A kind of La-doped CeO2 transition layer thin film and preparation method thereof

A technology of transition layer and thin film, which is applied in the field of high-temperature superconducting material preparation, and achieves the effects of simple preparation process, precise and adjustable lattice constant, and low preparation cost

Inactive Publication Date: 2011-12-07
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problems existing in the preparation process of the existing coated conductor transition layer, and to provide a La-doped CeO with simple process, high efficiency and low cost. 2 Single transition layer thin film and preparation method thereof

Method used

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  • A kind of La-doped CeO2 transition layer thin film and preparation method thereof
  • A kind of La-doped CeO2 transition layer thin film and preparation method thereof
  • A kind of La-doped CeO2 transition layer thin film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0032] 1) Add 0.0144mol of cerium acetate and 0.0016mol of lanthanum acetylacetonate to a mixed solution of 28ml of n-propionic acid and 12ml of acetylacetone, heat and stir until dissolved to obtain Ce 3+ with La 3+ The total concentration is 0.4mol / L, Ce 3+ : La 3+ 9:1 ​​precursor solution;

[0033] 2) The metal-textured NiW alloy base tape is ultrasonically cleaned with acetone and methanol in sequence, and after drying, the precursor liquid is dropped onto the metal NiW alloy base tape, and spin-coated by a spin-coating machine. The rotation speed of the spin-coating is 5000rpm. The spin time is 30 seconds to obtain the precursor film;

[0034] 3) Place the precursor film in a tube furnace, and inject H 2 Under gas conditions, sintering at 1200°C for 15 minutes to obtain 60nm thick Ce 0.9 La 0.1 o 2 Single-layer transition layer film;

[0035] 4) Repeat the process of step 2) coating and step 3) sintering once to obtain 120nm thick Ce 0.9 La 0.1 o 2 Two layers o...

Embodiment 2

[0040] 1) Add 0.0144mol of cerium acetylacetonate and 0.0016mol of lanthanum acetylacetonate into a mixed solution of 39ml of n-propionic acid and 1ml of methanol, heat and stir until dissolved to obtain Ce 3+ with La 3+ The total concentration is 0.4mol / L, Ce 3+ : La 3+ 9:1 ​​precursor solution;

[0041] 2) The metal-textured NiW alloy base tape is ultrasonically cleaned with acetone and methanol in sequence, and after drying, the precursor liquid is dropped onto the metal NiW alloy base tape, and spin-coated by a spin-coating machine. The rotation speed of the spin-coating is 2000rpm. The spin time is 120 seconds to obtain the precursor film;

[0042] 3) Place the precursor film in a tube furnace and sinter at 950°C for 60 minutes under the condition of flowing Ar gas to obtain a 50nm thick Ce 0.9 La 0.1 o 2 Single-layer transition layer film;

[0043] 4) Repeat the process of step 2) coating and step 3) sintering 4 times to obtain 250nm thick Ce 0.9 La 0.1 o 2 Fiv...

Embodiment 3

[0045] 1) Add 0.0032mol of cerium acetylacetonate and 0.0008mol of lanthanum acetylacetonate into a mixed solution of 30ml of n-propionic acid and 10ml of methanol, heat and stir until dissolved, and obtain Ce 3+ with La 3+ The total concentration is 0.1mol / L, Ce 3+ : La 3+ 8:2 precursor solution;

[0046] 2) The metal-textured NiW alloy base tape is ultrasonically cleaned with acetone and methanol in sequence, and after drying, the precursor liquid is dropped onto the metal NiW alloy base tape, and spin-coated by a spin-coating machine. The rotation speed of the spin-coating is 3000rpm. The spin time is 60 seconds to obtain the precursor film;

[0047] 3) Place the precursor film in a tube furnace, and inject Ar and H 2 Mixed gas (Ar and H 2 The volume fractions are 96% and 4%, respectively) and sintered at 950°C for 120 minutes to obtain 10nm thick Ce 0.8 La 0.2 o 2 Single-layer transition layer film;

[0048] 4) Repeat step 2) coating and step 3) sintering process ...

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Abstract

A La-doped CeO2 transition layer film and a preparation method thereof belong to the technical field of preparation of high-temperature superconducting materials. The La-doped CeO2 transition layer film provided by the present invention is composed of Ce1-xLaxO2 composite oxide solid solution, wherein, 0.1≤x≤0.3; the thickness of the transition layer film is 30-250nm. In the present invention, the organic cerium salt is used as the precursor salt, lanthanum acetylacetonate is used as the lanthanum source, and after the chemical solution method is used to prepare the precursor solution, the precursor solution is coated on the metal substrate by spin coating or dip coating, and then the heat treatment process is carried out. The La-doped CeO2 transition layer film was prepared. The invention has the advantages of low preparation cost, precise and adjustable lattice constant of the Ce1-xLaxO2 transition layer film, and can realize the integration of various transition layer functions, reduce the existing complex transition layer structure, and the like.

Description

technical field [0001] The invention belongs to the technical field of high-temperature superconducting material preparation, and in particular relates to the preparation technology of a high-temperature superconducting coating conductor transition layer. Background technique [0002] Due to the strong anisotropy of the high-temperature superconducting material YBCO, its current-carrying capacity is extremely sensitive to lattice mismatch, and a large lattice mismatch angle will form weak connections, seriously affecting its superconducting performance. Therefore, adopting the idea of ​​"epitaxy texture" and corresponding technical means is an indispensable process in its preparation technology. [0003] It is an important link to realize its practical application to make YBCO, a high-temperature superconducting material with ceramic brittleness, into wires and strips. In recent years, people have made great progress in the preparation of high-temperature superconducting lo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L39/24C04B35/50C04B35/622
Inventor 赵跃索红莉刘敏叶帅程艳玲马麟周美玲
Owner BEIJING UNIV OF TECH
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