478 results about "Lithium niobate" patented technology

An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, and at least one lithium niobate layer and first and second principal surfaces opposed to each other, and first and second IDT electrodes respectively on the first and second principal surfaces. Each of the first and second IDT electrodes includes electrode fingers. A duty ratio of each of the first and second IDT electrodes is equal to or greater than about 0.6. Directions of polarization of the piezoelectric layer are inverted in a thickness direction of the piezoelectric layer.

The invention relates to a laser radar on-chip integrated chip based on acousto-optic modulation, an on-chip acousto-optic scanning method and a laser radar system. A plurality of groups of interdigital transducers are arranged on the lithium niobate film, two groups of chirp IDTs respectively work at a low-frequency band and a high-frequency band, and sound waves at the low-frequency band correspondingly generate a relatively large Bragg deflection angle; and the high-frequency-band sound waves correspondingly generate a relatively small Bragg deflection angle. The two groups of IDTs work cooperatively, so that two-dimensional vector scanning of a dual-frequency broadband can be realized in a chip plane; the pair of focusing IDTs can form a focusing sound field in an action area, so that the light beam subjected to two-dimensional deflection is controllably deflected in the Z direction, and the chip is endowed with the three-dimensional scanning capability. The device is high in diffraction efficiency and low in power consumption; unification of large-range search and high-precision scanning is realized; z-axis deflection is realized by integrating a special focusing type interdigital transducer, a three-dimensional scanning function is realized on a monolithic integrated acousto-optic chip, and the structure is extremely compact.

The invention provides an electro-optical modulator and a modulation method thereof, the electro-optical modulator comprises a substrate, a buried oxide layer and a lithium niobate waveguide layer are sequentially stacked on the substrate, and the lithium niobate waveguide layer comprises a first optical waveguide and a second optical waveguide; the electrode layer comprises a composite traveling wave electrode and a direct-current electrode, and the direct-current electrode is arranged on one side, in the signal transmission direction, of the composite traveling wave electrode; wherein the composite traveling wave electrode comprises a metal electrode and a polymer electrode, the metal electrode is embedded into the buried oxide layer, the polymer electrode is arranged on the surface of the buried oxide layer, and the composite traveling wave electrode is arranged between the first optical waveguide and the second optical waveguide and arranged on the side faces of the first optical waveguide and the second optical waveguide respectively; wherein the direct current electrode is arranged between the first optical waveguide and the second optical waveguide. The electro-optical modulator is high in electro-optical conversion efficiency, the plasma effect caused by light field coupling is effectively avoided, and the light loss of the device is remarkably reduced.

The invention relates to the technical field of industrial detection, and discloses a lithium niobate metasurface defect intelligent identification method based on reactive ion beam etching, which systematically solves the problem of scarcity of experimental data through physical driving simulation and a physics-based rendering algorithm, and provides large-scale field specific training data for a deep learning model. The bidirectional coupling simulation model generates defect morphology prediction data conforming to an etching dynamics law based on real process parameters and material parameters, the prediction data is converted into a synthetic image with real microscopic image statistical characteristics by a physical rendering algorithm, and the quality and consistency of the synthetic data are ensured by an automatic labeling and statistical verification process. According to the method, the number of samples of the ternary association database is multiplied, and extreme process conditions and rare defect modes which are difficult to obtain through experimental collection are covered.

The embodiment of the present disclosure provides an optical transceiver and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a substrate, wherein the substrate comprises a substrate, a buried oxygen layer and a lithium niobate layer which are sequentially stacked; the substrate comprises a light modulation area and a light detection area; etching the lithium niobate layer located in the light modulation area to form a thin film lithium niobate waveguide; removing the lithium niobate layer and part of the buried oxygen layer located in the light detection area to form a groove; the bottom of the groove exposes the substrate; forming a light absorption layer in the groove; wherein the thin film lithium niobate waveguide is used for modulating an optical signal and outputting the modulated optical signal; and the light absorption layer is used for detecting the modulated optical signal and converting the modulated optical signal into an electrical signal.

