1059 results about "Lithium niobate" patented technology

The invention discloses a trigeminal structure spot size converter for a proton exchange waveguide and a preparation method. The trigeminal structure spot size converter sequentially comprises a substrate, an insulating layer and a lithium niobate film layer, the lithium niobate film layer comprises a first waveguide part which is used as an input end of the converter; the second waveguide part is connected with one end of the first waveguide part and is positioned on the same plane as the first waveguide part; a third waveguide portion on the second waveguide portion; the proton exchange waveguide is arranged in the third waveguide part, light is transmitted in the first waveguide part, the second waveguide part, the third waveguide part and the proton exchange waveguide in sequence, and the transverse sizes of the second waveguide part, the third waveguide part and the proton exchange waveguide are sequentially increased in the light transmission direction. The silicon oxynitride waveguide guides light waves in the optical fiber to enter the chip, the light waves in the optical fiber are efficiently guided, the light waves are limited in the silicon oxynitride waveguide and enter the lithium niobate waveguide, and loss caused by light wave diffusion is avoided; a conical waveguide structure is adopted, mode mutation is avoided, and coupling loss is reduced.

The invention provides a dual-polarization tunable mode converter and mode multiplexing system based on thin film lithium niobate, and belongs to the technical field of integrated photonic devices. The lithium niobate film sequentially comprises a substrate layer, a silicon dioxide layer, a lithium niobate film layer and a silicon dioxide cladding. The Mach-Zehnder structure manufactured on the lithium niobate thin film layer is composed of an input waveguide, an output waveguide, two Y-branch waveguides and two asymmetric strip-shaped waveguides. The input waveguide and the two asymmetric strip-shaped waveguides are connected through one Y-branch waveguide, and the output waveguide and the two asymmetric strip-shaped waveguides are connected through the other Y-branch waveguide; by adding a section of wide waveguide and tapered waveguides at two ends, TE and TM fundamental modes have a phase difference of pi with the other arm after passing through a phase shift region, and the phase difference of the front and rear arms is regulated and controlled to change between pi and 0, so that the switching of output modes is realized, and meanwhile, an effect irrelevant to polarization is achieved; and the device has the characteristics of high integration level, insensitive polarization, tunability and large bandwidth.

The invention discloses a preparation method of a lithium niobate film waveguide frequency doubling device based on ferroelectric domain regulation and control. The method comprises the following steps of: spin-coating photoresist on the surface of a lithium niobate film, transferring a pattern by utilizing a photoetching technology, coating a film, stripping to form an electrode, applying high-voltage electric pulse to the electrode, and controlling the size of an electric field in the lithium niobate film and a reversal domain growth process through the material and the thickness of an insulating layer in the electrode, thereby controlling the reversal depth of a ferroelectric domain. And finally, spin-coating the photoresist again, transferring the pattern by photoetching, and performing dry etching to obtain the frequency doubling waveguide device. The frequency multiplication waveguide device preparation method provided by the invention has the characteristics of simple processing method, high device preparation efficiency and low loss, and meets the actual requirements in the fields of nonlinear optics, integrated optics and the like.

The invention belongs to the technical field of integrated optics and inertial sensing, and particularly relates to a thin-film lithium niobate heterogeneous integrated chip configuration for a fiber-optic gyroscope. The thin-film lithium niobate hybrid photon integrated chip is utilized to realize on-chip heterogeneous integration of functional devices of the fiber-optic gyroscope. The discrete optical path device of the gyroscope is monolithic integrated and integrally packaged, the size and cost of the optical path are greatly reduced, optical fiber interconnection is reduced, the complexity of the assembly process is obviously reduced, and the long-term reliability of the performance of the gyroscope is effectively improved. By means of the CMOS technology with mature silicon photons, low-cost and large-scale batch production of the miniature fiber-optic gyroscope can be achieved, and the requirements for miniaturization and light weight of a future weapon system are met.

