43 results about "Ferroelectric semiconductors" patented technology

The invention discloses a ferroelectric semiconductor junction field effect transistor, a preparation method and application. The transistor can simultaneously realize optical sensor, storage, synapse and logic in a single device by utilizing the physical characteristics of the transistor. The structure comprises a source electrode, a drain electrode, a control grid electrode, a channel layer, a ferroelectric grid layer, an oxide layer and a substrate from top to bottom. The channel layer is made of a two-dimensional transition metal sulfide semiconductor material, the ferroelectric gate layer is made of a two-dimensional ferroelectric semiconductor material, the source electrode and the drain electrode are located on two layers of the two-dimensional semiconductor channel respectively, and the control gate is located over the ferroelectric gate layer. According to the preparation method and application of the ferroelectric semiconductor junction field effect transistor, the logic functions of optical signal sensing, data storage, synaptic calculation and self-switching can be integrated in a single transistor, the function discrete limitation of a traditional device is broken through, a new path is provided for a high-density integrated reconfigurable electronic device, and the field effect transistor is suitable for large-scale popularization and application. And the structure complexity and the function density are effectively balanced.

The photoelectric regulation and control polymorphic nonvolatile memory based on the Van der Waals ferroelectric semiconductor sequentially comprises an insulating substrate, a bottom metal electrode, a ferroelectric gate medium, an insulating layer h-BN, a conducting channel layer, a source metal electrode and a drain metal electrode from bottom to top, and the source metal electrode and the drain metal electrode are connected with the two ends of the conducting channel layer respectively. The ferroelectric gate dielectric layer is made of a two-dimensional Van der Waals ferroelectric semiconductor material In2Se3, and the conductive channel layer is made of a two-dimensional Van der Waals ferroelectric semiconductor material InSe. According to the invention, a resistance state modulation window is formed based on grid voltage and source-drain voltage polarization, and charge injection and extraction from a channel are controlled in a combined manner. The prepared device stores multi-state information through two saturated polarizations, and realizes more storage states by means of regulation and control of positive and negative domain ratios.

The invention discloses a self-rectification ferroelectric memristor based on ferroelectric surface external polarization and a preparation method thereof. The memristor is of a vertical structure comprising an upper electrode layer, a ferroelectric layer and a semiconductor layer from top to bottom, the ferroelectric layer is a ferroelectric semiconductor with out-of-plane ferroelectric polarization; the out-of-plane polarization direction of the ferroelectric layer is perpendicular to the upper electrode layer / ferroelectric layer interface and the ferroelectric layer / semiconductor layer interface at the same time, the two contact surfaces form an asymmetric barrier, and the out-of-plane polarization state of the ferroelectric layer can be changed through external voltage, so that the barrier height of the two contact surfaces is changed, meanwhile, the carrier transport characteristic of the semiconductor layer is changed, and the performance of the device is improved. And therefore, a function of regulating and controlling the conductivity state of the memristor is achieved. The conduction current of the memristor is measured through a peripheral circuit and is used as a storage value. High-resistance and low-resistance switching and rectification characteristics are realized by utilizing the change of the contact potential barrier of the ferroelectric layer and the silicon interface in the polarization overturning process. The memristor is simple in structure, easy to integrate and low in power consumption.

The invention relates to the field of semiconductor materials, in particular to a novel nonvolatile organic ferroelectric semiconductor storage material. In view of limitation of a traditional storage technology and existing problems of an organic ferroelectric material, the molecular structure of the material is innovatively designed, and synthesis, doping and film forming processes are optimized. The obtained material is high in polarization performance, high in stability, efficient in preparation and stable in quality, is successfully applied to the fields of flexible storage and Internet of Things storage, also has the advantages of low temperature, self-repairing and miniaturization, and powerfully promotes the innovation of a storage technology.

Disclosed are a ferroelectric semiconductor thin film, a method of forming the ferroelectric semiconductor thin film, a transistor, a memory device and an integrated circuit. The method of forming the ferroelectric semiconductor thin film includes preparing a precursor solution including an indium precursor and a selenium precursor, and performing spray pyrolysis of the precursor solution on a substrate to obtain the ferroelectric semiconductor thin film including a polycrystalline γ-In2Se3 layer.

