Preparation method of Ta-C-N thin-film

A ta-c-n, thin film technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems of reducing the proportion of bonds, increasing the partial pressure of nitrogen, and reducing the deposition rate, etc., to reach the surface Smooth and dense, high nano-hardness, high sputtering deposition rate

Inactive Publication Date: 2011-07-20
JIANGSU UNIV
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  • Abstract
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Problems solved by technology

[0005]In addition, carbon/nitrides of subgroup IV and subgroup V elements have attracted much attention due to their unique physicochemical properties, such as high melting point, high hardness , excellent thermal and chemical stability, corrosion resistance and good electrical conductivity, etc.; Wang Guangfu and Zhang Huixing[8] used magnetic filter cathodic vacuum arc plasma deposition method in different N2 Under partial pressure, Ta-C(N)...

Method used

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  • Preparation method of Ta-C-N thin-film
  • Preparation method of Ta-C-N thin-film
  • Preparation method of Ta-C-N thin-film

Examples

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example 1

[0030] (1) Treatment of magnetron sputtering targets

[0031] Grind the surface of the commercially available Ta target and graphite target with sandpaper to remove possible impurities and oxides on the surface, wipe with alcohol and then dry;

[0032] (2) Surface activation treatment of single crystal Si substrate

[0033] Immerse the Si substrate in ethanol and ultrasonically clean it for 15 minutes; then soak it in a solution of hydrogen peroxide: concentrated sulfuric acid = 1:2 for 15 minutes; take it out and put it in a solution containing HF: deionized water = 1:10 for 30 seconds; The slices were blown dry with nitrogen;

[0034] (3) Magnetron sputtering process

[0035] Put the Ta target, graphite target and Si substrate into the main sputtering chamber and the sampling chamber respectively, and evacuate the main sputtering chamber and the sampling chamber to 1×10 -5 Pa;

[0036] The Ta target and the graphite target were pre-sputtered for 20 min to clean the impur...

example 2

[0038] (1) Treatment of magnetron sputtering targets

[0039] Grind the surface of the commercially available Ta target and graphite target with sandpaper to remove possible impurities and oxides on the surface, wipe with alcohol and then dry;

[0040] (2) Surface activation treatment of single crystal Si substrate

[0041] Immerse the Si substrate in ethanol and ultrasonically clean it for 15 minutes; then soak it in a solution of hydrogen peroxide: concentrated sulfuric acid = 1:2 for 15 minutes; take it out and put it in a solution containing HF: deionized water = 1:10 for 30 seconds; The slices were blown dry with nitrogen;

[0042] (3) Magnetron sputtering process

[0043] Put the tantalum target, graphite target and Si substrate into the main sputtering chamber and the sampling chamber respectively, and evacuate the main sputtering chamber and the sampling chamber to 1×10 -5 Pa;

[0044] The Ta target and the graphite target were pre-sputtered for 20 min to clean the...

example 3

[0046] (1) Treatment of magnetron sputtering targets

[0047] Grind the surface of the commercially available Ta target and graphite target with sandpaper to remove possible impurities and oxides on the surface, wipe with alcohol and then dry;

[0048] (2) Surface activation treatment of single crystal Si substrate

[0049] Immerse the Si substrate in ethanol and ultrasonically clean it for 15 minutes; then soak it in a solution of hydrogen peroxide: concentrated sulfuric acid = 1:2 for 15 minutes; take it out and put it in a solution containing HF: deionized water = 1:10 for 30 seconds; The slices were blown dry with nitrogen;

[0050] (3) Magnetron sputtering process

[0051] Put the tantalum target, graphite target and Si substrate into the main sputtering chamber and the sampling chamber respectively, and evacuate the main sputtering chamber and the sampling chamber to 1×10 -5 Pa;

[0052] Pre-sputter the tantalum target and the graphite target for 20 minutes to clean ...

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Abstract

The invention relates to the technical field of thin-film preparation, particularly relates to a preparation method of a Ta-C-N thin-film, which comprises the following steps: performing surface activation on a monocrystalline silicon substrate by using a conventional process, separately placing a Ta target, a graphite target and the silicon substrate into a main sputtering chamber and a sample injection chamber, vacuumizing the sputtering chamber and the sample injection chamber, and pre-sputtering the Ta target and the graphite target to remove surface impurities; adjusting the ratio of nitrogen gas flow to argon gas flow (sccm) to 1:(10-100); adjusting the distance between the substrate and the targets to 5-10 centimeters; regulating the Ta target sputtering power to 80-150 W to do firing sputter, regulating the graphite target sputtering power to 100-200 W to do firing sputter, and producing the thin film by adopting simultaneous sputtering and layered sputtering process; and taking the test sample out from the main sputtering chamber to obtain the non-crystalline Ta-C-N ternary thin-film. The preparation method provided by the invention has the characteristics of simple process, short synthesis time, and on the like and is easy to implement.

Description

technical field [0001] The patent of the present invention relates to a preparation method of materials with three elements of Ta, C and N, specifically refers to the preparation of Ta-C-N thin films by DC and RF magnetron co-sputtering. Through the implementation of this method, Ta-C-N Thin films of ternary components. Background technique [0002] TaN thin films have been widely used in integrated circuits, barrier layers, and thin film resistors due to their high chemical stability, small temperature coefficient of resistance, and large adjustable range of resistance. At present, the preparation methods of TaN thin films mainly include ion beam deposition, chemical Vapor deposition and reactive magnetron sputtering, etc. [1] , compared with binary TaN thin films, research on ternary Ta-C-N thin films is relatively less. [0003] In the development of the electronics industry, with the increase of chip integration and the reduction of feature size, the interconnection de...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06C23C14/02
Inventor 严学华尹君程晓农
Owner JIANGSU UNIV
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