Preparation method of copper antimony sulfur film material

A thin film material, copper antimony sulfur technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of difficult control of composition, poor uniformity, many surface defects, etc., and achieve excellent crystallization, No special requirements, full effect of vulcanization

Active Publication Date: 2018-03-23
CENT SOUTH UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The main purpose of the present invention is to provide a method for preparing copper-antimony-sulfur thin film materials, aiming to solve the problems of difficult control of components, poor uniformity, many surface defects and easy Technical problems that produce unfavorable impurity phases

Method used

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  • Preparation method of copper antimony sulfur film material
  • Preparation method of copper antimony sulfur film material
  • Preparation method of copper antimony sulfur film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Step 100, depositing copper, antimony and sulfur on the pretreated soda lime glass to form a Cu—Sb—S prefabricated layer.

[0041] Specifically, the deposition method is the radio frequency magnetron sputtering method, and the Cu-Sb-S prefabricated layer is deposited by double-target reactive co-sputtering, wherein the process parameters are: argon gas flow rate 10 sccm, hydrogen sulfide gas flow rate 5 sccm, during sputtering The pressure in the sputtering chamber is 1.2Pa, the distance between the target and the soda-lime glass is 6cm, the cathode target is copper target and antimony target, and the sputtering power density of the copper target is 5W / cm 2, the sputtering power density of antimony target is 2W / cm 2 , the temperature of soda-lime glass is 200°C, the reaction time is 200min, and the rotation speed is 15r / min. It should be noted that when the Cu-Sb-S prefabricated layer is deposited by co-sputtering, the copper source can also be selected from: CuSb X T...

Embodiment 2

[0050] Step 101 , depositing copper, antimony and sulfur on the pretreated soda lime glass to form a Cu—Sb—S prefabricated layer.

[0051] Specifically, the deposition method is the radio frequency magnetron sputtering method, and the Cu-Sb-S prefabricated layer is deposited by double-target reactive co-sputtering, wherein the process parameters are: argon gas flow rate 50 sccm, hydrogen sulfide gas flow rate 25 sccm, during sputtering The pressure in the sputtering chamber is 1.5 Pa, the distance between the target and the soda-lime glass is 8 cm, and the cathode target is Cu 2 S target and Sb 2 S 3 Target, Cu 2 The sputtering power density of the S target is 80W / cm 2 , Sb 2 S 3 The sputtering power density of the target is 68W / cm 2 , the temperature of soda-lime glass is 300°C, the reaction time is 10min, and it is rotated at a speed of 150r / min.

[0052] Step 201, placing the Cu—Sb—S prefabricated layer in a sulfur-containing atmosphere for high-temperature annealing...

Embodiment 3

[0058] Step 102, depositing copper, antimony and sulfur on the pretreated soda lime glass to form a Cu—Sb—S prefabricated layer.

[0059] Specifically, DC sputtering is used for copper, radio frequency sputtering is used for antimony, and the deposition method is double-target reactive co-sputtering to deposit prefabricated layers. The process parameters are: argon gas flow rate 80 sccm, hydrogen sulfide gas flow rate 900 sccm, The pressure in the injection chamber is 12 Pa, the distance between the target and the soda-lime glass is 16cm, and the cathode target is CuSbS 2 target and CuSb alloy target, CuSbS 2 The sputtering power density of the target is 5W / cm 2 , the sputtering power density of the CuSb alloy target is 5W / cm 2 , the temperature of soda-lime glass is 300°C, the reaction time is 200min, and it is rotated at a speed of 180r / min.

[0060] Step 202, placing the Cu—Sb—S prefabricated layer in a sulfur-containing atmosphere for high temperature annealing treatmen...

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Abstract

The invention discloses a preparation method of a copper antimony sulfur film material. The preparation method of the copper antimony sulfur film material comprises the following steps: the surface ofa substrate is cleaned; the co-sputtering deposition of a Cu-Sb-S prefabricated layer is performed on the cleaned surface of the substrate through a radio-frequency or direct-current reaction; the substrate deposited with the Cu-Sb-S prefabricated layer on the surface is put in a reactive atmosphere for high-temperature annealing treatment; and the surface of the Cu-Sb-S prefabricated layer afterhigh-temperature annealing treatment is etched to obtain the copper antimony sulfur film material. The preparation method of the copper antimony sulfur film material has the advantages of low cost, easy control and adjustment of film components, good reproducibility, large-area growth of films and the like; and the prepared films achieve excellent component controllability and uniformity and excellent crystallization quality and properties.

Description

technical field [0001] The invention relates to the technical field of photoelectric materials, in particular to a preparation method of a copper antimony sulfur thin film material. Background technique [0002] The current global energy crisis and air pollution problems are becoming more and more prominent, and the whole world is turning its attention to renewable energy, among which solar energy has become the focus of people's attention due to its unique advantages. Abundant solar radiation energy is an important energy source, inexhaustible and inexhaustible, and it is an energy source that human beings can use freely. There are three main ways to use solar energy directly: photothermal conversion, photochemical conversion and photoelectric conversion. Solar water heating system is a typical application of light-to-heat conversion and has been widely used at present. Photochemical conversion is basically in the laboratory stage, and the typical one is photochemical hyd...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/06C23C14/58
CPCC23C14/0057C23C14/0623C23C14/3464C23C14/5806C23C14/5846C23C14/5866C23C14/5873
Inventor 刘芳洋康亮亮陈珠蒋良兴狄云翔陈建宇
Owner CENT SOUTH UNIV
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