50 results about "Ferroelectric semiconductors" patented technology

The invention discloses a ferroelectric semiconductor junction field effect transistor, a preparation method and application. The transistor can simultaneously realize optical sensor, storage, synapse and logic in a single device by utilizing the physical characteristics of the transistor. The structure comprises a source electrode, a drain electrode, a control grid electrode, a channel layer, a ferroelectric grid layer, an oxide layer and a substrate from top to bottom. The channel layer is made of a two-dimensional transition metal sulfide semiconductor material, the ferroelectric gate layer is made of a two-dimensional ferroelectric semiconductor material, the source electrode and the drain electrode are located on two layers of the two-dimensional semiconductor channel respectively, and the control gate is located over the ferroelectric gate layer. According to the preparation method and application of the ferroelectric semiconductor junction field effect transistor, the logic functions of optical signal sensing, data storage, synaptic calculation and self-switching can be integrated in a single transistor, the function discrete limitation of a traditional device is broken through, a new path is provided for a high-density integrated reconfigurable electronic device, and the field effect transistor is suitable for large-scale popularization and application. And the structure complexity and the function density are effectively balanced.

The invention discloses an audio-visual fusion nerve component and an audio-visual fusion target detection method, and belongs to the technical field of intelligent identification. The audio-visual fusion nerve component is a photoelectric detector which takes a ferroelectric semiconductor bismuth-oxygen-selenium as a channel layer and is of a back gate structure, visual information is irradiated to a channel in the form of optical power, and a photoconductive effect is generated; auditory information is converted into a voltage signal to be transmitted to the gate electrode to trigger ferroelectric polarization of the channel, channel conductance is effectively regulated and controlled in the polarization direction, photon-generated carrier generation and transmission behaviors of the channel are further regulated and controlled, and therefore nonlinear audio-visual fusion is achieved. Based on the hyper-additive property, the anti-effectiveness and the space-time fusion principle of the audio-visual fusion, reliability-enhanced audio-visual fusion target identification can be effectively carried out, especially detection of continuous fuzzy targets, including but not limited to vehicle orientation detection and vehicle type identification.

The photoelectric regulation and control polymorphic nonvolatile memory based on the Van der Waals ferroelectric semiconductor sequentially comprises an insulating substrate, a bottom metal electrode, a ferroelectric gate medium, an insulating layer h-BN, a conducting channel layer, a source metal electrode and a drain metal electrode from bottom to top, and the source metal electrode and the drain metal electrode are connected with the two ends of the conducting channel layer respectively. The ferroelectric gate dielectric layer is made of a two-dimensional Van der Waals ferroelectric semiconductor material In2Se3, and the conductive channel layer is made of a two-dimensional Van der Waals ferroelectric semiconductor material InSe. According to the invention, a resistance state modulation window is formed based on grid voltage and source-drain voltage polarization, and charge injection and extraction from a channel are controlled in a combined manner. The prepared device stores multi-state information through two saturated polarizations, and realizes more storage states by means of regulation and control of positive and negative domain ratios.

The invention discloses a high-durability FeFET based on a ferroelectric semiconductor channel and an anti-ferroelectric gate dielectric and a preparation method of the high-durability FeFET. A back gate electrode layer, an anti-ferroelectric gate dielectric layer, a ferroelectric semiconductor channel layer, a top gate high-k gate dielectric layer and a top gate electrode layer are sequentially stacked in a FeFET structure, and the anti-ferroelectric gate dielectric layer serves as a back gate dielectric layer; the top gate high-k gate dielectric layer serves as a top gate dielectric layer, the thickness of the back gate dielectric layer is larger than that of the top gate dielectric layer, and an asymmetric double-gate structure is formed. According to the invention, the hafnium oxide-based anti-ferroelectric thin film is used for replacing a ferroelectric thin film as a gate medium of the FeFET, so that the operation voltage is effectively reduced; no interface layer is arranged between the ferroelectric semiconductor channel and the anti-ferroelectric gate dielectric, so that durability failure caused by charge trapping and defect generation associated with the traditional FeFET and the interface layer is inhibited; the out-of-plane spontaneous polarization continuous, precise and adjustable characteristic of a ferroelectric semiconductor channel and the gate storage mode and the channel storage mode which are switched mutually based on the asymmetric double-gate structure of the FeFET are hopeful to enable the FeFET to show higher durability.

