Method for preparing high-quality bismuth ferrite ferroelectric photovoltaic films by magnetron sputtering

A magnetron sputtering, ferroelectric photovoltaic technology, applied in sputtering coating, ion implantation coating, metal material coating process and other directions, can solve the problem of low equipment condition efficiency, reduce leakage current, obvious photovoltaic effect , The effect of strong controllability of the preparation process

Inactive Publication Date: 2018-05-29
YUNNAN NORMAL UNIV
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Problems solved by technology

In order to realize the solar cell application of BFO ferroelectric thin film, the premise is to prepare high-quality BFO thin film. Usually, pulsed laser deposition or other epitaxial growth methods are used. There are problems such as high equipment requirements and low efficiency, and it is not convenient to produce BFO ferroelectric thin film. Electrode thin films are used in other solar cell (such as silicon-based, CdTe, CuInGaSe, etc.) technologies

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  • Method for preparing high-quality bismuth ferrite ferroelectric photovoltaic films by magnetron sputtering
  • Method for preparing high-quality bismuth ferrite ferroelectric photovoltaic films by magnetron sputtering
  • Method for preparing high-quality bismuth ferrite ferroelectric photovoltaic films by magnetron sputtering

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Embodiment Construction

[0021] The technical solutions of the present invention and the beneficial effects that can be obtained are described in detail below using examples.

[0022] (1) The bismuth ferrite (BFO) ceramic target doped with dysprosium (Dy) is used as the sputtering target, and the relative atomic percentage content [Dy / (Dy+Bi)]×100%=10%, the sputtering target Fix it on the RF sputtering target platform; use FTO / glass as the substrate, clean the substrate with propanol, absolute ethanol, and deionized water in an ultrasonic cleaner for 10 minutes, then blow dry with nitrogen and immediately put it into a vacuum chamber The chamber is fixed on the sample stage, and the distance between the sample stage and the target stage is adjusted to 120mm;

[0023] (2) Use a mechanical pump and a molecular pump to evacuate the vacuum chamber to 5.0×10 -4 Pa, then open the throttle valve of the exhaust system, according to the gas flow ratio O 2 : Ar=1:5 into O 2 and Ar gas; set the gas flow, wher...

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Abstract

The invention provides a method for preparing high-quality bismuth ferrite (BFO) ferroelectric photovoltaic films. The method comprises the specific steps of adopting BFO ceramic targets mixed with lanthanide, placing a cleaned FTO / glass substrate into a vacuum chamber, and adjusting the distance between a sample stage and a target stage to be 50-150 mm; introducing O2 and Ar according to the gasflow ratio O2 / Ar of 1 / 10-1 / 4 when the background vacuum degree is higher than 8x10<-4> Pa, making the working pressure reach 1-10 Pa, setting the power of a radio frequency power supply to be 10-100 W, the rotation speed of the sample stage to be 5-15 rpm, and the pre-sputtering time to be 5-15 min separately, and setting the sputtering time according to the thickness of the BFO film; and continuously introducing Ar insert protective gas upon completion of sputtering for in-situ annealing treatment to the BFO film, wherein the heating temperature is 300-600 DEG C, and the holding time is 30-180 min. The method provided by the invention is a physical vapor deposition method, and the BFO ferroelectric photovoltaic films are prepared by a conventional magnetron sputtering system, and are highin technological controllability and applicability, and easy to produce on a large scale; and a new way is opened up for development of solar cells based on the BFO ferroelectric photovoltaic films.

Description

technical field [0001] The invention relates to a method for preparing a bismuth ferrite ferroelectric photovoltaic thin film by using a magnetron sputtering coating system. The method adopts magnetron sputtering deposition, which is a physical vapor deposition method, to prepare a bismuth ferrite ferroelectric thin film with dense and smooth surface, good crystallization performance and obvious photovoltaic effect, belonging to the field of photovoltaic materials and technology. Background technique [0002] In recent years, with the increasingly serious energy crisis and environmental deterioration, the development of renewable green energy has become a common concern of the whole society. In order to realize the economical and large-scale application of solar power generation, it is imminent to explore and develop low-cost, high-efficiency solar cells. Recently, the photovoltaic effect of ferroelectric materials has stimulated research interest. In ferroelectrics, the e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/35C23C14/085C23C14/086
Inventor 莫镜辉杨雯杨培志刘黎明李学铭
Owner YUNNAN NORMAL UNIV
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