123 results about "Process zone" patented technology

A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.

A system and method for depositing a cheque at a self-service terminal such as an automated teller machine. The method comprises the steps of: transporting the cheque from an entrance slot to a process zone; determining whether to accept or reject the document; and electronically acquiring an image of the document. Thereupon the system identifies an electronic or telecommunications address of a device associated with the user; and in the event of accepting the document, transmits the acquired image of the cheque to the device address.

UV-glossing for simplex and duplex prints, wherein an input member having thereon a pre-gloss toner image including UV-curable toner is moved, in non-slip association with a smooth UV-transparent web, jointly with the web through a plurality of process zones sequentially including a heating zone and an exposure zone, thereby producing an output member having a glossed, UV-cured, surface. In the heating zone, at least the outermost toner of the pre-gloss toner image is heated to a molten state in contact with the web. In the exposure zone, with the molten state being maintained, at least the outermost toner which contacts the web is cured by a flux of UV radiation transmitted through the web. In a preferred embodiment, the UV-curable toner is formed as an outer layer on the pre-gloss toner image.

A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH₃ in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH₃, forming the stack after the pre-treating, and providing a flow of N₂ in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.

Isolation IR heat lamp module and method of firing multi-zone IR furnaces for solar cell processing comprising lamps disposed in individual parallel channels in a reflector/insulator body to provide a cooling air channel surrounding each tube; the channels are covered with IR-transmissive plate material to isolate each lamp from adjacent lamps and the process zone. Cooling air is exhausted and recycled upstream for energy conservation. Lamp spacing can be varied and power to each lamp individually controlled to provide infinite control of temperature profile in each heating zone. For a spike zone, and in combination with downstream quench control and annealing zones, steep heating and cooling curves with very short dwell (sharp) peak temperature profiles permit faster throughput due to operation of the lamps at essentially 100 % rated capacity, at a 2X or greater heating and throughput rate without compromising lamp life, while producing solar cells with improved output efficiency.

The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.

A workpiece is supported on the backside in a vacuum chamber while leaving at least a peripheral annular portion of a backside of the workpiece exposed. The process first increases the temperature of the workpiece starting at a temperature below about 200 degrees C. The edge of the workpiece is confined so as to establish a gap at the edge on the order of about 1% of the diameter of the chamber, the gap corresponding to a boundary between an upper process zone containing the front side and a lower process zone containing the backside. Before the workpiece temperature exceeds about 200 degrees C., backside polymer is removed using a first plasma containing polymer etch species in the lower process zone. After the workpiece temperature reaches about 300 degrees C., photoresist is stripped from the workpiece front side using by-products of a second plasma containing a photoresist strip species in the upper process zone.

Multi-zone, solar cell diffusion furnaces having a plurality of radiant element (SiC) or/and high intensity IR lamp heated process zones, including baffle, ramp-up, firing, soaking and cooling zone(s). The transport of solar cell wafers, e.g., silicon, selenium, germanium or gallium-based solar cell wafers, through the furnace is implemented by use of an ultra low-mass, wafer transport system comprising laterally spaced shielded, synchronously driven, metal bands or chains carrying non-rotating alumina tubes suspended on wires between them. The wafers rest on raised circumferential standoffs spaced laterally along the alumina tubes, which reduces contamination. The high intensity IR flux rapidly photo-radiation conditions the wafers so that diffusion occurs>3× faster than conventional high-mass thermal furnaces. Longitudinal side wall heaters comprising coil heaters in Inconel sheaths inserted in carrier tubes are employed to insure even heating of wafer edges adjacent the side walls.

Multi-zone, solar cell diffusion furnaces having a plurality of radiant element (SiC) or/and high intensity IR lamp heated process zones, including baffle, ramp-up, firing, soaking and cooling zone(s). The transport of solar cell wafers, e.g., silicon, selenium, germanium or gallium-based solar cell wafers, through the furnace is implemented by use of an ultra low-mass, wafer transport system comprising laterally spaced shielded metal bands or chains carrying non-rotating alumina tubes suspended on wires between them. The wafers rest on raised circumferential standoffs spaced laterally along the alumina tubes, which reduces contamination. The bands or chains are driven synchronously at ultra-low tension by a pin drive roller or sprocket at either the inlet or outlet end of the furnace, with appropriate tensioning systems disposed in the return path. The high intensity IR flux rapidly photo-radiation conditions the wafers so that diffusion occurs >3× faster than conventional high-mass thermal furnaces.

The present invention involves a method and apparatus for enhanced recovery of petroleum fluids from the subsurface by injecting a hydrocarbon solvent vapor in contact with the oil sand formation and the heavy oil and bitumen in situ. Multiple propped vertical hydraulic fractures are constructed from the well bore into the oil sand formation. The hydrocarbon solvent vapor and a non-condensing diluent gas are injected into the well bore, fill the hydraulic fractures, and thus contact and diffuse into the in situ bitumen. The hydrocarbon solvent vapors diffuse into the bitumen from the vertical faces of the propped fractures. The bitumen softens and flows by gravity to the well bore, exposing fresh surface of bitumen for the process to progressively soften and mobilizes the bitumen in a predominantly circumferentially, i.e. orthogonal to the propped fracture, diffusion direction at a nearly uniform rate into the oil sand deposit. The mobile oil may be deasphalted by the condensed solvent, leaving the heavy asphaltenes behind in the oil sand pore space with little loss of inherent fluid mobility in the processed oil sands. The processed product is produced with the dissolved solvent along with a tail diluent gas. The tail diluent gas is enriched with hydrocarbon solvent and re-injected into the process zone and the cycle repeated.

The invention discloses a method for studying material mechanics behaviors of a concrete crack process zone. The method includes the steps that original-level concrete samples are manufactured, a crack is prefabricated in the top of each sample, and a steel block is bonded to each crack; the overall dimensions of the samples and the masses of wedge-shaped loading frames are measured; strain gages are arranged on the two sides of the pointed end of the prefabricated crack of each sample; the positions of quartile points are marked at the bottom of each sample; each sample is installed on a testing machine through loading pulleys along with the corresponding wedge-shaped loading frame; a knife edge thin steel plate is installed in the middle of each prefabricated crack; loading is carried out on each sample through the testing machine, and data are collected through a dynamic strain indicator while loading is carried out; images are collected through a high-accuracy CCD camera till the samples are damaged; the collected data and the collected images are processed and analyzed, and analysis results are obtained. According to the method, as the optical method DIC technology is combined with a traditional electrical testing method, the crack initiation toughness of concrete is determined, and harmful cracks of a new concrete structure are effectively prevented.

A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.