The invention relates to the field of optical protection materials, and provides a transparent film with laser eavesdropping prevention performance and a preparation method thereof.The transparent film is composed of surface-modified doped tungsten oxide nanosheets, amino-isocyanate bifunctional lithium niobate nanowires, urethane acrylate, an ultraviolet light absorber, a silane coupling agent, a dispersing agent and a flatting agent; the molybdenum-doped tungsten oxide nanosheets are obtained through silane coupling modification after hydrothermal synthesis, and the lithium niobate nanowires are prepared through a gradient modification process of hydrothermal synthesis-silane coupling-isocyanate grafting-phenol end capping. A modified nano material is uniformly dispersed in a resin matrix through an ultrasonic dispersion composite technology, and through blade coating forming, ultraviolet curing and constant-temperature and constant-humidity post-treatment, compared with the prior art, the scheme overcomes the problems that a traditional protective film is insufficient in optical transparency, laser eavesdropping prevention function and dynamic viscoelasticity, and is suitable for the field of high-end security and protection.

A centimeter-resolution integrated photonic millimeter-wave (mmWave) radar chip operating in the mmWave V band based on a 4-inch wafer-scale thin-film lithium niobate (TFLN) technology is provided. The fabricated TFLN photonic mmWave integrated circuit has a first electro-optic modulator (EOM) capable of generating a broadband linear frequency modulated mmWave radar waveform through optical frequency multiplication of a low-frequency input signal, and a second EOM for frequency de-chirp of the reflected echo wave, thereby greatly relieving bandwidth requirements for the digital-to-analog converter in the transmitter and analog-to-digital converter in the receiver. In the absence of optical and electrical filters, the radar chip features continuous on-demand tunability of the center frequency and bandwidth, currently only limited by the bandwidths of electrical amplifiers. The radar chip provides a promising way to achieve high resolution sensing and detection for vehicle radar, airborne radar, and smart home in the 6G era.

The invention discloses a composite modified material for a lithium niobate wafer, and relates to the technical field of nano materials. The material is composed of an anti-corrosion passivation matrix and a function enhancement component, wherein the anti-corrosion matrix adopts a silicon nitride / SiO2 multi-layer composite layer, atomic layer deposition titanium dioxide and magnetron sputtering aluminum oxide to form cascade protection; the functional layer comprises lead sulfide nanoparticles and nano silicon dioxide, and is directionally modified by a silane coupling agent and a perfluoropolyether surfactant. During preparation, PbS nano-particles are synthesized by combining a PECVD-ALD-magnetron sputtering stepped deposition process (200-150 DEG C) with a solvothermal method, and finally, the PbS nano-particles are formed through spin coating-annealing (300-400 DEG C). The optical loss of the material under the wavelength of 1550 nm is smaller than 0.2 dB / cm, the acid and alkali corrosion resistance is larger than 240 h, the lead dissolution rate is smaller than 0.1 ppm, the interface state density is reduced by 2 orders of magnitude, the contradiction between lithium niobate wafer surface degradation, photoelectric property degradation and lead-containing material environment risk is solved, and the material is suitable for 5G optical waveguide and quantum integrated device packaging.

The invention discloses a jitter calibration system and method for a superconducting nanowire single-photon detector. Comprising an FPGA platform used for generating periodic pulse calibration signals, a radio frequency pulse amplifier, a lithium niobate electrooptical modulator and a bias voltage controller thereof, a 1550nm 3kHz linewidth distributed feedback laser, a program control optical attenuator, a three-paddle polarization controller, an SNSPD single photon detector, a multichannel TDC module and an upper computer used for processing data. The calibration method is simple and low in cost, can calibrate a correction curve of the relation between SNSPD detection photon additional jitter and detection recovery time caused by pulse accumulation, compensates additional jitter, and can effectively solve the problem of jitter deterioration generated by SNSPD under a high counting rate in high-speed detection application.

The invention relates to the technical field of optoelectronics, and discloses a compact mixed optical path high-density integration method of a multi-level waveguide composite structure, which comprises the following steps: S1, preparing a multi-material layer: sequentially depositing a silicon layer, a silicon nitride layer and a lithium niobate layer, preparing the silicon layer and the silicon nitride layer through a chemical vapor deposition process, preparing the lithium niobate layer through direct current magnetron sputtering, and preparing the multi-material layer; the refractive indexes of the silicon layer, the silicon nitride layer and the lithium niobate layer meet gradient distribution; s2, designing an interlayer coupling structure: forming a gradient waveguide coupler at an interface of adjacent material layers to realize interlayer light field transmission; and S3, stress regulation and control layer integration: arranging a buffer layer with a matched thermal expansion coefficient between the silicon layer and the silicon nitride layer. According to the invention, the silicon layer, the silicon nitride layer and the lithium niobate layer are sequentially deposited, and the refractive index of each layer satisfies gradient distribution, so that the problems of large light field reflection and scattering loss and low coupling efficiency caused by the fact that most of the traditional multilayer waveguide structures adopt single material layers are solved.

