Method for continuously preparing two-sided texture high-temperature superconduction bibasic strip transition layer
A high-temperature superconducting and transition layer technology, applied in the usage of superconducting elements, superconducting devices, superconducting/high-conducting conductors, etc., can solve the problems of lack, the large-scale application of strip preparation technology is restricted, and achieve smooth surface. , to ensure double-sided consistency and single-sided uniformity, and the effect of high preparation efficiency
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
specific Embodiment approach
[0032] A kind of specific embodiment of the present invention is:
[0033] A method for preparing a transition layer of a double-sided high-temperature superconducting tape by chemical solution deposition, which consists of the following steps in sequence:
[0034] a, preparation of precursor solution: dissolving cerous nitrate in N,N-dimethylformamide (DMF) to form a precursor solution (that is, the ion ratio of rare earth ion and cerium in this example is 0:1);
[0035] b. Colloid preparation: add polyacrylic acid (PAA) to the precursor solution of step a to form a colloid with good film-forming properties;
[0036] c. Film preparation and drying: the Ni alloy base tape is wound through the colloid obtained in step b (that is, a runner is set in the colloid, and the base tape walks around the runner from below, and the tape-out end and the tape-feed end are all in the colloid. above the colloid), at the end of the tape, the tape is pulled out vertically at a pulling speed o...
Embodiment 2
[0040] The preparation method of this example consists of the following steps in turn:
[0041] a. Preparation of precursor solution: Dissolve samarium nitrate and cerous nitrate in N,N-dimethylformamide (DMF) according to the ratio of cation ratio Sm:Ce=0.2:0.8 to form a precursor solution; that is, this example The doping element M used in is samarium Sm, and the final M x Ce 1-x o y x in the transition layer is equal to 0.2, and y is equal to 1.9, that is, the material of the transition layer made in this example is specifically Sm 0.2 Ce 0.8 o 1.9 ;
[0042] b. Colloid preparation: add polyacrylic acid (PAA) to the precursor solution of step a to form a colloid with good film-forming properties;
[0043] c. Film preparation and drying: wind the Ni alloy base tape into the colloid prepared in step b, and take out the tape vertically at the end of the strip at a pulling speed of 100mm / min, and make the Ni alloy base tape pass through the colloid for 10 seconds , after...
Embodiment 3
[0047] The preparation method of this example consists of the following steps in turn:
[0048] a. Preparation of precursor solution: Dissolve gadolinium nitrate and cerous nitrate in N,N-dimethylformamide (DMF) according to the ratio of cation ratio Gd:Ce=0.5:0.5 to form a precursor solution; that is, this example The doping element M used in is gadolinium Gd, and the final M x Ce 1-x o y x in the transition layer is equal to 0.5, and y is equal to 1.75, that is, the material of the transition layer prepared in this example is specifically Gd 0.5 Ce 0.5 o 1.75 ;
[0049] b. Colloid preparation: add polyacrylic acid (PAA) to the precursor solution of step a to form a colloid with good film-forming properties;
[0050] c. Film preparation and drying: wind the Ni alloy base tape into the colloid prepared in step b, and take out the tape vertically at the pulling speed of 50mm / min at the end of the tape, and make the Ni alloy base tape pass through the colloid for 20 second...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com