The invention relates to a programmable non-volatile ferroelectric Schottky diode and a manufacturing method thereof. The programmable non-volatile ferroelectric Schottky diode comprises a control structure which comprises an insulating layer and a conductive layer; the diode structure is located on the side, opposite to the conducting layer, of the insulating layer, the diode structure comprises a ferroelectric semiconductor layer and a semimetal layer, the material of the ferroelectric semiconductor layer comprises two-dimensional alpha-In2Se3, the semimetal layer is in Schottky contact with the ferroelectric semiconductor layer, and the material of the semimetal layer comprises two-dimensional 1T '-MoTe2. The programmable non-volatile ferroelectric Schottky diode fills the technical blank of application of ferroelectric materials.

Described herein is a method of fabricating a ferroelectric material, comprising the steps of: providing a semiconductor substrate; treating the semiconductor substrate with an oxidant to form an oxidized surface; depositing a metal on top of the oxidized surface to provide a film; and annealing the film at a temperature between 700°C and 900°C, thereby forming a metal oxide layer on top of the semiconductor substrate, wherein the interface between the semiconductor substrate and the metal oxide layer does not contain any remnant oxidized surface, and a ferroelectric material and a ferroelectric transistor or capacitor comprising said ferroelectric material.

The application discloses a self-rectifying ferroelectric memristor based on ferroelectric out-of-plane polarization and a preparation method thereof. The memristor is vertically structured from top to bottom as an upper electrode layer, a ferroelectric layer and a semiconductor layer. The ferroelectric layer is a ferroelectric semiconductor with out-of-plane ferroelectric polarization. The out-of-plane polarization direction of the ferroelectric layer is perpendicular to the upper electrode layer / ferroelectric layer interface and the ferroelectric layer / semiconductor layer interface at the same time. Two contact surfaces form an asymmetric potential barrier. The out-of-plane polarization state of the ferroelectric layer is changed by an external voltage, thereby changing the potential barrier height of the two contact surfaces and the carrier transport characteristics of the semiconductor layer, and further achieving the regulation function of the conductive state of the memristor. The on-current of the memristor is measured by a peripheral circuit as a storage value. The application realizes the switching of high resistance and low resistance and the rectification characteristic by using the change of the contact potential barrier of the ferroelectric layer and the silicon interface in the polarization reversal process. The memristor has simple structure, is easy to integrate and has low power consumption.

The invention provides a ferroelectric semiconductor floating gate transistor. The ferroelectric semiconductor floating gate transistor sequentially comprises a floating gate layer, a tunneling layer and a channel layer from bottom to top, wherein the channel layer is made of a ferroelectric semiconductor material. The invention also provides a method for preparing the ferroelectric semiconductor floating gate transistor. The ferroelectric semiconductor floating gate transistor provided by the invention can realize multi-valued storage, and has reconfigurable three-terminal and two-terminal operation modes. In addition, the ferroelectric semiconductor floating gate transistor can also realize floating gate adjustable ferroelectric resistance change (FRS) and three-valued logic of optical and electric pulse mixed input, so that the function of the device is further expanded, and the ferroelectric semiconductor floating gate transistor is expected to be applied to memristors and memory logic.

This application discloses a two-dimensional germanium-based perovskite ferroelectric semiconductor material, its preparation method, and its applications, belonging to the field of materials science. The molecular formula of the two-dimensional germanium-based perovskite ferroelectric semiconductor material is [CH3(CH2)]. n The molecule is NH3]2CsGe2I7, where n = 2, 3, or 4. This material possesses excellent physicochemical properties, such as semiconductor characteristics, ferroelectricity, and piezoelectricity. The preparation method of this invention allows for the preparation of this material using a simple solution method at low cost. This material has potential applications in ferroelectric, optoelectronic, and other fields.

The invention belongs to the technical field of photoelectric detectors, discloses a photoelectric detector based on ferroelectric / semiconductor heterojunction and a preparation method thereof, and solves the problems of limited carrier separation efficiency, complex device structure, insufficient interface regulation and control means and the like in the photoelectric detector. The photoelectric detector comprises a substrate, a planar electrode pair arranged on the surface of the substrate, and a two-dimensional heterojunction active layer which covers and is attached to the planar electrode pair and a channel region between the planar electrode pair; wherein the two-dimensional heterojunction active layer is formed by vertically stacking a CuInP2S6 thin film and a GeSe thin film in sequence. By constructing a Van der Waals heterojunction active layer and utilizing a built-in electric field formed on a heterojunction interface by ferroelectric polarization, the generation, separation and transmission processes of photon-generated carriers are effectively regulated and controlled, so that the photoelectric detection performance of the device is improved on the premise of not introducing a complex process.

