64results about How to "Flat and dense surface" patented technology

The invention discloses a preparation method for a copper zinc tin sulfide thin film material. The preparation method comprises the following steps of: performing oil removal, electrochemical polishing and activation pretreatment on the surface of a copper foil substrate; depositing metallic zinc and tin by using one of a magnetron sputtering method, an evaporation method, a pulsed laser deposition method and an electrodeposition method to form a metallic preformed layer; annealing the metallic preformed layer in a sulfur-containing protective atmosphere at high temperature; and placing the annealed metallic preformed layer in an alkaline KCN solution for etching. By the preparation method, a copper belt is adopted as a flexible substrate and a back contact conductive material, so that the usage of expensive metallic molybdenum is greatly reduced, and production cost is decreased; and a Cu-S phase formed by excessive copper is favorable for the growth of copper zinc tin sulfide crystal grains, reduces charge carrier recombination centers and improves photoelectric conversion efficiency. The copper zinc tin sulfide thin film material prepared by the method is easy to produce in large scale, and can be popularized and applied in a thin film solar cell industry.

This invention discloses a method for preparing highly (111)-oriented PZT thin film. The method can solve the problems of complex process and low repeatability faced by sol-gel method. The method comprises: preparing PZT sol, depositing PZT thin film, pre-crystallizing PZT thin film, and crystallizing PZT thin film. The method is simple. The obtained PZT thin film has compact and smooth surface, uniform thickness, uniform grain sizes, high residual polarization value (43-60 muC/cm2), low coercive field (60-75 kV/cm), and high saturated polarization value.

The invention discloses a method for forming a composite material by a matched mold, aiming to solve the problems that a composite material formed by an existing method is uneven in surface and insufficient in compactness. The method comprises the following steps: firstly, laying a prepreg layer of the composite material on the surface of an inner mold on a lower mold of a metal mold, and laying expansion rubber uniformly on the outer layer of the prepreg layer of the composite material; secondly, combining an outer mold with the outer layer of the expansion rubber, and combining the outer mold closely at the outer side of the outer mold by a mold combining ring, and covering the upper mold tightly, thereby obtaining the packaged mold; and thirdly, putting the packaged mold in the second step into a curing furnace, curing, then taking the mold out, cooling to room temperature, and demolding, thereby obtaining the formed composite material. The method is used for forming the composite material.

The invention relates to the manufacturing field of a circuit board, and specifically relates to a heat dissipation circuit board embedded with ceramic and a preparation method of the circuit board. The preparation method of the heat dissipation circuit board embedded with ceramic at least comprises the following steps of a, processing of copper-clad plates: putting a prepreg between two one-sidedcopper-clad plates and then performing fixation by a rivet, and processing windows in the one-sided copper-clad plates; b, processing of a ceramic substrate: plating a titanium layer on the upper andlower surfaces of the ceramic substrate through a first sputtering process separately, then plating a first copper layer through a second sputtering process, next, plating a second copper layer by afirst electroplating process, and finally cutting into ceramic blocks, wherein the dimensions of the ceramic blocks are matched with those of the windows; and c, lamination: embedding the cut ceramicblocks into the widows and then performing lamination; d, hole drilling: processing conductive holes in the one-sided copper-clad plates; and e, copper plating: depositing a third copper layer in theconductive holes through a chemical copper plating way and then plating a fourth copper layer through a second electroplating process.

The invention relates to the technical field of thin-film preparation, particularly relates to a preparation method of a Ta-C-N thin-film, which comprises the following steps: performing surface activation on a monocrystalline silicon substrate by using a conventional process, separately placing a Ta target, a graphite target and the silicon substrate into a main sputtering chamber and a sample injection chamber, vacuumizing the sputtering chamber and the sample injection chamber, and pre-sputtering the Ta target and the graphite target to remove surface impurities; adjusting the ratio of nitrogen gas flow to argon gas flow (sccm) to 1:(10-100); adjusting the distance between the substrate and the targets to 5-10 centimeters; regulating the Ta target sputtering power to 80-150 W to do firing sputter, regulating the graphite target sputtering power to 100-200 W to do firing sputter, and producing the thin film by adopting simultaneous sputtering and layered sputtering process; and taking the test sample out from the main sputtering chamber to obtain the non-crystalline Ta-C-N ternary thin-film. The preparation method provided by the invention has the characteristics of simple process, short synthesis time, and on the like and is easy to implement.

