84 results about "Residual polarization" patented technology

The invention belongs to the field of microelectronics, and particularly relates to a ferroelectric capacitor, a preparation method thereof and a three-dimensional ferroelectric memory array, and the ferroelectric capacitor comprises a substrate, a bottom electrode, a ferroelectric dielectric layer, a deoxidizing layer and a top electrode which are sequentially arranged from bottom to top; the ferroelectric medium layer is an Hf < 1-x > Zr < x > O < 2 > layer, 0 lt; xlt; the Hf-rich composition is realized by controlling the Hf: Zr super-cycle ratio of atomic layer deposition; the thickness of the ferroelectric medium layer is 1-6 nm, and the thickness of the bottom electrode is 0.1-5 nm. Compared with the prior art, the problems of polarization characteristic degradation caused by thinning of the ferroelectric layer in the hafnium-based ferroelectric capacitor and crosstalk in the FeRAM in the prior art are solved. According to the scheme, the oxygen vacancy concentration is accurately adjusted to inhibit the formation of a non-ferroelectric phase, so that the ultra-thin ferroelectric film can still maintain relatively high remanent polarization while the size is reduced, a storage window is effectively improved, and the wake-up requirement is reduced.

The invention discloses a method for realizing PUF (Physical Unclonable Function) by using homomorphic write-in of an FRAM (Frequency Random Access Memory) of a 2T2C structure, which comprises the following steps of: firstly, carrying out independent write-in operation on two ferroelectric capacitors and writing same data, and carrying out homomorphic storage; then, the two ferroelectric capacitors are recovered to different residual polarization states by using the manufacturing difference of the ferroelectric capacitors; then applying a reverse level to enable the two ferroelectric capacitors to reach a saturated polarization state from a residual polarization state; and finally, comparing a difference value delta I of the polarization current responses of the two ferroelectric capacitors, and outputting a corresponding binary numerical value according to the difference value delta I and a set judgment condition, thereby generating a random PUF response. According to the invention, the PUF response with high randomness and uniqueness is generated through homomorphic storage of the 2T2C FRAM and by using the polarization characteristic of the ferroelectric material.

The potassium sodium niobate-based ceramic material with excellent fatigue resistance disclosed in the present invention has a general chemical composition formula of: (1-x)K 0.5 Na 0.5 NbO3‑x(Sr 0.7 La 0.2 )(Mg 1 / 3 Nb 2 / 3 )O3; x represents the number of moles, and x is 0.03 to 0.12; the ceramic has a perovskite structure, a breakdown electric field of 230 to 400 kV / cm, and a maximum polarization strength of 29.6 to 34.1 μC / cm 2 , the residual polarization intensity is 4.1~7.4μC / cm 2 The present invention discloses a method for preparing a potassium sodium niobate-based ceramic material with excellent fatigue resistance, comprising the following steps: batching, primary ball milling, pre-sintering, secondary ball milling, tableting, cold isostatic pressing, and pressureless closed sintering. The potassium sodium niobate-based ceramic material of the present invention exhibits excellent energy storage performance and fatigue resistance. The ceramic material preparation method of the present invention is simple, reproducible, and has a high yield.

The preparation method of the dielectric energy storage capacitor and the dielectric energy storage capacitor provided in this application are prepared by 3.25 La 0.75 TiO 12 Ceramic thin film precursor solution, preparation of Bi 3.25 La 0.75 TiO 12 Ceramic thin film, depositing metal electrodes onto the Bi 3.25 La 0.75 TiO 12 The dielectric energy storage capacitor is obtained on the ceramic film. The preparation method of the dielectric energy storage capacitor adopts a lead-free material system, which reduces the pollution to the environment and the harm to the human body, expands the application of the system in the field of energy storage, and has a simple process. And by regulating the annealing process, the Bi 3.25 La 0.75 TiO 12 The synergistic effect of the preferential orientation and interface engineering achieves reduced residual polarization while improving the breakdown field strength, resulting in excellent energy storage density and efficiency.

