A preparation method of a solar cell thin film

A technology for solar cells and thin films, applied in the field of solar cell materials, can solve the problems of low photoelectric conversion rate and poor stability of solar cell thin films, and achieve the effects of improving photoelectric conversion efficiency, improving stability and improving surface roughness.

Inactive Publication Date: 2018-12-25
FOSHAN TENGLI NEW ENERGY TECH CO LTD
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AI Technical Summary

Problems solved by technology

[0003] Technical problem to be solved by the present invention: Aiming at the problems of low photoelectric conversion rate and poor stability of current solar cell films, a method for preparing solar cell films is provided

Method used

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preparation example Construction

[0020] A method for preparing a solar cell film, comprising the steps of:

[0021] (1) Take zinc acetate and add methanol according to the mass ratio of 1~3:9~15, stir and mix at 60~65°C for 30~50min to obtain the mixture a, take potassium hydroxide and add it according to the mass ratio of 1~4:20~30 Methanol, stir and mix at 60~65°C for 20~30min to obtain the mixed solution b, take the mixed solution b and drop it into the mixed solution a according to the mass ratio of 4~7:2~5, control the dropping time for 15~20min, stir and mix for 1 ~3h, stand still for 4~7h, take the precipitate and add n-butanol according to the mass ratio of 1~3:10~15, then add methanol with 6~8% n-butanol mass and chloroform with 5~7% n-butanol mass, stir Mix for 20-30 minutes to obtain a mixture;

[0022] (2) Take the mixed liquid and add tin tetrachloride pentahydrate according to the mass ratio of 100~120:1~3, stir and mix at 25~30°C for 2~3 hours, and leave it to age for 18~24 hours to obtain the...

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Abstract

The invention discloses a preparation method of a solar cell thin film, belonging to the field of solar cell materials. Zinc acetate and potassium hydroxide are taken as raw material, the nano zinc oxide particles are introduced into the thin film, lead iodide is added, tin tetrachloride is doped, and the substrate is formed by annealing, thereby effectively suppressing recombination of electron-hole pairs at the interface between a perovskite layer and ZnO, and greatly improving the electron transport efficiency and the photoelectric conversion efficiency. On the basis of the formation of theperovskite structure solar cell thin film, the halogen atom loss of the thin film will produce Pb<2 +> and a recombination center is formed, so that the probability of carrier recombination is increased, the interface properties are improved, and the nano-scale phase separated aggregation structure is maintained; the charge transfer is accelerated and the conversion efficiency is improved in theprocess of photoelectric conversion. The invention solves the problems of low photoelectric conversion rate and poor stability of the conventional solar cell thin film.

Description

technical field [0001] The invention belongs to the field of solar cell materials, and relates to a preparation method of a solar cell thin film. Background technique [0002] With the shortage of energy and the aggravation of environmental problems worldwide, the research, development and utilization of solar-based renewable energy have been paid more and more attention. There are mainly two ways of solar power generation: solar thermal power generation and solar photovoltaic power generation. For solar thermal power generation systems, its core equipment includes concentrating heat collectors, mirror drives and tracking systems; the concentrating system includes heliostats and tracking devices, and the cost accounts for more than 50% of the total investment. Reflective materials in concentrating systems are widely used in solar energy medium and high temperature application systems and concentrating photovoltaic systems. Its quality directly determines the conversion effi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K85/00H10K30/00H10K2102/00Y02E10/549
Inventor 刘菊花路芸卢星
Owner FOSHAN TENGLI NEW ENERGY TECH CO LTD
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