The invention discloses a preparation method of a thin-film lithium niobate electro-optical modulator and the electro-optical modulator, relates to the technical field of optical communication, and can be used for preparing the electro-optical modulator which is relatively small in size, relatively low in preparation difficulty and low in waveguide transmission loss. The method comprises a first substrate, a grating layer located on the first substrate, a target second dielectric film located on the grating layer, the grating layer is formed by etching a first dielectric film, the surface roughness of the target second dielectric film is smaller than 1 nm, and the refractive index of the target second dielectric film is smaller than that of the first dielectric film; the lithium niobate substrate comprises a lithium niobate thin film formed by ion implantation and a target third dielectric film located on the lithium niobate thin film, and the surface roughness of the target third dielectric film is smaller than 1 nm; bonding the target second dielectric film and the target third dielectric film to obtain a bonding structure; stripping the lithium niobate substrate in the bonding structure; and etching the lithium niobate film to form a ridge-shaped waveguide structure layer, and then forming a waveguide transmission covering layer.

The present invention discloses a low crosstalk optoelectronic co-sealed three-axis integrated transceiver module and an optical fiber gyroscope. By arranging the light source assembly, the first to sixth beam splitting prisms, and the lithium niobate thin film waveguide chip, the light signal's splitting, beam combining, polarization, and modulation functions are completed. On this basis, by designing three detectors on the transmission path of the optical signal to be measured, the optical signal to be measured can be detected and photoelectrically converted. Since the optical signal to be measured carries the information of the measured current, the measured current can be finally obtained by analyzing the electrical signal output by the detector through the processing circuit. Through the above scheme of the present invention, the integration of the optical path and the circuit part is realized, forming a three-axis optical and optical receiving and transmitting circuit and an optoelectronic co-sealed design, realizing a three-axis integrated structural design and transceiver function, and having the advantages of miniaturization, low crosstalk, high integration, and high reliability.

An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, and at least one lithium niobate layer and first and second principal surfaces opposed to each other, and first and second IDT electrodes respectively on the first and second principal surfaces. Each of the first and second IDT electrodes includes electrode fingers. A duty ratio of each of the first and second IDT electrodes is equal to or greater than about 0.6. Directions of polarization of the piezoelectric layer are inverted in a thickness direction of the piezoelectric layer.

The invention relates to the technical field of semiconductors, in particular to an electro-optical modulation chip, an electro-optical modulator and a forming method of the electro-optical modulator. A Z-cut film lithium niobate chip plane isotropy and a vertical direction modulation electric field are utilized, the defect of crystal axis inversion before and after waveguide bending in the prior art is overcome, flexible and compact layout is realized, and meanwhile, the characteristic that a vertical electrode structure can be modulated when the waveguide is bent and the structure is changed is utilized, so that the device can be applied to the field of waveguide bending, and the device size is not increased. The length of a modulation area is increased, the modulation efficiency is improved, the defects of phase distortion, amplitude attenuation and the like in an existing modulator are overcome, and the modulator has higher speed and wider bandwidth.

Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a lithium niobate (LN) plate having front and back surfaces and a thickness ts. The back surface is attached to a surface of the substrate. A portion of the LN plate forms a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate with interleaved fingers of the IDT disposed on the diaphragm. The LN plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic wave in the diaphragm. Euler angles of the LN plate are [0°, β, 0°], where 0≤β≤60°. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.8 ts and less than or equal to 2.0 ts.

The invention discloses an 8 * 8 lithium niobate array optical switch, and belongs to the technical field of integrated photon and optical communication. Comprising twenty switch units of Mach-Zehnder interferometer structures, and each switch unit is provided with a modulation arm composed of an upper bent waveguide and a lower bent waveguide and is provided with a push-pull type loading electrode. The switch units are combined in a multi-stage array mode and are connected through crossed waveguides, and the 8 * 8 array non-blocking optical switch is formed by using twenty switch units. According to the invention, the 2 * 2 optical switch units with small size and high modulation efficiency are designed, the transverse size of a modulation arm is shortened by adopting upper and lower bent waveguides, the driving voltage is reduced by combining a push-pull electrode loading technology, and finally the high-density 8 * 8 array optical switch is constructed by twenty units. By utilizing the electro-optical effect of lithium niobate, through the optimization of a bent waveguide structure and the driving of a push-pull electrode, low-power-consumption and high-speed optical path switching is realized, and a high-integration-level routing solution is provided for a high-speed optical communication system.