This invention relates to the field of dielectric energy storage ceramics technology, specifically to a high-efficiency BiFeO3-BaTiO3-based relaxor energy storage ceramic, its preparation method, and its applications. The chemical composition of this material is 0.4Bi. 0.9 (Sm 0.5 Gd 0.5 ) 0.1 FeO3-(0.6-x)Sr 0.4 Ba 0.6 TiO3-xSr(Sn) 1 / 3 Zr 1 / 3 Hf 1 / 3 O3-y(40Bi2O3-40B2O3-20ZnO), abbreviated as BF-SBT-xS(SZH)-yBBZ, where x=0,0.05,0.08,0.10, and y takes values ​​of 0,3wt%), utilizes the synergistic refinement of polarization domains by multiple ions at the A and B sites and the reduction of remanent polarization (P r The value of Sr is used to improve energy storage efficiency (η). 2+ Ba 2+ Adjusting Curie temperature, dielectric constant, and temperature stability; introducing Sn 4+ Zr 4+ Hf 4+ This disrupts the localized structure at the B site, leading to relaxor ferroelectricity. Ultimately, compared to the matrix BiFeO3-BaTiO3, it significantly increases the breakdown field strength (E). b ), significantly increasing energy storage density (W). rec This reduces ferroelectric hysteresis and improves charging and discharging efficiency.

The application discloses a kind of Bi 3+ And Y 3+ Co-doped AgNbO3 antiferroelectric energy storage ceramic material and preparation method and application thereof, the chemical formula of the energy storage ceramic material is Ag 1‑3x Bi x Nb 1‑3x / 5 Y x O3, wherein 0 3+ And Y 3+ Co-doped AgNbO3 antiferroelectric energy storage ceramic material is in A / B site.The application also specifically discloses preparation method of the Bi 3+ And Y 3+ Co-doped AgNbO3 antiferroelectric energy storage ceramic material and application thereof in preparation of ceramic capacitor.The application prepares AgNbO3-based antiferroelectric energy storage ceramic material with pbcm space group perovskite structure by simple, easy-to-implement technical process, improves its breakdown field strength (E b ) While also reducing the remanent polarization value (P r ), and can effectively improve energy storage density and the stability of antiferroelectric phase at room temperature.

The application relates to the technical field of ferroelectric materials, and discloses a resilient ferroelectric body as well as a preparation method and application thereof. The resilient ferroelectric body comprises a ferroelectric material and a crosslinking agent; the mass ratio of the ferroelectric body to the crosslinking agent is 3-50:1; and the crosslinking density of the resilient ferroelectric body is 0.01-20%. The preparation method comprises the following steps: dissolving and mixing the ferroelectric material and the crosslinking agent, and then performing covalent crosslinking to obtain the resilient ferroelectric body. In the application, a trace amount of crosslinking agent is mixed with the ferroelectric material to obtain a ferroelectric body with a network structure and reversible inversion of ferroelectric domains; finally, the obtained ferroelectric body has excellent resilience and flexibility, higher residual polarization strength, higher thermal stability, shorter switching time, and excellent comprehensive performance.

The invention provides a high-resolution broadband integrated spectrometer based on thin film lead zirconate titanate and a preparation method, and relates to the technical field of integrated optics. The structure of the spectrometer comprises a substrate; the silicon dioxide lower cladding layer is arranged on the substrate; the lead zirconate titanate thin film waveguide layer is arranged on the silicon dioxide lower cladding, a plurality of micro-ring resonators and a plurality of array waveguide gratings are arranged in the lead zirconate titanate thin film waveguide layer, and each array waveguide grating is connected with each micro-ring resonator through a waveguide; the sectional periodic metal electrode arrangement system is arranged in each section of straight waveguide area in the micro-ring resonator; wherein the plurality of micro-ring resonators are configured with resonant wavelengths which are distributed in a staggered manner, and the interval between the adjacent resonant wavelengths is 1 / n of the interval between the array waveguide grating channels; the spectrometer is configured to change the local waveguide refractive index by using the residual polarization effect of the lead zirconate titanate thin film through a segmented polarization method so as to realize alignment of the resonant wavelength and the center of the array waveguide grating channel.

