59 results about "Residual polarization" patented technology

The invention belongs to the field of microelectronics, and particularly relates to a ferroelectric capacitor, a preparation method thereof and a three-dimensional ferroelectric memory array, and the ferroelectric capacitor comprises a substrate, a bottom electrode, a ferroelectric dielectric layer, a deoxidizing layer and a top electrode which are sequentially arranged from bottom to top; the ferroelectric medium layer is an Hf < 1-x > Zr < x > O < 2 > layer, 0 lt; xlt; the Hf-rich composition is realized by controlling the Hf: Zr super-cycle ratio of atomic layer deposition; the thickness of the ferroelectric medium layer is 1-6 nm, and the thickness of the bottom electrode is 0.1-5 nm. Compared with the prior art, the problems of polarization characteristic degradation caused by thinning of the ferroelectric layer in the hafnium-based ferroelectric capacitor and crosstalk in the FeRAM in the prior art are solved. According to the scheme, the oxygen vacancy concentration is accurately adjusted to inhibit the formation of a non-ferroelectric phase, so that the ultra-thin ferroelectric film can still maintain relatively high remanent polarization while the size is reduced, a storage window is effectively improved, and the wake-up requirement is reduced.

The invention discloses a method for realizing PUF (Physical Unclonable Function) by using homomorphic write-in of an FRAM (Frequency Random Access Memory) of a 2T2C structure, which comprises the following steps of: firstly, carrying out independent write-in operation on two ferroelectric capacitors and writing same data, and carrying out homomorphic storage; then, the two ferroelectric capacitors are recovered to different residual polarization states by using the manufacturing difference of the ferroelectric capacitors; then applying a reverse level to enable the two ferroelectric capacitors to reach a saturated polarization state from a residual polarization state; and finally, comparing a difference value delta I of the polarization current responses of the two ferroelectric capacitors, and outputting a corresponding binary numerical value according to the difference value delta I and a set judgment condition, thereby generating a random PUF response. According to the invention, the PUF response with high randomness and uniqueness is generated through homomorphic storage of the 2T2C FRAM and by using the polarization characteristic of the ferroelectric material.

This invention relates to the field of dielectric energy storage ceramics technology, specifically to a high-efficiency BiFeO3-BaTiO3-based relaxor energy storage ceramic, its preparation method, and its applications. The chemical composition of this material is 0.4Bi. 0.9 (Sm 0.5 Gd 0.5 ) 0.1 FeO3-(0.6-x)Sr 0.4 Ba 0.6 TiO3-xSr(Sn) 1 / 3 Zr 1 / 3 Hf 1 / 3 O3-y(40Bi2O3-40B2O3-20ZnO), abbreviated as BF-SBT-xS(SZH)-yBBZ, where x=0,0.05,0.08,0.10, and y takes values ​​of 0,3wt%), utilizes the synergistic refinement of polarization domains by multiple ions at the A and B sites and the reduction of remanent polarization (P r The value of Sr is used to improve energy storage efficiency (η). 2+ Ba 2+ Adjusting Curie temperature, dielectric constant, and temperature stability; introducing Sn 4+ Zr 4+ Hf 4+ This disrupts the localized structure at the B site, leading to relaxor ferroelectricity. Ultimately, compared to the matrix BiFeO3-BaTiO3, it significantly increases the breakdown field strength (E). b ), significantly increasing energy storage density (W). rec This reduces ferroelectric hysteresis and improves charging and discharging efficiency.

The application discloses a kind of Bi 3+ And Y 3+ Co-doped AgNbO3 antiferroelectric energy storage ceramic material and preparation method and application thereof, the chemical formula of the energy storage ceramic material is Ag 1‑3x Bi x Nb 1‑3x / 5 Y x O3, wherein 0 3+ And Y 3+ Co-doped AgNbO3 antiferroelectric energy storage ceramic material is in A / B site.The application also specifically discloses preparation method of the Bi 3+ And Y 3+ Co-doped AgNbO3 antiferroelectric energy storage ceramic material and application thereof in preparation of ceramic capacitor.The application prepares AgNbO3-based antiferroelectric energy storage ceramic material with pbcm space group perovskite structure by simple, easy-to-implement technical process, improves its breakdown field strength (E b ) While also reducing the remanent polarization value (P r ), and can effectively improve energy storage density and the stability of antiferroelectric phase at room temperature.