The invention discloses a lithium niobate film rapid heat insulation 3dB power beam splitter, and relates to the technical field of integrated photons. Comprising an upper cladding layer, an x-cut lithium niobate film layer, a buried oxide layer and a silicon substrate layer which are sequentially stacked from top to bottom, the x-cut lithium niobate layer contains a lithium niobate film ridge waveguide formed by an etching technology; the lithium niobate film waveguide comprises an input end conical waveguide, an input end S-bent waveguide, a rapid adiabatic mode evolution waveguide and an output end S-bent waveguide which are connected in sequence; on the basis of a traditional linear adiabatic cone, nonlinear change is achieved in combination with adiabatic parameters so as to accelerate the adiabatic process, and the excellent characteristics of broadband and robustness of the adiabatic power beam splitter are reserved while the length of the adiabatic power beam splitter is reduced.

The invention discloses a high-purity light metal doped LiNbO3 piezoelectric coating and a preparation method thereof, and relates to the technical field of lithium niobate piezoelectric coatings. The preparation method of the coating comprises the following steps: designing a light metal element doped lithium niobate target material; polishing and cleaning the substrate and magnetron sputtering equipment; mounting a target material and a substrate; the magnetron sputtering equipment is started, and the surface of the target material is cleaned; and depositing a target material to the front surface of the substrate by adopting a radio frequency magnetron sputtering method to prepare the light metal doped lithium niobate piezoelectric coating. Test on structure, morphology, element, ultrasonic performance and piezoelectric performance of the prepared light element doped lithium niobate piezoelectric coating shows that the coating does not contain LiNb3O8 lithium-deficient phase, does not contain impurity phases such as NbO and Nb2O5, and is a high-purity light metal doped LiNbO3 piezoelectric coating. The piezoelectric constant and ultrasonic signal superior to those of a pure lithium niobate piezoelectric coating can be obtained by adjusting doped elements and the content of the doped elements, and the lithium niobate piezoelectric coating has excellent high-temperature performance stability.

An optical device includes a silicon substrate, a waveguide formed of a thin film that is laminated on the silicon substrate and that is made of a perovskite oxide with a large electro-optic effect as compared to lithium niobate, and a cladding layer that covers the waveguide. Further, the optical device includes ground electrode that has a ground potential and a signal electrode that is arranged at a position facing the ground electrode and that applies driving voltage to the waveguide.

An electro-optic device is described. The electro-optic device includes an electro-optic component implemented on an electro-optic material having a slab and a ridge portion. The electro-optic component includes a first portion of the slab and a portion of the ridge portion. The first portion of the slab has a first height. The ridge portion has a second height greater than the first height. A passive functionality component is implemented on a second portion of the slab and is optically coupled with the electro-optic component.

The invention discloses a lithium niobate electro-optical modulator based on interdigital electrodes. The lithium niobate electro-optical modulator comprises a coplanar waveguide electrode structure containing periodically arranged interdigital electrodes, two groups of six modulation waveguides, two groups of four optical waveguide delay lines, two groups of multimode interference couplers, an input waveguide, an output waveguide and a pair of coupling gratings. According to the device, an interdigital electrode structure is used for constructing six electro-optical modulation sections in an upper group and a lower group, and optical waveguide delay lines are used for aligning phases of different electro-optical modulation sections to form an upper group of modulation arms and a lower group of modulation arms. An optical signal enters the input waveguide from the coupling grating on the left side, is divided into two beams through the multi-mode interference coupler, is subjected to equal-size and opposite modulation effects on the upper and lower groups of modulation arms, is combined and coupled in the second multi-mode interference coupler to generate an intensity modulation effect, and is output through the output waveguide and the coupling grating. The electro-optical modulator provided by the invention can be further expanded on the number of times of electrode multiplexing, and is compatible with other multiplexing technologies at the same time.