The invention relates to a superlattice ferroelectric enhancement structure in a hafnium oxide-based film as well as a preparation method and application thereof, and aims to realize remarkable improvement of ferroelectric properties of a hafnium oxide-doped film by stabilizing a ferroelectric orthogonal phase. The superlattice structure of the doped hafnium oxide thin film comprises bottom electrode layers and doped hafnium oxide thin film layers, wherein the bottom electrode layers are sequentially arranged in the direction perpendicular to the substrate, and the doped hafnium oxide thin film layers are alternately stacked. The superlattice interface engineering prepared through the atomic layer deposition or magnetron sputtering technology can effectively inhibit generation of non-ferroelectric phases (such as a monoclinic phase and a tetragonal phase), so that ferroelectric remanent polarization is remarkably enhanced. According to the doped hafnium oxide thin film device based on the superlattice structure, the voltage difference in the polarization inversion period can be enhanced, the state distinguishing in the reading operation period can be improved, the reading error rate can be reduced, the charge density stored in the unit area can be increased, the device size can be reduced, and the device performance can be improved. Therefore, the integration density and the storage density of the ferroelectric-based memory are improved.

The invention provides a neural network training method and device, equipment and a medium, and the method comprises the following steps: 1, obtaining training data of an image, voice or text type, and carrying out the normalization and feature extraction processing; according to the invention, the three-terminal two-dimensional photoelectric synapse device is prepared, a single / double input mode is supported, cooperative regulation and control of an optical pulse sequence and a grid electric signal sequence are realized, the problem that the multi-mode processing capability of a traditional double-terminal device is limited is solved, and the complex feature extraction efficiency is improved; the nonvolatile storage of synaptic weight is realized through the ferroelectric regulation and control layer, and the remanent polarization of the ferroelectric regulation and control layer is Prgt; 5 [mu] C / cm < 2 > and erasing durability gt; 106 cycles are carried out, continuous power supply is not needed, and training power consumption and cost are reduced; through the high carrier mobility (gt, 200cm < 2 > / Vs) and nanosecond-level photoresponse characteristics (carrier lifetime lt, 10ns) of the two-dimensional photosensitive layer (such as MoS2 / WSe2), the response speed of the device is increased to nanosecond level, and the training requirement of a high-speed neural network is met.

This invention discloses a method and apparatus for awakening the polarization of a large-area ferroelectric capacitor at the wafer level. The wafer consists of a bottom electrode, a ferroelectric layer, and a patterned, independent top electrode array stacked sequentially from bottom to top. The bottom electrode is electrically connected to one end of a pulse voltage generator, and the conductive film on the surface of a flexible conductive roller is electrically connected to the other end of the pulse voltage generator. By controlling the horizontal movement of the wafer stage, the flexible conductive roller is driven to roll and contact the surface of the top electrode array; simultaneously, a preset pulse voltage is applied between the bottom electrode and the conductive film using the pulse voltage generator, increasing the ferroelectric remanent polarization intensity of the ferroelectric film covered by the top electrode in the contact area, thus achieving ferroelectric polarization awakening. This invention, after a high-temperature heat treatment at over 200°C, efficiently and over a large area awakens the polarization of the ferroelectric film corresponding to the top electrode array, ensuring high stability and consistency in its ferroelectric remanent polarization intensity.

The application discloses an electrode structure and a polarization method for an ultrathin back gate ferroelectric dielectric layer, which comprises a source electrode, a drain electrode and a gate electrode; a channel is arranged on the upper surface of the ferroelectric dielectric layer, the source electrode and the drain electrode are arranged at two ends of the channel respectively, and the gate electrode is arranged on the lower surface of the ferroelectric dielectric layer; a first polarization pulse input port is arranged between the source electrode and the gate electrode, and a second polarization pulse input port is arranged between the drain electrode and the gate electrode. The application solves the problems that the low breakdown strength is introduced due to the ultrathin thickness of the ferroelectric film, and the polarization electric field cannot be applied to the vertical channel due to the back gate structure, so that the polarization is insufficient, realizes the regulation and control of the polarization performance of the hafnium-based ultrathin ferroelectric film serving as a back gate dielectric layer in a field effect transistor, further improves the reliability and stability of the residual polarization field, and has important significance for constructing a floating gate structure of a field effect device and inhibiting device leakage and power consumption.