The invention provides a heterogeneous phototransistor based on double ferroelectric layers and a preparation method and application of the heterogeneous phototransistor, and belongs to the technical field of high-performance sensing and sensing, storage and calculation integration. The heterogeneous phototransistor comprises a bottom gate substrate, a bottom gate dielectric layer and a heterostructure which is sequentially stacked on the bottom gate dielectric layer, the heterostructure is composed of a ferroelectric semiconductor bismuth oxygen selenium layer, a bismuth selenite dielectric layer and a ferroelectric semiconductor alpha-phase indium selenide layer, and source and drain electrodes are arranged on the two sides of the ferroelectric semiconductor alpha-phase indium selenide layer. According to the invention, the directional sensitive response to linear polarized light is realized by utilizing the structural symmetry breaking characteristic of the ferroelectric semiconductors in the double-ferroelectric-layer structure, and meanwhile, through the polarization coupling effect between the two layers of ferroelectric semiconductors and the assistance of the middle bismuth oxyselenite dielectric layer for inhibiting electrostatic energy and blocking carrier migration, the linear polarized light can be effectively absorbed. And the polarization state is effectively stabilized, so that the device has remarkable non-volatile electrical characteristics. According to the invention, in-situ encryption of the optical information at the sensing end can be realized.

The invention discloses a novel device structure based on a two-dimensional ferroelectric semiconductor material. The novel device structure based on the two-dimensional ferroelectric semiconductor material comprises a back gate layer; the first insulating layer is positioned on the surface of the back gate layer; the control gate electrode / floating gate is positioned on the surface of the first insulating layer; the second insulating layer is positioned on the surface of the control gate / floating gate; the ferroelectric semiconductor layer is positioned on the surface of the second insulating layer; the source electrode and the drain electrode are located on the surface of the ferroelectric semiconductor layer. According to the ferroelectric semiconductor-floating gate field effect transistor (FeS-FGFET) structure, the excellent ferroelectric characteristic of a two-dimensional ferroelectric semiconductor is fused, the advantages of a floating gate structure are combined, carrier distribution in a channel is allowed to be accurately regulated and controlled by applying grid voltage, and then adjustability in the hysteresis direction of a transfer characteristic curve is achieved; the internal mechanism relates to the conversion of the ferroelectric effect from local polarization to all polarization, and the mutual competition between ferroelectricity and floating gate charge storage.

The present application relates to a programmable non-volatile ferroelectric Schottky diode and a method for manufacturing the same. The programmable non-volatile ferroelectric Schottky diode comprises: a control structure comprising an insulating layer and a conductive layer; and a diode structure, the diode structure being located on the side of the insulating layer facing away from the conductive layer. The diode structure comprises a ferroelectric semiconductor layer and a semi-metal layer, the ferroelectric semiconductor layer being made of a two-dimensional α-In2Se3 material, the semi-metal layer being in Schottky contact with the ferroelectric semiconductor layer, and the semi-metal layer being made of a two-dimensional 1T'-MoTe2 material. The programmable non-volatile ferroelectric Schottky diode fills a technological gap in the application of ferroelectric materials.

The invention relates to a polarization method for obtaining a single-domain ferroelectric semiconductor single crystal, which comprises the following steps: S100: providing a raw material to be polarized, the Curie temperature of the raw material being Tc, and the growth temperature of the raw material being Tg; s200, the temperature of the raw material is increased to a first preset temperature T1, T1 is larger than Tc and smaller than Tg, the raw material is subjected to heat preservation for a first preset duration S1 at the first preset temperature T1, and all the positions of the raw material are evenly heated; and S300, after heat preservation in the step S200 is finished, the temperature of the raw material is reduced to the room temperature, meanwhile, illumination is introduced in the whole cooling process, the illumination intensity is located in a first preset range, and the single domain ferroelectric semiconductor single crystal is obtained after illumination is finished.

The application discloses a ferroelectric semiconductor junction field effect transistor, a preparation method and application, the transistor can utilize physical characteristics of itself to realize simultaneously optical sensor, storage, synapse, logic in a single device, and the structure comprises source and drain, control gate, channel layer, ferroelectric gate layer, oxide layer and substrate from top to bottom.The channel layer adopts two-dimensional transition metal sulfide semiconductor material, the ferroelectric gate layer adopts two-dimensional ferroelectric semiconductor material, the source and the drain are respectively located at two layers of two-dimensional semiconductor channel, and the control gate is just above the ferroelectric gate layer.The preparation method and application of the ferroelectric semiconductor junction field effect transistor provided by the application can integrate optical signal sensing, data storage, synapse calculation and self-switching logic function in a single transistor, break through the functional division limitation of traditional devices, provide a new path for high-density integrated reconfigurable electronic devices, and effectively balance structural complexity and function density.

