Preparing method of rare earth doped aluminum nitride base green fluorescent powder

Abstract

The invention provides a preparing method of rare earth doped aluminum nitride base green fluorescent powder. The method includes the following steps of S1, adding a certain amount of aluminum powder,magnesium powder, ammonium chloride and TbCl3.6H2O solid into a mortar to be ground and evenly mixed; S2, adding the ground powder into a muffle furnace for sintering reaction, raising the temperature to 800-1200 DEG C at the temperature raising rate of 5 DEG C / min, and then conducting sintering for 2-5 hours to obtain the terbium doped aluminum nitride base fluorescent powder. The method is simple in preparing process; by adding the magnesium powder and ammonium chloride as catalysts, the nitriding rate of the product is increased; by doping the green fluorescent powder with rare earth Tb, nitriding can be realized at a low temperature, the carbonizing effect is good, the preparing process is high in controllability and convenient to implement, and production cost is further reduced; thegreen fluorescent powder has the advantages of being low in nitriding temperature, good in performance, high in purity, small in grain size and uniform in granularity and has the characteristic of the green fluorescent property.

Description

technical field [0001] The invention relates to the field of luminescent materials, in particular to a preparation method of rare earth-doped aluminum nitride-based green fluorescent powder. Background technique [0002] At present, there are two main ways to realize white LED, one is multi-chip light emission, and the other is single chip + phosphor light emission. Multi-chip lighting has problems such as high cost, different luminous efficiency of each chip, and poor heat dissipation. At present, the mainstream is still the white light implementation method of single chip + phosphor. Phosphor plays a pivotal role in white LEDs, and its luminous performance, luminous properties and stability directly determine the performance of LED devices. Doped AlN phosphors are widely used in the LED field because of their wide energy band gap (6.2ev), high chemical stability and thermal stability, etc. [0003] AIN is a III-V semiconductor covalent bond compound, which has comprehens...

AI Technical Summary

Problems solved by technology

Eu 2+ , Tb 3+ and Ce 3+ Plasma-doped AlN phosphors generally have problems such as low doping amount (≤0.2mol%) and high reaction temperature (≥1500°C). Due to the above-mentioned methods, there are problems such as high reaction temperature, long holding time, and complicated equipment required. Lead to high production costs and low efficiency

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