The application relates to the technical field of ferroelectric materials, and discloses a resilient ferroelectric body as well as a preparation method and application thereof. The resilient ferroelectric body comprises a ferroelectric material and a crosslinking agent; the mass ratio of the ferroelectric body to the crosslinking agent is 3-50:1; and the crosslinking density of the resilient ferroelectric body is 0.01-20%. The preparation method comprises the following steps: dissolving and mixing the ferroelectric material and the crosslinking agent, and then performing covalent crosslinking to obtain the resilient ferroelectric body. In the application, a trace amount of crosslinking agent is mixed with the ferroelectric material to obtain a ferroelectric body with a network structure and reversible inversion of ferroelectric domains; finally, the obtained ferroelectric body has excellent resilience and flexibility, higher residual polarization strength, higher thermal stability, shorter switching time, and excellent comprehensive performance.

The invention provides a high-resolution broadband integrated spectrometer based on thin film lead zirconate titanate and a preparation method, and relates to the technical field of integrated optics. The structure of the spectrometer comprises a substrate; the silicon dioxide lower cladding layer is arranged on the substrate; the lead zirconate titanate thin film waveguide layer is arranged on the silicon dioxide lower cladding, a plurality of micro-ring resonators and a plurality of array waveguide gratings are arranged in the lead zirconate titanate thin film waveguide layer, and each array waveguide grating is connected with each micro-ring resonator through a waveguide; the sectional periodic metal electrode arrangement system is arranged in each section of straight waveguide area in the micro-ring resonator; wherein the plurality of micro-ring resonators are configured with resonant wavelengths which are distributed in a staggered manner, and the interval between the adjacent resonant wavelengths is 1 / n of the interval between the array waveguide grating channels; the spectrometer is configured to change the local waveguide refractive index by using the residual polarization effect of the lead zirconate titanate thin film through a segmented polarization method so as to realize alignment of the resonant wavelength and the center of the array waveguide grating channel.

The invention provides a neural network training method and device, equipment and a medium, and the method comprises the following steps: 1, obtaining training data of an image, voice or text type, and carrying out the normalization and feature extraction processing; according to the invention, the three-terminal two-dimensional photoelectric synapse device is prepared, a single / double input mode is supported, cooperative regulation and control of an optical pulse sequence and a grid electric signal sequence are realized, the problem that the multi-mode processing capability of a traditional double-terminal device is limited is solved, and the complex feature extraction efficiency is improved; the nonvolatile storage of synaptic weight is realized through the ferroelectric regulation and control layer, and the remanent polarization of the ferroelectric regulation and control layer is Prgt; 5 [mu] C / cm < 2 > and erasing durability gt; 106 cycles are carried out, continuous power supply is not needed, and training power consumption and cost are reduced; through the high carrier mobility (gt, 200cm < 2 > / Vs) and nanosecond-level photoresponse characteristics (carrier lifetime lt, 10ns) of the two-dimensional photosensitive layer (such as MoS2 / WSe2), the response speed of the device is increased to nanosecond level, and the training requirement of a high-speed neural network is met.

This invention discloses a method and apparatus for awakening the polarization of a large-area ferroelectric capacitor at the wafer level. The wafer consists of a bottom electrode, a ferroelectric layer, and a patterned, independent top electrode array stacked sequentially from bottom to top. The bottom electrode is electrically connected to one end of a pulse voltage generator, and the conductive film on the surface of a flexible conductive roller is electrically connected to the other end of the pulse voltage generator. By controlling the horizontal movement of the wafer stage, the flexible conductive roller is driven to roll and contact the surface of the top electrode array; simultaneously, a preset pulse voltage is applied between the bottom electrode and the conductive film using the pulse voltage generator, increasing the ferroelectric remanent polarization intensity of the ferroelectric film covered by the top electrode in the contact area, thus achieving ferroelectric polarization awakening. This invention, after a high-temperature heat treatment at over 200°C, efficiently and over a large area awakens the polarization of the ferroelectric film corresponding to the top electrode array, ensuring high stability and consistency in its ferroelectric remanent polarization intensity.