The invention discloses a self-rectification ferroelectric memristor based on ferroelectric surface external polarization and a preparation method thereof. The memristor is of a vertical structure comprising an upper electrode layer, a ferroelectric layer and a semiconductor layer from top to bottom, the ferroelectric layer is a ferroelectric semiconductor with out-of-plane ferroelectric polarization; the out-of-plane polarization direction of the ferroelectric layer is perpendicular to the upper electrode layer / ferroelectric layer interface and the ferroelectric layer / semiconductor layer interface at the same time, the two contact surfaces form an asymmetric barrier, and the out-of-plane polarization state of the ferroelectric layer can be changed through external voltage, so that the barrier height of the two contact surfaces is changed, meanwhile, the carrier transport characteristic of the semiconductor layer is changed, and the performance of the device is improved. And therefore, a function of regulating and controlling the conductivity state of the memristor is achieved. The conduction current of the memristor is measured through a peripheral circuit and is used as a storage value. High-resistance and low-resistance switching and rectification characteristics are realized by utilizing the change of the contact potential barrier of the ferroelectric layer and the silicon interface in the polarization overturning process. The memristor is simple in structure, easy to integrate and low in power consumption.

The invention relates to the field of semiconductor materials, in particular to a novel nonvolatile organic ferroelectric semiconductor storage material. In view of limitation of a traditional storage technology and existing problems of an organic ferroelectric material, the molecular structure of the material is innovatively designed, and synthesis, doping and film forming processes are optimized. The obtained material is high in polarization performance, high in stability, efficient in preparation and stable in quality, is successfully applied to the fields of flexible storage and Internet of Things storage, also has the advantages of low temperature, self-repairing and miniaturization, and powerfully promotes the innovation of a storage technology.

Disclosed are a ferroelectric semiconductor thin film, a method of forming the ferroelectric semiconductor thin film, a transistor, a memory device and an integrated circuit. The method of forming the ferroelectric semiconductor thin film includes preparing a precursor solution including an indium precursor and a selenium precursor, and performing spray pyrolysis of the precursor solution on a substrate to obtain the ferroelectric semiconductor thin film including a polycrystalline γ-In2Se3 layer.

The invention relates to a programmable non-volatile ferroelectric Schottky diode and a manufacturing method thereof. The programmable non-volatile ferroelectric Schottky diode comprises a control structure which comprises an insulating layer and a conductive layer; the diode structure is located on the side, opposite to the conducting layer, of the insulating layer, the diode structure comprises a ferroelectric semiconductor layer and a semimetal layer, the material of the ferroelectric semiconductor layer comprises two-dimensional alpha-In2Se3, the semimetal layer is in Schottky contact with the ferroelectric semiconductor layer, and the material of the semimetal layer comprises two-dimensional 1T '-MoTe2. The programmable non-volatile ferroelectric Schottky diode fills the technical blank of application of ferroelectric materials.

Described herein is a method of fabricating a ferroelectric material, comprising the steps of: providing a semiconductor substrate; treating the semiconductor substrate with an oxidant to form an oxidized surface; depositing a metal on top of the oxidized surface to provide a film; and annealing the film at a temperature between 700°C and 900°C, thereby forming a metal oxide layer on top of the semiconductor substrate, wherein the interface between the semiconductor substrate and the metal oxide layer does not contain any remnant oxidized surface, and a ferroelectric material and a ferroelectric transistor or capacitor comprising said ferroelectric material.