The invention provides a light-operated ferroelectric semiconductor field transistor and a preparation method thereof. A gate-free device comprises a light-induced deformation substrate, a dielectric layer formed on the substrate, a ferroelectric semiconductor layer located on the dielectric layer and source and drain electrodes arranged on the ferroelectric layer. According to the back gate device, a first dielectric layer, a back gate electrode, a second dielectric layer, a ferroelectric semiconductor layer located on the second dielectric layer and source and drain electrodes arranged on the ferroelectric layer are sequentially formed on the photoinduced deformation substrate. The photoinduced deformation substrate serves as a regulation and control unit, the photothermal effect caused by direct irradiation of a semiconductor material in traditional light regulation and control is avoided, the problem of carrier mobility attenuation is solved, meanwhile, the device has the capacity of responding to multi-wavelength non-contact light regulation and control, and the working accuracy and stability of the device are improved.

The invention discloses a double-ferroelectric enhanced ferroelectric field effect transistor and a preparation method and application thereof, and belongs to the technical field of inorganic semiconductor nanomaterials. According to the invention, a ferroelectric field effect transistor electronic device based on strontium ruthenate / bismuth ferrite / hafnium oxide / diindium triselenide is prepared, wherein strontium ruthenate is used as a grid electrode, bismuth ferrite is used as a ferroelectric dielectric layer, hafnium oxide is used as a buffer layer, diindium triselenide is used as a ferroelectric semiconductor channel, and chromium and gold are used as source and drain electrode materials. The dual-ferroelectric field effect transistor prepared by the invention mainly aims to enhance the ferroelectric retention performance of the ferroelectric field effect transistor by utilizing the mutual coupling effect between ferroelectric polarization of the channel material diindium triselenide and ferroelectric polarization of the dielectric material bismuth ferrite and improve the nonvolatile storage capacity. Compared with a single ferroelectric field effect crystal, the double ferroelectric field effect transistor prepared by the invention can have longer ferroelectric retention time.

NON-VOLATILE TRANSISTOR, ASSEMBLY OF NON-VOLATILE TRANSISTORS AND MATRIX OF NON-VOLATILE TRANSISTORS The invention relates to a non-volatile transistor (10) comprising a ferroelectric semiconductor layer (11) comprising a ferroelectric domain (12) exhibiting a spontaneous electrical bias (13) capable of taking a plurality of distinct states, a source (14), a gate (15) and a drain (16).The source (14), gate (15), and drain (16) are spaced apart and arranged such that an electrical potential applied between the source (14) and the gate (15) applies an electric field to the ferroelectric domain (12). The drain (16) is in electrical contact with the ferroelectric layer (11). The source (14) forms, with the ferroelectric layer (11), a Schottky barrier (17) at an interface between the source (14) and the ferroelectric layer (11). This barrier has an electrical resistance that is a function of the electrical bias (13). The transistor is such that the ferroelectric semiconductor layer (11) is degenerate at the interface between the source (14) and the ferroelectric layer (11), and the ferroelectric semiconductor layer (11) has an electrical conductivity independent of the spontaneous bias (13). Figure to be published with the abbreviation: Figure 1.

A two-dimensional semiconductor ferroelectric gate transistor structure photodetector based on oxygen plasma treatment belongs to the field of photoelectric detection technology. Using silicon / silicon dioxide as a substrate, the two-dimensional ferroelectric semiconductor material α-In₂Se₃ is placed on the silicon dioxide. An interfacial insulating dielectric layer is formed on the surface of the α-In₂Se₃ material after oxygen plasma treatment. A two-dimensional transition metal chalcogenide is prepared on the insulating dielectric layer using a mechanical exfoliation method. Metal electrodes are bonded to the two-dimensional ferroelectric semiconductor material and the two-dimensional transition metal chalcogenide through electrode adhesion layers. Under the action of the two-dimensional ferroelectric gate, the device exhibits photoelectric detection performance with low dark current and high responsivity. The device also has a certain optical memory function, making it suitable for multifunctional devices integrating detection and memory. The gate dielectric layer preparation method of this invention is simple, suitable for large-scale preparation, and low in cost. It can be applied to the fields of photoelectric detection technology and artificial vision bionics.