A miniaturized interferometric integrated photonic gyroscope structure with top silicon oxide, middle silicon oxide and bottom silicon oxide deposited on a silicon substrate comprises broadband optical source or a semiconductor optical amplifier with silicon nitride ring resonator wavelength filter, connected with a thin film lithium niobate or piezoelectrically actuated silicon nitride phase modulator vertically coupled with a silicon nitride waveguide spiral loop. The silicon nitride waveguide spiral loop is patterned on thin bottom oxide layer with air trenches below it and connected with a germanium detector either through photonic wire bonding or vertically integrated through reflecting mirror embedded into silicon wafer. Various methods of coupling alternative materials are described and the potential of connecting several spiral waveguides for enhanced sensitivity in a gyroscope application.

A thin film lithium niobate polarizer and a manufacturing method therefor. The thin film lithium niobate polarizer comprises a substrate layer, an optical waveguide layer and an upper cladding layer; the optical waveguide layer comprises a light input port, a light output port, a slab layer and a ridge waveguide layer, the ridge waveguide layer being disposed on the slab layer; the ridge waveguide layer comprises at least one transmission waveguide section, and two ends of the transmission waveguide section are symmetrically connected with connecting waveguide sections; and the transmission waveguide section is used to filter light in a TM mode in a laser signal, and output light in a TE mode in the laser signal by means of the connecting waveguide section at the other end and the light output port, achieving separation of TM and TE components in the input laser signal, to obtain pure TE light, and thereby achieve a polarizing effect. In addition, using a thin film lithium niobate platform helps to reduce the size of a device, facilitating device integration and chip miniaturization. A standard semiconductor process is used, and the process technology is mature, so that costs can be effectively reduced, and the batch production capacity of the device is improved.

The invention discloses a polarization rotation beam splitter structure based on a lithium niobate film, belongs to the technical field of optical waveguides, and particularly relates to an integrated optical device for realizing polarization rotation and beam splitting of optical signals. The main structure is two linear tapered waveguides and an asymmetric coupler, the structure utilizes the excellent electro-optical characteristics of a lithium niobate film, and through the design of the linear tapered waveguides and an asymmetric directional coupling unit, when light is transmitted along the tapered waveguides which are gradually increased, due to the hybridization between modes, the light transmission efficiency is improved, and the light transmission efficiency is improved. The TM0 mode of narrow band import emission is gradually converted into the high-order TE1 mode, the high-order TE1 mode is coupled through the asymmetric coupler and converted into the TE0 mode to be output, efficient polarization rotation and beam splitting functions between the TM mode and the TE mode are achieved, and potential application prospects are achieved. The polarization rotation beam splitter not only realizes simplification of a device structure, is expected to be applied to efficient polarization multiplexing and polarization modulation, but also provides flexibility for manufacturing a large-scale optical switch array and an optical interconnection network.

The invention relates to a laser radar on-chip integrated chip based on acousto-optic modulation, an on-chip acousto-optic scanning method and a laser radar system. A plurality of groups of interdigital transducers are arranged on the lithium niobate film, two groups of chirp IDTs respectively work at a low-frequency band and a high-frequency band, and sound waves at the low-frequency band correspondingly generate a relatively large Bragg deflection angle; and the high-frequency-band sound waves correspondingly generate a relatively small Bragg deflection angle. The two groups of IDTs work cooperatively, so that two-dimensional vector scanning of a dual-frequency broadband can be realized in a chip plane; the pair of focusing IDTs can form a focusing sound field in an action area, so that the light beam subjected to two-dimensional deflection is controllably deflected in the Z direction, and the chip is endowed with the three-dimensional scanning capability. The device is high in diffraction efficiency and low in power consumption; unification of large-range search and high-precision scanning is realized; z-axis deflection is realized by integrating a special focusing type interdigital transducer, a three-dimensional scanning function is realized on a monolithic integrated acousto-optic chip, and the structure is extremely compact.

A filter device includes first and second acoustic wave resonators each including a support, a piezoelectric layer that has an X-axis, a Y-axis, and a Z-axis that are crystal axes and is made of Y-cut lithium niobate, and an IDT electrode including first and second electrode fingers. When a thickness of the piezoelectric layer is d and a center-to-center distance of the first and second electrode fingers and the second electrode fingers adjacent to each other is p, d / p is less than or equal to 0.5. An absolute value of a first slant angle α1 differs from an absolute value of a second slant angle α2.