The invention relates to the technical field of spot-size converters, and discloses a lithium niobate film spot-size converter with an asymmetric trident structure and a preparation method of the lithium niobate film spot-size converter with the asymmetric trident structure. The lithium niobate film waveguide layer is positioned on the insulating layer; the silicon dioxide layer is coated on the lithium niobate film waveguide layer; the silicon nitride waveguide layer is located on the silicon dioxide layer; the silicon nitride waveguide layer comprises a first waveguide part, a second waveguide part and a third waveguide part which are connected in sequence in the direction from the input end to the output end of the lithium niobate film spot size converter, and the first waveguide part, the second waveguide part and the third waveguide part are located on the same plane; in the light wave transmission direction, the transverse size of the second waveguide part is sequentially increased, and the transverse size of the third waveguide part is sequentially reduced; according to the invention, the process preparation difficulty is low, high-efficiency coupling with the coupling efficiency of more than 90% from the silicon nitride waveguide to the lithium niobate waveguide can be realized, and the optical fiber coupling alignment tolerance and overlay tolerance as well as the overall coupling efficiency of the spot size converter are improved.

The invention provides a film lithium niobate chip optical fiber coupling machine vision alignment control method, which comprises the following steps: acquiring a high-resolution image of a waveguide end surface of a film lithium niobate chip, and extracting a multi-structure vision representation set from the high-resolution image; determining an effective action area of the mode field by combining the emergent light intensity distribution and geometric constraint provided by the boundary of the side wall; calculating an energy weighted center based on the light intensity distribution in the effective action area of the mode field, and mapping the energy weighted center to an assembly platform coordinate system to obtain an optical coupling reference center for alignment; with the optical coupling reference center as a target, the position and posture of the optical fiber are adjusted through feedback control, so that the center of an optical fiber core approaches and aligns to the optical coupling reference center; after alignment is completed, the stable optical fiber pose is evaluated and locked, the final coupling pose and performance indexes are output, the problem of decoupling of the visual reference and the real optical reference can be solved, and low-loss and high-stability coupling between the thin-film lithium niobate chip and the optical fiber is achieved.

The invention provides a heterogeneous integrated sub-wavelength structure end face coupler adaptive to a single-mode optical fiber and a preparation method of the heterogeneous integrated sub-wavelength structure end face coupler, and relates to the technical field of integrated optics. The coupler comprises a substrate, an insulating layer, a waveguide layer and a cladding from bottom to top. The waveguide layer comprises an upper lithium niobate ridge waveguide and a lower lithium niobate ridge waveguide, the lower waveguide is wider than the upper waveguide, and the upper waveguide is used for connecting an external waveguide; the heterogeneous integrated coupling region comprises a silicon nitride strip conical waveguide which forms directional coupling with the lower-layer lithium niobate waveguide, so that adiabatic transfer of a light field is realized; the sub-wavelength grating regulation and control region sequentially comprises a silicon nitride tapered waveguide and sub-wavelength grating combination section, a width gradually-changing grating section and an equal-width buffer grating section. The whole structure is symmetrical about the central axis. Through the multi-section adiabatic transformation and heterogeneous integration design, efficient expansion of a mode field is achieved, the coupling efficiency with a single-mode fiber is improved, and the advantages of being insensitive to polarization, good in process compatibility and suitable for high-density integration are achieved.

The application provides a Y-shaped thin film lithium niobate electro-optical modulator and a manufacturing method. A lithium niobate layer on an electro-optical modulator chip is etched into a corresponding curved waveguide structure, and two curved waveguide structures are symmetrically arranged on both sides of the Y-shaped waveguide structure, so that the heights of two light paths are consistent. The curved waveguide structure reduces the space size required by the waveguide while ensuring the waveguide length. For the waveguide with the same length, a chip with a smaller length can be used for mounting. The signal electrode and the ground electrode are arranged on both sides of each straight waveguide in the curved waveguide structure, the optical signal in the waveguide is modulated, and the modulation requirement of the electro-optical modulator is realized.

The invention discloses a lithium niobate electro-optical polarization modulator based on an adiabatic coupling structure and a modulation method thereof. The modulator comprises a first adiabatic coupling polarization beam splitting rotator, an electro-optical phase modulator and a second adiabatic coupling polarization beam splitting rotator, wherein each adiabatic coupling polarization beam splitting rotator comprises an input waveguide, an adiabatic coupler and a separation waveguide. According to the modulation method, transmission is carried out through a straight-through end in a first adiabatic coupling type polarization beam splitting rotator, and TE0 is kept unchanged; when the input light is TM0, the input light is converted into TE0 through the first adiabatic coupling type polarization beam splitting rotator and is transmitted through the cross end. And after phase modulation is carried out by the electro-optic phase modulator and beam combination is carried out by the second adiabatic coupling type polarization beam splitting rotator, output light is remapped into TE0 and TM0, and the polarization state is determined by the relative phase difference, so that dynamic regulation and control of the polarization state are realized.