This invention discloses a reaction device and method for converting carbon dioxide from flue gas based on ferroelectric photocatalysis. This device addresses the high cost of capturing and separating pure carbon dioxide from flue gas, as well as the low utilization rate of existing photocatalytic carbon dioxide reduction technologies. It proposes an in-situ conversion of carbon dioxide from flue gas into high-value-added energy products, achieving a carbon cycle. The device includes a flue gas flow control system, a humidity control system, a wind speed and frequency control system, a catalytic reaction system, and a product collection and analysis system. Based on photocatalytic conversion technology, the invention utilizes ferroelectric semiconductor materials and integrates them with flue gas from high-energy-consuming industries, effectively and cost-effectively converting carbon dioxide from flue gas into high-value-added fuels.

The invention discloses a surface acoustic wave filter based on a periodic ferroelectric domain and an implementation method thereof. A ferroelectric domain polarizer is adopted to enable a ferroelectric semiconductor film to be subjected to polarization overturning, a plurality of concentric annular narrow ferroelectric domains which are alternately arranged in ferroelectric polarization directions are formed on the ferroelectric semiconductor film below the position between every two adjacent polarized electrodes, and a periodic ferroelectric domain film is obtained; a sheet-shaped filter input electrode is formed on the periodic ferroelectric domain film, and when the same-phase voltage is received, ferroelectric domains with opposite ferroelectric polarization directions automatically generate oscillation with opposite directions to form surface acoustic wave standing waves; the working frequency of the filter is determined by the width of the narrow ferroelectric domain, the width of the narrow ferroelectric domain is modulated by the voltage and frequency of the applied amplitude modulation alternating current, and the narrow ferroelectric domain with small width is easy to prepare, so that the working frequency of the filter is not limited, and the filter can work at a higher frequency; the method is applied to the fields of radio frequency communication, 6G network transmission, high-precision radar, remote sensing monitoring and the like.

The invention discloses a storage vertical device based on a two-dimensional ferroelectric semiconductor and a preparation method of the storage vertical device. The device sequentially comprises a supporting substrate, a graphene back gate, a ferroelectric medium layer, a graphene floating gate, an insulating dielectric layer, a source electrode, a semiconductor channel and a drain electrode from bottom to top, and the source electrode and the drain electrode are arranged on the upper side and the lower side of the semiconductor channel respectively. The single-layer graphene and the transition metal disulfide are used, so that the performance parameters of the tunneling field effect device are improved, and the carrier tunneling mechanisms of different regions are explored; and a two-dimensional ferroelectric material CuInP2S6 is used, so that the storage characteristic of long retention memory is realized.

A photoelectric conversion element (10) according to one embodiment of the present disclosure has a photoelectric conversion unit (1), wherein: the photoelectric conversion unit (1) has a light-receiving surface (1a); the photoelectric conversion unit (1) contains a ferroelectric semiconductor material; the ferroelectric semiconductor material is polarized in an in-plane direction of the light-receiving surface (1a), thereby breaking the spatial inversion symmetry of the photoelectric conversion unit (1); the ferroelectric semiconductor material contains one or both of a halogenated metal perovskite semiconductor material and a haolgenated perovskite semiconductor material containing formamidinium ions; and radiation light radiated onto the light-receiving surface (1a) is photoelectrically converted, thereby generating a photocurrent that flows in the polarization direction of the ferroelectric semiconductor material.

Described herein is a method of fabricating a ferroelectric material, comprising the steps of: providing a semiconductor substrate; treating the semiconductor substrate with an oxidant to form an oxidized surface; depositing a metal on top of the oxidized surface to provide a film; and annealing the film at a temperature between 700°C and 900°C, thereby forming a metal oxide layer on top of the semiconductor substrate, wherein the interface between the semiconductor substrate and the metal oxide layer does not contain any remnant oxidized surface, and a ferroelectric material and a ferroelectric transistor or capacitor comprising said ferroelectric material.

A ferroelectric semiconductor device and method are described herein. The method includes performing a diffusion anneal process to drive elements of a dopant film through an amorphous silicon layer and into a gate dielectric layer over a fin to form a doped gate dielectric layer with a gradient depth profile of dopant concentrations. The doped gate dielectric layer is crystallized during a post-cap anneal process to form a gradient depth profile of ferroelectric properties within the crystallized gate dielectric layer. A metal gate electrode is formed over the crystallized gate dielectric layer to obtain a ferroelectric transistor with multi-ferroelectric properties between the gate electrode and the channel. The ferroelectric transistor may be used in deep neural network (DNN) applications.

