The invention discloses a heterosynapse electronic device based on a two-dimensional ferroelectric
semiconductor and a preparation method of the heterosynapse electronic device. The heterosynapse electronic device comprises a supporting substrate, a back gate
electrode, a
dielectric layer, a source-drain
electrode and a packaging layer which are sequentially stacked from bottom to top, the source and drain
electrode comprises a source electrode and a drain electrode, a
conducting channel is arranged between the source electrode and the drain electrode, and the
conducting channel is made of a III2-VI3 type two-dimensional ferroelectric
semiconductor material; the source electrode and the drain electrode are respectively connected with two ends of the
conducting channel and form Schottky contact with a Van der Waals interface; and the preparation method comprises the steps of preparing the packaging layer h-BN and the
graphene electrode, preparing a PVA dry-method transfer film, performing dry-method transfer on the
graphene electrode, preparing the
graphene source and drain electrode and preparing the
metal extraction electrode. The invention provides a memristive
transistor which takes a III2-VI3 two-dimensional ferroelectric
semiconductor material as a conducting channel, and realizes a heterosynaptic electronic device for regulating and controlling
synaptic weight by inputting from two ends of a source electrode, a drain electrode and a grid electrode.