The application discloses an electrode structure and a polarization method for an ultrathin back gate ferroelectric dielectric layer, which comprises a source electrode, a drain electrode and a gate electrode; a channel is arranged on the upper surface of the ferroelectric dielectric layer, the source electrode and the drain electrode are arranged at two ends of the channel respectively, and the gate electrode is arranged on the lower surface of the ferroelectric dielectric layer; a first polarization pulse input port is arranged between the source electrode and the gate electrode, and a second polarization pulse input port is arranged between the drain electrode and the gate electrode. The application solves the problems that the low breakdown strength is introduced due to the ultrathin thickness of the ferroelectric film, and the polarization electric field cannot be applied to the vertical channel due to the back gate structure, so that the polarization is insufficient, realizes the regulation and control of the polarization performance of the hafnium-based ultrathin ferroelectric film serving as a back gate dielectric layer in a field effect transistor, further improves the reliability and stability of the residual polarization field, and has important significance for constructing a floating gate structure of a field effect device and inhibiting device leakage and power consumption.

The invention discloses a memory cell structure and a preparation method thereof, and a ferroelectric memory. The memory cell structure comprises a selective switch transistor, a nano forest structure, a capacitor structure and a wiring layer, wherein the selective switch transistor is positioned on the substrate; the capacitor structure is located above the selective switch transistor, the capacitor structure covers the surface of the nano forest structure, the capacitor structure comprises a first electrode and a second electrode, and the first electrode is electrically connected with a source electrode of the selective switch transistor; the wiring layer is located above the capacitor structure, the wiring layer comprises a bit line and a plate line, the plate line is electrically connected with the second electrode of the capacitor structure, and the bit line is electrically connected with the drain electrode of the selective switch transistor. The surface area of the ferroelectric material on the unit device area is increased, so that the residual polarization is improved, the storage window of the ferroelectric memory is increased, and the performance of the ferroelectric memory is improved.

The invention provides a ferroelectric memory and a preparation method thereof. The preparation method comprises the following steps: S1, depositing a bottom electrode layer on a substrate through an ion beam sputtering process; s2, depositing a ferroelectric layer through a magnetron sputtering process; in the ferroelectric layer deposition process, the oxygen content in the deposition atmosphere is adjusted by controlling the oxygen introduction amount, and then the concentration of oxygen vacancies in the ferroelectric layer is adjusted and controlled; s3, carrying out photoetching on the device; s4, depositing a top electrode layer through an ion beam sputtering process, and removing redundant photoresist and redundant metal to obtain a ferroelectric memory; between the S1 and the S2 or between the S2 and the S3, the method also comprises the following steps: depositing an oxide as an interface intercalation through an atomic layer deposition process. According to the invention, the problems of unstable interface and obvious wake-up effect caused by a large number of oxygen vacancies generated by the reaction of the electrode and the ferroelectric layer in the traditional ferroelectric memory structure are effectively solved, and the preparation of the high-performance ferroelectric memory with high residual polarization and high reliability is realized.

The application relates to a multilevel storage ferroelectric memory based on AlScN film and a preparation method thereof, which comprises a lower electrode (1), an Al 1‑x Sc x N film layer (2), an Al 1‑y Sc y N film layer (3) and an upper electrode (4), wherein the Al 1‑x Sc x N film layer (2) is located on the lower electrode (1); the Al 1‑y Sc y N film layer (3) is located on the Al 1‑x Sc x N film layer (2), x is not equal to y, and the diameter of the Al 1‑y Sc y N film layer (3) is smaller than that of the Al 1‑ x Sc x N film layer (2); the upper electrode (4) is located on the Al 1‑x Sc x N film layer (2) and the Al 1‑y Sc y N film layer (3). The ferroelectric memory adopts Al 1‑x Sc x N film layers and Al 1‑y Sc y N film layers to form double-layer films, the components of the two-layer films are ensured to be different by controlling the content of Sc elements, that is, x and y, so that the second layer Al 1‑y Sc y N film changes the remanent polarization intensity of the first layer Al 1‑ x Sc x N film, and realizes the intermediate state of multilevel storage.

