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A kind of preparation method of nitride powder

A technology of nitrides and powders, which is applied in the field of preparation of nitrides powders, can solve the problems of difficulty in the reaction between nitrogen and aluminum elements, hindering the penetration of nitrogen into the interface, and high nitriding temperature, so as to shorten the nitriding reaction time and improve the production The effect of high speed and high purity

Active Publication Date: 2022-05-03
ANHUI ESTONE MATERIAL TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, during the nitriding process, the nitriding layer formed on the surface prevents nitrogen from penetrating the interface from the outside to the inside, making it difficult for nitrogen to react with aluminum, so the reaction time is longer and the nitriding temperature is higher
[0004] After searching, the Chinese patent with application number 201910488968.6 announced a method for preparing high-purity aluminum nitride powder. This method uses aluminum oxide and carbon powder of different particle sizes to mix aluminum nitride at high temperature in a nitrogen atmosphere. Roasting preparation, by increasing the gap between powders, promotes the contact between nitrogen and alumina, but this improved method still cannot avoid the obstruction of the nitride layer, and it still takes a long time, 8-15 hours

Method used

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  • A kind of preparation method of nitride powder
  • A kind of preparation method of nitride powder
  • A kind of preparation method of nitride powder

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Experimental program
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Effect test

Embodiment 1

[0044] (1) 10g of aluminum sol, 250g of anionic water-based polyurethane, mixed evenly to form a homogeneous mixture. Put the mixed solution in an oven to heat and cure, the curing temperature is 250°C. After solidification, the mixture is pulverized by ball milling to obtain a uniform mixed powder, which is placed in a high-temperature graphite furnace. Flowing nitrogen gas is introduced into the high-temperature graphite furnace to exhaust the air in the furnace, and the nitrogen flow rate is 4L / min. The high-temperature graphite furnace is heated up from room temperature to 1600°C in 5.5 hours, and kept at 1600°C for 4 hours.

[0045] (2) The nitriding product is decarburized at 600° C. in the air environment, and the decarburization time is 2 hours.

[0046] The product aluminum nitride powder is analyzed by XRD, and the product has no other phase diffraction peaks, and is a pure aluminum nitride product. The oxygen content of aluminum nitride is 0.6% as tested by nitro...

Embodiment 2

[0048] (1) 10g of aluminum sol, 200g of anionic water-based polyurethane, mixed evenly to form a homogeneous mixture. Put the mixed solution in an oven to heat and cure, the curing temperature is 200°C. After solidification, the mixture is pulverized by ball milling to obtain a uniform mixed powder, which is placed in a high-temperature graphite furnace. Flowing nitrogen gas is introduced into the high-temperature graphite furnace to exhaust the air in the furnace, and the nitrogen flow rate is 4L / min. The high-temperature graphite furnace is heated up from room temperature to 1600°C in 5.5 hours, and kept at 1600°C for 3 hours.

[0049] (2) The nitriding product is decarburized at 600° C. in the air environment, and the decarburization time is 2 hours.

[0050] The product aluminum nitride powder is analyzed by XRD, and the product has no other phase diffraction peaks, and is a pure aluminum nitride product. The oxygen content in aluminum nitride is 0.7% as tested by a nit...

Embodiment 3

[0052] (1) 10g of aluminum sol and 180g of anionic water-based polyurethane were uniformly mixed to form a homogeneous mixture. Put the mixed solution in an oven to heat and cure, the curing temperature is 200°C. After solidification, the mixture is pulverized by ball milling to obtain a uniform mixed powder, which is placed in a high-temperature graphite furnace. Flowing nitrogen gas is introduced into the high-temperature graphite furnace to exhaust the air in the furnace, and the nitrogen flow rate is 3L / min. The high-temperature graphite furnace is heated up from room temperature to 1500°C in 5 hours, and kept at 1500°C for 2 hours.

[0053] (2) The nitriding product is decarburized at 600° C. in the air environment, and the decarburization time is 2 hours.

[0054] The product aluminum nitride powder is analyzed by XRD, and it can be seen that the product has no other phase diffraction peaks, and is a pure aluminum nitride product. After testing, the oxygen content of ...

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Abstract

The invention discloses a method for preparing nitride powder, which relates to the technical field of heat-conducting inorganic powder, and comprises the following steps: (1) preparation of a precursor; (2) decarburization treatment. The present invention utilizes nitrogen-containing resin and aluminum sol or silica sol to form intermolecular contact, nitrogen element can directly realize contact reaction with aluminum element or silicon element, improve the production rate of aluminum nitride or silicon nitride, shorten the reaction time, and produce Silicon nitride powder or silicon nitride powder or a composite powder of the two is obtained.

Description

Technical field: [0001] The invention relates to the technical field of heat-conducting inorganic powders, in particular to a method for preparing nitride powders. Background technique: [0002] Nitrogen has a high electronegativity and can form a series of nitrides with many elements with lower electronegativity than it. Nitride powder is widely used in cutting processing materials, high-temperature structural materials, luminescent materials, electrode materials, catalytic materials, superconducting materials, wave-absorbing materials, adsorption materials and other fields. Among them, aluminum nitride has good chemical and thermal stability, high thermal conductivity (theoretical value 320W / mK), high mechanical strength, thermal expansion coefficient close to that of silicon, easy compatibility with other semiconductor materials, and extremely low Its insulation and other advantages have important applications in the field of heat dissipation of electronic components and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B21/072
CPCC01B21/072C01P2002/72C01P2006/80
Inventor 尤勇颜和祥秦永法张轲轲蒋学鑫王韶晖
Owner ANHUI ESTONE MATERIAL TECH CO LTD
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