47 results about "Memory effect" patented technology

The invention discloses a scanning point imaging encryption transmission method based on a GaN heterojunction device, and belongs to the technical field of semiconductor photoelectronics. According to the method, the same device is switched between a high-speed'detection mode 'and a'synaptic mode' with a memory effect, encryption is realized by utilizing response difference of the device in two working modes, and an encryption key of the device is an analog and time-varying bias protocol instead of a simple digital sequence. The characteristics of the physical unclonable function endow the physical unclonable function with extremely high encryption strength, so that the physical unclonable function is difficult to crack by a conventional algorithm and has higher security.

The invention relates to the field of force-electromagnetic coupling measurement, and discloses a low-voltage electric energy metering box internal arrangement method and system based on a modular mutual inductor plugging structure, and the method comprises the steps: synchronously collecting three-phase module magnetic flux density, base strain field and pre-tightening force time sequence data through deploying a multi-source sensor; a directed weighted hypergraph is constructed to represent a magnetoelastic coupling topology, the topology is converted into a time-varying creep rate matrix through a viscoelastic creep memory operator, a compensation strategy is generated in combination with phase space division and a magnetostriction response tree, and finally an optimization scheme of module spacing and interface rigidity is reversely mapped. By accurately capturing the time-varying mechanical law of the strain field and the pre-tightening force, the problem of time-varying coupling drift of the modular mutual inductor caused by structure-electromagnetic coupling and viscoelastic memory effect is solved, the limitation of traditional static independent calibration is broken through, and long-term stability of three-phase metering precision is achieved.

The utility model discloses a slurry storage tank with low energy consumption, which relates to the technical field of chemical engineering, and comprises a slurry storage tank body, a base, a storage battery, an electric heating wire and a servo motor, the storage battery is arranged on one side of the slurry storage tank body, in the slurry storage tank, a shape memory alloy spring is made of nickel-titanium alloy, and the transformation temperature of the shape memory alloy spring is about or below 60 DEG C; when the temperature exceeds 60 DEG C, the shape memory effect is triggered to extend, so that the third copper sheet is separated from the two first copper sheets, the current is blocked, the servo motor and the electric heating wire stop working, that is, stirring and heating of the calcium carbonate solution in the slurry storage tank body are stopped, when the temperature is reduced to a certain degree, heating is conducted again, and the temperature of the slurry storage tank body is kept between 40 DEG C and 60 DEG C; the mode has real-time performance of heating the calcium carbonate solution in the slurry storage tank body, precipitation can be prevented, and excessive energy consumption caused by the fact that stirring and heating are not stopped in time due to too high temperature is avoided.

This invention relates to the field of force-electromagnetic coupling measurement, and discloses a method and system for the internal arrangement of a low-voltage power metering box based on a modular transformer plug-in structure. This method deploys multi-source sensors to synchronously collect time-series data on the magnetic flux density of the three-phase modules, the strain field of the base, and the preload. A directed weighted hypergraph is constructed to represent the magnetoelastic coupling topology, which is then converted into a time-varying creep rate matrix using a viscoelastic creep memory operator. Combined with phase space partitioning and a magnetostrictive response tree generation compensation strategy, the final result is an inverse mapping to an optimized scheme for module spacing and interface stiffness. This invention solves the problem of time-varying coupling drift caused by structure-electromagnetic coupling and viscoelastic memory effects in modular transformers by accurately capturing the time-varying mechanical laws of the strain field and preload, overcoming the limitations of traditional static independent calibration, and achieving long-term stability of three-phase metering accuracy.

It is an object to provide a semiconductor having a novel structure. In the semiconductor device, a plurality of memory elements are connected in series and each of the plurality of memory elements includes first to third transistors thus forming a memory circuit. A source or a drain of a first transistor which includes an oxide semiconductor layer is in electrical contact with a gate of one of a second and a third transistor. The extremely low off current of a first transistor containing the oxide semiconductor layer allows storing, for long periods of time, electrical charges in the gate electrode of one of the second and the third transistor, whereby a substantially permanent memory effect can be obtained. The second and the third transistors which do not contain an oxide semiconductor layer allow high-speed operations when using the memory circuit.

