59results about How to "Reduce nucleation" patented technology

The invention provides a cement-based composite material used for a 3D printing technology as well as a preparation method and application thereof. The cement-based composite material is prepared from the following raw materials based on the total weight of the composite material: 33%-40% of cement, 0%-8% of inorganic powder, 32%-38% of tailing machine-made sand, 2.5%-3% of a high-molecular polymer, 0.1%-0.5% of a water reducing agent and 16.7%-20% of mixing water; a composite thickening time control agent, a thixotropic agent, a volume stabilizer and the like are added into a mixture to prepare an inorganic composite material; and then the inorganic composite material can be directly pumped into a 3D printer for building to be applied to construction. The cement-based composite material is an inorganic material and the materials are easily available; a lot of industrial waste materials can be used; therefore, the cement-based composite material is low in cost, energy-saving and environment-friendly; the condensation time can be flexibly controlled, and the material has super early strength, good caking property and strong stability; the requirements of 3D printing construction continuity of the building and the building strength are met so that the house building has good global stability and use safety; and the application and popularization of 3D printing technology can be greatly promoted.

Provided is a method for manufacturing a grain-oriented electrical steel sheet, the method comprising: heating a grain-oriented electrical steel sheet slab; hot-rolling the heated slab; optionally annealing the hot-rolled steel sheet; subjecting the resulting steel sheet to one cold rolling or two or more cold rollings with intermediate annealing therebetween; subjecting the cold-rolled steel sheet to primary recrystallization annealing; and subjecting the annealed steel sheet to secondary recrystallization annealing, wherein the primary recrystallization annealing sequentially comprises an ultra-rapid heating process of heating the steel sheet at an average heating rate of 300° C./sec or higher, a rapid heating process of heating the steel sheet at a lower average heating rate than the average heating rate of the ultra-rapid heating process, but not lower than 100° C./sec, and a general heating process of heating the steel sheet at a lower average heating rate than the average heating rate of the rapid heating process.

We disclose a process for the removal of phosphorous and ammonia from an aqueous stream by contacting the aqueous stream with magnesium and base in a first zone having a first pH, to form an (n−1)th mixed stream and a first portion of struvite; separating the (n−1)th mixed stream from the first portion of struvite; removing at least some struvite from the first portion of struvite; contacting the (n−1)th mixed stream with base in an nth zone, wherein n is an integer incrementing from 2 to n_max, wherein n_max is an integer from 2 to about 5, and wherein the nth zone has an nth pH higher than the (n−1)th pH, to form an nth mixed stream and an nth portion of struvite, except no base is added and the nth pH need not be higher than the (n−1)th pH when n=n_max; separating the nth mixed stream from the nth portion of struvite; returning the nth portion of struvite to the (n−1)th zone; and, if n<n_max, incrementing n and repeating the second contacting, second separating, and returning steps, or, if n=n_max, releasing the nth mixed stream to a treated water tank. We also disclose a system which can be used for performing the method.

A semiconductor device structure comprising:

• • a layer of III-V compound semiconductor material;
  • a layer of polycrystalline CVD diamond material; and
  • an interface region between the layer of III-V compound semiconductor material and the layer of polycrystalline CVD diamond material, the interface region including a diamond nucleation layer of polycrystalline CVD diamond which is formed during an initial nucleation phase of polycrystalline CVD diamond growth over a substrate comprising the layer of III-V compound semiconductor material,
  • wherein the diamond nucleation layer is such that a Raman signal generated by a laser focused on a region comprising the diamond nucleation layer exhibits an sp3 carbon peak at 1332 cm⁻¹ having a full width half-maximum of no more than 5.0 cm⁻¹,
  • wherein the diamond nucleation layer is such that said Raman signal further exhibits one or both of the following characteristics:
    • (i) an sp2 carbon peak at 1550 cm⁻¹ having a height which is no more than 20% of a height of the sp3 carbon peak at 1332 cm⁻¹ after background subtraction when using a Raman excitation source at 633 nm; and
    • (ii) the sp3 carbon peak at 1332 cm⁻¹ is no less than 10% of local background intensity in a Raman spectrum using a Raman excitation source at 785 nm, and
  • wherein an average nucleation density at a nucleation surface of the diamond nucleation layer is no less than 1×10⁸ cm⁻² and no more than 1×10¹² cm⁻².

