Preparation method of Ta-C-N thin-film

Abstract

The invention relates to the technical field of thin-film preparation, particularly relates to a preparation method of a Ta-C-N thin-film, which comprises the following steps: performing surface activation on a monocrystalline silicon substrate by using a conventional process, separately placing a Ta target, a graphite target and the silicon substrate into a main sputtering chamber and a sample injection chamber, vacuumizing the sputtering chamber and the sample injection chamber, and pre-sputtering the Ta target and the graphite target to remove surface impurities; adjusting the ratio of nitrogen gas flow to argon gas flow (sccm) to 1:(10-100); adjusting the distance between the substrate and the targets to 5-10 centimeters; regulating the Ta target sputtering power to 80-150 W to do firing sputter, regulating the graphite target sputtering power to 100-200 W to do firing sputter, and producing the thin film by adopting simultaneous sputtering and layered sputtering process; and taking the test sample out from the main sputtering chamber to obtain the non-crystalline Ta-C-N ternary thin-film. The preparation method provided by the invention has the characteristics of simple process, short synthesis time, and on the like and is easy to implement.

Description

technical field [0001] The patent of the present invention relates to a preparation method of materials with three elements of Ta, C and N, specifically refers to the preparation of Ta-C-N thin films by DC and RF magnetron co-sputtering. Through the implementation of this method, Ta-C-N Thin films of ternary components. Background technique [0002] TaN thin films have been widely used in integrated circuits, barrier layers, and thin film resistors due to their high chemical stability, small temperature coefficient of resistance, and large adjustable range of resistance. At present, the preparation methods of TaN thin films mainly include ion beam deposition, chemical Vapor deposition and reactive magnetron sputtering, etc. [1] , compared with binary TaN thin films, research on ternary Ta-C-N thin films is relatively less. [0003] In the development of the electronics industry, with the increase of chip integration and the reduction of feature size, the interconnection de...

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Problems solved by technology

[0005]In addition, carbon / nitrides of subgroup IV and subgroup V elements have attracted much attention due to their unique physicochemical properties, such as high melting point, high hardness , excellent thermal and chemical stability, corrosion resistance and good electrical conductivity, etc.; Wang Guangfu and Zhang Huixing[8] used magnetic filter cathodic vacuum arc plasma deposition method in different N2 Under partial pressure, Ta-C(N) films were synthesized on Si substrates. XPS and Raman analysis showed that the N / The atomic ratio of C is between 0.098-0.31, and with the increase of nitrogen intake, the N content in the film increases, the proportion of sp3 bonds decreases, and the partial pressure of nitrogen is further increased. The deposition rate will be greatly reduced. In the synthesized amorphous carbon-nitrogen film, N is mainly combined with C atoms through N=C bonds.

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