Image sensors with improved memory effect are disclosed herein. In one embodiment, a method for reducing image lag associated with a pixel included in a plurality of pixels is described. The pixel includes a photodiode, a first floating diffusion coupled to the photodiode through a transfer transistor, a second floating diffusion coupled to the first floating diffusion through a dual floating diffusion transistor, and a lateral overflow integration capacitor coupled between the second floating diffusion and a bias voltage source. The lateral overflow integration capacitor is further coupled to a pixel reference voltage source through a reset transistor. Operation of the pixel comprises an idle period and an integration period after the idle period. The method also includes configuring the lateral overflow integration capacitor to be either zero-biased or forward-biased during the idle period.

The invention provides a metal glass re-toughening method, and relates to the technical field of amorphous alloy mechanical property improvement, and the metal glass re-toughening method comprises the following steps: carrying out current treatment on relaxation-state metal glass, heating the relaxation-state metal glass to a first set temperature, and then carrying out quenching treatment; wherein the first set temperature is lower than the glass transition temperature Tg of the metal glass. It needs to be explained that the relaxation state (aging state) metal glass is subjected to energizing treatment, so that the relaxation state (aging state) metal glass is rapidly heated to a higher temperature, at the moment, the memory effect can be activated, the free volume content in the metal glass is increased to a certain extent, and the energy state of the metal glass is improved; subsequently, rapid cooling by quenching is performed such that the increased free volume is retained, achieving rejuvenation of the metallic glass after aging.

The utility model relates to a sealing assembly for sealing a liquid injection hole of a battery cell. The sealing assembly comprises a sealing piece and a memory metal piece, the sealing element is matched with the battery cell liquid injection hole to realize sealing; the memory metal part has a heating state and a cooling state in the application process; when the memory metal piece is in a heating state, one end of the memory metal piece can penetrate through the sealing piece and extend to the outside of the liquid injection hole, and the other end of the memory metal piece is used for clamping and limiting the sealing piece; and when the memory metal piece is in a cooling state, one end, extending to the outside of the liquid injection hole, of the memory metal piece is deformed so as to be attached to the inner surface of the battery cell cover plate. By utilizing the shape memory effect of the memory metal part and the shape change in two different states of heating and cooling, the liquid injection hole can be detachably sealed by the sealing assembly.

An amplification system can be operated by providing an input signal to an amplifying transistor, amplifying the input signal with the amplifying transistor to generate an amplified signal, and monitoring one or more of a supply current for the amplifying transistor, an injection voltage point of the amplifying transistor, forward power at an output of the amplifying transistor, and temperature of the amplifying transistor. Operation of the amplification system can further include generating a control signal based on monitored information for correcting either or both of a memory effect of the amplifying transistor and a current collapse effect of the amplifying transistor.

The invention discloses a FeMnSi series alloy with a remarkable room-temperature shape memory effect for 3D printing. The FeMnSi series alloy is prepared from the following elements in percentage by mass: 16% of Mn, 7.5%-8.2% of Cr, 3.5%-4.2% of Ni, 5.5%-5.7% of Si and the balance of Fe. The invention further discloses a preparation method of the FeMnSi series alloy. According to the FeMnSi alloy, the proportion with the characteristics of low Cr, low Ni and medium Si is designed, the martensite phase transformation point temperature is effectively increased, meanwhile, the internal stacking fault and dislocation defect density of the FeMnSi alloy is increased through 3D printing, phase transformation from an fcc phase to an hcp phase in the room-temperature deformation process and inverse phase transformation after heating are promoted, the remarkable shape memory effect and tensile strength are achieved at the room temperature, and the high-strength and high-toughness FeMnSi alloy is obtained. The method is suitable for preparing impact-resistant, load-bearing and functional devices which can be repeatedly used in a room-temperature environment.

The invention discloses a QPSO (Quadrature Particle Swarm Optimization) algorithm-based method for determining a two-way memory alloy component ratio, which belongs to the field of memory alloy ratios and is used for determining the memory alloy component ratio and accurately regulating and controlling the temperature sensitivity and elongation error of a material so as to enable a spring to keep stable deformation performance in repeated thermal cycles and prolong the service life of a device. The method mainly comprises the following steps: determining a multi-target fitness function according to a two-way shape memory effect alloy element; the optimized parameter is the proportion of each element, a four-dimensional solution space is formed, a random particle population is generated, the number of particles is N, and the maximum number of iterations is stipulated as S; evaluating a fitness value of each particle based on a fitness function; updating particle positions; and calculating the fitness value of each particle at the new position, and updating the individual optimal position Pb of the particle and the global optimal position Gb of the particle swarm. The method is mainly used for matching the components of the two-way memory alloy.