The invention relates to a two-dimensional JFET device and a manufacturing method thereof. The two-dimensional JFET device comprises: an insulating substrate; the few-layer two-dimensional ferroelectric semiconductor film is located on the surface of the insulating substrate; the two-dimensional semi-metal thin film is located in the middle area of the surface of the few-layer two-dimensional ferroelectric semiconductor thin film; the metal electrodes are divided into a source electrode, a drain electrode and a gate electrode, the source electrode and the drain electrode are located on the surfaces of the few-layer two-dimensional ferroelectric semiconductor films on the two sides of the two-dimensional semimetal film respectively, and the gate electrode is located on the surface of the two-dimensional semimetal film. According to the two-dimensional JFET device, the high conductivity of the two-dimensional semimetal and the spontaneous polarization, adjustable and controllable characteristics, low work function, no dangling bond and other characteristics of the two-dimensional ferroelectric semiconductor material are utilized, the Schottky barrier height of a junction region and the working voltage range of the device are reduced, the voltage drop sharing phenomenon is avoided, and the device reliability is improved. And nearly ideal sub-threshold swing and accurate control on channel conductivity are realized.

The application discloses a high-durability FeFET based on a ferroelectric semiconductor channel and an antiferromagnetic gate dielectric and a preparation method thereof. A back gate electrode layer, an antiferromagnetic gate dielectric layer, a ferroelectric semiconductor channel layer, a top gate high-k gate dielectric layer and a top gate electrode layer are sequentially stacked in the FeFET structure. The antiferromagnetic gate dielectric layer serves as a back gate dielectric layer, and the top gate high-k gate dielectric layer serves as a top gate dielectric layer. The thickness of the back gate dielectric layer is greater than that of the top gate dielectric layer, and an asymmetric double-gate structure is formed. In the application, a hafnium oxide-based antiferromagnetic film is used to replace a ferroelectric film as a gate dielectric of the FeFET, so that the operating voltage is effectively reduced. There is no interface layer between the ferroelectric semiconductor channel and the antiferromagnetic gate dielectric, and the durability failure caused by the charge trapping and defect generation associated with the interface layer of the traditional FeFET is inhibited. The out-of-plane spontaneous polarization of the ferroelectric semiconductor channel is continuously and accurately adjustable, and the FeFET has a gate storage mode and a channel storage mode which are switched with each other based on the asymmetric double-gate structure of the FeFET, so that the FeFET is expected to exhibit higher durability.

The application relates to a two-dimensional JFET device and a manufacturing method thereof. The two-dimensional JFET device comprises an insulating substrate, a few-layer two-dimensional ferroelectric semiconductor thin film located on the surface of the insulating substrate, a two-dimensional semimetal thin film located on the middle region of the surface of the few-layer two-dimensional ferroelectric semiconductor thin film, and a metal electrode, which is divided into a source electrode, a drain electrode and a gate electrode. The source electrode and the drain electrode are respectively located on the surface of the few-layer two-dimensional ferroelectric semiconductor thin film on the two sides of the two-dimensional semimetal thin film, and the gate electrode is located on the surface of the two-dimensional semimetal thin film. The two-dimensional JFET device utilizes the high conductivity of the two-dimensional semimetal, the spontaneous polarization, the adjustable control characteristics, the low work function and the absence of dangling bonds of the two-dimensional ferroelectric semiconductor material, reduces the Schottky barrier height of the junction region and the working voltage range of the device, avoids the sharing pressure drop phenomenon, and realizes the nearly ideal sub-threshold swing and the accurate control of the channel conductance.

Proposed is a high-performance photoactive neuromorphic synaptic device using a two-dimensional ferroelectric semiconductor with an asymmetric energy band structure, the synaptic device including a gate electrode layer, a buffer insulating layer arranged on the gate electrode layer, a channel layer arranged on the buffer insulating layer, a source electrode of a conductor arranged on the channel layer, and a drain electrode of a conductor arranged on the channel layer, and spaced apart from the source electrode, wherein the channel layer is made of the two-dimensional ferroelectric semiconductor, the buffer insulating layer is made of an insulating material having a lower dielectric constant than that of the channel layer, the gate electrode layer is configured to control an electric field of the channel layer by an applied electrical bias, and the photoactive neuromorphic synaptic device increases a Fermi level as increased electron-hole pairs.