Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate

a technology of laser shaped as a line beam and film deposited on a substrate, which is applied in the direction of active medium materials, manufacturing tools, crystal growth processes, etc., can solve the problems of poor grain quality, non-flat surface profile, and unsuitability of crystallized film for certain applications

Inactive Publication Date: 2005-11-24
CYMER INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0015] In still another aspect of an embodiment of the present invention, a system and method are provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped beam. This syst

Problems solved by technology

High energy density levels may cause the film to flow resulting in undesirable “thin spots”, a non-flat surface profile and poor grain quality.
This uneven distribution of film material is often termed “agglomeration” and can render the crystallized film unsuitable for certain applications.
On the other hand, low energy density levels may lead to incomplete melting and result in poor grain quality.
Thus, surface variations of the silicon film, the glass substrate and the vacuum chuck surface which holds the glass substrate, even variations as small as a few microns, if unacc

Method used

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  • Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
  • Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
  • Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate

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Embodiment Construction

[0027] Referring initially to FIG. 1, there is shown a schematic, not to scale, view of the primary components of an exemplary production system, designated generally system 10, for crystallizing an amorphous silicon film 12. As shown, the system 10 may include a laser source 20 for generating a pulsed laser beam, a pulse stretcher 22 for increasing pulse duration and a beam delivery unit 24 which may have a mechanism to actively steer the beam and / or an active beam expander. The system 10 may further include a stabilization metrology module 26 for measuring one or more beam characteristics, e.g., wavefront and / or beam pointing, and generating control signals for use by the active steering unit and / or the active beam expander. System 10 may also include an optics module 28 for beam homogenization, beam shaping and / or beam focusing, and a moveable stage system 30 for holding and positioning a silicon film 12 that has been deposited on a substrate 32, which can be for example, glass. ...

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Abstract

A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] The present invention is a continuation-in-part of U.S. application Ser. No. 10 / 712,545, filed on Nov. 13, 2003 and titled, “LONG DELAY AND HIGH TIS PULSE STRETCHER” which is a continuation-in-part of U.S. application Ser. No. 10 / 141,216, filed on May 7, 2002, now U.S. Pat. No. 6,693,939, and titled, “LASER LITHOGRAPHY LIGHT SOURCE WITH BEAM DELIVERY,” the disclosures of each of which are hereby incorporated by reference herein. [0002] The present invention is also a continuation-in-part of U.S. application Ser. No. 10 / 781,251, titled “VERY HIGH ENERGY, HIGH STABILITY GAS DISCHARGE LASER SURFACE TREATMENT SYSTEM,” filed on Feb. 18, 2004. [0003] The present invention is also a continuation-in-part of U.S. application Ser. No. 10 / 425,361, filed on Apr. 29, 2003 and titled, “LITHOGRAPHY LASER WITH BEAM DELIVERY AND BEAM POINTING CONTROL.”FIELD OF THE INVENTION [0004] The present invention relates to systems and methods for positioning a fi...

Claims

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Application Information

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IPC IPC(8): B23K26/04B23K26/06B23K26/073C30B1/02C30B13/24H01S3/10H01S3/13
CPCB23K26/04B23K26/063B23K26/043C30B1/023C30B13/24B23K26/0738B23K26/0622
Inventor DAS, PALASH P.HOFMANN, THOMASDAVIS, JESSE D.SMITH, SCOT T.PARTLO, WILLIAM N.
Owner CYMER INC
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