The present invention provides an EMES battery based on electromagnetic energy storage (EMES) technology, also known as a quantum battery, for storing electrical energy in a statically stable electromagnetic coupling device. A single unit of electromagnetic energy storage is called an EMES device, and a network of EMES devices can also be referred to as an EMES battery or an EMES system. This is a new method of simultaneously storing energy in the electric and magnetic fields of the same device during charge and discharge cycles. The EMES battery includes at least one electromagnetic energy storage EMES device, which includes: two upper and lower electromagnetic layers and a magnetic capacitor Mcap unit disposed in the middle for storing electrical energy. The two upper and lower electromagnetic layers are used to form a magnetic field during charging and form electromagnetic coupling with the Mcap in the middle, and can store energy in both the electric and magnetic fields of the EMES device simultaneously. The EMES quantum battery has the characteristics of high-density energy storage, long life, no heat generation, no memory effect, fast charge and discharge, etc.

Current steering digital-to-analog converters (DACs) are described. These DACs are suitable for high speed operation. Weight transistors conventionally used in DACs are replaced with resistors, resulting in a lower RC constant. Further, the resistors cause a smaller voltage drop, thus improving the voltage headroom of the DAC. Additionally, the current steering switches are biased in the triode region, as opposed to the saturation region as in conventional designs. Biasing the switches in the triode region results in a smaller drain-source voltage, which further improves the voltage headroom of the DAC. The triode operation further results in a substantially smaller output impedance, which leads to the output voltage being dictated primarily by the output transistor of the current path. Lastly, reset switches are added which reduce data-dependent memory effects that can otherwise produce distortion.

The invention relates to the technical field of semiconductors, and provides a preparation method of a silicon carbide epitaxial wafer, which comprises the following steps: S1, placing a silicon carbide substrate in a reaction chamber, and depositing a first doping layer on at least one side of the substrate; s2, at the temperature of 1610 DEG C to 1660 DEG C and the pressure of 300 mbar to 1000 mbar, carrying out purging etching on the graphite piece in the reaction cavity by adopting hydrogen or chlorine-containing gas; s3, depositing a second doping layer on one side, deviating from the silicon carbide substrate, of the first doping layer; one of the first doped layer and the second doped layer is a P-type epitaxial layer, and the other one is an N-type epitaxial layer. According to the method, the N-type epitaxial layer and the P-type epitaxial layer can be alternately grown in the same chamber, the memory effect of nitrogen atoms or aluminum atoms is weakened, and the problem that interface doping of the N-type epitaxial layer and the P-type epitaxial layer is fuzzy is solved.

The invention relates to the technical field of piezoelectric actuators, and particularly discloses a large-strain memory piezoelectric stack actuator and a working method.The large-strain memory piezoelectric stack actuator is characterized in that piezoelectric ceramic pieces and electrode pieces are alternately stacked to form a piezoelectric stack, the piezoelectric stack is arranged on the outer wall of a sleeve and positioned by the sleeve, zirconium oxide pieces are placed at the two ends of the piezoelectric stack, and a pre-tightening device is arranged in the sleeve; the whole body is fixed with the cover plate through a pre-tightening device, and pre-tightening force is applied through a pre-tightening screw; pins on the same side of the electrode plates are connected in series to lead out wires for external electrical connection. The actuator is based on a piezoelectric ceramic material with a strain memory effect, adopts a central radial electrode plate with low radial rigidity, and applies a pre-tightening force to a piezoelectric stack through an internal pre-tightening device to form an integral structure, so that the radial constraint on the stacked actuator is reduced, and a power-off strain memory function is realized. The actuator has a power-off strain memory function, the memory strain capacity is 4-8 times that of piezoelectric materials such as PZT-5H, and the actuator is suitable for application scenes such as spacecraft mirror surface shape adjustment and high-precision displacement keeping.

