The invention provides a method for preparing high-quality
bismuth ferrite (BFO) ferroelectric photovoltaic films. The method comprises the specific steps of adopting BFO
ceramic targets mixed with
lanthanide, placing a cleaned FTO / glass substrate into a
vacuum chamber, and adjusting the distance between a sample stage and a target stage to be 50-150 mm; introducing O2 and Ar according to the gasflow ratio O2 / Ar of 1 / 10-1 / 4 when the background vacuum degree is higher than 8x10<-4> Pa, making the
working pressure reach 1-10 Pa, setting the power of a
radio frequency power supply to be 10-100 W, the rotation speed of the sample stage to be 5-15 rpm, and the pre-
sputtering time to be 5-15 min separately, and setting the
sputtering time according to the thickness of the BFO film; and continuously introducing Ar insert protective gas upon completion of
sputtering for in-situ annealing treatment to the BFO film, wherein the
heating temperature is 300-600 DEG C, and the
holding time is 30-180 min. The method provided by the invention is a
physical vapor deposition method, and the BFO ferroelectric photovoltaic films are prepared by a conventional magnetron sputtering
system, and are highin technological
controllability and applicability, and easy to produce on a large scale; and a new way is opened up for development of solar cells based on the BFO ferroelectric photovoltaic films.