The invention discloses a memory cell structure and a preparation method thereof, and a ferroelectric memory. The memory cell structure comprises a selective switch transistor, a nano forest structure, a capacitor structure and a wiring layer, wherein the selective switch transistor is positioned on the substrate; the capacitor structure is located above the selective switch transistor, the capacitor structure covers the surface of the nano forest structure, the capacitor structure comprises a first electrode and a second electrode, and the first electrode is electrically connected with a source electrode of the selective switch transistor; the wiring layer is located above the capacitor structure, the wiring layer comprises a bit line and a plate line, the plate line is electrically connected with the second electrode of the capacitor structure, and the bit line is electrically connected with the drain electrode of the selective switch transistor. The surface area of the ferroelectric material on the unit device area is increased, so that the residual polarization is improved, the storage window of the ferroelectric memory is increased, and the performance of the ferroelectric memory is improved.

The invention provides a ferroelectric memory and a preparation method thereof. The preparation method comprises the following steps: S1, depositing a bottom electrode layer on a substrate through an ion beam sputtering process; s2, depositing a ferroelectric layer through a magnetron sputtering process; in the ferroelectric layer deposition process, the oxygen content in the deposition atmosphere is adjusted by controlling the oxygen introduction amount, and then the concentration of oxygen vacancies in the ferroelectric layer is adjusted and controlled; s3, carrying out photoetching on the device; s4, depositing a top electrode layer through an ion beam sputtering process, and removing redundant photoresist and redundant metal to obtain a ferroelectric memory; between the S1 and the S2 or between the S2 and the S3, the method also comprises the following steps: depositing an oxide as an interface intercalation through an atomic layer deposition process. According to the invention, the problems of unstable interface and obvious wake-up effect caused by a large number of oxygen vacancies generated by the reaction of the electrode and the ferroelectric layer in the traditional ferroelectric memory structure are effectively solved, and the preparation of the high-performance ferroelectric memory with high residual polarization and high reliability is realized.

To provide an actuator that can suppress a decrease in the increment of the displacement of a diaphragm even when an increased voltage is applied between a first electrode and a second electrode.SOLUTION: An actuator includes a vibration plate, a first electrode provided above the vibration plate, a piezoelectric layer provided above the first electrode and including a complex oxide having a perovskite structure, and a second electrode provided above the piezoelectric layer, and the remanent polarization of the piezoelectric layer is 0.535 times or less of a spontaneous polarization of the piezoelectric layer.SELECTED DRAWING: Figure 2

The invention is suitable for the technical field of PZT piezoelectric ceramics, and provides a PZT piezoelectric film and a preparation method thereof.The preparation method comprises the following steps that PZT sol is prepared, specifically, the PZT sol is prepared from ethylene glycol monomethyl ether, lead acetate trihydrate, zirconium nitrate and tetrabutyl titanate; sol spin coating and heat treatment: carrying out spin coating and heat treatment on the prepared PZT sol; and annealing treatment: carrying out low-temperature and high-temperature annealing treatment on the basis of multiple times of spin coating and multiple times of annealing. The improved annealing process of low-temperature and high-temperature annealing is carried out on the basis of the multi-layer spin coating and multi-time annealing process, the PZT thin film subjected to low-temperature and high-temperature annealing is compact in structure and free of obvious boundary layers, gaps and cracks, and the remanent polarization of the thin film can reach 17.2 mu c / cm < 2 > at most and reaches the research level of peers at home and abroad.

