a processing laser beam; the optical system comprises a laser amplification module, a laser output head, a reflector path module, a galvanometer and a field lens which are sequentially arranged in the conveying direction of the machining laser beam, and the machining laser beam sequentially passes through the laser amplification module, the laser output head, the reflector path module, the galvanometer and the field lens and is finally focused on the surface of the battery piece to be machined. According to the invention, high-quality and low-damage crystallization of the amorphous silicon layer of the crystalline silicon solar cell can be realized, selective doping can be synchronously completed, the conversion efficiency of a BC cell is improved, and the process yield is high.

To provide a continuous wave semiconductor laser crystallization method for a wide bandgap semiconductor film having a bandgap energy of 2.8 eV or more, and improving the mobility of the film by growing a single crystal band.SOLUTION: A method for crystallizing a film and a method for manufacturing the crystallized film includes a step of irradiating an indium oxide wide bandgap semiconductor film with a semiconductor laser whose absorption coefficient of the wide bandgap semiconductor film is 3000 cm-1 to 50000 cm-1 using a microchelobron laser beam scanning method.SELECTED DRAWING: Figure 4

A laser optical system and a laser crystallization apparatus including the same are provided. The laser optical system includes: a beam splitting unit configured to split a laser beam into a first sub-beam and a second sub-beam; an inversion optical system configured to generate a first deformed beam by inverting a cross-sectional shape of the first sub-beam and reducing a diameter of the cross-sectional shape of the first sub-beam; a non-inverting optical system configured to generate a second deformed beam by reducing a diameter of a cross-sectional shape of the second sub-beam; and an integrated optical system configured to generate a line beam by integrating the first deformed beam and the second deformed beam.

A laser crystallization apparatus and a laser crystallization method are provided. The laser crystallization apparatus includes: a laser beam generator providing a first laser beam onto an object to be processed in which a layer to be processed is disposed; a rereflector located in a path of the second laser beam reflected from the layer to be processed, in which the rereflector changes the path of the second laser beam to a direction toward the object to be processed; and a beam width changer located in a path of the second laser beam changed by the rereflector, in which the beam width changer changes a width of the second laser beam in such a manner that a third laser beam having a width different from the width of the second laser beam enters the object to be processed again.

A laser light source and a laser crystallization apparatus including the same are provided. The laser light source includes a gas-tight container. A first resonator mirror and a second resonator mirror are disposed outside the gas-tight container. The first resonator mirror includes a lens unit and a reflective coating. The lens unit includes a first surface and a second surface, and the first surface is tilted with respect to the second surface.

The invention discloses a laser crystalline state modulation method for heterogeneous interface CTE mismatch compensation and a laser crystallization device, and the method comprises the steps: monitoring the stress distribution of a heterogeneous material interface region in real time, and obtaining interface stress gradient data; calculating a thermal expansion coefficient mismatch degree delta alpha based on the stress gradient data; dynamically adjusting laser processing parameters according to the delta alpha; scanning the interface area, inducing the interface area to generate crystalline state transition, and forming a three-stage transition structure comprising a non-crystallization layer, a gradient nanocrystalline layer and a recrystallization layer; and the lattice distortion rate of the heterogeneous material is monitored on line, and when the lattice distortion rate is larger than 5%, the above steps are returned to carry out iterative compensation. Through the application of the laser crystalline state modulation method, the problems of thermal stress cracking, layering failure, fatigue life attenuation and the like caused by mismatch of coefficient of thermal expansion (CTE) of a heterogeneous material interface (delta alpha is larger than or equal to 4 ppm / K) can be well solved.

A cross-point memory semiconductor structure and a method of creating the same are provided. There is a first electrode layer on top of the substrate. A conductive oxide diffusion barrier layer is on top of the first electrode. A polycrystalline silicon diode is on top of the conductive oxide diffusion barrier. A phase change material (PCM) layer is on top of the polycrystalline silicon diode. A second electrode is on top of the PCM layer.

A laser crystallization apparatus according to an embodiment includes: a light source unit which irradiates a laser beam; and a path conversion unit which converts the laser beam incident from the light source unit into a linear beam having a long axis parallel to a first direction and a short axis parallel to a second direction. The linear beam propagates in a third direction perpendicular to the first direction and the second direction, the path conversion unit includes an incident window extending parallel to a first length direction, an emission window extending parallel to a second direction, a first reflection unit disposed at the same side with the incident window, and a second reflection unit disposed at the same side with the emission window, and the second length direction extends parallel to the first direction in a view of the third direction.

A laser crystallization apparatus includes a laser irradiation part which radiates a first laser beam to a substrate, a laser controller which receives a second laser beam, where the laser controller includes a first lens having a first focal length and a second lens having a second focal length different from the first focal length, and the laser controller radiates a third laser beam, where the second laser beam is the first beam reflected from the substrate, and the third laser beam is the second laser beam passed through the laser controller, where an intensity of the second laser beam is adjusted by the laser controller.