An acoustic wave device is disclosed. The acoustic waved device can be a shear horizontal mode surface acoustic wave device. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The piezoelectric layer can be a lithium niobate layer with a cut angle in a range of −20° YX to 25° YX. The interdigital transducer electrode including a first layer and a second layer. The first layer affects acoustic properties of the acoustic wave device and the second layer affects electrical properties of the acoustic wave device. The second layer is positioned between the piezoelectric layer and the first layer such that a frequency response of the acoustic wave device includes a Rayleigh mode response at a frequency higher than a shear horizontal mode response.

The invention relates to a phase shift Bragg grating structure wavelength division multiplexer based on a barium titanate platform, and belongs to the technical field of optoelectronic integration. The device comprises a directional coupler, a multi-mode power divider, an unequal-width waveguide and a phase-shift Bragg grating, and pi / 2 phase difference is introduced to an upper arm and a lower arm through the unequal-width waveguide, so that reflected light of the phase-shift Bragg grating is converted into a TEmode; coupling the reflected TEmode to a subordinate device by using a directional coupler, and outputting transmission light in the TEmode; the transmission / reflection wavelength (the single-channel bandwidth is 0.5 nm) is changed by adjusting the grating period, and more than 10 multiplexing channels can be expanded through cascade connection. The limitation that a traditional phase shift grating only transmits output is broken through, a reflecting end multiplexing function is added, TE / TE dual-mode operation is supported, and the phase shift grating has the advantages of independent and controllable channels, low loss and flexible and adjustable wavelength, is suitable for optical communication, optical calculation and high-density optical interconnection systems, and is compatible with various material platforms such as barium titanate, lithium niobate and SOI (Silicon On Insulator).

The invention relates to the technical field of integrated photoelectron and electro-optical modulation, in particular to a thin-film lithium niobate electro-optical modulator structure and a preparation method of the thin-film lithium niobate electro-optical modulator structure. The buried layer is located on the upper surface of the substrate; the partially-etched thin film lithium niobate layer comprises a partially-etched thin film lithium niobate flat plate layer and a thin film lithium niobate ridge waveguide, the partially-etched thin film lithium niobate flat plate layer is located on the upper surface of the buried layer and exposes a part of the buried layer, and the thin film lithium niobate ridge waveguide is located on the partially-etched thin film lithium niobate flat plate layer; the partially-etched buffer layer is located on the partially-etched thin film lithium niobate layer, and the side wall of the partially-etched thin film lithium niobate flat plate layer is exposed; and the metal electrode is in electric contact with the side wall of the partially etched thin film lithium niobate flat plate layer. Therefore, the problems of low-frequency modulation waveform distortion, direct-current bias point drift and the like caused by electro-optical relaxation and electric field shielding of a related thin-film lithium niobate electro-optical modulator are solved.

The invention relates to a reconfigurable metasurface analog calculator based on a lithium niobate film. The reconfigurable metasurface analog calculator comprises a substrate and a lithium niobate unit, the plurality of lithium niobate units are periodically arranged on the substrate to form a metasurface structure, and the cross section of each lithium niobate unit is an isosceles trapezoid; incident light vertically enters the metasurface structure, and the transmission coefficient and phase distribution of the metasurface structure are changed by changing external bias voltage applied to the lithium niobate units, so that conversion and reconstruction of a mathematical operation function are realized; the mathematical operation comprises first-order differential operation, second-order differential operation and integral operation. According to the invention, different external bias voltages are applied to the periodically arranged lithium niobate units, so that the transmission coefficient and phase distribution of incident light by the metasurface structure can be accurately regulated and controlled, and the same metasurface device can be flexibly switched among different mathematical operation functions such as first-order differential, second-order differential and integral. And various calculation functions can be realized without changing a physical structure.