The invention relates to a ferroelectric memory device manufacturing method of an annealing-free hafnium oxide thin film, a ferroelectric memory, a memory chip and electronic equipment. The method comprises the following steps: depositing a first electrode layer on a substrate; depositing a hafnium oxide-based ferroelectric film layer on the first electrode layer; a second electrode layer is deposited on the hafnium oxide-based ferroelectric film layer, the second electrode layer is etched to obtain a patterned metal top electrode, and the reaction temperature for depositing the first electrode layer, the hafnium oxide-based ferroelectric film layer and the second electrode layer is smaller than or equal to the highest temperature of the semiconductor back-end process. According to the embodiment of the invention, an annealing process step in the manufacturing of the ferroelectric memory device can be omitted, so that the preparation cost is reduced, and the ferroelectric memory device is ensured to have high remanent polarization under a preparation process with low thermal budget.

The application relates to a multilevel storage ferroelectric memory based on AlScN film and a preparation method thereof, which comprises a lower electrode (1), an Al 1‑x Sc x N film layer (2), an Al 1‑y Sc y N film layer (3) and an upper electrode (4), wherein the Al 1‑x Sc x N film layer (2) is located on the lower electrode (1); the Al 1‑y Sc y N film layer (3) is located on the Al 1‑x Sc x N film layer (2), x is not equal to y, and the diameter of the Al 1‑y Sc y N film layer (3) is smaller than that of the Al 1‑ x Sc x N film layer (2); the upper electrode (4) is located on the Al 1‑x Sc x N film layer (2) and the Al 1‑y Sc y N film layer (3). The ferroelectric memory adopts Al 1‑x Sc x N film layers and Al 1‑y Sc y N film layers to form double-layer films, the components of the two-layer films are ensured to be different by controlling the content of Sc elements, that is, x and y, so that the second layer Al 1‑y Sc y N film changes the remanent polarization intensity of the first layer Al 1‑ x Sc x N film, and realizes the intermediate state of multilevel storage.

The invention discloses a nitrogen pole type ferroelectric nitride multi-valued storage capacitor which mainly solves the problems that an existing ferroelectric storage capacitor is poor in reliability, low in storage efficiency, low in storage density and difficult to be compatible with a CMOS process. The device comprises a substrate, a buffer layer and a contact layer from bottom to top. A ferroelectric material layer is arranged in the middle above the contact layer, and the half side of the ferroelectric material layer is etched to form a table surface so as to realize output of different storage states; first electrodes are arranged on the two sides of the upper portion of the contact layer so as to control the change of the storage state of the ferroelectric material layer. And a top electrode contact layer and a second electrode which are grown in situ are arranged above the ferroelectric material layer so as to realize the transmission of a storage state and the output of storage data. According to the invention, multi-valued logic storage is realized by using asynchronous change of polarization states of ferroelectric material layers with different thicknesses; the stability, the storage efficiency and the process compatibility of the ferroelectric memory are improved by utilizing the single crystal nitride ferroelectric material with high remanent polarization, high Curie temperature and high breakdown voltage, and the ferroelectric memory can be used for a digital storage circuit.

The present invention discloses a tantalum-doped hafnium dioxide ferroelectric film, its preparation method and application. Ta metal target and HfO2 ceramic target are used in a multi-target co-magnetron sputtering device. By controlling the sputtering power, Ta:HfO2 films with different Ta doping ratios are obtained. In addition, by adjusting the sputtering power and the working gas Ar:O2 ratio, the residual polarization intensity P of the Ta:HfO2 film can be adjusted. r Can reach 100 μC / cm 2 , a 4-10-fold improvement compared to data reported in the literature. This method, applied to biomimetic synaptic devices, achieved the ability to switch between long-term potentiation and inhibition by controlling the oxygen flow during functional layer growth, adjusting the width of electrical pulses during synaptic testing, and varying the value of an external series resistor. This invention broadens the range of materials available for the dielectric layer of biomimetic synaptic devices, and the proposed synaptic device structure is simple and stable, making it suitable for large-scale industrial production.