The application discloses a self-rectifying ferroelectric memristor based on ferroelectric out-of-plane polarization and a preparation method thereof. The memristor is vertically structured from top to bottom as an upper electrode layer, a ferroelectric layer and a semiconductor layer. The ferroelectric layer is a ferroelectric semiconductor with out-of-plane ferroelectric polarization. The out-of-plane polarization direction of the ferroelectric layer is perpendicular to the upper electrode layer / ferroelectric layer interface and the ferroelectric layer / semiconductor layer interface at the same time. Two contact surfaces form an asymmetric potential barrier. The out-of-plane polarization state of the ferroelectric layer is changed by an external voltage, thereby changing the potential barrier height of the two contact surfaces and the carrier transport characteristics of the semiconductor layer, and further achieving the regulation function of the conductive state of the memristor. The on-current of the memristor is measured by a peripheral circuit as a storage value. The application realizes the switching of high resistance and low resistance and the rectification characteristic by using the change of the contact potential barrier of the ferroelectric layer and the silicon interface in the polarization reversal process. The memristor has simple structure, is easy to integrate and has low power consumption.

A method for fabricating an ambient energy converter is described, comprising a plate-shaped support substrate consisting of a first conductor material as the first electrode and a layered structure arranged on this substrate. This structure consists of a layer of ferroelectric material and a layer of a second conductor material, different from the first conductor material, as the second electrode. The two conductor materials have different concentrations of free electrons. The ferroelectric material comprises one or more ferroelectric semiconductors. Ferroelectric semiconductors used as the ferroelectric material are selected from the list of sodium nitrite, semiconductor ceramics based on barium titanate, lithium niobate, potassium niobate, lead titanate, etc.The process comprises the following steps: - providing a plate made of the conductor material intended for the first electrode as a substrate, - subjecting the substrate to at least one surface treatment, - applying the layer of ferroelectric material (BTO layer) to a side of the substrate intended as the front, - masking at least the edges of the BTO layer on the front of the substrate, leaving at least one area within the edges of the BTO layer free, and - applying the conductor material intended for the second electrode to the area left free from masking.

The invention provides a ferroelectric semiconductor floating gate transistor. The ferroelectric semiconductor floating gate transistor sequentially comprises a floating gate layer, a tunneling layer and a channel layer from bottom to top, wherein the channel layer is made of a ferroelectric semiconductor material. The invention also provides a method for preparing the ferroelectric semiconductor floating gate transistor. The ferroelectric semiconductor floating gate transistor provided by the invention can realize multi-valued storage, and has reconfigurable three-terminal and two-terminal operation modes. In addition, the ferroelectric semiconductor floating gate transistor can also realize floating gate adjustable ferroelectric resistance change (FRS) and three-valued logic of optical and electric pulse mixed input, so that the function of the device is further expanded, and the ferroelectric semiconductor floating gate transistor is expected to be applied to memristors and memory logic.

This application discloses a two-dimensional germanium-based perovskite ferroelectric semiconductor material, its preparation method, and its applications, belonging to the field of materials science. The molecular formula of the two-dimensional germanium-based perovskite ferroelectric semiconductor material is [CH3(CH2)]. n The molecule is NH3]2CsGe2I7, where n = 2, 3, or 4. This material possesses excellent physicochemical properties, such as semiconductor characteristics, ferroelectricity, and piezoelectricity. The preparation method of this invention allows for the preparation of this material using a simple solution method at low cost. This material has potential applications in ferroelectric, optoelectronic, and other fields.

The invention belongs to the technical field of photoelectric detectors, discloses a photoelectric detector based on ferroelectric / semiconductor heterojunction and a preparation method thereof, and solves the problems of limited carrier separation efficiency, complex device structure, insufficient interface regulation and control means and the like in the photoelectric detector. The photoelectric detector comprises a substrate, a planar electrode pair arranged on the surface of the substrate, and a two-dimensional heterojunction active layer which covers and is attached to the planar electrode pair and a channel region between the planar electrode pair; wherein the two-dimensional heterojunction active layer is formed by vertically stacking a CuInP2S6 thin film and a GeSe thin film in sequence. By constructing a Van der Waals heterojunction active layer and utilizing a built-in electric field formed on a heterojunction interface by ferroelectric polarization, the generation, separation and transmission processes of photon-generated carriers are effectively regulated and controlled, so that the photoelectric detection performance of the device is improved on the premise of not introducing a complex process.