The invention relates to an intelligent metasurface design and detection method for an optical part, and the method comprises the steps: generating a superposed signal containing a high-frequency detection signal sequence and a low-frequency driving signal sequence, and loading the superposed signal to a liquid crystal metasurface unit; a feedback current signal generated by the liquid crystal metasurface unit is collected in real time, and a capacitive reactive current component having a phase difference with the high-frequency detection signal sequence is separated from the feedback current signal; determining an actual optical phase according to the signal change trend of the low-frequency driving signal sequence and the capacitive reactive current component or a preset step-down mapping logic; extracting a direct-current bias component in the feedback current signal, performing time domain accumulation calculation on the direct-current bias component to determine the ion migration degree in the liquid crystal, and generating a compensation bias voltage for offsetting an internal residual polarization field according to the ion migration degree; and dynamically adjusting the amplitude of the low-frequency driving signal sequence according to the deviation value of the actual optical phase and the target phase in combination with the compensation bias voltage.

This application discloses a method, apparatus, medium, and product for recovering fatigue effects of hafnium-based ferroelectric capacitors, relating to the fields of semiconductor devices and integrated circuit technology. The method includes: determining a hybrid recovery pulse sequence; obtaining the initial polarization intensity of the target hafnium-based ferroelectric memory; after performing read / write operations on the target hafnium-based ferroelectric memory, obtaining the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as a first residual polarization intensity; determining whether the target hafnium-based ferroelectric memory is in a fatigue state based on the first residual polarization intensity and the initial polarization intensity; and when the target hafnium-based ferroelectric memory is in a fatigue state, applying a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory. This application utilizes a hybrid recovery pulse sequence to recover fatigue effects of hafnium-based ferroelectric capacitors, which can improve the polarization intensity recovery effect and the durability of the hafnium-based ferroelectric memory.

The application provides a hafnium-based ferroelectric memristor, a preparation method and application thereof. The application relates to the application fields of ferroelectric memristors, neural networks and the like in microelectronic and thin film material science, and innovatively epitaxially grows a Y:HfO2 thin film on a single crystal 0.5%Nb:SrTiO3 (NSTO)<111> substrate. Yttrium doping can adjust the crystal phase structure of the hafnium oxide thin film, significantly increase the ferroelectricity of the thin film, reduce the leakage current, effectively improve the residual polarization intensity and stability of the device, and realize low power consumption, high durability, high ferroelectricity and stability. The application also designs a peripheral circuit based on the multi-resistance state stability characteristics of the HYO ferroelectric memristor to perform multiplication and addition reading operation on the memristor array, and innovatively designs a neural morphological computing system based on the HYO ferroelectric memristor, and applies the memristor neural network to the tracking work of an intelligent vehicle.

The embodiment of the invention relates to a nonvolatile memory based on a ferroelectric thin film transistor and a preparation method of the nonvolatile memory. The preparation method comprises the step of growing a heterogeneous multi-layer thin film (including a ferroelectric layer) by adopting a plasma enhanced atomic layer deposition (PE-ALD) process. According to the ferroelectric thin film transistor epitaxially grown through the PE-ALD technology, the threshold voltage of the transistor is directly changed through the polarization state of a ferroelectric layer, the residual polarization of the ferroelectric layer maintains the electrical state of the transistor after grid voltage programming and erasing operation, and therefore nonvolatile storage is achieved. The thermal budget of the PE-ALD process is relatively low, the crystallization quality of the thin film is high, and 3D device integration can be realized.

This invention discloses a ferroelectric thin-film transistor based on a multilayer structure of aluminum scandium nitride, aluminum nitride, and aluminum scandium nitride, and its fabrication method, relating to the fields of semiconductor devices and ferroelectric memories. The ferroelectric thin-film transistor based on the multilayer structure includes a multilayer ferroelectric gate stack structure and a channel layer that cooperates with the multilayer ferroelectric gate stack structure. The multilayer ferroelectric gate stack structure is a symmetrical stacked structure of aluminum scandium nitride / aluminum nitride / aluminum scandium nitride. This ferroelectric thin-film transistor based on the multilayer structure provides a structural basis for decoupling residual polarization and coercive field and mitigating the negative impact of depolarization field through the hierarchical cooperation of the stacked structure. It is also compatible with the assembly logic of conventional semiconductor devices, reserving structural space for subsequent performance optimization and material replacement.