The invention provides a front-side-bonded heterogeneous integrated chip and a preparation method thereof. A silicon nitride waveguide layer of the heterogeneous integrated chip is arranged on a silicon waveguide layer and is coupled with the silicon waveguide layer; the lithium niobate waveguide layer is arranged on one side, deviating from the silicon waveguide layer, of the silicon nitride waveguide layer and is coupled with the silicon nitride waveguide layer; the lithium niobate waveguide layer comprises a first sub-waveguide layer and a second sub-waveguide layer which are connected with each other, the second sub-waveguide layer is arranged on one side of the silicon nitride waveguide layer, orthographic projections of the second sub-waveguide layer and the silicon nitride waveguide layer on the silicon waveguide layer are mutually overlapped, and the first sub-waveguide layer is arranged on one side, deviating from the silicon nitride waveguide layer, of the second sub-waveguide layer; the silicon nitride waveguide layer is used as an intermediate coupling layer, and the silicon waveguide layer and the lithium niobate waveguide layer are integrated on the same chip, so that the chip has the advantages of a silicon optical chip and lithium niobate; and moreover, the lithium niobate waveguide can be allowed to adopt a contact type photoetching process with a larger line width, so that the etching difficulty and the equipment cost can be reduced.

The lithium niobate-silicon nitride waveguide structure comprises a silicon substrate layer, a first silicon oxide isolation layer, a second silicon oxide isolation layer, a lithium niobate thin film layer and a silicon oxide dielectric layer which are stacked in sequence, the second silicon oxide isolation layer is wrapped with a silicon nitride layer; the thickness of the second silicon oxide isolation layer between the silicon nitride layer and the lithium niobate thin film layer is 50 + / -10nm; the thickness of the silicon nitride layer is 400 + / -10nm, and the thickness of the lithium niobate film layer is 600 + / -50nm; the silicon oxide dielectric layer is provided with at least two electrodes which are arranged at intervals. According to the lithium niobate-silicon nitride waveguide structure, the preparation method and the optical gyroscope provided by the invention, on the basis of the advantages of silicon nitride and lithium niobate materials, an ultra-low-loss silicon nitride waveguide, an ultra-high-Q-value micro-ring resonator and a high-modulation-rate lithium niobate modulator are obtained at the same time through a lithium niobate and silicon nitride hybrid integration method; and thus, the overall performance of the resonant integrated optical gyroscope is improved.

A non-interferometric thin film lithium niobate electro-optical modulator for data transmission including a laser, configured to generate an input continuous wave light beam; a non-interferometric thin film lithium niobate modulator including an optical waveguide situated along with the coplanar transmission lines and the DC bias conductors. The propagation constant of the optical waveguide is tuned and modulated by the RF data signal and the DC bias voltage traveling on the coplanar transmission lines and the DC bias conductors. The modulator can be tuned at quadrature point by the DC bias voltage. The optical power can be modulated by the RF data signal travelling on the coplanar transmission line; a low noise RF amplifier for data signal amplification; and a bias tee for combining the data signal and DC bias voltage and send them to the coplanar transmission lines.

The invention relates to the technical field of radio frequency filters, in particular to a 13GXBAR filter design method based on a lithium niobate film. The Euler angle of the lithium niobate thin film is subjected to simulation setting in finite element simulation software, admittance responses under different cutting angles are obtained, an admittance curve with a large electromechanical coupling coefficient and complete stray mode suppression is obtained, the tangential angle is used for simulating an electrode material, the interdigital logarithm, the interdigital distance, the thin film thickness and the metallization ratio, and an admittance curve with a large electromechanical coupling coefficient and complete stray mode suppression is obtained. The method comprises the following steps of: constructing a plurality of resonators, obtaining impedance of each resonator, obtaining material parameters of the corresponding resonator, constructing a three-dimensional force-electricity coupling model of the lithium niobate resonator, carrying out layout design on the physical model in finite element simulation software through a field-circuit coupling method, and coupling force-electricity-sound multi-physical fields to obtain an S parameter curve of the designed XBAR filter; and whether the S parameter result is consistent with the target is verified, so that the forward design of full-simulation driving is realized.

An electro-optic device is described. The electro-optic device includes a thin film electro-optic layer including lithium and a lithium barrier structure. The thin film electro-optic layer has a plurality of surfaces. The lithium barrier structure covers at least a portion of the plurality of surfaces.

This invention belongs to the field of wavelength division multiplexing optical communication technology, specifically relating to a reverse coupler based on a thin-film lithium niobate platform. The reverse coupler includes: a lithium niobate-on-insulator substrate, a first waveguide, a second waveguide, and a coupling region. The first and second waveguides are disposed in the device layer of the lithium niobate-on-insulator substrate. The first and second waveguides are arranged in parallel along the light propagation direction within the coupling region. A periodic grating perturbation structure is disposed on the first and / or second waveguides. This reverse coupler utilizes the grating perturbation structure to ensure that the modes of the two waveguides satisfy the phase matching condition. The optical signal input to one waveguide is reverse-coupled to the falling port of the other waveguide. Utilizing the large photoelectric coefficient of lithium niobate material, this reverse coupler can tune its spectrum under specific conditions by applying a voltage.

