The invention discloses an
oxide semiconductor plane p / n
superstructure and a preparation method thereof. According to the method, a latticed
mask is formed on the surface of an
oxide thin film based on a photoetching process, O2
atmosphere annealing (100-300 DEG C, 15-40 min) is combined, the local
oxygen vacancy concentration of a
mask covering area and an exposed area is precisely regulated and controlled, and precise in-situ conversion of a p type (
oxygen-rich area) and an n type (
oxygen-poor area) in a homogeneous material is achieved. The planar p / n
superstructure breaks through the strict limitation of a traditional vertical multi-junction structure on material
doping and interface quality, the width of a
depletion region is expanded to the micron order through the p / n
homojunction arrays alternately distributed in the plane, and the bulk recombination effect of
photon-generated carriers is remarkably inhibited. According to the method, an innovative technical
route of photoetching-assisted in-situ construction of the planar multi-junction photoelectrode is created, the method has the advantages of interface atomic-scale lattice matching, simple process, high compatibility, accurate and controllable
space charge distribution and the like, and a technical foundation is laid for non-assisted
solar water decomposition, research and development of self-driven optoelectronic devices and the like.