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Flexible solar blind ultraviolet detector based on TiO2/Ga2O3 nano-phase junction and preparation method of flexible solar blind ultraviolet detector

A technology of ultraviolet detector and nano phase, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, and can solve the problems of limiting the application range of devices, weak bonding of substrates, and difficulty in making electrodes. , achieve the effect of stable solar blindness, excellent chemical and thermal stability, and easy processing

Pending Publication Date: 2021-04-09
杭州紫芯光电有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Flexible optoelectronic products are elastic and have a certain curvature surface, while gallium oxide-based photodetection devices are usually grown on rigid substrates such as silicon wafers, sapphire and quartz substrates. Films or nanomaterials, these devices cannot be bent, limiting the device scope of application
Although it has been reported in the literature that an amorphous gallium oxide film has been grown on a PEN polymer flexible substrate, and a flexible solar-blind ultraviolet detector has been fabricated, and most of the current flexible substrates are polymer compounds, which cannot withstand high temperatures. Therefore, choosing a high-temperature-resistant flexible substrate to prepare single-crystal or polycrystalline gallium oxide materials is the key to realizing high-performance gallium oxide-based flexible ultraviolet photodetection devices.
[0005] So far, related experiments (patent number: 201710012296.2) have been reported on solar-blind ultraviolet photodetectors based on flexible gallium oxide nanobelts, but this type of detector is to transfer the synthesized gallium oxide nanobelts to a flexible substrate. It has the disadvantages of weak bonding with the substrate, poor stability and difficulty in making electrodes.

Method used

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  • Flexible solar blind ultraviolet detector based on TiO2/Ga2O3 nano-phase junction and preparation method of flexible solar blind ultraviolet detector
  • Flexible solar blind ultraviolet detector based on TiO2/Ga2O3 nano-phase junction and preparation method of flexible solar blind ultraviolet detector
  • Flexible solar blind ultraviolet detector based on TiO2/Ga2O3 nano-phase junction and preparation method of flexible solar blind ultraviolet detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Based on TiO 2 / Ga 2 o 3 The preparation method of the flexible sun-blind ultraviolet detector of nanometer junction, comprises the following steps:

[0036] (1) Soak the flexible titanium sheet substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and dry it with dry nitrogen; put the cleaned metal titanium sheet into oxygen In the plasma, the surface of metal titanium is oxidized to form a dense layer of TiO 2 layer, namely to obtain TiO 2 / Ti sheet substrate; (2) get 30mL concentration and be that the gallium isopropoxide solution of 0.5mol / L is placed in the reactor liner, then the TiO of step (1) gained 2 / Ti sheet substrate is leaned against the reactor liner and immersed in gallium isopropoxide solution, in which TiO 2 This side is facing down (that is, toward the side of the reactor liner leaning against); (3) Transfer the reactor to an oven, react at 150°C for 6h, then take out the sample...

Embodiment 2

[0046] Steps (1), (4) and (5) are all the same as in Example 1. The concentration of gallium isopropoxide solution in step (2) is 0.5mol / L. In step (3), react at 150°C for 7h, hydrothermally grow gallium oxyhydroxide, and then transfer GaOOH to a high-temperature furnace for annealing, first at 400°C Annealed for 1.5 hours to obtain TiO 2 / α-Ga 2 o 3 nanopillar array, and then the high-temperature furnace was rapidly heated to 700 ° C, and continued annealing for 20 minutes to obtain TiO 2 / α / β-Ga 2 o 3 Junction nanopillar arrays. The resulting TiO 2 / α / β-Ga 2 o 3 Crystal structure, chemical composition and TiO-based 2 / Ga 2 o 3 The photoelectric properties of the flexible solar-blind ultraviolet detectors with nanostructures are similar to those of Example 1.

Embodiment 3

[0048] Steps (1), (4) and (5) are all the same as in Example 1. The concentration of gallium isopropoxide solution in step (2) is 1.0 mol / L. In step (3), react at 150°C for 8 hours to hydrothermally grow gallium oxyhydroxide, then transfer GaOOH to a high-temperature furnace for annealing, first at 500°C Annealed for 2.0 hours to obtain TiO 2 / α-Ga 2 o 3 nanopillar array, and then the high-temperature furnace was rapidly heated to 800 ° C, and continued annealing for 10 minutes to obtain TiO 2 / α / β-Ga 2 o 3 Junction nanopillar arrays. The resulting TiO 2 / α / β-Ga 2 o 3 Crystal structure, chemical composition and TiO-based 2 / Ga 2 o 3 The photoelectric properties of the flexible solar-blind ultraviolet detectors with nanostructures are similar to those of Example 1.

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Abstract

The invention relates to a flexible solar blind ultraviolet detector based on a TiO2 / Ga2O3 nano-phase junction and a preparation method thereof, the detector comprises an Ag upper electrode, a flexible titanium sheet lower electrode, a TiO2 / alpha / beta-Ga2O3 nano-phase junction nanorod array located between the Ag upper electrode and the flexible titanium sheet lower electrode, and a graphene / Ag nanowire composite electrode, wherein a flexible titanium sheet is used as a flexible titanium sheet substrate, the TiO2 / alpha / beta-Ga2O3 phase junction nanorod array comprises a TiO2 layer located on the flexible titanium sheet substrate and an alpha / beta-Ga2O3 phase junction nanorod array located on the TiO2 layer, and the alpha / beta-Ga2O3 phase junction nanorod array comprises a plurality of alpha / beta-Ga2O3 phase junction nanorods arranged at intervals; the graphene / Ag nanowire composite electrode is located at one end, deviating from the TiO2 layer, of the alpha / beta-Ga2O3 phase junction nanorod, and the Ag upper electrode partially covers the graphene / Ag nanowire composite electrode. The solar blind ultraviolet detector with the multi-heterojunction structure is stable in solar blind characteristic, has excellent chemical and thermal stability, and is expected to be widely applied to the field of wearable and convenient ultraviolet detectors.

Description

technical field [0001] The invention belongs to the technical field of ultraviolet photodetectors, in particular to a TiO-based 2 / Ga 2 o 3 A nano-junction flexible solar-blind ultraviolet detector and a preparation method thereof. [0002] technical background [0003] In recent years, in order to realize wearable photodetectors, the design and fabrication of flexible photodetectors has attracted extensive attention of researchers. The rapid development of flexible photodetection technology requires higher and higher sensitivity and flexibility of photosensitive materials. One-dimensional inorganic nanomaterials have the characteristics of high aspect ratio, fast electron transport speed and anisotropy. Excellent photoelectric properties. At the same time, under the action of external force, the linear geometric structure has good elasticity, and when the material is deformed, there will be no cracks on the surface. These characteristics make one-dimensional inorganic ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/032H01L31/0352H01L31/036H01L31/0392H01L31/109H01L31/18B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L31/022408H01L31/032H01L31/035227H01L31/035281H01L31/036H01L31/0392H01L31/03926H01L31/109H01L31/18Y02E10/50Y02P70/50
Inventor 王顺利陶江伟张丽滢徐金阳郭道友常裕鑫
Owner 杭州紫芯光电有限公司
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