The invention relates to an intelligent metasurface design and detection method for an optical part, and the method comprises the steps: generating a superposed signal containing a high-frequency detection signal sequence and a low-frequency driving signal sequence, and loading the superposed signal to a liquid crystal metasurface unit; a feedback current signal generated by the liquid crystal metasurface unit is collected in real time, and a capacitive reactive current component having a phase difference with the high-frequency detection signal sequence is separated from the feedback current signal; determining an actual optical phase according to the signal change trend of the low-frequency driving signal sequence and the capacitive reactive current component or a preset step-down mapping logic; extracting a direct-current bias component in the feedback current signal, performing time domain accumulation calculation on the direct-current bias component to determine the ion migration degree in the liquid crystal, and generating a compensation bias voltage for offsetting an internal residual polarization field according to the ion migration degree; and dynamically adjusting the amplitude of the low-frequency driving signal sequence according to the deviation value of the actual optical phase and the target phase in combination with the compensation bias voltage.

[Problem] To provide a polymer, an aromatic polyamide, a molded object, and a film which have excellent piezoelectric properties and mechanical properties. [Solution] A polymer that has a repeating unit in which hydrogen-bonding groups are bonded to ring-member atoms and the number of atoms present on the shortest of paths which each connect an atom of one hydrogen-bonding group to an atom of another hydrogen-bonding group is an odd number, and that has a residual polarization of 15 mC / m2 to 300 mC / m2.

The invention provides a hafnium-based ferroelectric capacitor device and a preparation method thereof. The preparation method of the hafnium-based ferroelectric capacitor comprises the following steps: S1, preparing a lower electrode on a substrate layer; s2, an oxygen vacancy introduced hafnium-based dielectric layer is prepared on the upper electrode through the ALD technology, and the oxygen source flow of the ALD technology is 50-90% of the standard flow; and S3, preparing an upper electrode on the hafnium-based dielectric layer. The oxygen vacancies are introduced into the hafnium-based dielectric layer, crystallization of the ferroelectric O phase can be achieved at the low annealing temperature, the prepared hafnium-based ferroelectric capacitor has the large remanent polarization, the process preparation cost of the hafnium-based ferroelectric capacitor is reduced, and the service life of the hafnium-based ferroelectric capacitor is prolonged. And meanwhile, the application of the hafnium-based ferroelectric capacitor device in a large-scale integrated circuit is improved, especially for a system material needing a relatively low process temperature.

This application discloses a method, apparatus, medium, and product for recovering fatigue effects of hafnium-based ferroelectric capacitors, relating to the fields of semiconductor devices and integrated circuit technology. The method includes: determining a hybrid recovery pulse sequence; obtaining the initial polarization intensity of the target hafnium-based ferroelectric memory; after performing read / write operations on the target hafnium-based ferroelectric memory, obtaining the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as a first residual polarization intensity; determining whether the target hafnium-based ferroelectric memory is in a fatigue state based on the first residual polarization intensity and the initial polarization intensity; and when the target hafnium-based ferroelectric memory is in a fatigue state, applying a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory. This application utilizes a hybrid recovery pulse sequence to recover fatigue effects of hafnium-based ferroelectric capacitors, which can improve the polarization intensity recovery effect and the durability of the hafnium-based ferroelectric memory.

The application provides a hafnium-based ferroelectric memristor, a preparation method and application thereof. The application relates to the application fields of ferroelectric memristors, neural networks and the like in microelectronic and thin film material science, and innovatively epitaxially grows a Y:HfO2 thin film on a single crystal 0.5%Nb:SrTiO3 (NSTO)<111> substrate. Yttrium doping can adjust the crystal phase structure of the hafnium oxide thin film, significantly increase the ferroelectricity of the thin film, reduce the leakage current, effectively improve the residual polarization intensity and stability of the device, and realize low power consumption, high durability, high ferroelectricity and stability. The application also designs a peripheral circuit based on the multi-resistance state stability characteristics of the HYO ferroelectric memristor to perform multiplication and addition reading operation on the memristor array, and innovatively designs a neural morphological computing system based on the HYO ferroelectric memristor, and applies the memristor neural network to the tracking work of an intelligent vehicle.

