4results about How to "High surface" patented technology

The invention discloses a preparation method of a high-precision ultra-wide 50 steel cold-rolled steel strip, and belongs to the technical field of ferrous metallurgy. In the production process of the steel strip, the surface quality of the pickled steel strip is improved by optimizing the pickling process; the total reduction rate of cold rolling is adjusted, the problem of steel strip rolling edge cracking is eliminated, and a product is rolled to the target thickness; a process lubricating system of the rolling mill is optimized, so that the surface quality and the plate shape quality of a product are improved; and the annealing process parameters are optimized, so that the physical properties of the product are ensured. The high-precision ultra-wide 50 steel cold-rolled steel strip is successfully developed by adopting the measures of optimizing chemical components and physical properties of a cold-rolled base material, optimizing an acid pickling process, adjusting the total reduction rate of cold rolling, optimizing a rolling mill process lubricating system and annealing process parameters and the like; the problems that in the using process of a traditional steel belt, the thickness fluctuation is large, the plate shape quality is poor, and the surface quality is poor are solved.

This invention discloses a low-cost rare earth weathering steel and its production process. The chemical composition and mass percentage of the weathering steel are as follows: C 0.06%~0.12%, Si 0.25%~0.50%, Mn 0.60%~1.00%, P 0.07%~0.12%, S≤0.005%, Cu 0.15%~0.40%, Cr 0.30%~0.50%, Ce 0.002%~0.015%, Alt 0.020%~0.050%, Ti 0.02%~0.08%, N≤0.006%, with the balance being Fe and unavoidable impurities. This weathering steel uses rare earth oxides added to refining slag, and a high-alkalinity, low-oxidizing refining process to improve rare earth yield. Rare earth inclusions and nozzle turbulence are modified through calcium-magnesium composite treatment, achieving rare earth micro-alloying to replace high-alloy additions. While meeting the mechanical properties and high corrosion resistance of 355MPa grade weathering steel, it significantly reduces alloy costs by more than 15% compared to traditional weathering steel. The process flow is compatible with existing production lines and is suitable for industrial mass production.

The application relates to the field of functional polymer film materials, and discloses a porous film and a preparation method and application thereof. Two surfaces of the porous film are a hydrophilic film surface and a hydrophobic film surface; wherein the pore diameter of the porous film is 0.05-20 mu m, the average pore diameter is 2-15 mu m, the porosity is 35-80 vol.%, and the porous film is distributed with micro-protrusion structures. The porous film can effectively reduce water evaporation, the surface energy of the hydrophobic layer is relatively high, is suitable for water or mist collection, has good stability, is easy to recycle, and can avoid water body pollution caused by residual solvents on the film surface.

The application discloses a preparation method of a self-supporting GaN substrate based on graphene and relates to the technical field of semiconductor devices. The preparation method comprises the following steps: performing pattern processing on a graphene layer on a substrate layer to prepare a graphene mask region with a plurality of window regions arranged at intervals; depositing a GaN thin film in the graphene mask region by using a metal organic chemical vapor deposition process until the GaN thin film of the window region forms a gap with the substrate layer; depositing a GaN film layer on the GaN thin film by using a hydride vapor phase epitaxy process, and obtaining a self-supporting GaN substrate after a stripping treatment; wherein the temperature of a nucleation growth stage is 550 DEG C-600 DEG C, and the temperature of an annealing crystallization stage is 1050 DEG C-1100 DEG C. The application realizes the significant reduction of the interface bonding strength between a GaN epitaxial layer and a substrate while ensuring the high-quality growth of the GaN epitaxial layer, so that the lossless stripping can be realized and a high-quality self-supporting GaN substrate can be obtained.