The application belongs to the technical field of third-generation
semiconductor material defect control. A method for eliminating small-scale stacking faults of
silicon carbide based on high-temperature oxidation is proposed. The
silicon carbide substrate is scanned and characterized by
photoluminescence, and the target small-scale
stacking fault is accurately identified and positioned. Then, the substrate is cleaned to remove surface impurities, and high-temperature oxidation treatment is carried out in a dry
oxygen atmosphere, and an oxidation layer is controlled to grow. The mismatch of the
thermal expansion coefficient between the oxidation layer and the substrate and the reaction
molar volume expansion are used to construct a composite interface
stress field at the interface, drive the directional reconstruction of the atomic arrangement of the target
stacking fault, and convert it into the
standard sequence of the matrix. Finally,
nitric oxide assisted annealing is carried out, and the
nitrogen passivation effect is used to solidify the lattice configuration after reconstruction. The application has the advantages of simple process, strong compatibility, efficient and stable
elimination of small-scale stacking faults, and significantly improved
crystal quality of
silicon carbide substrate, which provides a guarantee for the preparation of high-reliability power devices.