The invention provides a high-efficient non-corrosive hydrate inhibitor, relating to the technical field of oil-gas hydrate. The hydrate inhibitor is a mixture of an anti-agglomerant and a urea or a calcium nitrate and is used at the pressure of 1.5 to 25 MPa and at the temperature of minus 20 DEG C to 25 DEG C. The hydrate inhibitor overcomes the defects of the prior art, reduces the nucleary, the growth and the coalescence speed of hydrate after being filled in petroleum fluid in production or conveying by mixing at low concentration and has the characteristics of wide application, low cost and no corrosion to pipelines.

The invention discloses a spherical lanthanum oxide. The average particle size of spherical lanthanum oxide is 150 nm-1.2 mum, the specific surface area after roasting at 1000 DEG C is 1-7 m<2>/g, and the specific surface area after roasting at 500 DEG C is 120-144 m<2>/g. The invention also discloses a preparation method of the spherical lanthanum oxide, and the method includes the following steps: (1) mixing lanthanum salt, hydrous ethylene glycol, polyvinylpyrrolidone, and short-chain organic acid, stirring the mixture, dissolving the mixture, and performing a hydrothermal reaction; and (2) subjecting the mixture to the reaction for 1-8 hours at 160-240 DEG C, cooling the mixture to obtain the precipitate, and drying the precipitate to obtain the spherical lanthanum oxide. The lanthanum oxide prepared by the invention is spherical, has uniform morphology, good degree of crystallization, good dispersibility, high heat stability, and big specific surface area, and is suitable for the application on the motor vehicle exhaust.

An epitaxial wafer comprises a silicon substrate wafer having first and second sides, and a silicon epitaxial layer deposited on the first side, and optionally one or more additional epitaxial layers on top of the silicon epitaxial layer, at least one of the silicon epitaxial layer or at least one of the one or more additional epitaxial layers being doped with nitrogen at a concentration of 1×10¹⁶ atoms/cm³ or more and 1×10²⁰ atoms/cm³ or less. The epitaxial wafer is produced by depositing the silicon epitaxial layer and/or at least one of the one or more additional epitaxial layers, at a deposition temperature of 940° C. or less through chemical vapor deposition in the presence of a deposition gas atmosphere containing one or more silicon precursor compounds and one or more nitrogen precursor compounds.

The invention discloses hydrate inhibitor applicable to a high moisture content system, and relates to the technical field of oil gas hydrate. The hydrate inhibitor is a mixture of an anticaking agent, a soluble alcohol and salt. The hydrate formed inhibitor has a using pressure of between 1.5 and 30MPa, and a temperature of between -25 and 35 DEG C. The inhibitor can overcome the defects in the prior art, can reduce the speed of nucleation, growth and coalescence of the hydrate by being injected into produced or conveyed petroleum fluid after being mixed at low concentration, has wide applicability, is particularly applicable to the high moisture content system, and has low cost.

A liquid crystal device comprises a nematic liquid crystal, voltage means for applying a voltage across said liquid crystal, and two substrates (42, 30) each provided with an alignment layer (32, 33), wherein: said liquid crystal is sandwiched between said two substrates (42, 30); said nematic liquid crystal can be placed in at least one operating state and at least one non-operating state, and at least one of said alignment layers (32, 33) is provided with a plurality of surface protrusions (40) formed from an anisotropic material.

The invention discloses a compound hydrate inhibitor. The compound hydrate inhibitor is formed by mixing a copolymer, an emulgator and a dispersing agent. The copolymer is a mixture of one or more of polyvinylpyrrolidone, polyethylene caprolactam, polymethylacrylic acid and dimethylaminoethyl methacrylate. The emulgator is a polyhydric alcohol type non-ionic surface active agent. The dispersing agent is a quaternary ammonium salt compound. The copolymer with the dynamics inhibition performance is combined with the emulgator and the dispersing agent. Nucleation and growth of hydrate particles can be inhibited, and the purpose of dispersing the hydrate particles can also be achieved. The inhibitor can effectively inhibit the nucleation and the growth rate of a hydrate and can also achieve the purpose of preventing agglutination of the hydrate particles, and thus the flowing safety of an oil-gas-water three-phase delivery pipeline is effectively achieved. The compound hydrate inhibitor also has the advantages of being small in use amount, economical, environmentally friendly, efficient, excellent in performance and the like and has good application prospects.