The invention relates to a preparation method and application of a titanium dioxide modified lead dioxide electrode, and belongs to the technical field of electrode materials. The method comprises the following steps: cleaning a titanium plate, then roughening the titanium plate, steeping the titanium plate into an oxalic acid aqueous solution to remove an oxide layer, finally cleaning the titanium plate with deionized water, and blowing the titanium plate to dry; coating the treated titanium plate with a solution containing tin ions and antimony ions, carrying out sintering, and repeating the coating and sintering processes for multiple times to obtain a titanium plate with a coated middle layer; carrying out electro-deposition by using a lead plate as a negative electrode, the titanium plate as a positive electrode with the coated middle layer and a TiO2 particle-containing Pb(NO3)2 and NaF mixed solution as an electro-deposition solution, thus obtaining the electrode. The electrode preparation process is simple, convenient to operate and low in comprehensive cost; the prepared electrode fully develops the photoelectric synergistic catalytic action of TiO2 and PbO2, is outstanding in effect of degrading an azo-organic dye, and is long in service life.

The invention relates to a safe and environment-friendly type abrasion-resistant self-cleaning latex paint and a preparation method thereof. The latex paint is prepared from the following components in parts by weight: 390 to 420 parts of emulsion, 20 to 30 parts of film forming additive, 5 to 50 parts of silicon sol, 2 to 4 parts of multifunctional ammine additive, 5 to 10 parts of hydrophobic agent, 2 to 5 parts of wetting agent, 7 to 8 parts of dispersant, 2 to 5 parts of defoaming agent, 1 to 3 parts of cellulose, 2 to 4 parts of thickener, 240 to 260 parts of inorganic filler, 250 to 270 parts of water, 2 to 4 parts of preservative, 1 to 2 parts of anti-mildewing agent and 15 to 20 parts of propylene glycol. Compared with the prior art, the latex paint has the advantages that the compactness of a paint film is good, the hardness is high, the abrasion-resistant property is good, static electricity is not produced, and various dust in air is difficult to adhere; the preparation method is simple, the controllability is good, the green and environment-friendly effect is achieved, the technical defect of poor dirt resistance in a latex paint is effectively overcome, the service life of the latex paint is prolonged, the economy is good, the industrialized expanding production is easy, and the application prospect is good.

The invention discloses a method for preparing a superconducting layer of a high-temperature superconducting coated conductor by depositing fluorine-free chemical solution. The method comprises the following steps of: a, preparation of precursor solution; b, the preparation of coating colloid; c, coating and drying; d, wet-type decomposition heat treatment, namely placing a substrate with a film into a tubular finance; rising the temperature to be between 100 and 150 DEG C from room temperature at the speed of 1-5DEG C/min under the protection of an argon atmosphere; introducing a mixed gas of water vapor and argon with the dew point of between 10 to 20 DEG C into the furnace to form a wet argon protective atmosphere; rising the temperature to be between 450 and 500 DEG C at the speed of 0.25 to 1.5DEG C/min; keeping the temperature for 0.5 to 2 hours; cooling to the room temperature in the argon atmosphere; and e, phase formation and heat treatment to obtain the superconducting layer. The critical current density of the superconducting layer of the high-temperature superconducting coated conductor prepared by the method is up to the same magnitude order as the that of the superconducting layer prepared by a fluorine-containing method; the superconducting layer has a high-degree biaxially texture and a flat and dense surface; and the method is easy to prepare a thicker superconducting layer and has the characteristics of low cost, simple process and suitability of large-scale industrial production.

The invention discloses a method for enlarging a metal interconnected lithography process window. The metal interconnection is realized through a dual-damascenes structure which comprises through holes and grooves. The grooves are formed from a hard mask by a lithography process. The hard mask comprises a low-temperature oxide layer and an organic bottom antireflection coating which is formed above the low-temperature oxide layer, wherein after the low-temperature oxide layer is formed by a deposition process, the surface of the low-temperature oxide layer is processed by using active gas plasmas so as to improve the adhesion between the low-temperature oxide layer and the organic bottom antireflection coating.

A La2Zr2O7 transition-layer gradient film structure, preparation and application thereof belong to the technical field of a high-temperature superconductive coating material. According to the La2Zr2O7 transition-layer film provided by the invention, the lower layer is a La2Zr2-xTixO7 film doped with Ti<4+> having small ionic radius, wherein x is less than or equal to 1.8 and greater than or equal to 0.2; and the upper layer is a La2Zr2-yYyO7 film doped with Y<3+> having large ionic radius, wherein y is less than or equal to 1.8 and greater than or equal to 0.2. Through different doping contents, 100% matching between the film and a substrate Ni and a superconducting layer YBCO is realized, and the transition-layer structure of lattice constant gradient change is realized. In addition, the transition layer is the same bulk material and has more stable performance. Lattice constants of the La2Zr2-xTixO7 film and the La2Zr2-yYyO7 film are accurate and adjustable. Integration of multiple transition-layer functions is achieved, and complexity of a present transition-layer structure is minimized.