Embodiments of the present application relate to a ferroelectric thin film transistor based nonvolatile memory and a preparation method thereof. A hetero-multilayer thin film (including a ferroelectric layer) is grown by using a plasma enhanced atomic layer deposition (PE-ALD) process. The ferroelectric thin film transistor grown by using the PE-ALD process has a polarization state of the ferroelectric layer directly changing a threshold voltage of the transistor, and a residual polarization of the ferroelectric layer maintaining an electrical state of the transistor after a gate voltage programming and erasing operation, so as to realize nonvolatile storage. The PE-ALD process has a relatively low heat budget, a high thin film crystallization quality, and can realize 3D device integration.

The invention relates to the technical field of microelectronics, in particular to a low-temperature annealing ferroelectric capacitor device and a preparation method thereof. The low-temperature annealing ferroelectric capacitor device comprises a lower electrode, a lower interface modification layer, a ferroelectric dielectric layer, an upper interface modification layer and an upper electrode which are sequentially deposited on a substrate layer. By growing the interface modification layer on the interface between the ferroelectric dielectric layer and the upper and lower electrodes, the annealing temperature required in the post-annealing stage in the preparation process of the ferroelectric capacitor can be effectively reduced, and the ferroelectric capacitor still has relatively high remanent polarization after annealing, so that the process cost required for large-scale preparation of the ferroelectric capacitor is reduced, and the production efficiency is improved. And the application scene of the ferroelectric memory device is expanded.

The application belongs to the field of ferroelectric material preparation, and specifically provides a preparation method of a samarium-doped hafnium dioxide ferroelectric film with high residual polarization value. First, hafnium salt and samarium salt are used as raw materials to prepare a clear light yellow samarium-doped hafnium dioxide precursor solution, then the precursor is coated on a treated platinum substrate according to experimental requirements, and finally, the Sm-HfO2 ferroelectric film with high residual polarization value is obtained through drying, preheating and annealing treatment. The hafnium oxide-based ferroelectric film prepared by the chemical solution method can realize accurate control of the film thickness, has good film uniformity, is simple to operate, has flexible and controllable doping element content, has simple equipment requirements, is low in cost, is repeatable in process, and is easy to realize industrialized production.

The application discloses a preparation method of a dielectric thin film and a device with super high dielectric constant and / or ferroelectric residual polarization intensity and the device. The method comprises the following steps: step a, forming a dielectric thin film on a substrate or a substrate with a second electrode; the dielectric thin film comprises Hf 1‑x Zr x O2 thin film which is a crystal or amorphous thin film; 0 2 Step b, forming a first electrode on the dielectric thin film; step c, dividing the first electrode into a plurality of discrete microstructures, and the lateral size of each microstructure is 1 nm to 50 microns; step d, annealing treatment, so that the low dielectric constant phase in the dielectric thin film is reduced and the high dielectric constant phase is increased. The dielectric thin film and the device with super high dielectric constant and / or ferroelectric residual polarization intensity provided by the method have the highest dielectric constant and ferroelectric residual polarization intensity which are greater than 921 and 404 muC / cm 2 respectively, high information storage density, can effectively reduce the operating voltage and leakage current of the device, and has good compatibility with the CMOS integrated process, and has good application prospect.

The invention belongs to the technical field of powder preparation by a wet chemical method, and provides a sodium bismuth titanate powder material and a preparation method thereof, the powder material is rhombohedral phase (Bi0. 5Na0. 5) TiO3, the particle morphology of the powder material is a nanocube, and the average size is 76nm. The (Bi0. 5Na0. 5) TiO3 nanocube is prepared through a two-step heating hydrothermal method, has the advantages of being simple in process, low in cost, good in stability and repeatability, capable of being produced on a large scale and the like, and has wide application prospects in the fields of sodium bismuth titanate, sodium bismuth titanate-based ferroelectric ceramics, barium titanate-based thermal sensitive ceramics and the like. The (Bi0. 5Na0. 5) TiO3 nanocube powder prepared by the invention is used as a raw material, (Bi0. 5Na0. 5) TiO3 ceramic sintered at 1100 DEG C for 4 hours has good sinterability and ferroelectricity, the relative density of the (Bi0. 5Na0. 5) TiO3 ceramic is 95% or above, and the maximum polarization intensity, the remanent polarization intensity and the coercive field of the (Bi0. 5Na0. 5) TiO3 ceramic are 40.02 mu C / cm < 2 >, 27.78 mu C / cm < 2 > and 87.5 kV / cm respectively.