The invention belongs to the field of solar cells, and particularly discloses a non-halogen lead-doped perovskite thin film and a preparation method and application thereof. The perovskite thin film is prepared by adding lead oxalate into a perovskite precursor solution. According to the preparation method, a trace amount of lead oxalate is added into a perovskite precursor solution, and a perovskite thin film layer in a solar cell is obtained through spin coating by a low-temperature solution treatment method, so that the crystallization process of the perovskite material is slowed down, anda thin film with larger crystal grains and fewer crystal boundaries is obtained. The preparation process is simple, and the production cost is saved. The crystallization condition of the perovskite thin film can be well improved, defects are reduced, carrier recombination is inhibited, and the performance of the device is improved. Meanwhile, an indoor perovskite solar cell obtained by the methodhas a great prospect in the aspect of indoor low-illumination power supply in the future.

More specifically, gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer on a sapphire substrate, to define at least one post in the underlying gallium nitride layer and at least one trench in the underlying gallium nitride layer. The at least one post includes a gallium nitride top and a gallium nitride sidewall. The at least one trench includes a trench floor. The gallium nitride sidewalls are laterally grown into the at least one trench, to thereby form a gallium nitride semiconductor layer. However, prior to performing the laterally growing step, the sapphire substrate and/or the underlying gallium nitride layer is treated to prevent growth of gallium nitride from the trench floor from interfering with the lateral growth of the gallium nitride sidewalls of the at least one post into the at least one trench. Embodiments of gallium nitride semiconductor structures according to the present invention can include a sapphire substrate and an underlying gallium nitride layer on the sapphire substrate. The underlying gallium nitride layer includes therein at least one post and at least one trench. The at least one post each includes a gallium nitride top and a gallium nitride sidewall. The at least one trench includes a sapphire floor. A lateral gallium nitride layer extends laterally from the gallium nitride sidewall of the at least one post into the at least one trench. In a preferred embodiment, the at least one trench extends into the sapphire substrate such that the at least one post each includes a gallium nitride top, a gallium nitride sidewall and a sapphire sidewall and the at least one trench includes a sapphire floor. The sapphire floor preferably is free of a vertical gallium nitride layer thereon and the sapphire sidewall height to sapphire floor width ratio preferably exceeds about 1/4. A mask may be included on the sapphire floor and an aluminum nitride buffer layer also may be included between the sapphire substrate and the underlying gallium nitride layer. A mask also may be included on the gallium nitride top.

The invention relates to an enhanced compound natural gas hydrate inhibitor. The inhibitor comprises alkyl imidazole ionic liquid, an assistant and water, wherein the alkyl imidazole ionic liquid has a structural formula as shown in the specification, alkyl substituent R1 is ethyl or butyl, R3 is methyl, R2, R4 and R5 are H, and X<-> is one of tetrafluoroborate, methyl sulfate and ethyl sulfate. The alkyl imidazole ionic liquid has the characteristic of anion/cation adjustability, and the polarity and hydrophilcity/lipophilicity of the alkyl imidazole ionic liquid can be adjusted, so that the compound inhibitor is suitable for oil-gas-water three-phase or oil-water or gas-water two-phase coexistent system, and can be compounded with the assistant to further improve the hydrate inhibiting performance; and under a condition of high supercooling degree, compared with a common alcohol or sodium chloride thermodynamic inhibitor having a mass concentration of 20-60 percent, the inhibitor has the advantages that the requirement can be met under low-usage (1-10 percent), the inhibition cost can be greatly reduced, and hazard to the environment can be reduced.

The invention discloses a device and a method capable of achieving synchronous mesoscopic observation of formation and decomposition of gas hydrates. The device comprises a gas cylinder, a vacuum pump, a gas storage tank, a low-temperature thermostatic bath, a high-pressure visual reaction kettle, a sealing box, a pressure-stabilizing gas inlet system, a data acquisition instrument, a real-time display system and a pressure-stabilizing exhaust system. The high-pressure visual reaction kettle comprises a plurality of transparent sapphire inner cylinders, an upper flange, a lower flange and a quartz outer cylinder; the sapphire inner cylinder is of a hollow structure and is arranged in the transparent quartz outer cylinder, and the upper flange and the lower flange are used for sealing the inner cylinder and the outer cylinder. The upper and lower flanges are provided with a plurality of interfaces. Each sapphire inner cylinder can be used for the formation and decomposition of gas hydrates simultaneously. A drying agent is placed in the sealing box, and fogging can be avoided through observation in the sealing box. According to the invention, the formation and decomposition of gas hydrates can be researched at high pressure and low temperature; multiple groups of experiments are carried out at the same time, online real-time synchronous mesoscopic observation of morphology and dynamic changes of formation and decomposition of the gas hydrate can be achieved, and analysis is carried out through image processing software, so that the influence of hydrate nucleation and growthrandomness is reduced while the operation efficiency is improved.