The utility model relates to a lithium niobate end face coupler, including substrate: the lower cladding layer, covering layer are sequentially equipped from below to above on the substrate, the upper end of lower cladding layer is sequentially equipped with first flat plate structure and first waveguide structure from below to above, and first waveguide structure is located the upside of bottom layer first flat plate structure, and first flat plate structure and first waveguide structure are located in covering layer, and first flat plate structure includes first flat plate layer and the second waveguide structure located the upside of first flat plate layer, wherein, the thickness of first flat plate layer is 1nm 30nm, and the thickness of first flat plate layer is less than the thickness of second waveguide structure, the utility model discloses a lithium niobate end face coupler adds first flat plate layer, significantly reduces the coupling loss of thin film lithium niobate end face coupler, is favorable to the mass production of lithium niobate end face coupler.

An optical device is described. At least a portion of the optical device includes lithium niobate and is fabricated utilizing ultraviolet lithography. In some aspects the at least the portion of the optical device is fabricated using deep ultraviolet lithography. In some aspects, the short range root mean square surface roughness of a sidewall of the at least the portion of the optical device is less than ten nanometers. In some aspects, the at least the portion of the optical device has a loss of not more than 2 dB / cm.

The invention relates to the technical field of lithium niobate modulators, in particular to a silicon-based thin-film lithium niobate modulator integrated with optical storage and a manufacturing method of the silicon-based thin-film lithium niobate modulator. The SiO2 buried layer is located above the silicon substrate; the electro-optical modulation unit is located in a first area above the SiO2 buried layer and comprises a thin film lithium niobate layer, a first silicon optical waveguide and a first electrode system; the nonvolatile photon storage unit is located in the second area of the silicon substrate and connected with the first area through an optical waveguide, and the nonvolatile photon storage unit comprises a second silicon optical waveguide, a transition metal oxide functional layer and a second electrode system; the first silicon optical waveguide and the second silicon optical waveguide are connected with each other through the on-chip silicon optical waveguide to form an optical signal processing link, so that high-speed electro-optical modulation and nonvolatile weight storage can be realized on the same chip; the problems of mismatching of material systems, conflict of process temperature budget, large waveguide interconnection loss, serious thermal crosstalk, immature integration process and the like in the prior art are solved.

The application discloses a method for stably preparing a nonlinear frequency conversion device and a corresponding wideband tunable laser, wherein duty cycle modulation is realized by deleting a specific position electrode distribution instead of precisely operating electrode width, so that the stability of the preparation process is greatly improved. In addition, by selecting, for example, magnesium-doped lithium niobate material to prepare the nonlinear frequency conversion device, a wideband optical window is ensured, by chirping the polarization lithium niobate along the light propagation direction, the frequency conversion spectrum is expanded, and by modulating the polarization duty cycle, the tuning curve is optimized, and the output power fluctuation is reduced.

The invention relates to the technical field of semiconductors, in particular to a wafer-level lithium niobate quantum waveguide etching depth real-time prediction method, which specifically comprises the following steps of: dividing an etching region into a plurality of etching space partitions, and constructing an etching space partition identifier set; collecting an etching physical quantity set and plasma emission characteristic intensity, and binding the etching physical quantity set and the plasma emission characteristic intensity with the corresponding etching space partition identifiers to form an etching process characteristic sequence set; quantifying the etching rate evolution condition, and independently accumulating the etching rate to obtain an evolution result set; comparing the etching depth with a target etching depth region by region; meanwhile, the etching depth difference of the etching space partitions is judged, and the quantum waveguide position with the over-etching or under-etching risk is recognized. According to the invention, the problems of local degradation of the optical performance of the wafer-level lithium niobate quantum waveguide and reduction of the yield of devices in the prior art are solved.

The invention discloses a lithium niobate eight-channel beam splitter capable of being used for an optical phased array. The lithium niobate eight-channel beam splitter comprises a silicon substrate, a silicon dioxide buffer layer, a lithium niobate core layer and a silicon dioxide cladding, the silicon dioxide buffer layer is attached to the silicon substrate, and the lithium niobate core layer is arranged on the silicon dioxide buffer layer; the silicon dioxide cladding is attached to the lithium niobate core layer and wraps the lithium niobate core layer; the lithium niobate core layer comprises an input section, a multi-mode interference coupling section and an output section which are connected in sequence, and the wide end of the input conical waveguide section is connected with one side of the multi-mode interference coupling section; and the wide ends of the eight output conical waveguide sections are connected with the other side of the multimode interference coupling section. The beam splitter is manufactured based on lithium niobate, is small in size, compact in structure, simple to process, large in manufacturing tolerance and high in product yield, and can realize uniform beam splitting in a working wave band.