The invention discloses a method for continuously preparing a second generation high-temperature superconducting tape transition layer with double-side texture. The method comprises the following steps: cerous nitrate or rare-earth nitrate is dissolved in N,N-dimethylformamide (DMF) to obtain precursor solution; polyacrylic acid (PPA) or polymethacrylic acid is added to the precursor solution to prepare colloid; Ni alloy base band is wound to pass through the prepared colloid, and after the base band is taken out, the colloid is evenly dipped and coated on the surface of the base band and then dried; and finally, the base band is placed in a sintering furnace for molding. The method helps realize the continuous preparation and the high preparation efficiency of the high-temperature superconducting transition layer, and is suitable for mass industrialized production; meanwhile, the prepared double-side tape transition layer film has the advantages of good consistency, good evenness, high degree of orientation and high surface smoothness; and the critical thickness of the transition layer is thick.

The invention relates to matte type high-staining-resistance coating varnish and a preparation method thereof. The matte type high-staining-resistance coating varnish comprises, by weight, 5-10 partsof butyl acrylate, 2-5 parts of styrene, 15-25 parts of methyl methacrylate, 2-5 parts of 2-ethylhexyl acrylate, 20-30 parts of emulsion, 10-30 parts of deionized water, 0.1-0.3 part of pH regulator,0.1-0.3 part of mildew preventive, 0.1-0.2 part of defoaming agent, 0.6-2 parts of coalescing agent, 0.8-1.5 parts of anti-freezing agent, 0.3-1 part of thickening agent, 8-12 parts of compound inorganic adhesive and 0.5-2.0 parts of nano staining-resisting agent. Compared with the prior art, the matte type high-staining-resistance coating varnish and the preparation method thereof have the advantages that the nano staining-resisting agent and the compound inorganic adhesive are added into traditional waterborne matte coating varnish using acrylate copolymer resin as the main component, and the staining resistance of the varnish is improved greatly by the synergistic effect of the nano staining-resisting agent and the compound inorganic adhesive.

The invention provides a simple preparation method for a mordenite membrane with a low silica-alumina ratio. The invention mainly aims to solve the problems of poor membrane surface hydrophilicity andlow permeation flux due to high silica-alumina ratio of a zeolite membrane. The simple preparation method is mainly characterized by comprising the following steps: loading large and small seed crystals onto a macroporous alpha-Al2O3 carrier tube so as to prepare a seed crystal tube with flat surface, then pre-adsorbing deionized water onto a seed crystal layer and a ceramic tube supporting layeron the seed crystal tube through the action of capillary coacervation, and synthesizing the mordenite membrane through a secondary growth method. The method provided by the invention effectively reduces the silica-alumina ratio of the surface of the mordenite membrane, increases the compactness of the membrane, and reduces the thickness of the membrane at the same time. In an ethanol/aqueous solution with a concentration of 92 wt.%, the membrane shows excellent separation performance and is significantly improved in permeation flux; meanwhile, the mordenite membrane shows good acid resistancein an HCl or acetic acid solution with a concentration of 1 mol/L.

The invention relates to an azobenzene derivative, a solar thermal energy fuel film composite material and a preparation method and application thereof, discloses a series of azobenzene derivatives, and provides a method for preparing a photo-induced phase change ready-to-use solar thermal energy fuel film through the azobenzene derivatives. The prepared solar thermal energy fuel composite film has good mechanical flexibility, photoisomerization effect and energy storage capacity. The composite film can rapidly generate cis-trans isomerization to store energy under the irradiation of an ultraviolet lamp, the stored energy is gradually increased along with the prolonging of irradiation time, the full state can be achieved within about 2 hours, the energy density can reach 200 J/g or above,and the temperature of the composite film can be continuously increased by about 5 DEG C. The charging/discharging process has very good reversibility, and no obvious attenuation exists after the energy is circularly charged/discharged for more than 5 times. The composite material has the advantages of simple preparation process, environmental friendliness, easily available materials, large heat release amount, good mechanical flexibility, strong acid and alkali corrosion resistance, good recycling performance and the like.