124 results about "Process zone" patented technology

A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.

A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.

A system for processing a workpiece includes a plasma immersion implantation reactor with an enclosure comprising a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal. The reactor includes a gas distribution apparatus for introducing a process gas containing a first species to be ion implanted into a surface layer of the workpiece, and inductively coupled source power applicator, and an RF plasma source power generator coupled to the inductively coupled source power applicator for inductively coupling RF source power into the process zone. The reactor further includes an RF bias generator having an RF bias frequency and coupled to the workpiece support pedestal for applying an RF bias to the workpiece. The system further includes a second wafer processing apparatus, and a wafer transfer apparatus for transferring the workpiece between the plasma immersion ion implantation reactor and the second wafer processing apparatus.

A debonder apparatus for debonding two via an adhesive layer temporary bonded wafers includes a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly, and an X-axis drive control. The top chuck assembly includes a heater and a wafer holder. The X-axis drive control drives horizontally the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. A wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer is placed upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly and is carried by the X-axis carriage drive to the process zone under the top chuck assembly and the unbonded surface of the carrier wafer is placed in contact with the top chuck assembly. The X-axis drive control initiates horizontal motion of the X-axis carriage drive along the X-axis while heat is applied to the carrier wafer via the heater and while the carrier wafer is held by the top chuck assembly via the wafer holder and thereby causes the device wafer to separate and slide away from the carrier wafer.

UV-glossing for simplex and duplex prints, wherein an input member having thereon a pre-gloss toner image including UV-curable toner is moved, in non-slip association with a smooth UV-transparent web, jointly with the web through a plurality of process zones sequentially including a heating zone and an exposure zone, thereby producing an output member having a glossed, UV-cured, surface. In the heating zone, at least the outermost toner of the pre-gloss toner image is heated to a molten state in contact with the web. In the exposure zone, with the molten state being maintained, at least the outermost toner which contacts the web is cured by a flux of UV radiation transmitted through the web. In a preferred embodiment, the UV-curable toner is formed as an outer layer on the pre-gloss toner image.

Joining endless polymer materials (3) comprises shining upper material and contact surface between the upper and lower materials by using laser beam (2). The contact surface is transparent the laser beam. The lower material is opaque to the laser beam. The two materials are melted and joined to each other under pressure. Joining endless polymer materials (3) comprises shining upper material and contact surface between upper and lower materials by using laser beam (2). The contact surface is transparent the laser beam. The lower material is opaque to the laser beam. The two materials are melted and joined to each other under pressure. The laser beam and the materials to be joined are moved relative to each other to produce a welded seam running in the longitudinal direction at the contact surface. A process zone (P) is provided. The material is heated continuously to the melting temperature in a preheating zone (I) by using laser beams and is melted in a melting zone (II). An Independent claim is included for polymer materials joining apparatus comprising laser beam, material pressing device, and laser beam producing devices. The laser beam shines through the upper material because of transparency of the upper material and at the contact surface with the lower material. The lower material absorbs the laser beam. The laser beam heats the materials and melts them. The material pressing device joins endless materials. The endless materials are guided through two contra-rotating rollers (17, 18). The rollers press against each other. The first roller is made from a material transparent to a laser beam. The first roller is Tubular. The second roller is made from a material that can be deformed easily at the surface. The laser beam(s) producing devices produces laser beam(s) at the contact surface arranged in the first roller.