The invention discloses a gas spectrum transparent transmission light path system for hydrogen and hydride, which relates to the technical field of spectral analysis and comprises a wide-spectrum light source module, a multi-pass optical path pool, a film lithium niobate modulation module, a two-dimensional material enhanced micro-ring resonant filter, a Fourier transform infrared spectrometer, a data processing terminal and a polarization controller. The wide-spectrum light source module is used for generating wide-spectrum light signals covering hydrogen and hydride characteristic absorption wavebands; according to the invention, the wide-spectrum light source module covers hydrogen and hydride characteristic absorption in different wavebands, simultaneous detection of multiple components is realized in combination with the wide tuning range of the two-dimensional material enhanced micro-ring resonant filter, wavelength modulation is carried out by utilizing the thin-film lithium niobate modulation module, adjacent absorption peaks are accurately distinguished in cooperation with the transmission bandwidth of the micro-ring filter, and the detection accuracy is improved. In addition, the action path is prolonged through the multi-pass optical path pool, and the detection sensitivity of weak absorption signals is enhanced in combination with pressure control and the corrosion-resistant gas chamber.

The application discloses a kind of bound state thin film lithium niobate optical filter based on quasi continuum body.The optical filter is sequentially stacked from top to bottom by tunable filter layer, thin film lithium niobate flat plate, dielectric buried oxygen layer and substrate layer, heating electrode and reflective grating are distributed on both sides of waveguide, periodically arranged reflective grating is arranged between heating electrode and waveguide, the width of waveguide is set to realize bound state in continuum, reduce the lateral leakage loss caused by mode leakage, reflective grating is used to reflect the mode leaked into lithium niobate flat plate back to waveguide to further realize bound state in quasi continuum, heating electrode is used to change the effective refractive index of reflective grating.The application is easy to process, has large tolerance, low loss, and can effectively realize low-loss, narrow-bandwidth photonic filtering, by changing the voltage loaded on the heating electrode to control the center wavelength of the filter without changing the physical structure, filters with different reflection center wavelengths can be realized.

The invention belongs to the technical field of integrated optical devices, and discloses a compact, high-efficiency and large-bandwidth thin-film lithium niobate end face coupler for large die spots, which comprises a substrate and an insulating layer, the single-layer back taper film lithium niobate waveguide layer, the first double-layer back taper film lithium niobate waveguide layer and the second double-layer back taper film lithium niobate waveguide layer are arranged on the insulating layer; the low-refractive-index waveguide layer is arranged in front of the thin-film lithium niobate waveguide, and the thin-film lithium niobate waveguide is covered with the three-dimensional tapering low-refractive-index waveguide wrapping layer. According to the invention, the coupling efficiency and bandwidth are improved by optimizing the low-refractive-index waveguide layer and matching with the mode of a laser chip large spot; the optical mode is efficiently and compactly coupled to the second double-layer inverted-cone waveguide layer by means of the single-layer and double-layer inverted-cone thin film lithium niobate waveguide layers in cooperation with the three-dimensional tapering low-refractive-index waveguide cladding layer and the transition cladding layer.

The invention discloses an integrated optical chip processing method for improving the full-temperature stability of a lithium niobate electro-optical modulation coefficient. The method comprises the steps that S1, the surface of an integrated optical chip is coated with a layer of photoresist with the thickness ranging from 20 micrometers to 30 micrometers, and thermocuring treatment is conducted after bonding; s2, two to-be-ground and polished end face areas of the integrated optical chip are each bonded with an accompanying piece through removable pyrolysis glue, and UV curing is carried out after bonding; s3, the integrated optical chips bonded with the accompanying chips are bonded with pyrolysis glue, and UV curing treatment is carried out; and S4, after the end face is processed, the assembly is soaked in warm water at the temperature of 85 DEG C to remove the pyrolysis glue, separation of the integrated optical chip and the chip and separation of the accompanying chip and the chip are completed, after the chip is completely separated, the chip is soaked in acetone at the normal temperature to remove the photoresist on the surface, and processing of the end face of the integrated optical chip is completed.