The invention discloses a reconfigurable photoelectric logic gate based on a hafnium-based ferroelectric film pyroelectric effect, which comprises a substrate, two devices with the same structure are symmetrically arranged on the left side and the right side of the substrate, each device comprises a top electrode, a middle layer and a bottom electrode which are sequentially arranged from top to bottom, and the middle layer adopts a ferroelectric film; external bias voltage is applied to top electrodes of the two devices, and bottom electrodes of the two devices are grounded; a laser transmitter is arranged above the device; the pyroelectric effect of the ferroelectric film is utilized, and the device controls the polarization direction and the residual polarization intensity of the ferroelectric film by adjusting external bias voltage, so that pyroelectric current response is adjusted, and operation of five logic gates is realized. The ferroelectric polarization direction and the residual polarization intensity are controlled in real time by adjusting the external bias voltage, dynamic logic reconstruction of the device can be achieved, and the same device can dynamically switch five logic functions without hardware change.

The invention discloses a ferroelectric thin film transistor based on aluminum scandium nitride, aluminum nitride and aluminum scandium nitride multilayer structures and a preparation method of the ferroelectric thin film transistor, and relates to the field of semiconductor devices and ferroelectric memories. The ferroelectric thin film transistor based on the aluminum scandium nitride, aluminum nitride and aluminum scandium nitride multilayer structure comprises a multilayer ferroelectric gate stack structure and a channel layer matched with the multilayer ferroelectric gate stack structure, and the multilayer ferroelectric gate stack structure is a symmetrical laminated structure of aluminum scandium nitride / aluminum nitride / aluminum scandium nitride. According to the ferroelectric thin film transistor based on the aluminum scandium nitride, aluminum nitride and aluminum scandium nitride multi-layer structure, a basis is provided for decoupling residual polarization and a coercive field and relieving negative effects brought by a depolarization field from the structural level through hierarchical cooperation of a laminated structure, and meanwhile, the ferroelectric thin film transistor is compatible with the assembly logic of a conventional semiconductor device; and a structural space is reserved for subsequent performance optimization and material replacement.

The application discloses an artificial solid electrolyte interface layer and a preparation method thereof, and a preparation method of a composite piezoelectric film, and comprises the following steps: uniformly mixing an organic copolymer, an inorganic piezoelectric phase and a solvent to obtain a composite precursor solution, uniformly coating the composite precursor solution on an inert substrate, drying after coating is completed, and obtaining a composite film on the inert substrate; applying an electric field to the composite film, simultaneously, performing polarization treatment on the composite film, cooling to room temperature, and obtaining a composite piezoelectric film on the inert substrate. By constructing the composite piezoelectric film with residual polarization orientation on the surface of the negative electrode, the 'field-force coupling' response of the composite piezoelectric film under the action of the electric field and the stress is utilized, the dynamic negative feedback regulation of the lithium metal negative electrode interface electric field and the ion distribution is realized, and thus the dendrite growth is effectively inhibited, the deposition uniformity is improved, and the cycle stability is improved.

This invention relates to the field of lens polarization testing technology, specifically to an optical lens residual polarization testing device. The device includes a detection mechanism, a moving mechanism, a first angle adjustment mechanism, and a second angle adjustment mechanism. The moving mechanism is mounted on top of the detection mechanism, the first angle adjustment mechanism is mounted on the moving mechanism, and the second angle adjustment mechanism is mounted on top of the first angle adjustment mechanism. This invention, through the first and second angle adjustment mechanisms, adjusts the angle of the optical lens in multiple dimensions, breaking through the limitations of the detection angle. It obtains residual polarization data of the optical lens from more dimensions, more accurately grasps the polarization characteristics of the lens, and can capture subtle changes in the lens's polarization performance under different incident light angles. This greatly improves the accuracy and comprehensiveness of the measurement, providing a solid data foundation for high-quality imaging and other functions of the lens in various fields.