According to the Y-type thin-film lithium niobate electro-optical modulator and the manufacturing method provided by the invention, the lithium niobate layer on the electro-optical modulator chip is etched into the corresponding bent waveguide structures, and the two bent waveguide structures are symmetrically arranged on the two sides of the Y-type waveguide structure, so that the height consistency of two optical paths is ensured; according to the bent waveguide structure, the length of the waveguide is guaranteed, meanwhile, the size of the space occupied by the waveguide is reduced, the waveguide with the same length can be carried by adopting a chip with smaller length, and meanwhile, the signal electrode and the ground electrode are arranged on the two sides of each section of straight waveguide in the bent waveguide structure, so that the size of the waveguide is reduced. The optical signal in the waveguide is modulated, and the modulation requirement of the electro-optical modulator is met.

An acoustic wave device includes a silicon single crystal baseplate including a main surface, a piezoelectric layer directly or indirectly on the main surface of the silicon single crystal baseplate, and an IDT electrode on the piezoelectric layer and including electrode fingers. The piezoelectric layer is a lithium niobate layer. In the main surface of the silicon single crystal baseplate, a plane orientation is (111). When Euler angles in the main surface of the silicon single crystal baseplate are (φ, θ, ψ), the ψ in the Euler angles of the silicon single crystal baseplate is about −30 degrees <ψ< about 30 degrees.

The invention discloses an optical frequency comb generation device and method based on lithium niobate film waveguide series connection double micro-rings. The device comprises a first bus waveguide, a first annular waveguide, a second annular waveguide and a second bus waveguide which are etched on a lithium niobate film. Wherein one end of the first bus waveguide is a pump light input end, the other end of the first bus waveguide is an auxiliary light input end, the first bus waveguide and the first annular waveguide are mutually coupled, the first annular waveguide and the second annular waveguide are mutually coupled, the second annular waveguide is a soliton cavity, and a temperature regulation and control device is arranged below the soliton cavity. The temperature of the soliton cavity is regulated and controlled to enable the harmonic peak of the soliton cavity to drift, so that the pump light enters a soliton state, the auxiliary light performs power compensation on the soliton state of the pump light, and a soliton optical frequency comb is generated. In combination with auxiliary photo-thermal modulation, the micro-cavity thermal effect is compensated, the soliton stability is improved, and finally a comb-shaped structure spectrum with stable performance, high coherence and high flatness is output from a soliton cavity port.

This optical modulation element includes a first optical waveguide, a second optical waveguide, a first electrode for applying an electric field to the first optical waveguide, and a second electrode for applying an electric field to the second optical waveguide. The first optical waveguide and the second optical waveguide each include a ridge-shaped portion protruding from a first surface of a lithium niobate film. A first interaction length L1 that is a length of a part of the first electrode overlapping the first optical waveguide in a longitudinal direction is 0.9 mm or more and 20 mm or less. A second interaction length L2 that is a length of a part of the second electrode overlapping the second optical waveguide in the longitudinal direction is 0.9 mm or more and 20 mm or less.

The invention provides a thin-film lithium niobate integrated optical engine for a fiber-optic gyroscope. The thin-film lithium niobate integrated optical engine comprises a substrate, a lower cladding, a lithium niobate thin-film waveguide core layer and an upper cladding, the lithium niobate film waveguide core layer comprises an incident unit, a polarizing unit, a coupling unit, a beam splitting unit, a spot size conversion unit, a phase modulation unit and an emergent unit; the input unit and the polarization unit are gas-phase proton exchange waveguides and naturally have a polarization function; the coupling unit and the beam splitting unit are integrated into a whole, the structure is 2 * 2MMI, and a gas-phase proton exchange process is adopted for preparation; the phase modulation region adopts a lithium niobate film ridge waveguide structure, and coplanar traveling wave electrodes are arranged to realize an electro-optical modulation function; and spot-size conversion structures are additionally arranged between the gas-phase proton exchange waveguide and the ridge waveguide as well as between the ridge waveguide and the output optical fiber, so that mode field matching is realized. According to the embodiment of the invention, the lithium niobate film platform is utilized, and gas-phase proton exchange is combined with a ridge waveguide etching process, so that multiple functions of polarization, coupling, beam splitting, modulation and the like are integrated, the problem of optical coupling loss is solved, and the purposes of miniaturization and low cost of future fiber-optic gyroscopes are achieved.