The utility model discloses a low -voltage power utilization safety real scene model demonstration system belongs to electric power safety demonstration equipment technical field, including model, simulation unit, alarm device, escape path guiding system, and simulation unit includes photovoltaic board module, charging stake module, electric vehicle module, fault simulation unit, and fault simulation unit includes atomizer, LED lamp, and atomizer can produce smoke, and LED lamp can simulate dynamic flame, and simulation unit can simulate fault disaster, and escape path guiding system includes embedded LED lamp area. Through the utility model, set up simulation unit, and photovoltaic board module, charging stake module, electric vehicle module, fault simulation unit in simulation unit can simulate fault disaster, can transform the abstract concept such as electric energy transmission, fault arc and fire spread into visual, audible and tactile perceptible simulation phenomenon, can intuitively understand the cause of failure, transmission path and consequence, thereby significantly improve the cognitive depth and memory effect.

The invention discloses an electrochromic film laminated glass intelligent control system and a control method thereof, and the control system comprises electrochromic film laminated glass, and also comprises a sensing unit, a control unit and an interaction unit. The sensing unit is used for sensing external environment and personnel conditions; the interaction unit is used for receiving a control signal; the sensing unit is electrically connected with the control unit, the control unit is electrically connected with the electrochromic film laminated glass, and the interaction unit is electrically connected with the control unit. According to the invention, through a multi-sensor fusion decision, balance between comfort and energy saving is automatically found; the electrochromism technology is extremely low in power consumption and has a memory effect, and the refrigeration energy consumption can be effectively reduced by combining solar radiation control; automatic operation and manual wireless remote control are supported, and the user experience is better.

A battery cell may include a first electrode coupled with a first current collector, a second electrode coupled with a second current collector, and a separator interposed between the first electrode and the second electrode. The battery cell may also include a current controller comprising one or more shape memory effect (SME) materials in a deformed conformation. The shape memory effect (SME) material may at least partially restore an original conformation of the shape memory effect (SME) material in response to one or more stimuli. The conductivity of the current controller when the shape memory effect (SME) material is in the original conformation may be lower than when the shape memory effect (SME) material is in the deformed conformation, causing the shape memory effect (SME) material to restore the original conformation to reduce current flow within the battery cell.

The present invention discloses a GaN-based HEMT epitaxial structure and a preparation method thereof. The structure comprises a substrate; a buffer layer is epitaxially grown on the upper surface of the substrate; a channel layer is epitaxially grown on the upper surface of the buffer layer; a barrier layer is epitaxially grown on the upper surface of the channel layer; and an intentionally doped p-type gallium nitride layer is epitaxially grown on the upper surface of the barrier layer. The intentionally doped p-type gallium nitride layer has a periodic structure and is cyclically grown from bottom to top by an intentionally doped magnesiumocene GaN layer, a magnesiumocene layer, and an undoped GaN layer. By utilizing the diffusion effect and memory effect of magnesium atoms, uniform distribution of magnesium atoms in the intentionally doped p-type gallium nitride layer is achieved, clustering of magnesium atoms in the structure is reduced, and the hole concentration of the p-type layer can be effectively increased without deteriorating the appearance of the GaN wafer and the crystal quality of the p-type layer, and without affecting the ohmic contact in the subsequent device manufacturing process.

The utility model relates to the related technical field of electric beds, which comprises an electric bed, the upper end of the electric bed is provided with a spring for buffering and damping, the outer ring of the spring is sleeved with a wrapping layer for enhancing the supporting performance and the springback speed, and the upper end of the electric bed is provided with a supporting strip for supporting. Elastic frameworks used for dispersing pressure are fixedly installed at the two ends of each supporting strip in a penetrating mode, the nickel-titanium memory alloy springs absorb dynamic loads through elastic deformation of the nickel-titanium memory alloy springs, the shape memory effect of the nickel-titanium memory alloy springs can automatically rebound and reset after being loaded and compressed, and longitudinal permanent deformation is restrained; the high-support memory foam wrapping layer which is spirally and tightly wrapped outside synchronously limits radial expansion of the spring through physical constraint, uniformly disperses pressure and improves the rebound speed, is tightly attached to the outer surface of the high-strength engineering plastic supporting strip, and is matched with the three-dimensional hexagonal honeycomb elastic framework to form rigid support; the pressure is uniformly dispersed through the hollow truss reinforcing ribs and the honeycomb structure.