The invention provides a low-working-voltage AlScN ferroelectric capacitor memory based on stress regulation and control and a preparation method thereof. The preparation method comprises the following steps: S1, cleaning and drying a silicon wafer substrate; s2, depositing a bottom metal film with a first thickness on the silicon wafer substrate; s3, growing an AlScN thin film with a second thickness on the bottom layer metal thin film, wherein the bottom layer metal thin film with the first thickness induces the AlScN thin film with the second thickness to be in a tensile strain state; s4, depositing a top metal film with a third thickness on the AlScN film; s5, photoetching patterning is carried out on the top layer metal thin film to obtain a hard mask protection layer; and S6, etching the top metal film with the hard mask protective layer, so that the method has the advantages of good film quality, high residual polarization value, excellent retention characteristic and the like while realizing low working voltage, and has great application potential in practical application of the ferroelectric capacitor memory.

The present invention relates to a ferroelectric capacitor comprising a praseodymium oxide oxygen buffer layer. The ferroelectric capacitor of the present invention comprises a lower electrode, an upper electrode, a hafnium zirconium oxide ferroelectric layer disposed between the two electrodes, and a praseodymium oxide oxygen buffer layer disposed between the ferroelectric layer and the electrode. The above praseodymium oxide oxygen buffer layer has multivalent valence characteristics in which Pr3+ and Pr4+ already coexist in a significant proportion immediately after crystallization annealing, and has fluorite (111) crystal planes that are lattice-matched with the orthogonal (111) crystal planes of hafnium zirconium oxide. Accordingly, the oxygen buffer layer functions as a crystal nucleation template that induces orthogonal (111) preferential orientation for the ferroelectric layer, and at the same time functions as a bidirectional oxygen ion reservoir that absorbs oxygen vacancies generated during repeated switching and resupplies oxygen when returning to the initial state. The ferroelectric capacitor according to the present invention exhibits a residual polarization of 40 ÌC / cm² or more under low voltage conditions of an applied voltage of 1.3 V or less, and simultaneously satisfies repeatability of 10 or more cycles, wake-up free characteristics, and data retention characteristics equivalent to 10 years in an 85 ℃ environment. In addition, it can be formed within a post-processing thermal budget of 500 ℃ or less and can be conformally applied to a 3D trench structure and a 3D stacked memory array.

The invention relates to the technical field of field effect transistor device design, in particular to an HZO-based CNT thin film transistor and a preparation method thereof.The HZO-based CNT thin film transistor structurally comprises a silicon-based substrate, a SiO2 masking layer, a gate electrode layer, an HZO gate dielectric layer, a CNT conducting channel layer and source and drain electrodes; specifically, an HfO2 / ZrO2 circulation ratio and an annealing process are optimized by adopting an atomic layer deposition (ALD) process, an HZO ferroelectric film with a high residual polarization value is prepared as a gate dielectric layer, and the gate control capability is amplified by utilizing the negative capacitance effect of the HZO ferroelectric film; meanwhile, a CNT conducting channel layer is constructed by adopting a solution deposition method, and finally the ferroelectric back gate CNT transistor is constructed by combining the CNT conducting channel layer and the CNT conducting channel layer. The silicon-based field effect transistor can break through the sub-threshold swing limit (60 mV / dec) of a traditional silicon-based field effect transistor, the switching ratio, the grid control efficiency, the switching characteristic, the energy efficiency and the like are remarkably improved, and the silicon-based field effect transistor is mainly used for manufacturing advanced integrated circuit devices with high performance and low power consumption.

The application provides an AlScN-based optical-ferroelectric synapse device and a preparation method. The device comprises, from bottom to top, a substrate, a bottom electrode, an AlScN ferroelectric layer and a top electrode. The device uses the characteristic that the polarization direction of the AlScN material can be reversed along the direction of an external electric field, realizes information writing through an electric pulse, uses the strong residual polarization characteristic of the AlScN material when the applied bias is zero, realizes accurate memory of information, uses the advantage of a wide band gap, realizes lossless reading of information in the day-blind ultraviolet band under zero bias, and the preparation method of the two-terminal device structure is simple.