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All-ferroelectric semiconductor PN junction thin film device and preparation method thereof

A thin-film device, PN junction technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as destructive reading of data, and achieve the effect of reliable theoretical value

Pending Publication Date: 2022-01-28
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The all-ferroelectric semiconductor PN junction thin-film device of the present invention may be used to solve the problem of destructive reading of data in existing ferroelectric memories, and at the same time realize more excellent non-destructive reading of electrical and optical polarization states of ferroelectrics

Method used

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  • All-ferroelectric semiconductor PN junction thin film device and preparation method thereof
  • All-ferroelectric semiconductor PN junction thin film device and preparation method thereof
  • All-ferroelectric semiconductor PN junction thin film device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] (1) BiFeO 3 Target and BiFe 0.9 Zn 0.1 o 3 Target preparation:

[0060] Will 99.9% Bi 2 o 3 and 99.9% Fe 2 o 3 Weigh the total mass of 15g powder according to the molar ratio of 1.3:1, pre-sinter at 630°C for 2 hours after fully mixing, grind to powder after cooling down to room temperature, then pre-sinter at 730°C for 2 hours, and grind to powder after cooling down to room temperature shape. Then, the ground powder was pressed into tablets and calcined at 830° C. for 40 min to obtain a BFO target. The surface of the calcined target was smoothed with sandpaper, rinsed with alcohol and dried for later use.

[0061] Will 99.9% Bi 2 o 3 , 99.9% Fe 2 o 3 And 99.9% ZnO with a molar ratio of 1.3:0.9:0.1. Weigh the total mass as 15g powder, mix well and pre-sinter at 630°C for 2h, then grind to powder after cooling down to room temperature, and then pre-sinter at 730°C for 2h again, After cooling down to room temperature, grind to powder. Then, the ground powde...

Embodiment 2

[0071] (1) BiFeO 3 Target and BiFe 0.9 Zn 0.1 o 3 Target material preparation: same as Example 1.

[0072] (2) Cleaning treatment of the substrate: the same as in Embodiment 1.

[0073] (3) Preparation of bottom electrode: Same as Example 1.

[0074] (4) Preparation of ferroelectric BFO / BFZO bilayer film:

[0075] Keep the temperature and oxygen pressure in step (3) constant, continue to use the pulsed laser deposition method to make the high-energy pulsed laser bombard the BFZO target and the BFO target in sequence, and deposit 100nm BFZO film and 100nm BFO film on the bottom electrode in turn to form a double layer ferroelectric film.

[0076] (5) Preparation of top electrode: Same as Example 1.

[0077] The performance of the ferroelectric diode of the all-ferroelectric semiconductor PN junction thin film device prepared in this example is opposite to that of Example 1.

Embodiment 3

[0079] (1) BiFeO 3 Target and BiFe 0.9 Zn 0.1 o 3 Target preparation:

[0080] Will 99.9% Bi 2 o 3 and 99.9% Fe 2 o 3 Weigh the total mass of 15g powder at a molar ratio of 1.3:1, pre-sinter at 600°C for 5 hours after mixing thoroughly, grind to powder after cooling down to room temperature, then pre-sinter at 750°C for 2 hours, and grind to powder after cooling down to room temperature shape. Then, the ground powder was pressed into tablets and calcined at 820° C. for 60 min to obtain a BFO target. The surface of the calcined target was smoothed with sandpaper, rinsed with alcohol and dried for later use.

[0081] Will 99.9% Bi 2 o 3 , 99.9% Fe 2 o 3 And 99.9% ZnO with a molar ratio of 1.3:0.9:0.1. Weigh the total mass as 15g powder, mix well and pre-sinter at 650°C for 3h, then grind to powder after cooling down to room temperature, and then pre-sinter at 700°C for 5h again, After cooling down to room temperature, grind to powder. Then, the ground powder was pre...

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Abstract

An all-ferroelectric semiconductor PN junction thin film device comprises a substrate, a bottom electrode, an N-type ferroelectric layer, a P-type ferroelectric layer and a top electrode in sequence from bottom to top, or comprises the substrate, the bottom electrode, the P-type ferroelectric layer, the N-type ferroelectric layer and the top electrode. Wherein the N-type ferroelectric layer is made of an N-type ferroelectric material, and the P-type ferroelectric layer is made of a P-type ferroelectric material. The invention further provides a preparation method of the all-ferroelectric semiconductor PN junction thin film device. The all-ferroelectric semiconductor PN junction thin film device can be used for solving the problem of destructive reading of data in an existing ferroelectric memory, and meanwhile more excellent non-destructive reading of electricity and light on the ferroelectric polarization state is achieved.

Description

technical field [0001] The invention belongs to the field of ferroelectric semiconductor technology. Specifically, the present invention relates to an all-ferroelectric semiconductor PN junction thin film device and a preparation method thereof. Background technique [0002] With the advent of the era of big data, the processing and storage of massive data has higher and higher requirements for memory, especially higher requirements for memory capacity, power consumption, and read and write speed. Ferroelectric materials are a class of materials that have the characteristics of spontaneous polarization and the orientation of the spontaneous polarization can be changed under the action of an external electric field. Different polarization states correspond to a stable state, and the stable states can be converted to each other to realize data storage. Based on the property that ferroelectric polarization can be reversed under the action of an electric field, ferroelectric m...

Claims

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Application Information

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IPC IPC(8): H01L31/072H01L31/0336H01L31/18
CPCH01L31/072H01L31/18H01L31/0336Y02E10/50Y02P70/50
Inventor 周勇王灿姚小康何萌葛琛郭尔佳金奎娟
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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