This invention discloses a modified photoresponse material for memory and a modular dual-reaction system. The modified photoresponse material for memory is (BiVO4). y / Ag z / Fe x In 2‑x S3, where x is 0.18–1, y is 0.66–1.5, and z is 0.15–0.45, exhibits a memory effect, high charge separation and transfer efficiency, and good photocatalytic activity. This modular dual-reaction integrated treatment system employs multi-layer, multi-stage reaction tanks and utilizes the modified memory photoresponse material described in this invention to treat naphthalene-containing industrial wastewater. The operation process is simple, efficient, and effectively saves costs. Its tail gas absorption device avoids secondary pollution, making it environmentally friendly. Using this modified memory photoresponse material and the matching modular dual-reaction integrated treatment system to treat naphthalene-containing industrial wastewater, the primary COD degradation rate is over 65%.

The present invention discloses an in-situ in vitro intelligent winding self-prestressing reinforcement method for in-service PCCP, which belongs to the field of PCCP repair technology and solves the technical problem of large engineering workload of existing PCCP reinforcement methods. The reinforcement method is as follows: winding memory alloy bars on the outer wall of the part to be reinforced of the PCCP pipeline, the memory alloy bars are close to the PCCP pipeline, and the two ends are anchored to the PCCP pipeline, the memory alloy bars are heated to activate their shape memory effect, and after the temperature of the memory alloy bars is restored, self-prestressing is formed under the action of the recovery stress, thereby achieving reinforcement of the PCCP pipeline. The memory alloy bars are pulled by a drilling robot and wound around the outer wall of the part to be reinforced. A protective tube is provided on the periphery of the memory alloy bars. During the winding process of the memory alloy bars, a quick-setting mortar protective layer is poured into the gap between the memory alloy bars and the protective tube. After the quick-setting mortar protective layer is finally set, the memory alloy bars are heated by electrical excitation. This can solve the problem of large-scale excavation required for existing PCCP reinforcement, and the reinforcement process is simple.

The invention discloses a Fe-Mn-Si series alloy with a remarkable shape memory effect at room temperature and low temperature for 3D printing. The Fe-Mn-Si series alloy is composed of the following elements of, by mass, 16% of Mn, 8.0%-8.5% of Cr, 5.8%-6.2% of Ni, 5.5%-5.7% of Si and the balance Fe. The invention further discloses a preparation method and application of the Fe-Mn-Si alloy. According to the Fe-Mn-Si alloy, the composition proportion of low Cr, high Ni and medium Si is designed, the martensite phase transformation point temperature is controlled between the room temperature and the low temperature, the alloy can have high stacking and dislocation density through 3D printing, phase transformation from an fcc phase to an hcp phase in the room-temperature or low-temperature deformation process and inverse phase transformation after heating are promoted, and therefore the high-strength and high-toughness Fe-Mn-Si alloy is obtained. The material has obvious shape memory effect and tensile strength at room temperature and low temperature, and is suitable for preparing devices in the aerospace field.

The utility model discloses a charging control circuit and a charger. The charging control circuit uses InnoSwitch 4-Pro gallium nitride as a primary switch to carry out 65W fast charging design, the steady-state switching frequency of the charging control circuit can reach 140kHz, the size of a planar transformer is greatly reduced, the size and the weight of the whole charger product are reduced, the power density can reach 0.7 W / cm < 3 >, the battery of the charger baby of the applicable two-in-one charger product is a polymer lithium battery, and the battery sampling is convenient. The polymer battery has the advantages of high electric energy density, small volume, no memory effect or self-discharge phenomenon, and long service life.

The invention discloses an electrolytic bath hot spot temperature online estimation method and system based on fractional calculus, and belongs to the technical field of energy equipment state monitoring. The invention aims to solve the technical problem that a temperature estimation model in the prior art is large in calculation amount or insufficient in precision. According to the technical scheme, the method is characterized by comprising the steps that a multi-input single-output observer model is established, and the model takes the total input power and the outer surface temperature of the electrolytic cell as input and takes an estimated value of the internal hot spot temperature as output; decoupling the model into a heat production fast dynamic channel and a heat transfer slow dynamic channel; and mathematical description is carried out on the one or two channels by adopting a fractional order transfer function so as to accurately describe the memory effect of the heat transfer process. The method further comprises the steps that model parameters are determined through system identification, and temperature estimation is conducted on line through the model. The method gives consideration to calculation efficiency and estimation precision, and can be used for guaranteeing safe and efficient operation of the electrolytic cell.