The embodiment of the invention relates to a nonvolatile memory based on a ferroelectric thin film transistor and a preparation method of the nonvolatile memory. The preparation method comprises the step of growing a heterogeneous multi-layer thin film (including a ferroelectric layer) by adopting a plasma enhanced atomic layer deposition (PE-ALD) process. According to the ferroelectric thin film transistor epitaxially grown through the PE-ALD technology, the threshold voltage of the transistor is directly changed through the polarization state of a ferroelectric layer, the residual polarization of the ferroelectric layer maintains the electrical state of the transistor after grid voltage programming and erasing operation, and therefore nonvolatile storage is achieved. The thermal budget of the PE-ALD process is relatively low, the crystallization quality of the thin film is high, and 3D device integration can be realized.

This invention discloses a ferroelectric thin-film transistor based on a multilayer structure of aluminum scandium nitride, aluminum nitride, and aluminum scandium nitride, and its fabrication method, relating to the fields of semiconductor devices and ferroelectric memories. The ferroelectric thin-film transistor based on the multilayer structure includes a multilayer ferroelectric gate stack structure and a channel layer that cooperates with the multilayer ferroelectric gate stack structure. The multilayer ferroelectric gate stack structure is a symmetrical stacked structure of aluminum scandium nitride / aluminum nitride / aluminum scandium nitride. This ferroelectric thin-film transistor based on the multilayer structure provides a structural basis for decoupling residual polarization and coercive field and mitigating the negative impact of depolarization field through the hierarchical cooperation of the stacked structure. It is also compatible with the assembly logic of conventional semiconductor devices, reserving structural space for subsequent performance optimization and material replacement.

The present invention provides a sodium bismuth titanate-based high-entropy energy storage ceramic material and a preparation method thereof, belonging to the technical field of dielectric functional ceramic materials. The high-entropy energy storage ceramic material provided by the present invention is based on Bi 0.5 Na 0.5 TiO3, and six elements of Bi, Na, Ba, La, Sr and K are designed at its A site, wherein Ba 2+ , La 3+ ion doping is beneficial to reducing the sintering temperature and decreasing the grain size. Sr 2+ ion doping can enhance the dielectric relaxation characteristics. K + ion doping helps to further destroy the long-range ordered structure and form a polar nano-microregion (PNRs) structure, so that the material obtains comprehensive properties of low remanent polarization, high breakdown field strength and slender P-E hysteresis loop, thereby improving the energy storage performance of the material.

Embodiments of the present application relate to a ferroelectric thin film transistor based nonvolatile memory and a preparation method thereof. A hetero-multilayer thin film (including a ferroelectric layer) is grown by using a plasma enhanced atomic layer deposition (PE-ALD) process. The ferroelectric thin film transistor grown by using the PE-ALD process has a polarization state of the ferroelectric layer directly changing a threshold voltage of the transistor, and a residual polarization of the ferroelectric layer maintaining an electrical state of the transistor after a gate voltage programming and erasing operation, so as to realize nonvolatile storage. The PE-ALD process has a relatively low heat budget, a high thin film crystallization quality, and can realize 3D device integration.

The invention relates to the technical field of microelectronics, in particular to a low-temperature annealing ferroelectric capacitor device and a preparation method thereof. The low-temperature annealing ferroelectric capacitor device comprises a lower electrode, a lower interface modification layer, a ferroelectric dielectric layer, an upper interface modification layer and an upper electrode which are sequentially deposited on a substrate layer. By growing the interface modification layer on the interface between the ferroelectric dielectric layer and the upper and lower electrodes, the annealing temperature required in the post-annealing stage in the preparation process of the ferroelectric capacitor can be effectively reduced, and the ferroelectric capacitor still has relatively high remanent polarization after annealing, so that the process cost required for large-scale preparation of the ferroelectric capacitor is reduced, and the production efficiency is improved. And the application scene of the ferroelectric memory device is expanded.