The description is given of an arrangement comprising at least one semiconductor component (8; 101-1, 101-2, 101-3), in particular a power semiconductor component for the power control of high currents, in which the at least one semiconductor component (8; 101-1, 101-2, 101-3) has in each case at least two electrical connection pads arranged separately from one another and is arranged on a commoncarrier body (1) in a manner electrically insulated from the latter. Furthermore a first and a second busbar (12, 13) are fixed on the carrier body (1) alongside the at least one semiconductor component (8; 101-1, 101-2, 101-3) and in a manner electrically insulated from the at least one semiconductor component (8; 101-1, 101-2, 101-3). One electrical connection pad of the at least one semiconductor component (8; 101-1, 101-2, 101-3) is electrically connected to the first busbar (12, 13) and another electrical connection pad of said semiconductor component (8; 101-1, 101-2, 101-3) is electrically connected to the second busbar (12, 13). The first and/or the second busbar (12, 13) have/has sections arranged at opposite sides of the semiconductor component (8; 101-1, 101-2, 101-3), wherein a current is applied to the connection pad electrically connected to the relevant busbar (12, 13) from both sections.