In one example, an apparatus includes: an operational amplifier (opamp) to amplify a difference between a reference voltage and a feedback voltage and output a bias signal based on the difference; a replica device coupled to the opamp, the replica device having a gate terminal to receive the bias signal; and an output stage coupled to the replica device and to output a regulated voltage, the output stage having a pass device and a plurality of feedback devices coupled to the pass device. A selected number of the plurality of feedback devices can be enabled based at least in part on an output power level of a power amplifier that is to receive the regulated voltage.

The invention relates to the technical field of new energy vehicles, and particularly discloses a new energy vehicle SOC estimation system and method based on a fractional order neural network, and the method depends on the fractional order calculus characteristics of the fractional order neural network, a fractional order operator has a memory effect, and can accurately capture the historical change correlation of voltage, temperature and voltage drop in the charging and discharging process of a battery. According to the method, the fitting precision of the dynamic attenuation process of the battery after long-term circulation can be improved, error accumulation caused by neglecting a historical state is avoided, meanwhile, the lagging response characteristic of the battery can be quickly responded, and the adaptability to time-varying nonlinearity is higher through dynamic adaptation of fractional order numbers; after the fractional order neural network is iterated by the sparrow search optimization algorithm, the weight, the threshold and the order parameter can be accurately matched with the battery characteristics, a dynamic voltage drop characteristic weight adjustment mechanism is matched, the average absolute percentage error of SOC prediction is reduced, prediction precision reduction caused by battery aging is avoided, and the SOC estimation precision is improved.

Provided are a silicon-carbon composite material and a preparation method therefor, a secondary battery, and an electric device. The silicon-carbon composite material includes a core and a coating coated on the surface of the core, the core includes a carbon matrix and a silicon-based material located on the surface of the carbon matrix; the silicon-based material includes a silicon cluster and a silicon carbide cluster, the silicon carbide cluster forms a network structure, and the silicon cluster is located in a gap of the network structure. The silicon-carbon composite material can eliminate the memory effect of silicon and improve the capacity retention rate.

The invention discloses a manufacturing method of electrochromic glass capable of prolonging a memory effect. The manufacturing method comprises the following steps: 1, cleaning a glass substrate; 2, depositing a layer of ITO (Indium Tin Oxide) film on the substrate as a bottom layer ITO film, wherein the thickness of the bottom layer ITO film is 80-120nm; 3, the electrochromic layer is made of tungsten trioxide as a base material, molybdenum and titanium elements are doped into WO3, the doping concentration is that the atomic percent of Mo is 1-5%, the atomic percent of Ti is 0.5-3%, and the thickness of the electrochromic layer is 300-600 nm; 4, annealing treatment is conducted in the inert atmosphere, the annealing temperature ranges from 300 DEG C to 450 DEG C, and the annealing time ranges from 1 h to 3 h; 5, generating an electrolyte layer on the electrochromic layer, wherein the electrolyte layer adopts lithium tantalate as a solid electrolyte layer; 6, the ion storage layer is deposited and attached to the electrolyte layer by taking nickel oxide as a base material, and the vanadium element is doped into NiO to realize doping modification; 7, depositing a layer of ITO film on the ion storage layer as a top layer ITO film, wherein the thickness of the top layer ITO film is 80-240 nm; and 8, packaging the device in a dry environment to obtain a finished product.

The invention discloses a solid electrolyte membrane with shape memory and self-healing functions and a preparation method thereof. According to the solid electrolyte membrane, an NCO-PEG-NCO precursor generated by reaction of polyethylene glycol and hexamethylene diisocyanate reacts with tetrafluorophenyl carbamate, and polyurethane is prepared to serve as a base material. And then adding a lithium salt into the matrix material to improve the ionic conductivity and form the slurry suitable for ink direct writing printing. The slurry is accurately deposited on a base material through an ink direct-writing printing technology, and the solid electrolyte membrane with the required shape and thickness is prepared. The solid electrolyte membrane has excellent shape memory effect and self-healing capability, can recover to a preset shape under external stimulation, and repairs the structure and function through a self-healing mechanism after being damaged. The novel solid electrolyte membrane has a wide application prospect in a high-performance lithium battery and other electrochemical energy storage devices, and can remarkably improve the safety and prolong the service life of the battery.